• Title/Summary/Keyword: Al thin film

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Effects of various deposition rate of $Al_2O_3$ gate insulator in OTFT (알루미늄 옥사이드를 절연층으로 이용한 유기박막 트랜지스터의 제작)

  • Choi, Kyung-Min;Hyung, Gun-Woo;Kim, Young-Kwan;Cho, Eou-Sik;Kwon, Sang-Jik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04a
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    • pp.72-73
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    • 2009
  • In this study, we fabricated of pentacene organic thin film trasistor(OTFT), which used aluminum oxide for the gate insulator on glass substrate. Aluminum oxide for OTFTs was deposited on the gate layer by E-beam evaporation. aluminum oxide fabricated various deposition rate. In this case of the deposition rate of $0.1\;{\AA}$, the fabricated aluminum oxide gate insulator OTFT showed a threshold voltage of -1.36V, an on/off current ratio of $1.9{\times}l0^3$ and field effect mobility $0.023\;cm^2/V_s$.

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Nano-size Patterning with a High Transmission C-shaped Aperture (고 투과 C 형 개구를 이용한 나노 크기 패턴 구현)

  • Park, Sin-Jeung;Kim, Yong-Woo;Lee, Eung-Man;Hahn, Jae-Won
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.11
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    • pp.108-115
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    • 2007
  • We have designed a high transmission C-shaped aperture using finite differential time domain (FDTD) technique. The C-shaped aperture was fabricated in the aluminum thin film on a glass substrate using a focused ion beam (FIB) milling. Nano-size patterning was demonstrated with a vacuum contact device to keep tight contact between the Al mask and the photoresist. Using 405 nm laser, we recorded a 50 nm-size dot pattern on the photoresist with the aperture and analyzed the spot size dependent on the dose illuminated on the aperture.

The efficiency charateristics of intrinsic layer thickness dependence for amorphous silicon single junction solar cells (Intrinsic layer 두께 가변에 따른 단일접합 비정질 박막 태양전지의 효율 특성 변화)

  • Yoon, Ki-Chan;Kim, Young-Kook;Heo, Jong-Kyu;Choi, Hyung-Wook;Yi, Young-Suk;Yi, Jun-Sin
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.80-82
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    • 2009
  • The dependence of the efficiency characteristics of hydrogenated amorphous silicon single junction solar cells on the various intrinsic layer thickness has been investigate in the glass/$SnO_2$:F/p,i,n a-Si:H/Al type of amorphous silicon solar cells by cluster PECVD system. The open circuit voltage, short circuit current, fill factor and conversion efficiency have been measured under AM 1.5 condition. The result of the cell performance was improved about 8.2% due to an increase in the short circuit current.

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Improvement of optical properties of transparent conducting oxide for thin film solar cell (박막 태양전지용 투명전도산화막의 광특성 향상에 관한 연구)

  • Lee, Seung-Hun;Tark, Sung-Ju;Kang, Min-Gu;Park, Sung-Eun;Kim, Won-Mok;Kim, Dong-Hwan
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.90-90
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    • 2009
  • 박막 태양전지의 단락전류를 증가시키기 위해서는 투명전도 산화막의 표면 식각을 통한 광포획 특성 극대화가 중요하며, 일반적으로 스퍼터링법으로 제작된 투명전도 산화막의 표면 식각은 HCl solution을 이용한다. 본 연구는 투면전도 산화막 증착시 seed로 작용할 수 있는 colloidal 형태의 nanoparticle을 유리기판에 형성한 뒤 rf-magnetron sputtering 법을 이용하여 ZnO:Al(AZO) 투명전도 산화막을 증착하여 광학 전기적 특성 변화를 분석하였다. Nanoparticle을 사용하여 제조된 AZO 박막은 nanoparticle의 확산에 의한 전자농도의 향상이 보였으나, 이동도의 감소로 인해 전기적 특성에 큰 변화는 없었다. 반면 AZO 박막의 표면형상이 nanoparticle로 인해 변하여 박막의 광 포획을 위한 안개도가 향상됨을 확인 할 수 있었으며, 이로 인해 표면 형상 제어를 통한 박막 태양전지 적용을 위한 투명전도 산화막을 제작할 수 있었다.

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A study on the Rheological Analysis of Tack Values using Alkyd Vanish for Printing Ink (인쇄잉크용 알킷트바니쉬를 이용한 택크값의 유변학적 특성연구)

  • 정윤회
    • Journal of the Korean Graphic Arts Communication Society
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    • v.8 no.1
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    • pp.1-20
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    • 1990
  • $\alpha$,$\beta$,$\varepsilon$ type copper phthalocy $\alpha$,$\beta$,$\varepsilon$ type copper phthalocyanine(CuPc) pigment was purified by a simple train sublimation technique. The layered photoconductor was made with $\varepsilon$ type CuPc as a carrier generation layer(CGL) and polyvinly carvazol(PVCz) as a carrier transport layer(CLT). A CGL of CuPc was electrochemical deposited on an Al substrate used as cathode in pigment dispersion solutions. a CTL of PVCz pwas spin coated on $\varepsilon$ type CuPc thin film by a spin coater. The effect of sonication time, electrophotographic property of the layered photoconductor were studied with surface coverage, surface potential and sensitivity.

