• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2013.05a
• /
• pp.112-113
• /
• 2013

Thin CrAlMgSiN films, whose composition were 30.6Cr-11.1Al-7.3Mg-1.2Si-49.8N (at.%), were deposited on steel substrates in a cathodic arc plasma deposition system. They consisted of alternating crystalline Cr-N and AlMgSiN nanolayers. After oxidation at $800^{\circ}C$ for 200 h in air, a thin oxide layer formed by outward diffusion of Cr, Mg, Al, Fe, and N, and inward diffusion of O ions. Silicon ions were relatively immobile at $800^{\circ}C$. After oxidation at $900^{\circ}C$ for 10 h in air, a thin $Cr_2O_3$ layer containing dissolved ions of Al, Mg, Si, and Fe formed. Silicon ions became mobile at $900^{\circ}C$. After oxidation at $900^{\circ}C$ for 50 h in air, a thin $SiO_2-rich$ layer formed underneath the thin $Cr_2O_3$ layer. The film displayed good oxidation resistance. The main factor that decreased the oxidation resistance of the film was the outward diffusion and subsequent oxidation of Fe at the sample surface, particularly along the coated sample edge.

• Applied Microscopy
• /
• v.29 no.3
• /
• pp.281-289
• /
• 1999

The stirred and thixoformed $SiC_p/AZ91HP$ Mg composites are studied on the basis of microstructural analysis using transmission electron microscopy (TEM). The products of interfacial reaction are identified as $Mg_2Si$, MgO and $Mg_{17}Al_{12}$ phases and the crystallized phases are found to be orthorhmbic $Al_6Mn$ and decagonal T phases. It is shown that $Mg_2Si$ and $Mg_{17}Al_{12}$ phases are found at the surface of $SiC_p$ and $Al_6Mn$ is found near interface and crystallized on the matrix. Phase identification is carried out by crystallographic work based on primitive cell volume, zero order Laue zone (ZOLZ) patterns and single convergent beam electron diffraction (CBED) patterns containing higher order Laue zone ring from a nanosized region.

• Journal of Korea Foundry Society
• /
• v.22 no.1
• /
• pp.42-48
• /
• 2002

Effects of coating treatment of metallic Cu, Ni-P film on $SiC_p$, for $SiC_p$/iron aluminide composites were studied. Porous hybrid preforms were fabricated by reactive sintering after mixing the coated $SiC_p$, Fe and Al powders. Then the final composites were manufactured by squeeze casting after pouring AC4C Al alloy melts in preforms. The change of reactive temperature, density, microstructure of the preforms and microstructure of the composites were investigated. The exprimental results were summarized as follows. The thickness of Cu and Ni-P metallic layer formed on $SiC_p$ by electroless plating method were about $0.5{\mu}m$ and coated uniformly. There was no remakable change in the ignition temperature with variation of the mixing ratio of Fe and Al powder while in the case of coated $SiC_p$ it was lower about $20^{\circ}C$ than in the non-coated $SiC_p$. The maximum reaction temperature increased with increasing Al contents, but decreased with increasing $SiC_p$ contents. Expansion ratio of preform after reactive sintering increased with amount of Cu coated $SiC_p$. In the case of Fe-70at.%Al, the expansion ratio was about 7% up to 8wt.% of $SiC_p$, addition but further addition of $SiC_p$, increased the ratio significantly. And in the case of Fe-50 and 60at.%Al, it was about 20% up to 16wt.% of $SiC_p$ addition and about 28% in 24wt.% of $SiC_p$, addition. The microstructures of compounds showed that the grains became finer as amount of $SiC_p$, and mixing ratio of iron powder increased and the shape of compounds was changed gradually from irregular to spheroidal.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.2
• /
• pp.98-103
• /
• 1999

The effect of $Al_2O_3$ additives to $\beta-SiC+39vol.%ZrB_2$ electroconductive ceramic composites by pressureless sintering on microstructural, mechanical and electrical properties were investigated. The $\beta-SiC+39vol.%ZrB_2$ ceramic composites were pressureless sintered by adding 4, 8, 12wt.% $Al_2O_3$ powder as a liquid forming additives at $1950^{\cire}C$ for 1h. Phase analysis of composites by XRD revealed mostly of $\alpha-SiC(6H), ZrB_2$ and weakly $\alpha-SiC(4H), \beta-SiC (15R)$ phase. The relative density of composites was lowered by gaseous products of the result of reaction between \beta-SiC and Al_2O_3$, therefore, porosity was increased with increasing $Al_2O_3$ contents, and showed the maximum value of 1.4197MPa.$m^{1/2}$ for composite with 4wt.% $Al_2O_3$ additives. The electrical resistivity of $\beta-SiC+39vol.%ZrB_2$ electroconductive ceramic composite was increased with increasing $Al_2O_3$ contents, and showed positive temperature coefficient resistance (PTCR) in the temperature range of $25^{\cire}C$ to $700^{\cire}C$.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.5
• /
• pp.808-815
• /
• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
• /
• 2006.11a
• /
• pp.5-13
• /
• 2006

