• Journal of the Korean Ceramic Society
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• v.22 no.4
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• pp.54-60
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• 1985

Gas sensing materials for detecting flammable gases such as $CH_4$, $C_3H_8$ and n-$C_4H_{10}$ were developed by util-izing $In_2O_3$ as the principal sensing material. The sensing materials were formulated by mixing $In_2O_3$ powder with one or two other chemicals such as $SnO_2$, $Y_2O_3$ and $Al_2O_3$ with a small addition of $PdCl_2$ as a catalyst. Sample of sensor were fabricated by coating each of the mixtures on a ceramic tube impregnating ethylsili-cate and firing at 75$0^{\circ}C$ Each material mixture was evaluated by measuring and comparing gas sensitivity(resistance in air/resistance with gas) to flammable gases such as $CH_4$, $C_3H-8$ and n-$C_4H_{10}$. It was found that among fifteen compositions tested three compositions as follows show the highest gas sensitivity and thus are very feasible for commercialization as the gas sensors ; o49.5 $In_2O_3$+50 Al2O3_0.5 PdCl2(wt%) o $20In_2O_3+29$ $SnO_2+50$ $Al_2O_3+1$ $PdCl_2$(wt%) o40 $In_2O_3$+9 $Y_2O_3+50$ $Al_2O_3+1$ $PdCl_2$(wt%)

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.20-20
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• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.39-49
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• 1999

Monolayer thick fluorocarbon films were characterized by the contact angle measurements. The contact angles of three different liquids, water, formamide and diiodomethane were measured on spun coated, vapor phased deposited films and Teflon surface. The highest contact angle over $130^{\circ}$was observed on fluorocarbon films deposited on Al substrates while the lowest angles below $70^{\circ}$deposited on oxide. The surface energies were calculated based on Lewis acid /base theory. The surface energies of Teflon and spin coated FC films were calculated to have 18 and 8.4 dynes /cm, respectively. Higher energies of 31 to .35 dynes /cm were calculated on vapor phase deposited films on silicon and oxide. However vapor phase deposited films on aluminum only showed a large Lewis base energy term. It might be explained by the surface roughness and heterogeneity as observed by dynamic contact angles and AFM measurements.

• The Journal of Korean Academy of Prosthodontics
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• v.44 no.5
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• pp.617-627
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• 2006

Statement of problem: HA has been used as a coating material on Ti implants to improve osteoconductivity. However. it is difficult to form uniform HA coatings on implants with complex surface geometries using a plasma spraying technique. Purpose : To determine if Ti6Al4V sintered porous-surfaced implants coated with HA sol-gel coated and hydrothermal treated would accelerate osseointegration. Materials and Methods : Porous implants which were made by electric discharge were used in this study. Implants were anodized and hydrothermal treatment or HA sol-gel coating was performed. Hydrothermal treatment was conducted by high pressure steam at $300^{\circ}C$ for 2 hours using a autoclave. To make a HA sol, triethyl phosphite and calcium nitrate were diluted and dissolved in anhydrous ethanol and mixed. Then anodized implant were spin-coated with the prepared HA sols and heat treated. Samples were soaked in the Hanks solution with pH 7.4 at $37^{\circ}C$ for 6 weeks. The microstructure of the specimens was observed with a scanning electron microscope (SEM), and the composition of the surface layer was analyzed with an energy dispersive spectroscope (EDS). Results : The scanning electron micrographs of HA sol-gel coated and hydrothermal treated surface did not show any significant change in the size or shape of the pores. After immersion in Hanks' solution the precipitated HA crystals covered macro- and micro-pores The precipitated Ca and P increased in Hanks' solution that surface treatment caused increased activity. Conclusion : This study shows that sol-gel coated HA and hydrothermal treatment significantly enhance the rate of HA formation due to the altered surface chemistry.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.12
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• pp.1431-1434
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• 2014

The thermal barrier coating (TBC) applied to a gas turbine can be damaged by repeated thermal fatigue during operation, so an evaluation of its durability is needed. Thermally grown oxide (TGO) is generated inside the TBC in a high-temperature environment. The growth of TGO is known to be the main cause of damage to the TBC. Therefore, the durability of TBC should be evaluated according to the growth of TGO. In this research, Kim et al.'s work on the growth of TGO with aging was used as a basis for finite element analysis. The relationship between stress and aging was derived from the finite element analysis results. The durability of the TBC with aging was evaluated through a comparison between the results of the finite element analysis and a bond strength test.

