• 대한화학회지
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• 제23권6호
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• pp.358-367
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• 1979

아세트아미드, 디아세트아미드 및 그들의 양성자 부가물들에 대한 형태 결정을 목적으로 EHT 및 CNDO/2계산을 실시하였다. 계산 결과에 따르면 $H^+$와 N간의 인력으로 인하여 양성자는 항상 N에 대하여 cis위치에 첨가되는 것이 유리하며, 양성자 부가가 안되었을 때는 cis-trans형이 가장 안정하지만 양성자 부가물은 오히려 trans-trans 형이 가장 안정하였다. 양성자 첨가는 첨가된 카르보닐기의 탄소의 陽하전을 증가시키고 또 ${\pi}$-LUMO의 AO 계수를 증대시키므로 charge controlled 및 orbital controlled 친핵 반응을 모두 촉진시킬 것이 예상되었다. 그러므로 디아세트아마이드의 酸촉매 가수분해 반응에서는 친핵체인 물 分子가 양성자和된 카르보닐탄소를 공격할 것이며 그 탄소와 질소간의 결합이 끊어지게 될 것이다. 이 메카니즘은 묽은 酸속에서의 아미드류의 가수분해 메카니즘으로 알려진 것과 일치하며 N-아세틸 락탐의 산촉매 가수분해 메카니즘으로 제안된 $Laurent^3$등의 것과는 다르다.

• 한국재료학회지
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• 제4권1호
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• pp.31-36
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• 1994

Mn-Zn ferrite를 가공하여 VCR헤드의 제조과정에서 비자성체 gap용 $SiO_{2}$증착층과 유리와의 접합시 유리내에 기포 형태의 결함이 발생하는 경우가 있다. 기판의 조도나 $SiO_{2}$의 증착속도의 영향을 분석한 결과, 기포의 생성원인이 $SiO_{2}$ 증착층과 접합유리의 융착시 계면에 존재하는 요철의 불완전한 충진에 의한 것으로 나타났다. 따라서 이러한 기포생성을 억제시키는 위해서는 기판을 최대한 경면 연마시켜 표면조도를 작게하고 $SiO_{2}$증착속도를 조절함으로써 $SiO_{2}$증착층의 표면조도를 작게하여 유리 융착시 계변의 요철 크기를 작게해야 한다. 기판을 0.05$\mu\textrm{m}$알루미나 분말로 경면연마시키고, 10% Osub 2/분압을 갖는 Ar plasma상태하로 조절된 증착속도로 즈악된 $SiO_{2}$증착층과 접합유리의 융착시 기포가 전혀 발생치 않았다.

• 대한화학회지
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• 제18권3호
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• pp.180-188
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• 1974

Layer silicate 에 지지된 陽이온상에서의 일어난 acetaldehyde, acrolein, 그리고 crotonaldehyde의 吸着機構에 對하여 IR과 X-ray로서 硏究하였다. $1720∼1580㎝^{-1}$의 범위에서 일어난 4個의 특성적인 吸捉 band를 分析한 結果 $130㎝^{-1}$程度로 shift한 carbonyl band 는 >C=O${\cdots}$M형 complex 形成에 基因하는 것이었고, acetaldehyde는 $1722㎝^{-1}$에서, 다른 알데히드는 $1690㎝^{-1}$에서 sharp하게 나타난 carbonyl band는 >C=O와 surface -O-H와의 interaction에서 일어난 것이었다. 그리고 1710∼1660㎝-1에서 나타난 broad한 band는 >C=O와 陽이온 -O-H와의 사이에 일어난 水素結合에 依한 것이었다. 그리고 $1640∼1660㎝^{-1}$사이에 나타난 弱한 band는 carbonyl group 의 强한 吸着에 依하여 誤起된 >C=C< 二重結合에 依한 것이었다. 이 사실들은 X-ray 廻折에 依하여 다시 確認하였다.

• 부모자녀건강학회지
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• 제1권
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• pp.56-74
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• 1998

The language of the newborn, like that of adults, is one of gesture, posture, and expression(Lewis, 1980). Helping parents understand and respond to their newborn's cues will make caring for their baby more enjoyable and may well provide the foundation for a communicative bond that will last lifetime. Infant state provides a dynamic pattern reflecting the full behavioral repertoire of the healthy infant(Brazelton, 1973, 1984). States are organized in a predictable emporal sequence and provide a basic classification of conditions that occur over and over again(Wolff, 1987). They are recognized by characteristic behavioral patterns, physiological changes, and infants' level of responsiveness. Most inportantly, however, states provide caregivers a framework for observing and understanding infants' behavior. When parents know how to determine whether their infant is sleep, awake, or drowsy, and they know the implications, recognition of states has for both the infant's behavior and for their caregiving, then a lot of hings about taking care of a newborn become much easier and more rewarding. Most parents have the skills and desire to do what is best for their infant. The skills 7373parents bring to the interaction are: the ability to read their infant's cues: to stimulate the baby through touch, movement, talking, and looking at: and to respond in a contingent manner to the infant's signals. Among the crucial skills infants bring to the interaction are perceptual abilities: hearing and seeing, the capacity to look at another for a period of time, the ability to smile, be consoled, adapt their body to holding or movement, and be regular and predictable in responding. Research demonstrates that the absence of these skills by either partner adversely affects parent-infant interaction and later development. Observing early parent-infant interactions during the hospital stay is important in order to identify parent-infant pairs in need of continued monitoring(Barnard, et al., 1989).