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Preparation of AZO/Ag/AZO multilayer for transparent electrode by using facing targets sputtering method (대향 타겟 스퍼터링 법을 이용한 투명전극용 AZO/Ag/AZO 다층 박막의 제작)

  • Cho, Bum-Jin;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.290-291
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    • 2006
  • We prepared the multilayer with Al doped ZnO (AZO)/Ag/AZO structure. The multilayer were deposited with various thickness of Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. To investigate the electrical, optical and structural properties, we used Hall Effect measurement system, four-point probes. UV-VIS spectrometer with a wavelength of 300 - 100nm, X-ray Diffractometer(XRD) and scanning electron microscopy (SEM). We obtained multilayer thin film with the low resistivity $5,9{\times}10^{-5}{\Omega}cm$ and the average transmittance of 86% m the visible range (400 - 800nm).

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High Temperature Superconducting Pseudo-Lumped Element Bandpass Filter

  • Choi, Young-Hwan;Kim, Hong-Teuk;Moon, Seung-Hyun;Lee, Seung-Min;Oh, Byung-Du;Min, Byoung-Chul
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.107-111
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    • 1999
  • A high-temperature superconducting 1.78 GHz bandpass filter, designed for PCS applications, is presented. The structure consists of microstrip pseudo-lumped elements, which make the miniaturization of the filter possible. A 5-pole microstrip filter can be realized on 37 mm ${\times}$ 9 mm LaAlO$_3$ substrate, using double-sided high-temperature superconducting YBa$_2Cu_3O_{7-{\delta}}$ thin film. This filter shows 0.7% fractional bandwidth, 0.3 dB insertion loss, and 12 dB return loss in the passband at 60 K.

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Electrical Applications of OTFTs

  • Kim, Seong-Hyun;Koo, Jae-Bon;Lim, Sang-Chul;Ku, Chan-Hoi;Lee, Jung-Hun;Zyung, Tae-Hyoung
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.170-170
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    • 2006
  • [ ${\pi}-conjugated$ ] organic and polymeric semiconductors are receiving considerable attention because of their suitability as an active layer for electronic devices. An organic inverter with a full swing and a high gain can be obtained through the good qualities of the transfer characteristics of organic thin-film transistors (OTFTs); for example, a low leakage current, a threshold voltage ($V_{th}$) close to 0 V, and a low sub-threshold swing. One of the most critical problems with traditional organic inverters is the high operating voltage, which is often greater than 20 V. The high operating voltage may result in not only high power consumption but also device instabilities such as hysteresis and a shift of $V_{th}$ during operation. In this paper, low-voltage and little-hysteresis pentacene OTFTs and inverters in conjunction with PEALD $Al_{2}O_{3}\;and\;ZrO_{2}$ as the gate dielectrics are demonstrated and the relationships between the transfer characteristics of OTFT and the voltage transfer characteristics (VTCs) of inverter are investigated.

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C.C.D Camera를 이용한 RHEED Intensity Oscillation 측정

  • 김재훈;민항기;김재성
    • Proceedings of the Korean Vacuum Society Conference
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    • 1994.02a
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    • pp.122-123
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    • 1994
  • RHEED ppattern을 C.C.D Camera를 이용하여 관측한 후 C.C.D outpput signal을 Frame Garbber를 이용하여 Digitize하였다. Digitize된 RHEED ppattern의 정보로부터 원하는 Sppot의 intensity를 Image pprocessing Software를 개발하여 측정할 수 있다. [그림 1] 특히 thin film growth를 monitor하기 위하여 RHEED diffraction Sppot의 Intensity oscillation을 측정할 경우 실시간 측정이 필요하며 이를 위해 매우 빠른 속도의 data aquisition과 dispplay를 필요로 한다. 그림2는 이런 조건을 만족하는 software를 개발하여 실시간으로 측정한 AlGaAs/GaAs. multilayer RHEED Oscillation을 보여주고 있다. 이 실험은 매우 간단하고, 특별한 주의를 요하지 않으며, 측정되는 RHEED Sppot을 눈으로 동시에 관찰할 수 있어 실험 상황을 좀더 쉽게 monitor할 수 있게 해준다. 또한 data-aquitition. data-analysis, data-dispplay를 한 대의 compputer를 이용해 손쉽고 값싸게 할 수 있으므로, opptical fiber와 pphoto-diode, X-Y recorder등을 동원한 기존의 번잡한 실험을 대체할 수 있을 것이다.

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Novel Oxide Thin Film Transistors for Transparent AMOLED

  • Cho, Doo-Hee;Yang, Shin-Hyuk;Byun, Chun-Won;Lee, Jeong-Ik;Hwang, Chi-Sun;Kopark, Sang-Hee;Chu, Hye-Yong;Cho, Kyoung-Ik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1101-1104
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    • 2008
  • We have fabricated the transparent TFTs using new oxide material (AZTO: Al-doped zinc tin oxide) as an active layer. The AZTO TFT showed good performance without post-annealing. The electrical characteristics were improved by the post-annealing up to $300^{\circ}C$. The AZTO TFTs exhibited a mobility of $8{\sim}12\;cm^2/Vs$, a sub-threshold swing of 0.2~0.6 V/dec, and an on/off ratio of more than $10^9$.

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