• Korean Journal of Materials Research
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• v.16 no.2
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• pp.129-136
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• 2006

In order to get basic information on the reference electrode material for the long life Al concentration sensor in zinc galvanizing melt, the workability and stability of fluorine potential cell with $CaF_2$ single crystal electrolyte were examined carefully at constant temperature for six kinds of reference materials (Zn, Sn, Cd, Bi, Pb, Al-Sn alloy + fluorides). Good workability and stability of the sensor were found in sensor with $Bi+BiF_3$ reference electrode. The Al sensor with $Bi+BiF_3$ reference electrode was assembled and was tested in Zn-Al melt with different Al concentration. The EMF was changed rapidly with the change of Al concentration and was stabilized in a short time. Thus the response of EMF was satisfactory for $CaF_2$ sensor. The correlationship between EMF from the sensor and logarithm of Al concentration has been derived from the least square regression method. E/mV=57.515log[wt% Al]+1883.3 R=0.9717 ($0.013{\leq}[wt% Al]{\leq}0.984$) The EMF from Al sensor was increased linearly against logarithm of [wt% Al]. The fluorine potential of Zn-Al melt was also calculated to be in the range of $10^{-60}{\sim}10^{-61}$ Pa for the present experiemental condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.125-129
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• 2021

We investigated the electronic property and atomic structure for chalcopyrite (CH) Al_xGa_1-xAs semiconductor by using first-principles FPLMTO method. The CH-Al_xGa_1-xAs exhibits a p-type semiconductor with a direct band-gap. For low Al concentration unoccupied hole-carriers are induced, but for high Al concentration it is formed a localized bonding or anti-bonding state below Fermi level. The hybridization of Al(3s)-Ga(4s, or 4p) is larger than that of Al(3s)-As(4s, or 4p). And the Al film on As-terminated surface, Al/AsGa(001), is more energetically favorable one than that on Ga-terminated (001) surface. Consequently, the band-gap of CH-Al_xGa_1-xAs system increases exponentially with increasing Al concentration. The change of lattice parameter is shown two different configurations with increasing Al concentration. The calculated lattice parameters for CH-Al_xGa_1-xAs system are compared to the experimental ones of zinc-blend GaAs and AlAs.

• Interaction and multiscale mechanics
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• v.6 no.2
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• pp.127-136
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• 2013

In this study, atomistic simulations are performed to study the effect of Al solute on the behaviour of edge dislocation in Mg alloys. After the dissociation of an Mg basal edge dislocation into two Shockley partials using molecular mechanics, the interaction between the dislocation and Al solute at different temperatures is studied using molecular dynamics. It appears from the simulations that the critical shear stress increases with the Al solute concentration. Comparing with the solute effect at T = 0 K, however, the critical shear stress at a finite temperature is lower since the kinetic energy of the atoms can help the dislocation conquer the energy barriers created by the Al atoms. The velocity of the edge dislocation decreases as the Al concentration increases when the external shear stress is relatively small regardless of temperature. The Al concentration effect on the dislocation velocity is not significant at very high shear stress level when the solute concentration is below 4.0 at%. Drag coefficient B increases with the Al concentration when the stress to temperature ratio is below 0.3 MPa/K, although the effect is more significant at low temperatures.

• The Korean Journal of Ecology
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• v.22 no.5
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• pp.295-298
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• 1999

This study was carried out to investigate the changes in concentration of heavy metals in throughfall, stemflow and rainfall at the survey area. The Al concentration of Pinus thunbergii forest was 1.3 times higher than those of Quercus acutissima forest at industrial area, and 2.1 times higher at urban area. The Al concentration of stemflow was 2.3 times and 113 times, 4.8 times and 55 times, respectively, higher than those of throughfall, and rainfall at both industrial and urban area. The Al concentration of rainfall was lower at industrial and urban area. The Mn concentration of Pinus thunbergii forest was 2.4 times higher than those of Quercus acutissima forest at urban area. Heavy metal concentrations in rain water were the higher in stemflow, and in the order of throughfall and rainfall. Seasonal changes of heavy metal concentration were the highest on December at industrial area, and were higher in the order of March>June>August. Seasonal changes were not remarkable at urban area. Heavy metal concentrations were higher in the order of Al>Mn>Ni at industrial area, and Mn>Al>Ni at urban area.

