• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.283-284
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• 2005

Al electrode for OLED was deposited by Facing Targets Sputtering(FTS) system which can reduce the damage of organic layer. The Al thin films were deposited on the slide glass as a function of working gas such as Ar, Kr or mixed gas. The film surface image was observed by AFM and SEM. In the results, when Al thin film were deposited using mixed gas, the surface morphology was improved in some region.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.365-366
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• 2007

High quality cathode with high deposition rate of thin films and long target life time is required for manufacturing TFT-LCD and semiconductor. We developed WV(wide view) sputtering cathode with wide erosion area and high deposition rate. Ti thin film thickness variation in WV cathode is below 5% for 380 kWh target life time. Al thin film thickness using normal cathode is decreased about 20%. By using WV cathode, target using efficiency was improved 40%. in comparison with normal cathode.

• 수산해양기술연구
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• 제28권1호
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• pp.53-60
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• 1992

In this study, cathodic protection experiment was carried out by Al-alloy sacrificial anode in marine environments which have specific resistance($\rho$) if 25~7000$\Omega$.cm and investigated protection potential, current density and loss rate of Al-alloy sacrificial anode. The main results resistance($\rho$) of 400$\Omega$.cm, the cathodic protection potential appears high about-720 mV(SCE). But below specific resistance($\rho$) of 300$\Omega$.cm, the cathodic protection potential appears low about-770 mV(SCE) and simultaneously, cathode is protected sufficiently. 2) The loss rate of Al-Alloy sacrificial anode became large with decreasing specific resistance and increasing the ratio(A sub(c)/A sub(a) of bared surface area of anode and cathode. 3) The loss rate of Al-alloy sacrificial anode(w) to the mean current density of anode(i) is as follows. w=ai+b (a, b : experimental constants)

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.376-382
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• 2000

We successfully fabricated OLED(Organic Light Emitting Diodes) with Al cathodes electrode deposited by the DC magnetron sputtering. The effects of a controlled Al cathode layer of an Indium Tin Oxide (ITO)/blended single polymer layer (PVK Bu:PBD:dye)/Al light emitting diodes are described. The PVK (Poly(N-vinylcarbazole)) and Bu-PBD (2-(4-biphenyl-phenyl)-1,3,4-oxadiazole) are used hole transport polymer and electron transport molecule respectively. We found that both current injection and electroluminescence output are significantly different with a variable DC sputtering power. The difference is believed to be due to the influence near the blended polymer layer/cathode interface that results from the DC power and H$\sub$2//O in a chamber. And DC sputtering deposition is an effective way to fabricate Al electrodes with pronounced orientational characteristics without damage occurring to metal-organic interface during the sputtering deposition.

• 한국세라믹학회지
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• 제53권5호
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• pp.494-499
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• 2016

In this work, the effects of different sintering inhibitors added to $La_{0.8}Sr_{0.2}MnO_{3-{\partial}}$ (LSM) were studied to obtain an optimum cathode material for cathode-supported type of Solid oxide fuel cell (SOFC) in terms of phase stability, mechanical strength, electric conductivity and porosity. Four different sintering inhibitors of $Al_2O_3$, $CeO_2$, NiO and gadolinium doped ceria (GDC) were mixed with LSM powder, sintered at $1300^{\circ}C$ and then they were evaluated. The phase stability, sintering behavior, electrical conductivity, mechanical strength and microstructure were evaluated in order to assess the performance of the mixture powder as cathode support material. It has been found that the addition of $Al_2O_3$ undesirably decreased the electrical conductivity of LSM; other sintering inhibitors, however, showed sufficient levels of electrical conductivity. GDC and NiO addition showed a promising increase in mechanical strength of the LSM material, which is one of the basic requirements in cathode-supported designs of fuel cells. However, NiO showed a high reactivity with LSM during high temperature ($1300^{\circ}C$) sintering. So, this study concluded that GDC is a potential candidate for use as a sintering inhibitor for high temperature sintering of cathode materials.

