• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.507-510
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• 1995

A heat-treatment method of pre-annealing and then flash annealing(FA) has been used to improve the soft magnetic properties of nanocrystalline $Fe_{76}CuSi_{13}B_{10}$ and $Fe_{74}CuNb_{3}Si_{12}B_{10}$ alloys. Outstanding magnetic properties of nanocrystalline $Fe_{74}CuNb_{3}Si_{12}B_{10}$ alloy were attained by flash-annealing in air after annealed at $500^{\circ}C$ for 0.5hr below the crystallization temperature. The same results were obtained for $Fe_{74}CuSi_{13}B_{10}$ alloy. The measurment of relief of stress and X-ray diffraction were used to analyze the effect of flashannealing.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.115-121
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• 2013

ZnO film has been used for CIGS solar cells as a buffer layer as itself or by doping Mg and Sn; ZnO film also has been used as a transparent conducting layer by doping Al or B for solar cells. Since ZnO itself is a host material for many applications it is necessary to understand the electrical and optical properties of ZnO film itself with various preparation conditions. We prepared ZnO films by converting ZnS precursor into ZnO film by thermal annealing. ZnO film was formed at low temperature as low as $500^{\circ}C$ by annealing a ZnS precursor layer in air. In the air annealing, the electrical resistivity decreased monotonically with increasing annealing temperature; the intensity of the green photoluminescence at 505 nm increased up to $750^{\circ}C$ annealing. The electrical resistivity further decreased and the intensity of green emission also increased in reducing atmospheres. The results suggest that deep-level defects originated by oxygen vacancy enhanced green emission, which reduce light transmittance and enhance the recombination of electrons in conduction band and holes in valence. More oxidizing environment is necessary to obtain defect-free ZnO film for higher transparency.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.36-40
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• 2004

$SnO_2$ thin films were deposited on a $SiO_2$/Si substrate with the flow of Ar and $O_2$ of 25 sccm by RF-magnetron sputtering method. the post-annealing was conducted at $500^{\circ}C$ in atmosphere of dry air and $N_2$ were changed fairly, while those annealed in dry air resembled as-deposited films. This may be attributed to the desorption of adsorbed oxygen and the extraction of lattice oxygen during annealing. Resistivity of films annealed in $N_2$ was increased over 5 times than that of as-deposited films. It can be explained that the increment of resistivity may result from the discontinuous conduction path with change of microstructures after annealing in $N_2$.

• Journal of the Korean Magnetics Society
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• v.5 no.6
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• pp.968-973
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• 1995

In order to investigate the annealing effect for RF magnetron sputtered $Ni_{83}Fe_{17}$ thin films, we have studied the spin wave rehaviors by FMR after annealing the samples at $135^{\circ}C,\;225^{\circ}C$ in air and at $160^{\circ}C,\;220^{\circ}C,\;330^{\circ}C,\;390^{\circ}C\;and\;420^{\circ}C$ in argon gas for one hour respectively. In FMR spectra for the films annealed in argon gas and the assputtered film at perpendicular resonance, only odd numrer spin waves are observed. But even numrer spin waves are observed for the film annealed in air at $225^{\circ}C$ recause of the large difference retween both surface magnetic anisotropy. In the case of the sample annealed at $420^{\circ}C$ in argon gas, the spin waves are shifted toward high field, can due to the increase of saturation magnetization during annealing. The spacings retween the spin wave resonance fields are narrowed rapidly, this is thought that the magnetic homogeneity increased in the film after annealing at high temperature.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.4
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• pp.130-136
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• 2018

In this paper, the effects of different 3D printing parameters including laminated angle and annealing temperature, were observed for their effects on tensile testing. In 3D printing, a filament is heated quickly, extruded, and then cooled rapidly. Because plastic is a poor heat conductor, it heats and cools unevenly causing the rapid heating and cooling to create internal stress within the printed part. Therefore, internal stress can be removed using annealing and to increase tensile strength and strain. During air cooling at annealing temperature $140^{\circ}C$, the strain of laminated angle $45^{\circ}$ specimens tended to increase by 46% while the tensile stress tended to increase by 7.4%. During oven cooling at annealing temperature $140^{\circ}C$, the strain of laminated angle $45^{\circ}$ specimens tended to increase by 34% while the tensile stress tended to increase by 22.2%. In this study, we found "3D printing with annealing" eliminates internal stress and increases the strength and stiffness of a printed piece. On the microstructural level, annealing reforms the crystalline structures to even out the areas of high and low stress, which created fewer weak areas. These results are very useful for making 3D printed products with a mechanical strength that is suitable for applications.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1037-1043
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• 1994

