• Toxicological Research
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• v.14 no.2
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• pp.163-169
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• 1998

Fluoride (F), over a narrow concentration range, increases bone formation. Aluminum (Ai) too is biphasic in its action on bone, being mitogenic at very low levels and inhibitory at higher levels. Both F and Al are present in finished drinking water where the chemical interaction of these two agents is well characterized. F and AI, given individually, accumulate preferentially in bone. In addition. in vivo studies have shown that F causes the co-accumulation of Al in bone. Thus, it was necessary to determine the interactive effect of these two agents on bone mitogenesis. Calvaria were obtained from neonatal CD-1 mice and cultured with various concentrations of F (0.05~19 ppm) as NaF, Al (2 ppb~2 ppm) as $AlCl_3$ , or F and Al for 3 days at $37^{\circ}C$ on a rotating roller drum. Alkaline phosphatase activity in calvaria and $\beta$-glucuronidase activity in culture medium were determined as a measures of bone turnover. Alkaline phosphatase activity in calvaria was significantly increased by F (0.05~2 ppm) treatment and $\beta$-glucuronidase activity was slightly increased in the culture medium of calvaria treated with 0.3 ppm Al. The combination of 19 ppm F and 0.3 ppm Al increased alkaline phosphatase activity in calvaria, but did not affect $\beta$-glucuronidase activity, suggesting the interactive effect of fluoride and aluminum on bone turnover.

• Journal of the Korean Chemical Society
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• v.13 no.2
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• pp.149-156
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• 1969

$NaAl(OH)_2CO_3$was synthesized using colloidal earth (Allophane) as the starting material and some of its were studied in detail. It was found that Dawsonite was formed in the pH range (pH 12.5~12.0) that the concentration of $HCO_3^-$ was just begun to increase and the presence of $HCO_3^-$ in the product was clarified from the infrared absorption spectrum. The chemical formular of Dawsonite was therefore presumed as $NaAlO (OH) HCO_3$. From toahhe results of X-ray powder diffraction, both peaks at 5.7 $\AA$ and 2.8 $\AA$ were observed, and fibrous crystalline structure was observed from electron micrograph and also found from the microscopic electron diffraction at 5.7 $\AA.$ Therefore the fibrous axis was considered as =Al=O2=Al=O2=Al=(*image) direction. True specific gravity of Dawsonite was 2.44 and its porosity was 91.4%. It was practically insoluble in water, but decomposed in the boiling water to form Pseudo Boehmite. Stable pH range of Dawsonite was about 4.5~11.5. From the results of D.T.A. and T.G.A., it was observed that $CO_2$was liberated at $350^{\circ}C$, and $H_2O$ at $650^{\circ}C$, and converted into strongly hygroscopic $NaAlO_2$, which was easily decomposed in water into $\beta-Al(OH)_3(Bayerite)$ and NaOH.

• Transactions of the Korean hydrogen and new energy society
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• v.26 no.6
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• pp.532-540
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• 2015

Electrochemical alane ($AlH_3$) production process can be provided as a synthesis route which close a reversible cycle. In this study, growth inhibition of dendrite as key issues in this process was investigated. Main cause of dendrite growth was because Al fine powder separated in consumption process of Al electrode was moved to Pd electrode. In an effort to avoid this, use of glass block with uniform holes was the most effective to inhibit the amount of dendrite to that of $AlH_3$. Furthermore, effects of Al electrode (anode) type and electrolyte concentration were investigated and the optimal condition for inhibiting dendrite formation was proposed.

• Progress in Superconductivity
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• v.9 no.2
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• pp.183-187
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• 2008

We have studied superconducting properties of $Mg_{1-x}Al_xB_2$ single crystals from reversible magnetization measurements. It was found that the upper critical fields $H_{c2}$ were decreased for both H // c and H // ab as Al is substituted for Mg. As a result, the large anisotropy of $H_{c2}$ observed in pure $MgB_2$, which is considered as one of the characteristics of two-gap superconductor, was decreased with Al doping. On the other hand, the irreversibility fields $H_{irr}$ were increased for x = 0.1 and were significantly decreased for x = 0.2. In contrary to the anisotropy of $H_{c2}$, the anisotropy of $H_{irr}$ was increased as Al concentration increases.