• Journal of the Semiconductor & Display Technology
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• v.3 no.2
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• pp.17-21
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• 2004

Aluminum nitride(AlN) thin films were deposited on silicon substrate by reactive RF magnetron sputtering without substrate heating. We investigated the dependence of some properties for AlN thin film on sputtering conditions such as working pressure, $N_2$ concentration and RF power. XRD, Ellipsometer and AES has been measured to find out structural properties and preferred orientation of AlN thin films. Deposition rate of AlN thin film was increased with an increase of RF power and decreased with an increase of $N_2$ concentration. AES in-depth measurements showed that stoichiometry of Aluminium and Nitrogen elements were not affected by $N_2$ concentration. It has shown that low working pressure, low $N_2$ concentration and high RF power should be maintained to deposit AlN thin film with a high degree of (0002) preferred orientation.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2017.05a
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• pp.617-621
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• 2017

The performance characteristics of aluminized high explosive are considered by varying the aluminum(Al) concentration in a two-phase model. Since the time scales of the characteristic combustion process of high explosives and Al particles differ, the process of energy release behind the leading detonation wave front occurs over an extended period of time. Two cardinal observations are reported: a decrease in detonation velocity with an increase in Al concentration and a double front detonation (DFD) feature when anaerobic Al reaction occurs behind the front. In the current study, a series of confined rate sticks are considered for characterizing the performance of aluminized HMX with a maximum Al concentration of 50%. The simulated results are compared with the experimental data for 5%-25% concentrations.

• Fisheries and Aquatic Sciences
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• v.14 no.4
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• pp.355-361
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• 2011

Effects of aluminum (Al) on plasma vitellogenin (VTG), alkaline-labile phosphorus (ALPP), calcium (Ca), glutamate pyruvate transaminase (GPT), the hepatosomatic index (HSI), and hepatic Al concentration were examined in estradiol-$17{\beta}$ ($E_2$)-administered immature rockfish Sebastes schlegeli. Fish were injected intraperitoneally with $E_2$ (5 mg/kg body weight [BW]) and/or Al (0, 0.1, 1, 5, and 10 mg/kg BW) and plasma and liver samples were extracted 7 days later. After sodium dodecyl sulfate polyacrylamide gel electrophoresis, the relative amount of VTG was determined by integrated optical density. VTG accounted for 23.6% of the total proteins in the control group, but this value decreased with increasing Al administration. Al reduced the concentrations of ALPP and Ca in a concentration-dependent manner and significant reduction occurred at Al concentrations greater than 5 mg/kg. The concentration of GPT increased in a concentration-dependent manner in all Al-administered rockfish. The concentrations of Al in the liver also increased, and HSI was decreased, in a concentration-dependent manner. These results suggest that Al inhibits $E_2$-induced VTG production by being toxic to hepatocytes in marine fish.

• Proceedings of the KSR Conference
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• 2011.10a
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• pp.138-141
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• 2011

Carbon dioxide concentration of railroad passenger cabin is obliged to be kept lower than guideline values of 'Indoor air quality guideline for public transportations', but actual carbon dioxide concentration frequently exceeds this guideline value during the morning and evening rush hours. For improving comfortability and satisfaction of passengers, concentration control method using $Al_2O_3$ adsorbents was presented. The adsorbent is made from $Al_2O_3$ and LiOH. $Al_2O_3$ perform as a frame and LiOH as a chemical adsorbent. The adsorbent performance experiment was carried out by measuring concentration change of Carbon dioxide in terms of flow, initial concentration and amount of adsorbent. It is expexted that the obtained results will be used to lower carbon dioxide concentration of railroad passenger cabin.

• ETRI Journal
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• v.24 no.4
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• pp.270-279
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• 2002

We present a self-consistent numerical method for calculating the conduction-band profile and subband structure of AlGaN/GaN single heterojunctions. The subband calculations take into account the piezoelectric and spontaneous polarization effect and the Hartree and exchange-correlation interaction. We calculate the dependence of electron sheet concentration and subband energies on various structural parameters, such as the width and Al mole fraction of AlGaN, the density of donor impurities in AlGaN, and the density of acceptor impurities in GaN, as well as the electron temperature. The electron sheet concentration was sensitively dependent on the Al mole fraction and width of the AlGaN layer and the doping density of donor impurities in the AlGaN. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.