• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 춘계학술대회
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• pp.154-159
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• 2005

Low RF power density was used for preparing transparent conducting AI-doped ZnO (AZO) thin films by RF Magnetron Sputtering on Corning 1737 glass. The dependence of films' structural, optical and electrical properties on sputtering gas, film's thickness and substrate temperature were investigated. Low percent of incorporated H2 in Ar sputtering gas has proven to reduce film's resistivity and sheet resistance as low as $4.1\times10^{-3}{\Omega}.cm$. It also formed new preferred peaks orientation of (101) and (100) which indicated that the c-axis of AZO films was parallel to the substrate. From UN-VIS-NIR Spectrophotometer analysis, it further showed high optical transmittance at about $\~ 90\%$ at visible light spectra (400-700nm).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1096_1097
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• 2009

Aluminium doped zinc oxide(ZnO:Al) thin film, which is mainly used as a transparent conducting electrode in electronic devices, has many advantages compared with conventional indium tin oxide(ITO). In this paper in order to investigate the possible application of ZnO:Al thin films as a transparent conducting electrode for flexible film-typed dye sensitized solar cell (FT-DSCs), ZnO:Al and ITO thin films were prepared on the polyethylene terephthalate (PET) substrate by r. f. magnetron sputtering method. Specially one-inched FT-DSCs using either a ZnO:Al or ITO electrode were also fabricated separately under the same manufacturing conditions. Some properties of both the FT-DSCs with ZnO:Al and ITO transparent electrodes, such as conversion efficiency, fill factor, and photocurrent were measured and compared with each other. The results showed that by doping the ZnO target with 2 wt% of $Al_2O_3$, the film deposited at discharge power of 200W resulted in the minimum resistivity of $2.2\times10^{-3}\Omega/cm$ and at ransmittance of 91.7%, which are comparable with those of commercially available ITO. Two types of FT-DSCs showed nearly the same tendency of I-V characteristics and the same value of conversion efficiencies. Efficiency of FT-DSCs using ZnO:Al electrode was around 2.6% and that of fabricated FT-DSCs using ITO was 2.5%. This means that ZnO:Al thin film can be used in FT-DSCs as a transparent conducting layer.

• 한국전기전자재료학회논문지
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• 제22권2호
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• pp.137-141
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• 2009

AZO transparent conductive thin films were grown on $SiO_2$/Si and glass substrates using diethylzinc (DEZ) and trimethylaluminium (TMA) as the precursor and $H_2O$ as oxidant by atomic layer deposition. The structural, electrical, and optical properties of the AZO films were characterized as a function of film thickness at a deposition temperature of $150^{\circ}C$. The AZO films with various thicknesses show well-crystallized phases and smooth surface morphologies. The 190-nm-thick AZO films grown on Coming 1737 glass substrates exhibit rms(root mean square) roughness of 8.8 nm, electrical resistivity of $1.5{\times}10^{-3}\;{\Omega}-cm$, and an optical transmittance of 84% at 600nm wavelength. Atomic layer deposition technique for the transparent conductive oxide films is possible to apply for the deposition on flexible polymer substrates.

• 한국재료학회지
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• 제19권11호
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• pp.631-636
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• 2009

We investigated the NO gas sensing characteristics of ZnO-carbon nanotube (ZnO-CNT) layered composites fabricated by coaxial coating of single-walled CNTs with a thin layer of 1 wt% Al-doped ZnO using rf magnetron sputtering deposition. Morphological studies clearly revealed that the ZnO appeared to form beadshaped crystalline nanoparticles with an average diameter as small as 30 nm, attaching to the surface of the nanotubes. It was found that the NO gas sensing properties of the ZnO-CNT layered composites were dramatically improved over Al-doped ZnO thin films. It is reasoned from these observations that an increase in the surface-to-volume ratio associated with the numerous ZnO “nanobeads” on the surface of the CNTs results in the enhancement of the NO gas sensing properties. The ZnO-CNT layered composite sensors exhibited a maximum sensitivity of 13.7 to 2 ppm NO gas at a temperature of 200${^{\circ}C}$ and a low NO gas detection limit of 0.2 ppm in dry air.

