• Title/Summary/Keyword: Air annealing

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Stress Behavior of PSG/SiN Film for Passivation in Semiconductor Memory Device (반도체 소자의 표면보호용 PSG/SiN 절연막의 스트레스 거동)

  • Kim, Yeong-Uk;Sin, Hong-Jae;Ha, Jeong-Min;Choe, Su-Han;Lee, Jong-Gil
    • Korean Journal of Materials Research
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    • v.1 no.1
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    • pp.46-53
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    • 1991
  • The stress of PSG (Phosphosilicate glass), USG (Undoped-silicate grass) and SiN films, which are mainly used as passivation layers in semiconductor memory devices, deposited by CVD methods has been studied as a function of film thickness and holding time in air. The stress of the PSG film or the USG film is increased in tensile state with increasing film thickness. On the other hand the stress level of the SiN film in compressive stress does not change as film thickness changes. The stress of PSG film shows the drastic change from the tensile stress to the compressive stress after the film is left 2 days in air. FTIR spectra indicated that the stress variation was due to the penetration of water molecule. It looks possible to recover the stress of about $2.5{\times}{10^9}dyne/cm^2$ by annealing treatment at $300^{\circ}C$ for 20min. The total stress of multi-layered films having the PSG film is determined mainly by the stress variation of PSG layer with holding time. The total stress of multi-layered film appears to have a functional relationship with the stress in the thickness of each film. The resistance against stress-migration of sputtered Al line increases with increasing the tensile stress for the PSG film or the USG film.

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Effects of Additives on the Characteristics of Sodium Borosilicate Thin Film Fabricated by AFD Method (첨가제가 AFD법에 의해 제조된 광소자용 Sodium Borosilicate 박막의 물성에 미치는 영향)

  • Chung, Hyung-Gon;Chun, Young-Yun;Mun, Jong-Ha;Chung, Suck-Jong;Lee, Hyung-Jong
    • Korean Journal of Materials Research
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    • v.8 no.8
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    • pp.693-698
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    • 1998
  • The effects of $AI_{2}$$O_{3}$ and the ratio of $Na_2O/B_2O_3$ on the phase separation and optical properties of sodium borosilicate glass film fabricated by AFD(Aerosol Flame Deposition) were investigated. When AI,O, of 6wt% was added to $66SiO_2-27B_2O_3-7Na_2O$ the clear glass film without any crystallization was produced under air-quenching condition after consolidation. As the amount of $AI_{2}$$O_{3}$ increased from 1.5 to 6.0 wt% the refractive index linearly increased from 1.4610 to 1.4701, and the difference of TE and TM mode causing by residual stress in film increased gradually. However, the difference of TE and TM mode to reveal birefringence could be minimized by annealing below the glass transition temperature after consolidation and air quenching. On the other hand. as the ratio of $Na_2O/B_2O_3$ increased the refractive index and birefringence of glass film tended to increase, but the measurement of their values were not available at over the critical ratio of $Na_2O/B_2O_3$, because of the cloudiness due to crystallization. The phase separation was greatly accelerated with increasing the ratio of $Na_2O/B_2O_3$.

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Fabrication and Characteristics of High Efficiency Silicon PERL (passivated emitter and rear locally-diffused cell) Solar Cells (PERL (passivated emitter and rear locally-diffused cell) 방식을 이용한 고효율 Si 태양전지의 제작 및 특성)

  • Kwon, Oh-Joon;Jeoung, Hun;Nam, Ki-Hong;Kim, Yeung-Woo;Bae, Seung-Chun;Park, Sung-Keoun;Kwon, Sung-Yeol;Kim, Woo-Hyun;Kim, Ki-Wan
    • Journal of Sensor Science and Technology
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    • v.8 no.3
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    • pp.283-290
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    • 1999
  • The $n^+/p/p^+$ junction PERL solar cell of $0.1{\sim}2{\Omega}{\cdot}cm$ (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM (air mass)1.5, $100\;mW/cm^2$ $I_{sc}$, $V_{oc}$, fill factor and the conversion efficiency were 43mA, 0.6 V, 0.62. and 16% respectively.

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Analysis of Electrochemical Properties of Sulfide All-Solid-State Lithium Ion Battery Anode Material Using Amorphous Carbon-Removed Graphite (비정질 탄소가 제거된 흑연을 이용한 황화물계 전고체 리튬이온전지 음극소재 전기화학적 특성 분석)

