• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.144.1-144
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• 2003

• Korean Journal of Crystallography
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• v.1 no.2
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• pp.115-125
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• 1990

We have investigated bulk and hetero-epitaxial growth of GaAs single crystal. Various growth techniques such as HB, HZM, and VGF for high quality bulk GaAs were successfully developed by appling the specially designed DM(direct monitoring) furnace. Al GaAs/GaAs superlattice structure and In(x)Ga(1-x) As/GaAs epilayers were also grown by MOCVD and VPE, respectively. The characterization of GaAs single crystals and epilayers was made by X-ray diffraction, Hall effect, PL, chemical etching and angle lapping technique.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.131-139
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• 1993

Transmission electron microscopy( lEM) technique which is useful for investigating the crystalline structure and defects, and reflection electron microscopy( REM) of which technique has very high sensitivity of detecting the defects on the crystal surfaces were applied to study the behaviour of dislocations and twins in or on the $a- AI_20_3$ single crystals.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.51-66
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• 1994

Y3Al5O2 and Nd: Y3Al5012 single crystals were grown by Czochralskl technique. The effectt of pulling rate rotation rate, and doping level of Nd3+ ion on the crystal quality were studied Various types of defects were analysed by photo-elastic effect and chemical etching method Finally, spectroscopic and laser poputies of grown crystal were measured. Optirmum pulling rate for good quality was dependant on the doping level of Nd3+ ion. It was found that the suitable pulling rates for pure Y3Al5O12 for 3.0∼3.5 a/o Nd3+ ion doped Y3Al5012 and for more than 40 a/o Nd3+ ion doped Y3Al5012 were 2∼4mm/hr, 0.6∼0.5mm/hr, and less than 0.4mm/hr respectively. Solid-liquid interface was convex at the rotation rate of 27∼60rpm, and concave at the rotation rate of 80∼100rpm. Growth axis was confired to <111> direction and lattice parameter was measured to 12.017A. Core (211) facets,striations, inclusions of metal particles, dislocations and optical inhonngeneities were detected. Four level laser transition of Nd3+ion in YIAls012 single crystal were identified by the spectroscopic measurements. Laser rod with tam diameter and 63mm length was fabricated from grown Nd3+ Y3Al5012 sin91e crystals. 1.8lJ of lasing threshould and 0.49% of soope efficiency were measured by the Pulsed laser action.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.337-343
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• 2000

Prism plane slip {11$\bar{2}$0}1/3{$\bar{1}$120} location velocity in sapphire ($\alpha$-Al$_2$O$_3$) single crystals was measured by etch-pit method. The dislocation velocities were measured as a function of temperature and stress between $1150^{\circ}C$ and $1400^{\circ}C$ for engineering stresses in the range 140 to 250 MPa. The dependence of temperature and stress in dislocation velocity was investigated. The activation energy for dislocation velocity was determined to be 4.2$\pm$0.4 eV. On the other hand, the stress exponent (m) describing the stress dependence of dislocation velocities was in the range of 4.5$\pm$0.8. Through this experiments, it was reconfirmed that the basal plane in sapphire single crystals has the 3-fold symmetry.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.12
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• pp.2279-2286
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• 1992

A hypereutectic Aluminum-Silicon Alloy is widely used in the parts of autombile because of high-resistance and good strength. In this study, the cutting of a hypereutectic Al-Si alloy (A390) for extraction of Si particle was experimentally investigated. By proper selection of cutting tool materials and optimization of cutting conditions, economical machining of this alloy is achieved. The surface roughness relates closely with the feed rate and cutting speed.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1999.06a
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• pp.67-72
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• 1999

Scanning probe Microscope(SPM) such as Scanning Tunneling Microscope(STM) and Atomic Force Microscope(AFM) was shown to be the powerful tool for nano-scale characterization of material surfaces Using this technique, surface morphology of the cyclically deformed Cu or Cu-Al single crystal was observed. The surface became proportionately rough as the number of cycles increased, but after some number of cycles no further change was observed. Slip steps with the heights of 100 to 200 nm and the widths of 1000 to 2000 nm were prevailing at the stage. The slipped distance of one slip system at the surface was not uniform. and formation of the extrusions or intrusions was assumed to occur such place. By comparing the morphological change caused by crystallographic orientation, strain amplitude, number of cycles or stacking fault energy, some interesting results which help to clarify the basic mechanism of fatigue damage were obtained. Furthermore, applicability of the scanning tunneling microscopy to fatigue damage is discussed.