• Journal of the Korean institute of surface engineering
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• v.39 no.5
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• pp.235-239
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• 2006

The aluminum nitride(AlN) layer on Al7075 substrate has been formed through nitrogen ion implantation process. The implantation process was performed under the conditions : 100 keV energy, total ion dose up to $2{\times}10^{18}\;ions/cm^2$. XRD analysis showed that aluminum nitride layers were formed by nitrogen implantation. The formation of Aluminum nitride enhanced surface hardness up to 265HK(0.02 N) from 150HK(0.02 N) for the unimplanted specimen. Micro-Knoop hardness test showed that wear resistance was improved about 2 times for nitrogen implanted specimens above $5\;{\times}\;10^{17}\;ions/cm^2$. The friction coefficient was measured by Ball-on-disc type wear tester and was decreased to 1/3 with increasing total nitrogen ion dose up to $1\;{\times}\;10^{18}ions/cm^2$. The enhancement of mechanical properties was observed to be closely associated with AlN formation. AES analysis showed that the maximum concentration of nitrogen increased as ion dose increased until $5\;{\times}\;10^{17}\;ions/cm^2$.

• Journal of the Korean Ceramic Society
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• v.48 no.3
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• pp.241-245
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• 2011

A red strontium aluminate phosphor ($Sr_3Al_2O_6:Eu^{3+},Eu^{2+}$) is synthesized using a solid state reaction method in air and reducing atmosphere. The investigation of firing temperature indicates that a single phase of $Sr_3Al_2O_6$ is formed when the firing temperature is higher than $1300^{\circ}C$. The effect of firing temperature and doping concentration on luminescent properties are investigated. $Sr_3Al_2O_6$ phosphor exhibits the typical red luminescent properties of $Eu^{3+}$ and $Eu^{2+}$.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3723-3729
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• 2010

We investigated the high-excitation voltage cathodoluminescence (CL) performance of blue light-emitting (ZnS:Ag,Al,Cl) and green light-emitting (ZnS:Cu,Al) phosphors coated with metal oxides ($SiO_2$, $Al_2O_3$, and MgO). Hydrolysis of the metal oxide precursors tetraethoxysilane, aluminum isopropoxide, and magnesium nitrate, with subsequent heat annealing at $400^{\circ}C$, produced $SiO_2$ nanoparticles, an $Al_2O_3$ thin film, and MgO scale-type film, respectively, on the surface of the phosphors. Effects of the phosphor surface coatings on CL intensities and aging behavior of the phosphors were assessed using an accelerating voltage of 12 kV. The MgO thick film coverage exhibited less reduction in initial CL intensity and was most effective in improving aging degradation. Phosphors treated with a low concentration of magnesium nitrate maintained their initial CL intensities without aging degradation for 2000 s. In contrast, the $SiO_2$ and the $Al_2O_3$ coverages were ineffective in improving aging degradation.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.33-38
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• 1997

The green emitting phosphors of the Field Emission Display(FED), Al codoped ZnGa$_{2}$O$_{4}$:Mn, were synthesized and sintered at high temperature. From X-ray diffraction measurements, it was confirmed that poly crystalline ZnGa$_{2}$O$_{4}$ and ZnAI$_{2}$O$_{4}$ solid solution coexist in Al codoped ZnGa$_{2}$O$_{4}$:Mn. Photoluminescence spectra of Al codoped ZnGa$_{2}$O$_{4}$:Mn show that the main peak position is shifted from 504 nm to 513 nm with the increase of Al concentration. The brightness was improved with the amount of Al dopant. It showed the maximum value at the doping level of 0.03 mole and then, it degraded rapidly. These results are due to the superposition of emission from . ZnGa$_{2}$O$_{4}$:Mn and ZnAI$_{2}$O$_{4}$:Mn.

• Nuclear Engineering and Technology
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• v.53 no.9
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• pp.3058-3067
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• 2021

Sodium zinc borate glasses doped with dysprosium and modified with different concentrations of barium oxide (0-50 mol %) were fabricated using the melting quenching technique. The structural properties of the prepared glass systems were characterized using XRD and FTIR methods. The absorption spectra of the prepared glasses were measured to determine their energy gap and their related optical properties. The density of the glasses and other physical parameters were also reported. Additionally, with the help of Photon Shielding and Dosimetry (PSD) software, we investigated the radiation shielding parameters of the prepared glass systems at different energy values. It was found that an increase in the density of the glasses by increasing the concentration of BaO significantly improved the gamma ray shielding ability of the samples. For practical results, a compatible irradiation set up was designed to check the shielding capability of the obtained glasses using a gamma ray source at 662 keV. The experimentally obtained results strongly agreed with the data obtained by PDS software at the same energy. These results demonstrated that the investigated glass system is a good candidate for several radiation shielding applications when comparing it with other commercial shielding glasses and concretes.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.