• 대한기계학회논문집A
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• 제38권12호
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• pp.1431-1434
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• 2014

가스터빈에 적용되는 열차폐코팅은 가동 중 반복적인 열피로에 의하여 파손되므로, 열차폐코팅의 내구성평가가 필요하다. 고온 환경에 노출된 열차폐코팅의 내부에는 열생성산화물(TGO)이 성장하게 되는데, 이러한 열생성산화물(TGO)의 성장은 열차폐코팅의 주요 파손 원인으로 알려져 있다. 따라서 TGO의 성장을 고려한 열차폐코팅의 내구성평가는 반드시 선행되어야 하는 연구이다. 본 연구에서는 김대진등의 연구 결과로부터 열화시간에 따른 TGO 성장을 고려하여 유한요소해석을 수행하였으며, 이로부터 응력과 열화시간 사이의 관계를 도출하였다. 또한 열화시간에 따른 유한요소해석 결과와 김대진 등의 접착강도 시험 결과의 비교를 통하여 열차폐코팅의 내구성을 평가하였다.

• 한국표면공학회지
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• 제32권2호
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• pp.144-156
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• 1999

Thermal Barrier Coating with Functional Gradient Materials (FGM-TBC) can play an important role to protect the parts from harmful environments in high temperatures such as oxidation, corrosion, and wear and to improve the efficiency of aircraft engine by lowering the surface temperature on turbine blade. FGM-TBC can increase the life spans of product and improve the operating properties. Therfore, in this study the evaluations of mechanical and thermal properties of FGM-TBC such as fatigue, oxidation and wear-resistance at high temperatures have been conducted. The samples of both the TBC with 2, 3, 5 layers (YSZ/NiCrAlY) to be produced by Air Plasma Spray method (APS) and the bulk TBC with 6 layers to be produced by Plasma Assisted Sintering method (PAS) were used. Furthermore, residual stress, bond strength, and thermal conductivity were evaluated. The average thickness of the APS was 500$\mu\textrm{m}$ to 600$\mu\textrm{m}$ and the average thickness of the PAS was 3mm. The hardness number of the top layer of APS was 750 Hv to 810Hv and that of PAS was 950 Hv to 1440Hv. The $ZrO_2$ coating layer of APS was composed of tetragonal structure after spraying as the result of XRD analysis. As shown in the results of the high temperature wear test, the 3 layer coating of APS had the best wear resistance at $800^{\circ}C$ and the 5 layer coating of APS had the best wear resistance at $600^{\circ}C$. But, these coatings had the tendency of the low-temperature softening at $300^{\circ}C$. The main mechanism of wear was the adhesive wear and the friction coefficient of coatings was increased as increasing the test temperatures. A s results of thermal conductivity test, the ${\Delta}T$ of the APS coating was increased as number of layer and the range of thermal conductivity of the PAS was $800^{\circ}C$ to $1000^{\circ}C$.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2005년도 춘계학술발표대회 개요집
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• pp.54-56
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• 2005

Ultrasonic soldering using of Si-wafer to FR-4 PCB atroom temperature was investigated. Sn3.5Ag foil rolled $100{\mu}m$ was used for solder. The UBM of Si-die was Cu/ Ni/ Al from top to bottom and its thickness was $0.4{\mu}m$, $0.4{\mu}m$, $0.3{\mu}m$ respectively. Pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom and its thickness was $0.05{\mu}m$, $5{\mu}m$, $18{\mu}m$ respectively. The ultrasonic soldering time was changed from 0.5sec to 3.0sec and its power 1400W. As experimental result, reliable bond joint by ultrasonic at room temperature was obtained. The shear strength increased with soldering time up to 2.5 sec. That means at 2.5sec, the shear strength showed maximum rate of 65.23N. The strength decreased to 33.90N at 3.0 sec because the cracks generated along the intermetallic compound between Si-wafer and Sn-3.5mass%Ag solder. intermetallic compound produced by ultrasonic between the solder and the Si-die was $(Cu, Ni)_{6}Sn_{5}$ and the intermetallic compound between solder and pad on FR-4 was $(Ni, Cu)_{3}Sn_{4}$.

• ETRI Journal
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• 제31권6호
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• pp.660-666
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• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• 대한소아치과학회지
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• 제27권3호
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• pp.431-437
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• 2000

외상성 함입탈구는 유치열에서는 흔하지만 영구치열에서는 매우 드문 질환으로 그 예후가 좋지 않은 것으로 널리 알려져 있다. 치료법으로는, 치아의 자발적 맹출을 허용하거나, 외과적으로 재위치시킨 후 고정시키는 방법, 외과적인 탈구술 및 교정력을 이용한 재위치술 등이 있었으나, 각각의 단점들이 보고되어 왔다. 한편 치아를 외과적으로 아탈구시킨 후 바로 교정력을 적용시켜, 좋은 성과가 보고된 바 있었는데 완전 함입례에서는 교정용 button 이나 bracket을 bonding하기가 적절치 않다. 본 증례는 비강내로까지의 심한 함입탈구 소견을 보이는 환아의 치료에 관한 것이다. 우선 full mucogingival flap을 행하고, 치주인대의 압박 괴사를 최소화시키기 위해 disimpaction시킬 목적으로 백악-법랑 경계부가 노출되지 않는 범주 내에서 치조와 내로 외과적 재위치 시킨 후 교정적 견인력을 적용시키는 방법을 통해 비교적 양호한 결과를 얻게 되었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.