• Journal of Powder Materials
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• 제13권1호
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• pp.25-32
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• 2006

The alumina dispersion-strengthened (DS) C15715 Cu alloy fabricated by a powder metallurgy route was annealed at temperatures ranging from $800^{\circ}C\;to\;1000^{\circ}C$ in the air and in vacuum. The effect of the annealing on microstructural stability and room-temperature mechanical properties of the alloy was investigated. The microstructure of the cold rolled OS alloy remained stable until the annealing at $900^{\circ}C$ in the air and in vacuum. No recrystallization of original grains occurred, but the dislocation density decreased and newly formed subgrains were observed. The alloy annealed at $1000^{\circ}C$ in the air experienced recrystallization and grain growth took place, however annealing in vacuum at $1000^{\circ}C$ did not cause the microstructural change. The mechanical property of the alloy was changed slightly with the annealing if the microstructure remained stable. However, the strength of the specimen that was recrystallized decreased drastically.

• Korean Journal of Materials Research
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• 제34권2호
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• pp.79-84
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• 2024

Thin films of yttria-stabilized zirconia (YSZ) nanoparticles were prepared using a low-temperature deposition and crystallization process involving successive ionic layer adsorption and reaction (SILAR) or SILAR-Air spray Plus (SILAR-A+) methods, coupled with hydrothermal (175 ℃) and furnace (500 ℃) post-annealing. The annealed YSZ films resulted in crystalline products, and their phases of monoclinic, tetragonal, and cubic were categorized through X-ray diffraction analysis. The morphologies of the as-prepared films, fabricated by SILAR and SILAR-A+ processes, including hydrothermal dehydration and annealing, were characterized by the degree of surface cracking using scanning electron microscopy images. Additionally, the thicknesses of the YSZ thin films were compared by removing diffusion layers such as spectator anions and water accumulated during the air spray plus process. Crack-free YSZ thin films were successfully fabricated on glass substrates using the SILAR-A+ method, followed by hydrothermal and furnace annealing, making them suitable for application in solid oxide fuel cells.

• Journal of the Korean Ceramic Society
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• 제53권4호
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• pp.450-455
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• 2016

Color change in single-crystal, yellow, red, purple, and colorless cubic zirconias (CZs) was investigated as a function of annealing in vacuum and air atmosphere at $800-1400^{\circ}C$ for 30 min, for development of a damascene process of plugging a precious metal paste at the elevated temperature. Coloring-element contents of the CZs were evaluated using WD-XRF, and the color change determined visually by naked eye, and using a digital camera and UV-Vis-NIR color analyzer. WD-XRF showed that all of the CZs had cubic-phase stabilizer elements and coloring elements. All CZs that underwent vacuum annealing exhibited a slight color change at $<900^{\circ}C$, while their colors began to change to black at $1100^{\circ}C$, and became opaque black at $1400^{\circ}C$. After air annealing, there was almost no color change up to $1400^{\circ}C$. Since red and purple CZs showed greater color difference (CD) values than the others, the degree of CD is likely to depend on the original color of the CZ due to the different stabilities of their coloring elements during annealing. Based on our results, it is suggested that annealing in air at $<900^{\circ}C$ is advantageous, and assorted colored CZs can be used for precious metal damascene.

• Journal of the Korean Society for Heat Treatment
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• 제19권3호
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• pp.149-155
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• 2006

The effects of eight types of spheroidizing annealing conditions including annealing temperature, annealing time, cooling rate, and gas atmosphere in the annealing furnace on the microstructure were determined in SM45C steel which has been widely used for automotive parts. The well-developed spheroidized structure and minimum hardness were obtained when the steel was heat-treated 6 hours at $740^{\circ}C$, cooled to $710^{\circ}C$ at a cooling rate of $24^{\circ}C/h$, and then kept for 7 hours at the $710^{\circ}C$ followed by air cooling. In order to increase the productivity and to save the manufacturing cost, it is desirable to apply a faster cooling rate in the spheroidizing annealing. It was found that air cooling was the fastest cooling rate applicable to the SM45C steel. The steel heat treated in air showed the decarburized layer of about $110{\mu}m$ in thickness at the surface of the specimen, resulting in serious problems in the quality of the quenched product.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제11권12호
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.422-426
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• 2003