  • Choi, Jae Hong;Oh, Pilgun
    • Applied Chemistry for Engineering
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    • v.33 no.1
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    • pp.58-63
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    • 2022
  • Graphite has been used as an anode material for lithium-ion batteries for the past 30 years due to its low de-/lithiation voltage, high theoretical capacity of 372 mAh/g, low price, and long life properties. Recently, all-solid-state lithium-ion batteries (ASSLB), which are composed of inorganic solid materials with high stability, have received great attention as electric vehicles and next-generation energy storage devices, but research works on graphite that works well for ASSLB systems are insufficient. Therefore, we induced the performance improvement of ASSLB anode electrode graphite material by removing the amorphous carbon present in the carbon material surface, acting as a resistive layer from the graphite. As a result of X-ray diffraction (XRD) analysis using heat treated graphite in air at 400, 500, and 600 ℃, the full width at half maximum (FWHM) at (002) peak was reduced compared to that of bare graphite, indicating that the crystallinity of graphite was improved after heat treatment. In addition, the discharge capacity, initial coulombic efficiency (ICE) and cycle stability increased as the crystallinity of graphite increased after heat treatment. In the case of graphite annealed in air at 500 ℃, the high capacity retention rate of 331.1 mAh/g and ICE of 86.2% and capacity retention of 92.7% after 10-cycle measurement were shown.

Crystalline structures and electrical properties of $Pb[(Zr,Sn)Ti]NbO_3$ Thin Films deposited using RF Magnetron Sputtering Method (RF 마그네트론 스퍼터링 방법으로 제작된 $Pb[(Zr,Sn)Ti]NbO_3$ 박막의 결정구조와 전기적 특성)

  • Choi, Woo-Chang;Choi, Yong-Jung;Choi, Hyek-Hwan;Lee, Myoung-Kyo;Kwon, Tae-Ha
    • Journal of Sensor Science and Technology
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    • v.9 no.3
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    • pp.242-247
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    • 2000
  • $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3(PNZST)$ thin films were deposited by RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3(LSCO)/Pt/Ti/SiO_2/Si$ substrate using a PNZST target with excess PbO of 10 mole%. The thin films deposited at substrate temperature of $500^{\circ}C$, and at RF power of 80W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at $650^{\circ}C$ for 10 seconds in air exhibited the good structures and electrical properties. The fabricated PNZST capacitor had a remanent polarization value of about $20\;{\mu}C/cm^2$ and coercive field of about 50 kV/cm. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

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Synthesis of Hexagonal β-Ni(OH)2 Nanosheet as a Template for the Growth of ZnO Nanorod and Microstructural Analysis (ZnO 나노 막대 성장을 위한 기판층으로서 hexagonal β상 Ni(OH)2 나노 시트 합성 및 미세구조 분석)

  • Hwang, Sung-Hwan;Lee, Tae-Il;Choi, Ji-Hyuk;Myoung, Jae-Min
    • Korean Journal of Materials Research
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    • v.21 no.2
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    • pp.111-114
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    • 2011
  • As a growth-template of ZnO nanorods (NR), a hexagonal $\beta-Ni(OH)_2$ nanosheet (NS) was synthesized with the low temperature hydrothermal process and its microstructure was investigated using a high resolution scanning electron microscope and transmission electron microscope. Zinc nitrate hexahydrate was hydrolyzed by hexamethylenetetramine with the same mole ratio and various temperatures, growth times and total concentrations. The optimum hydrothermal processing condition for the best crystallinity of hexagonal $\beta-Ni(OH)_2$ NS was determined to be with 3.5 mM at $95^{\circ}C$ for 2 h. The prepared $Ni(OH)_2$ NSs were two dimensionally arrayed on a substrate using an air-water interface tapping method, and the quality of the array was evaluated using an X-ray diffractometer. Because of the similarity of the lattice parameter of the (0001) plane between ZnO (wurzite a = 0.325 nm, c = 0.521 nm) and hexagonal $\beta-Ni(OH)_2$ (brucite a = 0.313 nm, c = 0.461 nm) on the synthesized hexagonal $\beta-Ni(OH)_2$ NS, ZnO NRs were successfully grown without seeds. At 35 mM of divalent Zn ion, the entire hexagonal $\beta-Ni(OH)_2$ NSs were covered with ZnO NRs, and this result implies the possibility that ZnO NR can be grown epitaxially on hexagonal $\beta-Ni(OH)_2$ NS by a soluble process. After the thermal annealing process, $\beta-Ni(OH)_2$ changed into NiO, which has the property of a p-type semiconductor, and then ZnO and NiO formed a p-n junction for a large area light emitting diode.

Synthesis of Li2MnSiO4 by Solid-state Reaction (고상반응법을 이용한 Li2MnSiO4 합성)

