• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.181-188
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• 2006

Rutile single crystals grown by skull melting method were cut parallel and perpendicular to growth axis, and both sides of the cut wafers (${\phi}5.5mmx1.0mm$) were then polished to be mirror surfaces. The black wafers were changed into pale yellow color by annealing in air at 1200 and $1300^{\circ}C$ for $3{\sim}15\;and\;10{\sim}50$ hours, respectively. After annealing, structural and optical properties were examined by specific gravity (S.G), SEM-electron backscattered pattern (SEM-EBSP), X-ray diffraction (XRD), FT-IR transmittance spectra, laser Raman spectroscopy (LRS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). These results are analyzed increase of weight in air, decrease of weight in water and specific gravity, shown secondary phase of needle shape, diffusion of oxygen ion and increase of $Ti^{3+}$. From the above results, we suggest that the skull melting method grown rutile single crystals contain defect centers such as $O_v,\;Ti^{3+},\;O_v-Ti^{3+}$ interstitials and $F^+-H^+$.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.6
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• pp.263-269
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• 2019

The mechanism of microstructure and hardness changes during mill annealing of Ti-6Al-4V alloy was investigated. The annealing heat treatments were performed at $675{\sim}795^{\circ}C$ in vacuum for 2 hours, followed by air cooling. The microstructure was observed by using an optical microscope and X-ray diffraction, and hardness was measured by using a Rockwell hardness tester and micro Vickers hardness tester. The average grain size becomes smaller at $675^{\circ}C$ to $735^{\circ}C$ due to the formation of new grains rather than grain growth, but becomes larger at $735^{\circ}C$ to $795^{\circ}C$ due to growth of the already-formed grains rather than formation of new grains. The mill annealing temperature becomes higher, the ${\beta}$ phase fraction decreases and ${\alpha}$ phase fraction increases at room temperature. This is because the higher annealing temperature, the smaller amount of V present in the ${\beta}$ phase, and thus the ${\beta}$ to ${\alpha}$ transformation occurs more easily when cooled to room temperature. As the mill annealing temperature increases, the hardness value tends to decrease, mainly due to resolution of defects such as dislocations from $675^{\circ}C$ to $735^{\circ}C$ and due to grain growth from $735^{\circ}C$ to $795^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.734-739
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• 2005

Zinc oxide films were deposited on Si (111) substrates by radio-frequency (rf)sputtering at a room temperature and post annealed in Na, air, and $H_2O$ ambient at temperatures between $800{\circ}C$ for 2 hrs. The properties were investigated by atomic force microscope (AFM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and photoluminescence (PL). Our experiments demonstrated that ZnO films have the better crystal quality for post thermal annealing and especially in $H_2O$ ambient. Even though thermal annealing reduced deep level emission somewhat, for further getting rid off deep level emission, oxygen contents should be adjusted. In our results, $H_2O$ ambient gave the best structural and optical properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.776-779
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• 2007

In this study we present the effect of annealing temperatures on the structural, electrical and optical characteristics of Ga-doped ZnO (GZO) films. GZO target is deposited on coming 7059 glass substrates by DC sputtering. and then GZO films are annealed at temperatures of 400, 500, $600^{\circ}C$ in air ambient for 20 min. in this case of as-grown film, it shows the resistivity of $6{\times}10^{-1}{\Omega}{\cdot}cm$ and transmittance under 85%, whereas the electrical and optical properties of film annealed at $500^{\circ}C$ are enhanced up to $1.9{\times}10^{-3}{\Omega}{\cdot}cm$ and 90%, respectively.