• Progress in Superconductivity
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• v.9 no.2
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• pp.167-172
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• 2008

We fabricated $YBa_2Cu_3O_{7-x}$(YBCO) films on (00l) $LaAlO_3$ substrates prepared by metal organic deposition(MOD) method using trifluoroacetate(TFA) solution. The films with various thicknesses were prepared by repeating the dip-coating and calcining processes. The effects of film thickness on phase formation, microstructures, and critical properties were evaluated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The microstructure and resultant critical current($I_C$) and critical current density($J_C$) varied remarkably with film thickness: The ($I_C$) value increased from 39 to 160 A/cm-width as the number of coatings increased from one to four, while the corresponding $J_C$ was measured to be in the range of $0.84-1.21\;MA/cm^2$. Both the $I_C$ and $J_C$ decreased when an additional coating was applied due to microstructural degradation, indicating that the optimum thickness is in the range of $1.1-1.8\;{\mu}m$. The possible cause for the decrease in the $I_C$ and $J_C$ value for film thicker than $1.8\;{\mu}m$ include non-uniform thickness, increased surface roughness, and the poor formability of the YBCO phase and texture arising from the insufficient heat treatment time with respect to the increased thickness.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1205-1210
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• 1999

Far infrared ceramic/aluminum composite powders for thermal spray were fabricated by spray drying method and investigated the characteristics of the plasma sprayed coating layers, I.e. microstructure, phases, thermal shock resistance and spectral emissivity. The shape of the spray dried composite powder was spherical and the particle size distribution was 34~105${\mu}m $. Aluminum was distributed homogeneously in the spray dried composite powder. Spectral emissivity of the plasma sprayed coating layer ranges from 3 to 14${\mu}m $ whereas spectral emissivity of the raw ceramic powder ranges from 8 to 14${\mu}m $. And then spectral emissivity of the coatings was better than that of the raw powder but spectral emissivity was decreased with increasing aluminum content. It was found that aluminum content ranging from 20 to 30wt% was suitable for fabricating far-infrared radiator by plasma spraying method.

• Korean Chemical Engineering Research
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• v.58 no.1
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• pp.52-58
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• 2020

Electrochemical characterization and thermal stability were investigated for MgF₂ coated LiNi_0.8Co_0.15Al_0.05O₂ cathode. The ratio of MgF₂ was controlled by 0.5, 1, 3 wt%. Cyclic voltammetry, charge-discharge profiles, rate capability, cycle life were measured for electrochemical properties. DSC analysis was measured for thermal stability. The first discharge capacities of MgF₂ coated LiNi_0.8Co_0.15Al_0.05O₂ were decreased at 0.1C-rate compared to pristine LiNi_0.8Co_0.15Al_0.05O₂. But the rate capability and cycle life of MgF₂ coated LiNi_0.8Co_0.15Al_0.05O₂ were improved at 2C-rate. In DSC analysis result, the exothermic temperature of MgF₂ coated LiNi_0.8Co_0.15Al_0.05O₂ was increased and peak height was decreased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.276-281
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• 2021

In order to manufacture a semiconductor circuit, etching, cleaning, and deposition processes are repeated. During these processes, the inside of the processing chamber is exposed to corrosive plasma. Therefore, the coating of the inner wall of the semiconductor equipment with a plasma-resistant material has been attempted to minimize the etching of the coating and particle contaminant generation. In this study, we synthesized yttrium oxyfluoride (YOF) powder by a solid-state reaction using Y₂O₃ and YF₃ as raw materials. Mixing ratio of the Y₂O₃ and YF₃ was varied from 1.0:1.0 to 1.0:1.6. Effects of the mixing ratio on crystal structure and microstructure of the synthesized YOF powder were investigated using XRD and FE-SEM. The synthesized YOF powder was successfully applied to plasma spray coating process on Al substrate.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.