• 전기의세계
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• v.25 no.1
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• pp.104-107
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• 1976

The switching characteristics of Non-crystalline As-Te-Si-Ge thin film device using Ag, In and Al metal for electrode, has been investigated. Threshold voltage and holding current of each sandwich type device varied due the to formation of the potential barrier in between non crystalline solid and electrode interface.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.65-67
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• 2005

The Al electrode for OLED was prepared by Facing Targets Sputtering(FTS) system which can reduce the damage of organic layer. The Al thin films were deposited on the cell (Lif/EML/HTL/Bottom electrode : ITO) for examination the current-voltage properties of OLED with magnetic field distribution between two faced targets. Thickness and current-voltage properties of Al thin films are measured by ${\alpha}-step$ and semiconductor parameter analyzer (HP4156A), respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.376-382
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• 2000

We successfully fabricated OLED(Organic Light Emitting Diodes) with Al cathodes electrode deposited by the DC magnetron sputtering. The effects of a controlled Al cathode layer of an Indium Tin Oxide (ITO)/blended single polymer layer (PVK Bu:PBD:dye)/Al light emitting diodes are described. The PVK (Poly(N-vinylcarbazole)) and Bu-PBD (2-(4-biphenyl-phenyl)-1,3,4-oxadiazole) are used hole transport polymer and electron transport molecule respectively. We found that both current injection and electroluminescence output are significantly different with a variable DC sputtering power. The difference is believed to be due to the influence near the blended polymer layer/cathode interface that results from the DC power and H$\sub$2//O in a chamber. And DC sputtering deposition is an effective way to fabricate Al electrodes with pronounced orientational characteristics without damage occurring to metal-organic interface during the sputtering deposition.

• Bulletin of the Korean Chemical Society
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• v.34 no.6
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• pp.1755-1762
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• 2013

A graphene-Zn/Al layered double hydroxide composite film was simultaneously prepared by electrochemical deposition on the surface of a glassy carbon electrode (G-LDH/GCE) from the mixture solution containing GO and nitrate salts of $Zn^{2+}$ and $Al^{3+}$. The modified electrode showed good electrochemical performances toward the simultaneous electrochemical detection of hydroquinone (HQ), catechol (CA) and resorcinol (RE) due to the unique properties of graphene (G) and LDH such as large active surface area, facile electronic transport and high electrocatalytic activity. The redox characteristics of G-LDH/GCE were investigated with cyclic voltammetry and differential pulse voltammetry. The well-separated oxidation peak potentials, corresponding to the oxidation of HQ, CA and RE, were observed at 0.126 V, 0.228 V and 0.620 V respectively. The amperometric response of the modified electrode exhibited that HQ can be detected without interference of CA and RE. Under the optimized conditions, the oxidation peak current of HQ is linear with the concentration of HQ from 6.0 ${\mu}M$ to 325.0 ${\mu}M$ with the detection limit of 0.077 ${\mu}M$ (S/N=3). The modified electrode was successfully applied to the direct determination of HQ in a local tap water, showing reliable recovery data.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.145-147
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• 2005

In present, most of metallic structures(gas pipeline, oil pipeline, water pipeline, etc) are running parallel with subway and power line in seoul. Moreover subway system and power line make a stray current due to electrical corrosion on metallic structures. The owner of metallic structures has a burden of responsibility for the protection of corrosion and the prevention against big accident such as gas explosion or soil pollution and so on. So, they have to measure and analyze the data about P/S(Pipe to Soil) potential due to stray current of subway system. So, we have developed the Real-time Wireless Remote Monitoring System for Stray Current of Subway System. In this system, the permanent buried type reference electrode is necessary. In this paper, results of development of buried type reference electrode using porous ceramic$({\alpha}-Al_{2}O_{3})$ are presented.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2214-2216
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• 2005