• 전자공학회논문지A
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• 제32A권4호
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• pp.47-56
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• 1995

In this paper the model of the MQE-IMD-based neural trigger circuit is improved, where MQW-IMD is a new semiconductor device proposed and experimentally demonstrated by the author for the hardware implementation of the neural networks. The electron energy of AlXGa1-XAsbarrier is calculated by Ensemble Monte Carlo simulation according to the variation of Al mole fraction x and the applied electric field, whtich had been roughly estimated in the previous paper because of the difficulty to get the data. And in the consideration of the tunneling of the confined electrons within the quantum well the accuracy of the impact ionization rate is enhaned. Finally, the dependance of the frequency of pulse-train on the number of quantum wells can be calculated by modelling the effect of the distance of the induced positive charge from the cathode on the electric field at the cathode.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.207-210
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• 1990

The purpose of this study is to research and develop polymer secondary battery. This paper describes the first discharge characteristics of PAn/Li-Al secondary battery. PAn was prepared in $HBF_4$ aqueous solution by galvanostatic electropolymerization and then used as cathode active material. PAn/Li-Al secondary battery was prepared in 2025 coin type. Characteristics of this battery are summarized as follows. ${\bullet}$ Open curcuit voltage and discharge end voltage was 3.5V and 2.9V, respectively. ${\bullet}$ The ratio of electricities in discharge to theoretical electricities in all undoping of PAn cathode was 56% at constant current discharge of 1mA. ${\bullet}$ The capacity density, energy density and maximum power density per weight of PAn electroactive material were 56.1Ah/kg, 168.4Wh/kg and 16.9kW/kg, respectively.

• Environmental Engineering Research
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• 제24권2호
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• pp.339-346
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• 2019

In this research, applicability of electrochemical technology in removing nitrogenous compounds from solid waste landfill leachate was examined. Novel cathode material was developed at laboratory by introducing a Cu layer on Al substrate (Cu/Al). Al and mild steel (MS) anodes were investigated for the efficiency in removing nitrogenous compounds from actual leachate samples collected from two open dump sites. Al anode showed better performances due to the effect of better electrocoagulation at Al surface compared to that at MS anode surface. Efficiency studies were carried out at a current density of $20mA/cm^2$ and at reaction duration of 6 h. Efficiency of removing nitrate-N using Al anode and developed Cu/Al cathode was around 90%. However, for raw leachate, total nitrogen (TN) removal efficiency was only around 30%. This is due to low ammonium-N removal as a result of low oxidation ability of Al. In addition to the removal of nitrogenous compounds, reactor showed about 30% removal of total organic carbon. Subsequently, raw leachate was diluted four times, to simulate pre-treated leachate. The diluted leachate was treated and around 88% removal of TN was achieved. Therefore, it can be said that the reactor would be good as a secondary or tertiary treatment step in a leachate treatment plant.

• Corrosion Science and Technology
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• 제9권4호
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• pp.171-174
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• 2010

MAO (micro-arc oxidation) is an eco-friendly convenient and effective technology to deposit high-quality oxide coatings on the surfaces of Ti, Al, Mg and their alloys. The roles of the electrolyte concentration and relative cathode electrode area sizes in the grown oxide film during titanium MAO were investigated. The higher the concentration of the electrolyte, the lower the $R_{total}A$ value. The oxide film produced by the lower concentration of the electrolyte is thinner and less uniform than the film by the higher concentration, which is thick and porous. The cathode area size must be bigger than the anode area size in order to minimize the voltage drop across the cathode. The ratio of the cathode area size to the anode area size must be bigger than 8. Otherwise, the cathode will be another source for voltage drop, which is detrimental to and slows down the oxide growth.

• 한국결정성장학회지
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• 제27권6호
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• pp.282-288
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• 2017

본 논문에서는 광전 음극 이미지 센서로 사용될 수 있는 광소자용 재료로 III-V 족 화합물 반도체인 GaAs/AlGaAs 다층 구조를 LPE(Liquid Phase Epitaxy) 방법에 의해 성장하였다. n형 GaAs 기판 위에 수십 nm의 GaAs 완충층을 형성 한 후 Zn가 도핑된 p-AlGaAs 에칭 정지 층(etching stop layer)과 Zn가 도핑된 p-GaAs 층 그리고 Zn가 도핑된 p-AlGaAs 층을 성장하였다. 성장된 시료의 특성을 조사하기 위하여 주사전자현미경(SEM)과 이차이온질량분석기(SIMS) 그리고 홀(Hall) 측정 장치 등을 이용하여 GaAs/AlGaAs 다층 구조를 분석하였다. 그 결과 $1.25mm{\times}25mm$의 성장 기판에서 거울면(mirror surface)을 가지는 p-AlGaAs/p-GaAs/p-AlGaAs 다층 구조를 확인할 수 있었으며, Al 조성은 80 %로 측정 되었다. 또한 p-GaAs층의 캐리어 농도는 $8{\times}10^{18}/cm^2$ 범위까지 조절할 수 있음을 확인하였다. 이 결과로부터 LPE 방법에 의해 성장된 p-AlGaAs/p-GaAs/AlGaAs 다층 구조는 광전 음극 이미지 센서의 소자로서 이용될 수 있을 것으로 기대한다.