Cu thin films of $6000{\AA}$ thickness were deposited by Electron Beam Evaporation(EBE) method on the glass. The resistivity properties and adhesion of Cu thin films were investigated by various annealing and substrate temperature. Cu thin films were annealed in the air and vacuum condition for 10 min after the deposition. The resistivity and adhesion(the force required to separate films from substrates) was measured by 4-point probe and scratch testing. The resistivity of non-annealing Cu thin films was distinguished more substrate temperature loot than substrate temperature R.T, $200^{\circ}C$. In the case of air condition annealing, as heating temperature was increased, the resistivity was decreased. In the case of vacuum condition annealing, the resistivity was increased at heating temperature $200^{\circ}C$. The best resistivity($1.72\;{\mu}{\Omega}{\cdot}cm$) of Cu thin films was obtained by the air condition heating temperature $200^{\circ}C$ at the substrate heating temperature $100^{\circ}C$. As a result of scratch testing, adhesion was increased by annealing. And maximum adhesion had 600 gf.

• Journal of the Korean Society for Heat Treatment
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• 제17권4호
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• pp.223-229
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• 2004

The effects of the cooling and annealing conditions on the microstructures and corrosion properties were investigated for the Cu-contained Zr-Nb alloy (Zr-1.1Nb-0.07Cu). After annealing at $1050^{\circ}C$ for 15 min, the specimens were cooled by three methods of water quenching, air cooling, and furnace cooling. Widmanstatten structures were developed in both air- and furnace-cooled specimens, and the Widmanstatten plate width of the furnace-cooled specimens was wider than that of the air-cooled ones. The weight gain in the furnace-cooling case was higher than that in the air-cooling case. This could be the reason why the diffusion time was more enough during the furnace cooling than the air cooling. The oxide of the furnace-cooled specimen was nonunformly formed just beneath the Widmanstatten plate boundaries, where ${\beta}_{Zr}$ phases were exised concentrately. Compared with the $640^{\circ}C$ annealing after the water quenching, the $570^{\circ}C$ annealing could make the ${\beta}_{Nb}$ phases and a concomitant reduction of the Nb in the matrix, and then it could improve the corrosion resistance with the increase of the annealing time. It would be concluded that the corrosion resistance of the Zr-1.1Nb-0.07Cu was good when the Nb concentration in the matrix was reached at an equilibrium level and then the ${\beta}_{Nb}$ phase was formed.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 한국경영과학회/대한산업공학회 2005년도 춘계공동학술대회 발표논문
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• pp.1020-1025
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• 2005

The set covering(SC) problem has many practical application of modeling not only real world problems in civilian but also in military. In this paper we study optimal allocation model for maximizing utility of consolidating old fashioned and new air defense weapon system like Patriot missile and develop the new computational algorithm for the SC problem by using simulated annealing(SA) algorithm. This study examines three different methods: 1) simulated annealing(SA); 2) accelerated simulated annealing(ASA); and 3) selection by effectiveness degree(SED) with SA. The SED is adopted as an enhanced SA algorithm that the neighboring solutions could be generated only in possible optimal feasible region at the PERTURB function. Furthermore, we perform various experiments for both a reduced and an extended scale sized situations depending on the number of customers(protective objective), service(air defense), facilities(air defense artillery), threat, candidate locations, and azimuth angles of Patriot missile. Our experiment shows that the SED obtains the best results than others.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.725-728
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• 2001

We have fabricated thin films using the DC/RF magnetron sputtering of 74wt%Ni-l8wt%Cr-4wt%Al-4wt%Cu alloy target and studied the effect of the process parameters on the electrical properties for low TCR(Temperature Coefficient of Resistance) films. In sputtering process, pressure, power and substrate temperature, are varied as controllable parameter. The films are annealed to 400$^{\circ}C$ in air and nitrogen atmosphere. The sheet resistance, TCR of the films increases with increasing annealing temperature. It abruptly increased as annealing temperature increased over 300$^{\circ}C$ in air atmosphere. From XRD, it is found that these results are due to the existence of NiO on film surface formed by annealing. As a results of them, TCR can be controlled by variation of sputter process parameter and annealing of thin film.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.34-36
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• 2015

Amorphous SiZnSnO(SZTO) thin film transistors(TFTs) have been fabricated by RF magnetron sputtering process, and they were annealed in air and in wet ambient. The electrical performance and the structure were analyzed by I-V measurement, XPS, AFM, and XRD. The results showed improvement in device performance by wet annealing process compared to air annealing treatment, because free electron was shown to be increased due to reaction of oxygen and hydrogen generating oxygen vacancy. This is understood by the generation of free electrons. We expect the wet annealing process to be a promising candidate to contributing to high electrical performance of oxide thin film transistors for backplane device applications.