Based on the inventions of continuous ceramic fibers, such as C, SiC, $Al_2O_3$ etc., by polymer precursor driven methods, there have been many efforts to fabricate ceramic continuous fiber reinforced composite materials with metals and ceramics matrices. The main purpose of the R & D efforts has been to produce materials for severe environments, including advanced energy systems, advanced transportation systems. The efforts have been started from the R & D of metal matrix composite materials and now the strong emphasis on ceramic matrix composites R & D can be recognized. This paper provides a brief review about the national efforts to establish advanced composite materials for future industries starting from mid 70s. C/Al and SiC/Al are the typical examples to be applied transportation systems and energy systems. The excellences in specific strength and overall mechanical properties, the excellences in environmental resistance make those materials as potential materials for advanced ocean construction and marine transportation systems. About the recent progress in ceramic fiber reinforced ceramic composites, advanced SiC/SiC composites including NITE-SiC/SiC will be introduced and the present status will be introduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.10
• /
• pp.828-833
• /
• 2000

Growth characteristics and microstructure of AIN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the micorstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• Journal of the Korean Ceramic Society
• /
• v.25 no.6
• /
• pp.704-712
• /
• 1988

In order to investigate the effect of the second phase on Al2O3 matrix, SiC whisker was dispersed in Al2O3 matrix as a second phase over the content range of 5vol% to 20vol%. To this mixture, Y2O3 or TiO2 powder was added as a sintering additive before isostatically pressing and pressureless sintering at 1800-190$0^{\circ}C$ for 90min in N2 atmosphere. With increasing SiC whisker content, relative densities of composites were decreased and the grain growth of Al2O3 was restricted. When Y2O3 was added as a sintering aid the sintering temperature was 180$0^{\circ}C$, the maximum values of flexural strength, hardness and fracture toughness were 537MPa, 12.1GPa, 3.7MPa.m1/2, respectively. However, when the sintering temperature was elevated to 190$0^{\circ}C$, maximum values of flexural strength, hardness and fracture toughness were 453MPa, 17.5GPa, 4.9MPa.m1/2, respectively. Improved mechanical properties are assumed to be attributed to the crack deflection by the second phase SiC whisker and whisker pullout mechanism.

• Journal of the Korean Ceramic Society
• /
• v.29 no.3
• /
• pp.223-231
• /
• 1992

CaO and ZnO were added to Al2O3-SiO2 binary system respectively as flux, then ZrO2 and TiO2 were applied as nucleating agent to these CaO-Al2O3-SiO2 and ZnO-Al2O3-SiO2 ternary system glass. The transparency could not be kept in CaO-Al2O3-SiO2 system glass, whereas the transparent glass-ceramics were prepared in ZnO-Al2O3-SiO2 system glass containing ZrO2 as the nucleating agent. At this time the optimum heating temperatures for the nucleation and the crystal growth were 78$0^{\circ}C$ and 97$0^{\circ}C$. The sizes of the precipitated crystals in the transparent glass-ceramics were below 0.1 ${\mu}{\textrm}{m}$, and their light transmissibilities were more than 80%.

• Journal of the Korean institute of surface engineering
• /
• v.34 no.2
• /
• pp.135-141
• /
• 2001

Arc-melted Ti-6Al-4V, Ti-4Fe and Ti-(1,2) Si alloys were oxidized at 700, 800, 900 and $1000^{\circ}C$ in air. The oxidation resistance of Ti-4Fe was comparable to that of Ti-6Al-4V, while the oxidation resistance of Ti-(1,2) Si was superior to that of Ti-6Al-4V. Ti-2Si displayed the best oxidation resistance among the four alloys, but failed after oxidation at $1000^{\circ}C$ for 17h. The oxide scale formed on Ti-6Al-4V, Ti-4Fe and Ti-(1,2)Si consisted of ($TiO_2$ and a small amount of $Al_2$$O_3$), ($TiO_2$ and a small amount of dissolved iron), and ($TiO_2$ plus a small concentration of amorphous $SiO_2$), respectively. The oxide grains of the surface scale of the four alloys were generally fine and round.