This paper is researched discharge and ozone generation characteristics of ozonizer using $Al_2O_3$ Ceramic dielectric. The discharge characteristics with variation of the discharge electrode area is studied. The characteristics of ozone concentration. ozone generation and ozone yield were measured to discharge power, discharge electrode area and supplied gas flux for oxygen and air. The solubility of ozone for water concentrations and ozone generations proportional to discharge power and discharge electrode area. Ozone yield has slowly increase with Increasing discharge power at high flow-rate. As the result, the maximum values of ozone characteristics ozone generation and ozone yield, can be obtained 5817[ppm] and 36[g/kWh]. We make enough the ozone concentration as the air in the home. An electric discharge electrode area is apt to shrink gradually into a miniaturization trend of the ozonizer but the enlargement of the occurrence flight of the electric discharge area gives the characteristic enhance the aid in the identity condition through the structure improvement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.56-59
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• 1997

SAW filters of transversal type were fabricated on some piezoelectric substrates of the LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$Y-X, Quartz ST-cut wafers through the simulation in which the number o: IDT and window function were changed for the required frequency, and the mask making. Their IDT spacing and width were 3 ${\mu}{\textrm}{m}$, chip size was 4.462 $\times$ 2.086 mm$^2$, and they had double electrode transversal type IDTs. In addition to pure Al electrode devices, Ti thin films having the different thicknesses was introduced between the Al electrode and the substrate for improving the power resistance strength. They had 11-12 dB insertion losses similar to those of pure Al electrode SAW filters in case of LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$ Y-X, meaning that Ti thin film was not detrimental to the insertion loss and general frequency properties. The filters had the center frequencies 162MHz for LN 128$^{\circ}$ Y-X, 186MHz for 64$^{\circ}$ Y-X, and 131MHz for Quartz ST-cut substrates.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.19-25
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• 2008

In this study, we fabricated Organic Thin Film Transistors(OTFTs) with $C_{60}$ hole injection layer between organic semiconductor(pentacene) and metal electrode, and we compared the electrical characteristics of OTFTs with/without $C_{60}$. When the $C_{60}$ hole injection layer was introduced, the mobility and the threshold voltage were improved from 0.298 $cm^2/V{\cdot}s$ and -13.3V to 0.452 $cm^2/V{\cdot}s$ and -10.8V, and the contact resistance was also reduced. When the $C_{60}$ is inserted, the hole injection was enhanced because the $C_{60}$ prevent the unwanted chemical reaction between pentacene and Au. Furthermore, we fabricated the OTFTs using Al as their electrodes. When the OTFTs were made by only aluminum electrode, the channel were not mostly made because of the high hole injection barrier between pentacene and aluminum, but when the $C_{60}$ layer with an optimal thickness was applied between aluminum and pentacene, the device performances were obviously enhanced because of the vacuum energy level shift of Al and the consequent decrease of the hole injection barrier which was induced by the interface dipole formation between $C_{60}$ and Al. The mobility and $I_{ON}/I_{OFF}$ current ratio of OTFT with $C_{60}/Al$ electrode were 0.165 $cm^2/V{\cdot}s$ and $1.4{\times}10^4$ which were comparable with the normal Au electrode OTFT.

• Journal of Hydrogen and New Energy
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• v.7 no.1
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• pp.63-69
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• 1996

Effect of nickel powder to added to the hydrogen absorbing alloy electrode of $MmNi_{4.5}-xCoxMn_{0.3}Al_{0.2}$ system alloy was investigated. The addition of nickel powder was effective for the improvement of discharging characteristic. It was found that the discharge capacity was 310mAhig when the alloy negative electrode was mixed $MmNi_{3.75}CO_{0.75}Mn_{0.3}Al_{0.2}$ and nickel powder with a mix of one to three. Still another, we have investigated thermodynamic stability of hydrogen in the alloy negative electrode. As a result, enthalpy of hydrogen and hydrogen equilibrium pressure in the alloy negative electrode were a suitable value to easy hydrogen absorption-desorption.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1297-1299
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• 1998

LB layers of L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multilayers was determined by ellipsometry. It was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitance and low leakage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLS capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.