• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 춘계학술발표대회 및 제14회 신소재 심포지엄
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• pp.28.1-28.1
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• 2008

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.69-69
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• 2009

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sh-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sh-doped Ge-Se-Te thin films.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.19.1-19.1
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• 2009

Phase change random access memory (PRAM)은 large sensing signal margin, fast programming speed, low operation voltage, high speed operation, good data retention, high scalability등을 가지는 가장 유망한 차세대 비휘발성 메모리이다. 현재 PRAM용 상변화 재료로는 주로 Ge2Sb2Te5가 사용되고 있지만 reset 전류가 높고 reliability 가 좋지 않아서 새로운 상변화 물질 연구가 필요하다. AgInSbTe (AIST)는 GST와 더불어 열에 의한 가역적 상변화를 하는 소재로 광기록 매체에서는 기록 속도가 빠르고 동작 특성이 우수하다는 특징이 있다. 본 연구에서는 XRD, 비저항측정등을 통해 온도에 따른 AIST의 물성 및 결정화 특성을 분석하고 나노 소자제작을 통해 그 전기적 특성을 평가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.15-18
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• 1996

The elemental segregation in the sputter-deposited AgInSbTe recording thin films was studied by means of Auger electron spectroscopy and ESCA for the specimens of as-deposited and as heat-treated conditions. Auger electron spectroscopy and ESCA revealed an extremely thin layer of elemental inhomogeneity, especially for the silver, even in as-deposited condition. The chemical analysis results obtained in this alloy system are discussed in terms of process parameters and target microstructure.

• 한국분말재료학회지
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• 제18권5호
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• pp.449-455
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• 2011

In this study, p-type $(AgSbTe_2)_{15}(GeTe)_{85}$: TAGS-85 compound powders were prepared by gas atomization process, and then their microstructures and mechanical properties were investigated. The fabricated powders were of spherical shape, had clean surface, and illustrated fine microstructure and homogeneous $AgSbTe_2$ + GeTe solid solution. Powder X-ray diffraction results revealed that the crystal structure of the TAGS-85 sample was single rhombohedral GeTe phase, which with a space group $R_{3m}$. The grain size of the powder particles increased while the micro Vickers hardness decreased with increasing annealing temperature within the range of 573 K and 723 K due to grain growth and loss of Te. In addition, the crystal structure of the powder went through a phase transformation from rhombohedral ($R_{3m}$) at low-temperature to cubic ($F_{m-3m}$) at high-temperature with increasing annealing temperature. The micro Vickers hardness of the as-atomized powder was around 165 Hv, while it decreased gradually to 130 Hv after annealing at 673K, which is still higher than most other fabrication processes.

• 정보저장시스템학회논문집
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• 제1권1호
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• pp.34-41
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• 2005

We report some recent results in the rewritable Blu-ray Disc with enhanced overwrite cyclability by using the growth dominant eutectic based Ge(Sb70Te30)+Sb recording layer, GeN interface layer and write strategy optimization. We have developed phase-change optical media with appropriate write strategy for 36(i.e., 1X)-72Mbps(i.e., 2X) dual speed Blu-ray Disc system and fur the future high speed optical data storage. For recording layer, eutectic-based Ge(Sb70Te30)+Sb material was used and Sb/Te ratio and Ge content were optimized to obtain proper erasability and archival stability of recorded amorphous marks. The recording layer is wrapped up in GeN interface layers to obtain overwrite cyclability and higher crystallization speed. In addition, we designed appropriate write strategy so called Time-Shifted Multipulse (TSMP) write strategy where starting position of multipulse parts are shined from reference clock. With this write strategy, the jitter characteristics of the disc was improved and we found that leading edge jitter was improved much more than trailing edge jitter in 1X-2X speed recording. Finally, we investigated the higher speed feasibility of 144Mbps(i.e., 4X) by adopting some elemental doping to the eutectic based Ag-In-Sb-Te recording layer and structural optimization of constitution layers in Blu-ray Disc. In the paper, we report the effect of Sn addition for the feasibility of higher speed recording. The addition of Sn shows increases of the crystallization speed of phase change recording layer.