• 대한금속재료학회지
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• 제46권4호
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• pp.249-256
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• 2008

0.5 wt% Al doped ZnO thin films (AZO) were prepared on glass substrates using RF magnetron sputtering method. Thin films were grown at substrate temperature of $250^{\circ}C$, RF power of 75W, working pressure of 10 mTorr, by changing the $O_2/Ar$ pressure ratio from 0% to 16.7%. The effects of oxygen partial pressure during the deposition process on structural and optical properties of the films were investigated using XRD, SEM, AFM, EPMA and UV-visible spectroscopy. All the AZO thin films were grown as hexagonal wurtzite phase with the c-axis preferred out-of-plane orientation. The surface roughness and grain size of AZO films decreased with increasing oxygen ratio from 10.6 nm to 3.2 nm and 94.9 nm to 30.9 nm, respectively. On the other hand, the transmittance and band gap energy of the AZO films increased from 84.7% to 92.6% and 3.24 eV to 3.28 eV, respectively with increasing the $O_2/Ar$ pressure ratio.

• Bulletin of the Korean Chemical Society
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• 제33권4호
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• pp.1235-1241
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• 2012

Aluminium (Al)-doped zinc oxide (AZO) thin films with different Al concentrations were prepared by the solgel spin-coating method. Optical parameters such as the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity were studied in order to investigate the effects of the Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at infinite wavelength of the AZO thin films were found to be affected by Al incorporation. The optical conductivity of the AZO thin films also increases with increasing photon energy.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 하계학술연구발표회 논문개요집
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• pp.74-75
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• 2005

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.426.1-426.1
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• 2014

For high performance thin film solar cells, texturing surface, enhancing the optical absorptionpath, is pretty important. Textured ZnO:Al transparent oxide layer of high haze is commonly used in Si thin film solar cells. In this paper, novel deposition method for aluminum doped zinc oxide (ZnO:Al) on glass substrates is presented to improve the haze property. The broccoli structure of ZnO:Al layer was formed on chemically etched glass substrates, which showed high haze value on a wide wavelength range.The etching condition of the glass substrates can change not only the haze values of the ZnO:Al of in-situ growth but alsothe electrical and optical properties of the deposited ZnO:Al films.The etching mechanism of the glass substrate affecting on the surface morphology of the glass will be discussed, which resulted in variation of texture of ZnO:Al layer. The optical properties of substrate morphology were also analyzed with EDS and FTIR results. As a result, the high haze value of 85.4% was obtained in the wavelength range of 300 nm to 1100 nm. Furthermore, low sheet resistance of about 5~18 ohm/sq was achieved for different surface morphologies of the ZnO:Al films.

• 한국재료학회지
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• 제5권3호
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• pp.280-287
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• 1995

첨가제로 $Al_{2}$$O_{3}$가 포함된 ZnO 소결체가 타깃을 이용하여 RF 마그네트론 스퍼터링법으로 Al이 첨가된 ZnO박막을 증착하고, 타깃에 첨가된 $Al_{2}$$O_{3}$의 농도와 증착시 스퍼터링장치내의 기판위치에 따른 박막의 물성 변화를 고찰하였다. 타깃의 $Al_{2}$$O_{3}$ 첨가농도가 2wt%인 경우에 비저항치 8 $\times$ $10_{-3}$ $\Omega$-cm인 박막이 증차되었다. 또한 $Al_{2}$$O_{3}$가 2wt%이상 첨가된 경우는 모든 Al이 박막내부에서 Zn를 치환하여 전자주게로의 역할을 하지 못하고, 오히려 치환되지 못한 Al원자의 중성 불순물 산란효과에 의해 박막의 비저항이 증가하였다. 타깃의 마모영역 위에서 증착된 Al을 첨가한 ZnO 박막은 그 영역 KR에서 증착된 박막보다 높은 비저항값을 나타냈으며, 이는 큰 에너지를 가지는 산소입자의 충돌에 기인한 것으로 여겨진다.