• 제목/요약/키워드: Al-Si coated layer

검색결과 87건 처리시간 0.028초

합금도금강판의 수적에 의한 표면층의 부식기구에 관한 연구 (A Study on the Corrosion Mechanism by the Moisture on the Surface Layer of the Alloys Coated Steel Sheet)

  • 김영호;김순경;전언찬
    • 한국기계가공학회지
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    • 제1권1호
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    • pp.71-78
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    • 2002
  • Since the early 1980's the use of zinc-aluminum alloy-coated steel sheet(Galvalume) for vehicular corrosion protection has increased drastically. It is consisting of 55%Al-43.4% Zn-1.6%Si. Galvalume has a good corrosion resistance, heat reflectivity and shiny appearance, which has a dendritic structure of alloy layer. It has a good corrosion resistance due to dendritic structure. But, this also has a weak point against moisture during long period of transportation as sheeted and or coiled without any relation of chromating on the surface of steel sheet or not because of high humidity and temperature. Here, We studied the corrosion mechanism by the moisture.

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A Study on the Optical Property of Al-N-codoped p-type ZnO Thin Films Fabricated by DC Magnetron Sputtering Method

  • Liu, Yan-Yan;Jin, Hu-Jie;Park, Choon-Bae
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.319-320
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    • 2009
  • In this study, high-quality Al-N doped p-type ZnO thin films were deposited on n-type Si (100) wafer or Si coated with buffer layer by DC magnetron sputtering in the mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin film showed higher carrier concentration $2.93\times10^{17}cm^{-3}$, lower resistivity of $5.349\;{\Omega}cm$ and mobility of $3.99\;cm^2V^{-1}S^{-1}$, respectively. According to PL spectrum, the Al donor energy level depth ($E_d$) of Al-N codoped p-type ZnO film was reduced to about 51 meV, and the N acceptor energy level depth ($E_a$) was reduced to 63 meV, respectively.

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Characteristics of SAW humidity sensor using nanocrystalline ZnO films

  • 황시홍;정귀상
    • 센서학회지
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    • 제19권5호
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    • pp.337-341
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    • 2010
  • In this work, the nanocrystalline ZnO/polycrystalline(poly) aluminum nitride(AlN)/ Si-layered structure was fabricated for humidity sensor applications based on surface acoustic wave(SAW). The ZnO film was used as a sensitive material layer. The ZnO and AlN(0002) were deposited by a sol-gel process and a pulse reactive magnetron sputtering, respectively. The ZnO sensitive films coated on AlN have a hexagonal wurtzite structure after the thin films annealed at $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$. The surface of the film exhibits sponginess and a nanometer particle size(below 50 nm). The largest shift in the frequency response was at approximately 200 kHz(the relative humidity: 10 %~90 %) for the structure annealed at $400^{\circ}C$. The effect of the change in the environmental temperature on the frequency response of the SAW humidity sensor was also investigated.

AlOx와 SiO2 형판위 CdSe와 CdS 박막의 우선방위(Preferred Orientation) 특성 (The Preferred Orientation of CdSe and CdS Thin Films on the AlOx and SiO2 Templates)

  • 이영건;장기석
    • 한국군사과학기술학회지
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    • 제15권4호
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    • pp.502-506
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    • 2012
  • In order to find the structural characteristics of the thin films of group II-VI semiconductor compounds compared with those of powder materials, films were made of 4 powders of ZnS, CdS, CdSe, and CdTe(Aldrich), each with 99.99 % purity. For the ZnS/CdS multi-layers, the ZnS layer was coated over the CdS layer on an $AlO_x$ membrane, which served as a protective layer within a vacuum at the average speed of 1 ${\AA}$/sec. After studying the structures of the group II-VI semiconductor thin films by using X-ray spectroscopy, we found that the ZnS, ZnS/CdS, CdS, and CdSe films were hexagonal and exhibited some degree of preferred orientation. Also, the particles of the thin films of II-VI semiconductor compounds proved to be more homogeneous in size compared to those of the powder materials. These results were further verified through scanning electron microscopy(SEM), EDX analysis, and powder and thin film X-ray diffraction.

게이트절연막의 열처리가 Zinc Tin Oxide 투명 박막트랜지스터의 특성에 미치는 영향 (Annealing Effects of Gate-insulator on the Properties of Zinc Tin Oxide Transparent Thin Film Transistors)

  • 마대영
    • 한국전기전자재료학회논문지
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    • 제28권6호
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    • pp.365-370
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    • 2015
  • Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized $n^+$ Si wafers. The thickness of ~30 nm $Al_2O_3$ films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The $Al_2O_3$ films were rapid-annealed at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1,000^{\circ}C$, respectively. Active layers of ZTO films were deposited on the $Al_2O_3/SiO_2$ coated $n^+$ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of $Al_2O_3$ films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.

Processing and Microstructure of Alumina Coated with $Al_2O_3$/SiC Nanocomposite

  • Ha, Jung-Soo;Kim, C-S.;D-S. Cheong
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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    • pp.19-22
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    • 1997
  • The surface modificaion of alumina by $Al_2$O$_3$/SiC nanocomposite coating was studied in terms of processing and microstructure. A powder slurry of 5 vol% SiC composition was dipcoated onto presintered alumina bodies and pressurelessly sintered at 1$700^{\circ}C$ for 2 h in $N_2$. The used of organic binder and plasticizer in the slurry preparation, and the control of the density of presintered alumina body were found to be necessary to avoid cracking and warping during processing. The nanocomposite coating well bonded to the alumina body with thickness about 110 ${\mu}{\textrm}{m}$. The average grain size of coating (2 ${\mu}{\textrm}{m}$) was much finer than that of alumina body (13 ${\mu}{\textrm}{m}$). Fracture surface observations revealed mostly transgranular fracture for the coating, whereas intergranular fracture for the alumina body. Some pores (about 6%) were observed in the coating layer, although the alumina body showed fully dense microstructure.

