• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.129.2-129.2
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• 2007

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.322-322
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• 2015

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.150-151
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• 2004

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

• Transactions of the Korean hydrogen and new energy society
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• v.19 no.6
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• pp.545-551
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• 2008

Fe/$Al_2O_3$ composite granules were prepared by combining sol-gel/oil drop method. The shape of granules were mainly determined by composition and concentration of aluminum precursor. The composite granule with the lowest aluminum concentration was synthesized with 0.75M boehmite solution. The prepared granules were tested as a catalyst in the plug-flow reactor for Fischer-Tropsch synthesis. Before the reaction, catalysts were activated by hydrogen reduction and synthesis gas treatment. The activation conditions and aluminum concentration have affected catalytic performance significantly.

• Journal of the Korean Chemical Society
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• v.13 no.2
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• pp.157-164
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• 1969

Aoolphane was treated with 30% Hydrochloric acid at $18^{\circ}C$ for two hows with stirring in order to obtain the insoluble form of SiO2 gel and to extract quantitatively both $Al_2O_3$as and $Fe_2O_3AlCl_3{\cdot}6H_2O Fe$ and $Cl_3{\cdot}6H_2O$ forms, respectively, at the same time. $SiO_2$ gel was filtered and to the filterate Ammonia was added to precipitate $Al(OH)_3[Fe(OH)_3 Contaminated ]$ The precipitate was separated by filteration and the filterate was recovered as the form of $NH_4Cl$. The precipitate was treated with 200g (NaOH)/l Concentration of NaOH a little excessively to the equivalent at $65~70^{\circ}C$ as $Fe(OH)_3$ formed was insoluble, it was filtered of and to the filterate containing $NaAl(OH)_4(OH_2)_2$Carbon dioxide gas was bubbled at $50^{\circ}C~90^{\circ}C$ to obtain the precipitate with excellent filterability and crystallinity. The product was certified to be Dawsonite $(NaAl(OH)_2CO_3)$ by X-Ray diffraction analysis at below $40^{\circ}C$, when $CO_2$ gas was bubbled into the relatively lower concentration of $NaAl(OH)_4(OH_2)_2$ solution, the precipitate of very fine particles was formed, which was hard to filter and with the Composition of $\alpha-Al_2O_3-H_2O$ (Boehmite).

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.518-520
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• 2005

Effects of the $O_2/Ar$ flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the $O_2/Ar$ flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the $O_2/Ar$ flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the $O_2/Ar$ flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the $O_2/Ar$ flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the $O_2/Ar$ flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the $O_2/Ar$ flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the $O_2/Ar$ flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum $O_2/Ar$ flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

• Journal of Welding and Joining
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• v.31 no.6
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• pp.96-106
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• 2013

In this study, the effect of laser source($CO_2$ and Nd:YAG) on the microstructure and tensile properties of laser welded Al-Si coated boron steel(1.2mmt) was investigated with before and after hot-stamping. In case of as welds condition, fracture occurred in base metal unrelated to the laser source. It could be explained that tensile strength of fusion zone composed of martensite and bainite is higher than that of base metal that contains a lot of ferrite despite dilution of Al and Si from coating layer to fusion zone. In case of hot-stamping condition, the fracture occurred in fusion zone irrelevant to laser source and the tensile strength was lower than hot stamped base metal. In the $CO_2$ laser welds, $Fe_3$(Al,Si) formed near the bond line was transformed into ferrite during hot-stamping. Therefore tensile strength of bond line is lower than that of base metal and center of fusion zone and the fracture occurred in the bond line. On the other hand, in the Nd:YAG laser welds, the higher concentration of Al formed the ferrite in the fusion zone during hot-stamping treatment. Also, the thickness of centerline was thinner than that of base metal. Therefore, it is considered that fracture occurred in centerline of fusion zone due to effect of concentration stress, and it leaded to a lower tensile strength and elongation.

• KEPCO Journal on Electric Power and Energy
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• v.5 no.1
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• pp.39-43
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• 2019

Hydrogen energy has positive effects as an alternative energy source to overcome the energy shortage issues. On the other hand, since stability is very important in use, sensor technology that enables accurate and rapid detection of hydrogen gas is highly required. In this study, hydrogen sensor was developed on AlGaN/GaN heterostructure platform using Pd catalyst where a recess structure was employed to improve the sensitivity. Temperature and bias voltage dependencies on sensitivity were carefully investigated using a hydrogen concentration of 4% that is the safety threshold concentration. Due to the excellent properties of AlGaN/GaN heterostructure in conjunction with the recess structure, a very high sensitivity of 56% was achieved with a fast response speed of 0.75 sec.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.3-3
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• 2001

Recently TiN, TiAlN, CrN hardcoatings have adapted many industrial application such as die, mold and cutting tools because of good wear resistant and thermal stability. However, in terms of high speed process, general hard coatings have been limited by oxidation and thermal hardness drop. Especially in the case of PCB drill, high speed cutting and without lubricant process condition have not adapted these coatings until now. Therefore more recently, superhard nanocomposite coating which have superhard and good thermal stability have developed. In previous works, WC-TiAlN new nanocomposite film was investigated by cathodic arc ion plating system. Control of AI concentration, WC-TiAlN multi layer composite coating with controlled microstructure was carried out and provides additional enhancement of mechanical properties as well as oxidation resistance at elevated temperature. It is noted that microhardness ofWC-TiA1N multi layer composite coating increased up to 50 Gpa and got thermal stability about $900^{\circ}C$. In this study WC-TiAlN nanocomposite coating was deposited on PCB drill for enhancement of life time. The parameter was A1 concentration and plasma cleaning time for edge sharpness maintaining. The characteristic of WC-TiAlN film formation and wear behaviors are discussed with data from AlES, XRD, EDS and SEM analysis. Through field test, enhancement of life time for PCB drill was measured.