• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.58-61
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• 2002

Photoluminescence up-conversion in semiconductor heterostructures is a phenomenon in which luminescence occurs at energies higher than that of the excitation photons. It has been observed in many semiconductor heterostructure systems, including InP/AnALAs, CdTe/CdMgTe, GaAs/ordered-(Al)GalnP, GaAs/AIGaAs, and InAs/GaAs. In this wort, GaAs/AIGaAs heterostructures are used as a model system to study the mechanism of the up-conversion process. This system is ideal for testing different models because the band offsets are quite well documented. Different heterostructures are designed to study the effect of disorder on the up-converted luminescence efficiency. In order to study the roles of different types of carriers, the effect of doping was investigated. It was found that the up-converted luminescence is significantly enhanced by p-type doping of the higher-band-gap material.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.37-40
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• 2002

We have been fabricated the white organic electroluminescent devices using vacuum evaporation method. The structure of the white OELD is Glass/1T0/NPB/DPVBi/AI $q_{3:}$ Ru bren e/B CP/Alq $q_3$/Al. We have got the white emission with two-wavelength that is mixing blue emission in DPVBi layer and orange emission in Al $q_{3:}$Rubrene layer by varying tile doping concentrations of Rubrene and the thickness of NPB layer.yer.

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.41-41
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.224-224
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• 2016

Many researchers have been tried to improve the performance of the phosphorescent organic light-emitting diode(PHOLED) by controlling of the dopant profile in the emission layer. In this work, as shown in Fig. 1 insert, a typical red PHOLED device which has the structure of ITO/NPB(50nm)/CBP(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) is fabricated with a 5nm thick doping section in the emission layer. The doping section is formed by co-deposition of CBP and Ir(btp)2acac with a doping concentration of 8%, and it's location(x) is changed from HTL/EML interface to EML/HBL in 5nm steps. The current efficiency versus current density of the devices are shown in Fig. 1. By changing the location of doping section, as shown in Fig. 1 and 2, at x=5nm, the efficiency shows the maximum of 3.1 cd/A at 0.5 mA/cm2 and it is slightly decreased when the section is closed to HTL and slightly increased when the section is closed to HBL. If the doping section is closed to HTL(NPB) the excitons can be quenched easily to NPB's triplet state energy level(2.5eV) which is relatively lower than that of CBP(2.6eV). Because there is a hole accumulation at EML/HBL interface the efficiency can be increased slightly when the section is closed to HBL. Even the thickness of the doping section is only 5nm,. the maximum efficiency of 3.1 cd/A with x=5 is closed to that of the homogeneously doped device, 3.3 cd/A, because the diffusion length of the excitons is relatively long. As a result, we confirm that the current efficiency of the PHOLED can be improved by the doping profile optimization such as partially, not homogeneously, doped EML structure.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.526-531
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• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.47.1-47.1
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• 2007

• ETRI Journal
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• v.24 no.4
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• pp.270-279
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• 2002

We present a self-consistent numerical method for calculating the conduction-band profile and subband structure of AlGaN/GaN single heterojunctions. The subband calculations take into account the piezoelectric and spontaneous polarization effect and the Hartree and exchange-correlation interaction. We calculate the dependence of electron sheet concentration and subband energies on various structural parameters, such as the width and Al mole fraction of AlGaN, the density of donor impurities in AlGaN, and the density of acceptor impurities in GaN, as well as the electron temperature. The electron sheet concentration was sensitively dependent on the Al mole fraction and width of the AlGaN layer and the doping density of donor impurities in the AlGaN. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1416-1418
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• 2005

A new DCM derivative containing a phenothiazine moiety, 4-(dicyanomethylene)-2-t-butyl-6-(9-ethylphenothiazine-2- enyl)-4H-pyran (DCPTZ), has been synthesized as an orange-red fluorescent dye molecule for organic lightemitting diodes (OLEDs). EL devices with the structure of $ITO/PEDOT-PSS/{\alpha}-NPD/Alq_3:DCPTZ/Alq_3/LiF/Al$ have been fabricated with changing the doping concentration of the DCPTZ. Maximum EL spectra of the devices ranged from $580{\sim}620$ nm depending on the doping concentration of the dye molecule. An EL device with 0.5 % doping concentration showed CIE coordinate (0.51, 0.47) at luminance of 100 $cd/m^2$. White light-emitting devices with the structure of $ITO/PEDOT-PSS/{\alpha}-NPD/{\alpha}-NPD:DCPTZ/DPVBi/Alq_3/$ LiF/Al have been also fabricated. The thickness of blue light-emitting 1,4-bis(2,2- diphenylvinyl)benzene (DPVBi) layer was changed to obtain a white light-emission. A white light-emission from the device was observed when the thickness of the DPVBi layer became thicker than 10 nm.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.24-27
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• 2014

In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of $ZnO_xS_{1-x}$ resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/$ZnO_xS_{1-x}$/Au and Al/$ZnO_xS_{1-x}$/Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the $ZnO_xS_{1-x}$ devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/$ZnO_xS_{1-x}$/Cu device, the ratio of the HRS to LRS is above $10^6$, and the memory characteristics are maintained for $10^4$ sec, which values are comparable to those of ReRAM devices on Si or glass substrates.

• Korean Journal of Materials Research
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• v.32 no.4
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• pp.210-215
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• 2022

Extensive research is being carried out on Ni-rich Li(Ni_xCo_yMn_1-x-y)O₂ (NCM) due to the growing demand for electric vehicles and reduced cost. In particular, Ni-rich Li(Ni_xCo_yMn_1-x-y-zAl_z)O₂ (NCMA) is attracting great attention as a promising candidate for the rapid development of Co-free but electrochemically more stable cathodes. Al, an inactive element in the structure, helps to improve structural stability and is also used as a doping element to improve cycle capability in Ni-rich NCM. In this study, NCMA was successfully synthesized with the desired composition by direct coprecipitation. Boron and tin were also used as dopants to improve the battery performance. Macro- and microstructures in the cathodes were examined by microscopy and X-ray diffraction. While Sn was not successfully doped into NCMA, boron could be doped into NCMA, leading to changes in its physicochemical properties. NCMA doped with boron revealed substantially improved electrochemical properties in terms of capacity retention and rate capability compared to the undoped NCMA.