  • Kim, Ji-Su;Shim, Joong-Pyo;Park, Gyung-Se;Sun, Ho-Jung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.5
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    • pp.398-402
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    • 2012
  • Synthesis of $Li_2MnSiO_4$ was attempted by the conventional solid-state reaction method, and the phase formation behavior according to the change of the calcination condition was investigated. When the mixture of the three source materials, $Li_2O$, MnO and $SiO_2$ powders, were used for calcination in air, it was difficult to develop the $Li_2MnSiO_4$ phase because the oxidation number of $Mn^{2+}$ could not be maintained. Therefore, two-step calcination was applied: $Li_2SiO_3$ was made from $Li_2O$ and $SiO_2$ at the first step, and $Li_2MnSiO_4$ was synthesized from $Li_2SiO_3$ and MnO at the second step. It was easy to make $Li_2MnSiO_3$ from $Li_2O$ and $SiO_2$. $Li_2MnSiO_4$ single phase was developed by the calcination at $900^{\circ}C$ for 24 hr in Ar atmosphere as the oxidation of $Mn^{2+}$ was prevented. However, the $Li_2MnSiO_4$ was ${\gamma}-Li_2MnSiO_4$, one of the polymorph of $Li_2MnSiO_4$, which could not be used as the cathode materials in Li-ion batteries. By applying the additional low temperature annealing at $400^{\circ}C$, the single phase ${\beta}-Li_2MnSiO_4$ powder was synthesized successfully through the phase transition from ${\gamma}$ to ${\beta}$ phase.

Ferroelectric Properties of Pb[(Zr,Sn)Ti]NbO3 Thin Films with Various Composition Ratio (조성비에 따른 Pb[(Zr,Sn)Ti]NbO3 박막의 강유전 특성)

  • Choi, Woo-Chang;Choi, Hyek-Hwan;Lee, Myoung-Kyo;Kwon, Tae-Ha
    • Journal of Sensor Science and Technology
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    • v.11 no.1
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    • pp.48-53
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    • 2002
  • Ferroelectric $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{1-x}Ti_x]_{0.98}Nb_{0.02}O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3$(LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films with various composition ratio were investigated. The thin films deposited at the substrate temperature of $500^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA) at $650^{\circ}C$ for 10 seconds in air. A PNZST thin films with Ti of 10 mole% showed the good crystallinity and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about $20\;{\mu}C/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

Physical Properties and Flame Retardency of Polyhydroxyamides (PHAs) Having Pendant Groups in the Main Chain (주사슬에 곁사슬기를 갖는 폴리히드록시아미드의 물성 및 난연특성)

  • Yoon, Doo-Soo;Choi, Jae-Kon;Jo, Byung-Wook
    • Polymer(Korea)
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    • v.30 no.6
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    • pp.478-485
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    • 2006
  • Physical properties and flammability of polyhydroxyamides (PHAs) haying poly (ethylene-glycol) methyl ether (MPEG) and/or dimethylphenoxy pendants were studied by using DSC, TGA, FTIR, pyrolysis combustion flow calorimeter (PCFC), and X-ray diffractometer. The degradation temperatures of the polymers were recorded in the ranges of $276{\sim}396^{\circ}C$ in air. PCFC results showed that the heat release (HR) capacity and total heat release (total HR) values of the PHAs were increased with in-creasing molecular weight of MPEG. In case of M-PHA 2 annealed at $290^{\circ}C$, the values of HR capacity were siginificantly decreased from 253 to 42 J/gK, and 60% weight loss temperatures increased from 408 to $856^{\circ}C$ with an annealing temperature. The activation energy for the decomposition reaction of the PHAs showed in the range of $129.3{\sim}235.1kJ/mol$, which increased with increasing conversion. Tensile modulus of PHAs were decreased as increasing chain of MPEG, and showed an increase more than initial modulus after converted to PBOs.

Effect of magnetic separation in removal of Cr and Ni from municipal solid waste incineration (MSWI) bottom ash (생활폐기물(生活廢棄物) 소각(燒却) 바닥재의 자력선별(磁力選別)에 따른 크롬과 니켈의 거동(擧動))

  • Ahn, Ji-Whan;Um, Nam-Il;Cho, Kye-Hong;Oh, Myung-Hwan;You, Kwang-Suk;Han, Gi-Chun;Cho, Hee-Chan;Han, Choon;Kim, Byong-Gon
    • Resources Recycling
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    • v.16 no.6
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    • pp.3-9
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    • 2007
  • Although the ferrous material was separated by the magnetic separation before the incineration process, the municipal solid waste incineration bottom ash generated during incinerator in metropolitan area consists of many iron products which account for about $3{\sim}11%$ as well as ceramics and glasses. The formation of $NiFe_2O_4$ and $FeCr_2O_4$ with a $Fe_3O_4-Fe_2O_3$ (similar to pure Fe) on the surface of iron product was found during air-annealing in the incinerator at $1000^{\circ}C$, because Ni and Cr has a chemical attraction about iron is using to coat with Ni and Cr metals for poish or to prevent corrosion. Therefore, Fe-Ni Cr oxide can be formed on durface of the iron product and it can be separated from bottom ash through the magnetic separation. So, in this study, the separation ratio of heavy metals as magnetic separation and mineralogical formation of Fe-ion(heavy metal) in ferrous metals corroded were investigated. As the result, the separation ratio of Ni and Cr based on particle sizes accounted for about $45{\sim}50%$, and Cu and Pb accounted for below 20%. Also, the leaching concentration of Ni and Cr in bottom ash separated by magnetic separation was lower than that in fresh bottom ash.