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Thin Film Adhesion and Cutting Performance in Diamond-Coated Carbide Tools

  • Jong Hee Kim;Dae Young Jung;Hee Kap Oh
    • The Korean Journal of Ceramics
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    • 제3권2호
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    • pp.105-109
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    • 1997
  • The effects of surface conditions of the C-2 cemented carbide substrate on the adhesion of diamond film were investigated. The substrates were pretreated for different times with Murakami's reagent and then the acid solution of an H2SO4-H2O2. The adhesion strength was estimated by a peeling area around the Rockwell-A indentation. The cutting performance of the diamond-coated tools was evaluated by measuring flank wears in dry turning of Al-17% Si alloy. The morphology of deposited diamond crystallites was dominated by (111) and (220) surfaces with a cubooctahedral shape. The diamond film quality was hardly affected by the surface conditions of the substrate. The variation of tool life with longer substrate etching times resulted from a compromies between the increase of film adhesion at the interface and the decrease of toughness at the substrate surface. The coated tools were mainly deteriorated by chipping and flaking of the diamond film form a lock of adhesion strength, differently from the wear phenomena of PCD tools.

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Electromagnetic Properties of Siver Coated Iron based Alloy Powders Prepared by Chemical Reduction Method

  • Lee, Byoung-Yoon;Lee, Jae-Wook;Yun, Yeo-Chun;Jeong, In-Bum;Moon, Joo-Ho
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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    • pp.1213-1214
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    • 2006
  • The synthesis of silver coated iron base alloy (Sendust : Fe-Si-Al) powder having the both effects of shielding and suppressing of electromagnetic wave was studied. Depending on thickness of silver coating layer, the electromagnetic properties of the dispersed particles complexed with organic binder were examined. It is proposed that the silver coated sendust flake powders with controlled electrical properties and thickness can be used as thin microwave absorbers in quasi-microwave frequency band.

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Gas Permeation of SiC Membrane Coated on Multilayer γ-Al2O3 with a Graded Structure for H2 Separation

  • Yoon, Mi-Young;Kim, Eun-Yi;Kim, Young-Hee;Whang, Chin-Myung
    • 한국재료학회지
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    • 제20권9호
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    • pp.451-456
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    • 2010
  • A promising candidate material for a $H_2$ permeable membrane is SiC due to its many unique properties. A hydrogen-selective SiC membrane was successfully fabricated on the outer surface of an intermediate multilayer $\gamma-Al_2O_3$ with a graded structure. The $\gamma-Al_2O_3$ multilayer was formed on top of a macroporous $\alpha-Al_2O_3$ support by consecutively dipping into a set of successive solutions containing boehmite sols of different particle sizes and then calcining. The boehmite sols were prepared from an aluminum isopropoxide precursor and heated to $80^{\circ}C$ with high speed stirring for 24 hrs to hydrolyze the precursor. Then the solutions were refluxed at $92^{\circ}C$ for 20 hrs to form a boehmite precipitate. The particle size of the boehmite sols was controlled according to various experimental parameters, such as acid types and acid concentrations. The topmost SiC layer was formed on top of the intermediate $\gamma-Al_2O_3$ by pyrolysis of a SiC precursor, polycarbosilane, in an Ar atmosphere. The resulting amorphous SiC-on-$Al_2O_3$ composite membrane pyrolyzed at $900^{\circ}C$ possessed a high $H_2$ permeability of $3.61\times10^{-7}$ $mol{\cdot}m^{-2}{\cdot}s^{-1}{\cdot}Pa^{-1}$ and the $H_2/CO_2$ selectivity was much higher than the theoretical value of 4.69 in all permeation temperature ranges. Gas permeabilities through a SiC membrane are affected by Knudsen diffusion and a surface diffusion mechanism, which are based on the molecular weight of gas species and movement of adsorbed gas molecules on the surface of the pores.

AI$_2$O$_3$ Preform에 대한 용융 Al 합금의 자발적 침윤 기구 (The Spontaneous Infiltration Mechanism of Molten Al Alloy to AI$_2$O$_3$ Preform)

  • 이동윤;박상환;이동복
    • 한국세라믹학회지
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    • 제35권7호
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    • pp.685-690
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    • 1998
  • Al2O3에 대한 용융 Al의 자발적 침윤 기구를 밝히기 위하여 순수한 Al 및 Al-(Si)-Mg 합금의 Al2O3에 대한 wet-ting angle과 침윤 특성을 진공, 아르곤, 그리고 질소분위기에서 관찰하였다. Al2O3에 대한 용융 Al 및 Al 합금의 wetting은 진공 분위기에서만 이루어졌으나, Al2O3에 대한 용융 Al 합금의 자발적 침윤은 질소 분위기하 Al 합금에 합금 원소로써 Mg가 함유되었을 때에 일어났다. Al2O3에 대한 용융 Al 및 Al 합금의 wettability와 자발적 침윤 특성의 차이는 Al2O3 표면에 형성되는 Mg-N화합물에 직접적인 영향을 받는 것으로 나타났다. Al2O3 입자 표면에 얇게 형성되는 Mg와 질소의 화합물 즉, Mg3N2가 Al2O3에 대한 용윤 Al 합금의 wettability를 향상시켜 $700^{\circ}C$의 온도에서도 Al 합금의 자발적 침윤이 가능하여 Al/Al2O3 복합재료를 무가압 상태에서 제조할 수 있었다.

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