• 한국재료학회지
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• 제16권2호
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• pp.129-136
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• 2006

In order to get basic information on the reference electrode material for the long life Al concentration sensor in zinc galvanizing melt, the workability and stability of fluorine potential cell with $CaF_2$ single crystal electrolyte were examined carefully at constant temperature for six kinds of reference materials (Zn, Sn, Cd, Bi, Pb, Al-Sn alloy + fluorides). Good workability and stability of the sensor were found in sensor with $Bi+BiF_3$ reference electrode. The Al sensor with $Bi+BiF_3$ reference electrode was assembled and was tested in Zn-Al melt with different Al concentration. The EMF was changed rapidly with the change of Al concentration and was stabilized in a short time. Thus the response of EMF was satisfactory for $CaF_2$ sensor. The correlationship between EMF from the sensor and logarithm of Al concentration has been derived from the least square regression method. E/mV=57.515log[wt% Al]+1883.3 R=0.9717 ($0.013{\leq}[wt% Al]{\leq}0.984$) The EMF from Al sensor was increased linearly against logarithm of [wt% Al]. The fluorine potential of Zn-Al melt was also calculated to be in the range of $10^{-60}{\sim}10^{-61}$ Pa for the present experiemental condition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.125-129
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• 2021

We investigated the electronic property and atomic structure for chalcopyrite (CH) Al_xGa_1-xAs semiconductor by using first-principles FPLMTO method. The CH-Al_xGa_1-xAs exhibits a p-type semiconductor with a direct band-gap. For low Al concentration unoccupied hole-carriers are induced, but for high Al concentration it is formed a localized bonding or anti-bonding state below Fermi level. The hybridization of Al(3s)-Ga(4s, or 4p) is larger than that of Al(3s)-As(4s, or 4p). And the Al film on As-terminated surface, Al/AsGa(001), is more energetically favorable one than that on Ga-terminated (001) surface. Consequently, the band-gap of CH-Al_xGa_1-xAs system increases exponentially with increasing Al concentration. The change of lattice parameter is shown two different configurations with increasing Al concentration. The calculated lattice parameters for CH-Al_xGa_1-xAs system are compared to the experimental ones of zinc-blend GaAs and AlAs.

• Interaction and multiscale mechanics
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• 제6권2호
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• pp.127-136
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• 2013

In this study, atomistic simulations are performed to study the effect of Al solute on the behaviour of edge dislocation in Mg alloys. After the dissociation of an Mg basal edge dislocation into two Shockley partials using molecular mechanics, the interaction between the dislocation and Al solute at different temperatures is studied using molecular dynamics. It appears from the simulations that the critical shear stress increases with the Al solute concentration. Comparing with the solute effect at T = 0 K, however, the critical shear stress at a finite temperature is lower since the kinetic energy of the atoms can help the dislocation conquer the energy barriers created by the Al atoms. The velocity of the edge dislocation decreases as the Al concentration increases when the external shear stress is relatively small regardless of temperature. The Al concentration effect on the dislocation velocity is not significant at very high shear stress level when the solute concentration is below 4.0 at%. Drag coefficient B increases with the Al concentration when the stress to temperature ratio is below 0.3 MPa/K, although the effect is more significant at low temperatures.

• The Korean Journal of Ecology
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• 제22권5호
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• pp.295-298
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• 1999

산림지역의 강우분석에 의한 중금속 농도를 분석한 결과, Al의 수종별 농도는 공단지역의 해송림이 상수리나무림보다 1.3배 높았고, 도시지역은 해송림이 2.1배 높았다. 공단지역과 도시지역 수간류의 Al 농도는 수관통과우와 임외우 보다 각각 2.3배와 192.5배, 4.8배와 55배 높은 농도였고, 임외우는 두 지역에서 같은 농도로 낮았다. Mn의 농도는 수종별 농도는 도시지역의 해송림이 1,4배 높았다. Mn의 강우별 농도는 수간류가 수관통과우 보다 6.1배 높았고, 임외우 보다 121배 높은 농도였다. 강우의 계절별 농도를 분석한 결과에서 Al은 공단지역에서 12월의 강우가 가장 높았고, 다음으로 3월, 6월, 8월 순으로 분석되었지만, 도시지역은 계절별 뚜렷한 변화가 없었다. 지역별 중금속의 농도는 공단지역에서 Al>Mn>Ni의 순이었고, 도시지역은 Mn>Al>Ni의 순으로 조사되었다.