The effects of annealing atmosphere and temperature on piezoelectricity (k33) and the mechanical strength of machined PZT was studied. Morphotropic Nb-doped PZT was sintered, machined to a rod and then annealed between 80$0^{\circ}C$ and 100$0^{\circ}C$ in air, PbZrO3, and CuO atmospheres respectively. In air or PbZrO3 atmosphere, the compressive strength of Nb-doped PZT increased by 12% with little change in k33 irrespective of annealing temperature. In CuO atmosphere, on the other hand, the compressive strength increased by 20% with little change in k33 at 80$0^{\circ}C$ but both turned to significant decrease above 90$0^{\circ}C$. The examination of the phase distribution and microstructure beneath the surface of CuO-treated PZT revealed that the changes in compressive strength and k33 are closely related to the reaction between PZT and vaporized CuO:liquid PbO precipitated in shallow surface region by the substitution of Cu to Pb sites enhances the decrease in microcracks and the surface roughness at 80$0^{\circ}C$ ; rapid evaporation of precipitated PbO expands a porous region of changed composition into the bulk above 90$0^{\circ}C$.

• Journal of Magnetics
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• v.6 no.3
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• pp.86-89
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• 2001

Microstructure modifications are investigated for annealed Co-based amorphous ribbon in vacuum and open air. X-ray diffraction (XRD) spectra for annealed sample in vacuum indicate atomic arrangements with initial nucleation of hcp-Co crystallite at 38$0^{\circ}C$ annealing temperature. However, the XRD spectra in samples with long annealing times of $t_a\geq300$ min demonstrate sharp and good developed surface crystalline hcp-, fcc- Co and $Co_2$Si phases. The giant magnetoimpedance (GMI) profile at 0.1 MHz displaying one-peak behavior in vacuum annealed samples at T = 38$0^{\circ}C$ irrespective of annealing time $t_a$ from 20 to 480 mim. For the annealed samples in an open air, the GMI profile shows two-peaks for $t_a$ = 20 min annealed sample. However, one of peaks disappears and an asymmetric GMI profile exhibits a drastic step-like change near zero field for $t_a\geq300$min. Such asymmetric GMI characteristics is related to the surface microstructures of fcc-Co, hop-Co and $Co_2$Si crystalline phases.

• Journal of the Korean institute of surface engineering
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• v.45 no.3
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• pp.117-122
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• 2012

ZTO/GZO double layered films were prepared on unheated non-alkali glass substrates. ZTO films were deposited by RF/DC hybrid magnetron co-sputtering using ZnO (RF) target and $SnO_2$ (DC) targets, and then GZO films were deposited by DC magnetron sputtering using an GZO ($Ga_2O_3$:5.57 wt%) target. These films were post-annealed at temperature of 200, $300^{\circ}C$ in air and vacuum ambient for 30 min. In the case of post-annealing in air, ZTO/GZO double layer showed relatively low resistivity change, compared to GZO single layer. Furthermore, ZTO/GZO double layer revealed low WVTR, compared to GZO single layer. Therefore, it can be confirmed that ZTO film doing a role with barrier for water or oxygen diffusion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.859-863
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• 2010

Evolution of surface morphology of ${\alpha}-Al_2O_3$ substrate was investigated as a function of annealing temperature and time. Commercial (0001) ${\alpha}-Al_2O_3$ single crystal substrates were annealed in the range of $600-1000^{\circ}C$ in air. At $600^{\circ}C$, step-terrace structure started to be formed on the substrate. However, the surface roughness on the terrace was still considerable and a number of islands were observed on the step edges as well as the terraces. As the annealing temperature increased, the islands were absorbed into the step edges. Thus the terraces were smoother and the step edges were more straightened. Well-defined surface with a step height of 0.2 nm was formed above $900^{\circ}C$. On the other hand, when the substrate was annealed at a fixed temperature of $1000^{\circ}C$, the change of surface morphology was observed for the substrate annealed for 10 min. After the annealing for 30 min, the surface on which any islands could not survive was observed.

• Journal of the Korean Vacuum Society
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• v.14 no.3
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• pp.159-164
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• 2005

Indium tin oxide (ITO) films were deposited on a glass slide at a thickness of 280 nm by radio frequency(rf) magnetron sputtering from a ceramic target composed of $In_2O_3\;(90\%)\;+\;SnO_2\;(10\%)$. We investigated the effects of the annealing temperature (Ta) between 200 and 350'E for 30 min in air on such properties as thermal stability, surface morphology, and crystal structure of the films. X-ray diffraction spectra revealed that all the films were oriented preferably with [222] direction and [440] direction and the peak intensity increased with increasing annealing temperature. X-ray photoelectron spectroscopy (XPS) showed that the sodium was out-diffused from the glass substrate at the annealing temperature of $350^{\circ}C$. The sodium composition of the ITO film amlealed at $350^{\circ}C\;for\;30\;min\;was\;2.5\%$ at the surface. Also the sodium peak almost disappeared after 3 keV $Ar^+$sputtering for 6 min. The visible transmittance of all ITO films was over $77\%$.