• 자원환경지질
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• 제43권5호
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• pp.491-503
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• 2010

전남 해남군 모이산 금광상에서 지구화학적 특성에 대한 연구를 수행하기 위하여 모이산 지표 및 갱내, 대산 지표에서 채취한 총 140개 시료에 대한 지구화학분석결과를 상관분석, 요인분석 그리고 군집분석 등 다변수 통계처리 하였다. 상관분석 결과, 금의 함량이 100 ppb 미만인 비광화대와 100 ppb 이상인 광화대에서 동시에 금과 높은 상관관계를 가지는 원소는 Ag, Cu, Bi, Te 등이며, 이는 연구지역에서 수반되는 함금 은 광석광물들(엘렉트럼, 실바나이트, 칼라버라이트 및 스퉤자이트)과 기타광석광물들(황동석, 텔룰로비스무타이트 및 비스무시나이트)의 산출과 일치된 결과로 인지된다. Mo은 비광화대(0.269)에서 보다 광화대(0.615)에서 상대적으로 높은 상관계수를 가지므로 금광화작용에 의해 그 함량이 강하게 지배되고 있는 것으로 해석된다. Mn, Cs, Fe, Se 등은 비광화대에서는 금과 정의 상관관계를 가지지만 광화대에서는 음의 상관관계를 가지므로 금광화작용 시 모암으로부터 용탈되는 원소군으로 해석된다. Sb은 광화대에서 금과 높은 상관성을 보이지만 비광화대에서는 음의 상관관계를 가지므로 금광화작용 시 부화되는 원소로 지시될 수 있다. 요인분석결과, 비광화대에서 금의 함량에 영향을 받는 요인군에 속하는 원소는 Se, Ag, Cs, Te 등이며 이들은 연구지역 내 비광화대에서 금의 존재 여부를 알려줄 수 있는 원소로 해석될 수 있다. 반면 광화대에서는 Mo과 Te 등이 강하게 금광화작용의 여부를 지시해 주며, 금과 함께 수반되는 은광화작용의 여부를 지시해 줄 수 있는 원소는 Sb과 Cu 등으로 해석된다. 군집분석 결과 비광화대에서 Cd-Zn-Pb-S, Bi-Fe-Cu-Mn, Se-Te-Au-Cs-Ag, As-Sb-Ba 등이 유사한 거동을 보이는 원소군으로 나타나는 반면, 광화대에서는 Cd-Zn-Mn-Pb, Fe-S-Se, As-Bi-Cs, Ag-Sb-Cu, Au-Te-Mo 등이 유사한 거동을 보여주는 원소군으로 나타난다. 이상과 같은 지구화학분석 자료의 다변수 통계처리를 이용하여 금광화대와 비광화대의 산출광물의 거동 및 지구화학적 특성 차이의 비교가 가능하므로 추후 이러한 방법이 이와 유사한 유형의 광상탐사에 유용한 방법으로 적용될 수 있을 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.156-156
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• 2010

A detailed investigation and structure of tested samples are clearly presented. As a reference, $Ge_1Se_1Te_2$/As only sample was also investigated. We used compound of Ge-Se-Te material for phase-change cell. Actually, the performance properties have been improved surprisingly then conventional Ge-Sb-Te. However, crystallization time was as long as ever for amorphization time. We conducted this esperiment in order to solve that problem by doping-As with Ag layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.191-192
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• 2008

For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Ge-Se-Te and Ag/$Ge_1Se_1Te_2$ samples are fabricated and irradiated with He-Ne laser and DPSS laser to investigate a reversible phase change by light. Because of Ag ions, the Ag layer inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1285-1286
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• 2008

A detailed investigation and structure of tested samples are clearly presented. As a reference, $Ge_1Se_1Te_2/As$ only sample was also investigated. We used compound of Ge-Se-Te material for phase-change cell. Actually, the performance properties have been improved surprisingly then conventional Ge-Sb-Te. However, crystallization time was as long as ever for amorphization time. We conducted this experiment in order to solve that problem by doping-As with Ag layer.