• Korean Journal of Materials Research
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• v.26 no.5
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• pp.241-245
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• 2016

Hydrogen is considered a potential future energy source. Among other applications of hydrogen, hydrogen-rich water is emerging as a new health care product in industrial areas. Water electrolysis is typically used to generate a hydrogen rich water system. We annealed 10AA carbon paper in air to use it as an electrode of a hydrogen rich water generator. Driven by annealing, structural changes of the carbon paper were identified by secondary electron microscope analysis. Depending on the various annealing temperatures, changes of the hydrophilic characteristics were demonstrated. The crystal structures of pristine and heat-treated carbon paper were characterized by X-ray diffraction. Improvement of the efficiency of the electrochemical oxygen evolution reaction was measured via linear voltammetry. The optimized annealing temperature of 10AA carbon paper showed the possibility of using this material as an effective hydrogen rich water generator.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.326-332
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• 2008

In this work CdS films were prepared by using chemical bath deposition, which is simple and inexpensive technique suitable for large deposition area. Annealing in air at different temperatures (300, 350, 400, 450 and $500^{\circ}C$) at constant time of 30 min, also for different times (15, 30, 45, 60 and 90 min) at constant temperature ($300^{\circ}C$) is achieved. X-Ray analysis has confirmed the formation of cadmium oxide (CdO) with slight increase in grain size, shift towards lower scattering angle due to relaxation in the tensile strain for deposition films, and structure change from cubic and hexagonal to the hexagonal. From electrical properties, significant increase in electrical conductivity appeared in samples annealed at $300^{\circ}C$ for 60 min, and at $350^{\circ}C$ for 30 min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.51-52
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• 2005

Phosphorus doped ZnO thin films on (001) $Al_2O_3$ substrate have been prepared by a pulsed laser deposition (PLD) technique using a Nd:YAG laser. After deposition, phosphorus doped ZnO thin films have been annealed in vacuum, air, nitrogen, and oxygen ambients using pulsed Nd:YAG laser. We report the electrical properties of phosphorus doped ZnO thin films with the variation of the laser annealing conditions for the applications of optoelectronic devices.

• Korean Journal of Optics and Photonics
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• v.11 no.3
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• pp.152-157
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• 2000

Post-deposition vacuum annealing effects in electron-bearn-evaporated indium tin oxide (ITO) films have been investigated by the change of transmittance, sheet resistance and crystalline structure with annealing temperature ( $200-335^{\circ}C$) and oxygen partial pressure ($1\times^10^{-5}-1$\times10^{-4} torr$) in air and vacuum. The sarnples were polycrystalline films with a preferred orientation in the (222) plan. High quality films with sheet resistance as low as 62 Q/O and transmittance over 99% (absentee layer at 500 nm) have been obtained by suitably controlling the vacuum annealing pararneters.neters.

• Journal of Sensor Science and Technology
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• v.13 no.1
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• pp.66-71
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• 2004

Pt-doped zinc oxide (ZnO:Pt) films were deposited by ultrasonic spray pyrolysis. Resistivity variation with Pt concentration was measured. The Pt distribution in ZnO:Pt films was studied through Auger Electron Spectroscopy (AES). The ZnO:Pt films were annealed in the ambient of air, water vapor and ozone, respectively. The variation in crystallographic properties and surface morphologies with respect to the annealing condition was observed by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). The resistivity variation of the films with the annealing condition was measured. Finally, Atomic Force Microscopy (AFM) measurements were carried out to study the effects of the annealing on the roughness of ZnO:Pt films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.215-222
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• 1995

Nb doped strontium titanate single crystals were grown by the floating zone method. The doping amount of $Nb_2O_5$ was 0.2 wt %. Those crystals were grown in air and N z atmosphere and the growth rate was 5 mmlhr and rotation speed of upper and lower shaft was 30 rpm. The shapes of melt - feed rod interface depending on sintering temperatures were observed. In air atmosphere, the flow rate of air was 1.5 ${\ell}/min$ and in $N_2$ atmosphere, that of $N_2$ gas was 0.5 ${\ell}/min$. As grown crystals were analyseQ by XRD, Laue back - reflection and chemical etching. After annealing in $N_2$ atmosphere, resistivities of crystals were measured and the activation energies of each samples were calculated.