• Journal of the Korean Ceramic Society
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• v.22 no.6
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• pp.42-52
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• 1985

Several $Al_2O_3$-based polycrystalline which had different dopant ratio in the range of 0.5mol% were prepared by doping pure $Cr_2O_3$ $HfO_2$. Single crystalline which had same composition with above polycrystalline were made by means of floating zone method. This study examined the role of each dopant for enhancing the mechanical properties of $Al_2O_3$-based Ceramics. Optical micrographs $({ imes}200)$ of $Al_2O_3-Cr_2O_3$ single crystal showing not only radial crack (rc) on the specimen surface but median crack(mc) and lateral crack(lc) under surface at the edge of indentation mark. Fracture toughness of Al2O3-based Ceramics was increased with $ZrO_2$ content. Alloying effect of $Cr_2O_3$ contributed to the hardness of $Al_2O_3$ based ceramics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.470-474
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• 1999

We have successfully grown <111>-oriented $(La,Sr)(Al,Ta)O_{3}\;(LSAT)$ mixed-perovskite single crystals and <0001>-oriented ${Ca_{8}La_{2}(PO_{4})}_{6}O_2$ (CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they are promising as new substrates for the growth of high quality GaN epitaxial layers.

• Bulletin of the Korean Chemical Society
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• v.27 no.5
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• pp.679-686
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• 2006

The positions of $PbI _2$ molecule synthesized into the molecular-dimensioned cavities of $\mid K_6 (Pb _4I_2)(PbI_2) _{0.67}-(H_2O)_2\mid [Si _{12}Al _{12}O _{48}]$-LTA have been determined. A single crystal of $\mid Pb _6\mid [Si _{12}Al _{12}O _{48}]$-LTA, prepared by the dynamic ion-exchange of $\mid Na _{12}\mid [Si _{12}Al _{12}O _{48}]$-LTA with aqueous 0.05 M $Pb _(NO _3)_2$ and washed with deionized water, was placed in a stream of flowing aqueous 0.05 M KI at 294 K for three days. The resulting crystal structure of the product $( \mid K_6 (Pb _4I_2)(PbI_2) _{0.67}(H_2O)_2\mid [Si _{12}Al _{12}O _{48}]$-LTA, a = 12.353(1) $\AA$) was determined at 294 K by single-crystal X-ray diffraction in the space group Pm3 m. It was refined with all measured reflections to the final error index $R_1$ = 0.062 for 623 reflections which $F_o$ > 4$\sigma$($F_o$). 4.67 $Pb ^{2+}$ and six $K^+$ ions per unit cell are found at three crystallographically distinct positions: 3.67 $Pb ^{2+}$ and three $K^+$ ions on the 3-fold axes opposite six-rings in the large cavity, three $K^+$ ions off the plane of the eight-rings, and the remaining one $Pb ^{2+}$ ion lies opposite four-ring in the large cavity. 0.67 $Pb ^{2+}$ ions and 1.34 $I^-$ ions per unit cell are found in the sodalite units, indicating the formation of a $PbI _2$ molecule in 67% of the sodalite units. Each $PbI _2$ (Pb-I = 3.392(7) $\AA$) is held in place by the coordination of its one $Pb ^{2+}$ ion to the zeolite framework (a $Pb ^{2+}$ cation is 0.74 $\AA$ from a six-ring oxygens) and by the coordination of its two $I^-$ ions to $K^+$ ions through six-rings (I-K = 3.63(4) $\AA$). Two additional $I^-$ ions per unit cell are found opposite a four-ring in the large cavity and form $Pb _2K_2I^{5+}$ and $Pb _2K_2I^{3+}$ moieties, respectively, and two water molecules per unit cell are also found on the 3-fold axes in the large cavity.