• 반도체디스플레이기술학회지
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• 제3권2호
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• pp.17-21
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• 2004

Aluminum nitride(AlN) thin films were deposited on silicon substrate by reactive RF magnetron sputtering without substrate heating. We investigated the dependence of some properties for AlN thin film on sputtering conditions such as working pressure, $N_2$ concentration and RF power. XRD, Ellipsometer and AES has been measured to find out structural properties and preferred orientation of AlN thin films. Deposition rate of AlN thin film was increased with an increase of RF power and decreased with an increase of $N_2$ concentration. AES in-depth measurements showed that stoichiometry of Aluminium and Nitrogen elements were not affected by $N_2$ concentration. It has shown that low working pressure, low $N_2$ concentration and high RF power should be maintained to deposit AlN thin film with a high degree of (0002) preferred orientation.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2017년도 제48회 춘계학술대회논문집
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• pp.617-621
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• 2017

본 연구에서는 Al 입자가 함유된 고폭약의 성능 특성을 2 상 모델(two-phase model)을 이용하여 수치 해석을 수행하였다. Al 입자의 점화와 연소시간은 고폭약에 비해 상대적으로 긴 시간이 요구되기 때문에, Al 입자연소에 의한 에너지 발산은 고폭약의 데토네이션 후방에서 이루어진다. Al 입자를 함유하는 고폭약은 Al 함유량이 증가함에 따라 데토네이션 속도의 감소와 고폭약 데토네이션 후방에서 Al 입자 연소가 일어나며 이중 데토네이션이 관찰되는 특징이 있다. 본 연구에서는 Al 입자가 함유된 HMX의 데토네이션 특성을 재현하기 위해 최대 Al 함유량 50%를 갖는 confined rate stick이 고려되었으며, 수치해석 결과는 5-25% 함유량에 대한 실험결과와 비교되었다.

• Fisheries and Aquatic Sciences
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• 제14권4호
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• pp.355-361
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• 2011

Effects of aluminum (Al) on plasma vitellogenin (VTG), alkaline-labile phosphorus (ALPP), calcium (Ca), glutamate pyruvate transaminase (GPT), the hepatosomatic index (HSI), and hepatic Al concentration were examined in estradiol-$17{\beta}$ ($E_2$)-administered immature rockfish Sebastes schlegeli. Fish were injected intraperitoneally with $E_2$ (5 mg/kg body weight [BW]) and/or Al (0, 0.1, 1, 5, and 10 mg/kg BW) and plasma and liver samples were extracted 7 days later. After sodium dodecyl sulfate polyacrylamide gel electrophoresis, the relative amount of VTG was determined by integrated optical density. VTG accounted for 23.6% of the total proteins in the control group, but this value decreased with increasing Al administration. Al reduced the concentrations of ALPP and Ca in a concentration-dependent manner and significant reduction occurred at Al concentrations greater than 5 mg/kg. The concentration of GPT increased in a concentration-dependent manner in all Al-administered rockfish. The concentrations of Al in the liver also increased, and HSI was decreased, in a concentration-dependent manner. These results suggest that Al inhibits $E_2$-induced VTG production by being toxic to hepatocytes in marine fish.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2011년도 정기총회 및 추계학술대회 논문집
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• pp.138-141
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• 2011

Carbon dioxide concentration of railroad passenger cabin is obliged to be kept lower than guideline values of 'Indoor air quality guideline for public transportations', but actual carbon dioxide concentration frequently exceeds this guideline value during the morning and evening rush hours. For improving comfortability and satisfaction of passengers, concentration control method using $Al_2O_3$ adsorbents was presented. The adsorbent is made from $Al_2O_3$ and LiOH. $Al_2O_3$ perform as a frame and LiOH as a chemical adsorbent. The adsorbent performance experiment was carried out by measuring concentration change of Carbon dioxide in terms of flow, initial concentration and amount of adsorbent. It is expexted that the obtained results will be used to lower carbon dioxide concentration of railroad passenger cabin.

• ETRI Journal
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• 제24권4호
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• pp.270-279
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• 2002

We present a self-consistent numerical method for calculating the conduction-band profile and subband structure of AlGaN/GaN single heterojunctions. The subband calculations take into account the piezoelectric and spontaneous polarization effect and the Hartree and exchange-correlation interaction. We calculate the dependence of electron sheet concentration and subband energies on various structural parameters, such as the width and Al mole fraction of AlGaN, the density of donor impurities in AlGaN, and the density of acceptor impurities in GaN, as well as the electron temperature. The electron sheet concentration was sensitively dependent on the Al mole fraction and width of the AlGaN layer and the doping density of donor impurities in the AlGaN. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.