• Journal of the Korean Society for Railway
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• v.15 no.6
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• pp.597-603
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• 2012

The cases for selecting contact materials of Ag and AgC for Bias Track Relay are the studies and their safety evaluations are proposed in this paper. The welding at the relative low current has occurred in Ag contacts, but the one has not occurred in AgC contacts although the high currents flow since it has an excellent temperature characteristic. In the repetitive switching experiment, more unstable resistance and transfer phenomena has occurred in contacts as the switching numbers of AgC contacts increase, which results in more consumption of contacts. In the experiments, there exists a trade off relationship between welding and resistance variation. AgC contacts have excellent characteristics in welding, but the caution is required in using them since a lot of repetition switching produces much resistance variation. However, Ag contacts have excellent characteristics in repetitive switching, but weak ones in welding.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.157-157
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• 2010

Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.112-114
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• 1988

W/WC-Cu/Ag contacts of 60wt%-40wt% base and contacts with additives(Ni, Co, C) of 1wt% below were prepared by a press-sinter-infiltrate process to compare with their physical properties and arc erosion characteristics. In physical properties, electrical conductivity of contacts with additive is lower than that of base contacts but hardness is higher. The results of arc test show that the erosion rate of contact with -0.1wt% Ni is decreased.

• Progress in Superconductivity
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• v.3 no.2
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• pp.198-212
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• 2002

The effects of reacted precursors on phase evolution, microstructure, $J_{c}$ and junctional characteristic of the inter-granular contacts were investigated in Ag-sheathed T1-1223 tapes prepared using three kinds of reacted precursors, and compared to those in the tape prepared using an unreacted precursor The precursors were prepared by heat-treating a mixture of Sr-Ba-Ca-Cu-O, $Tl_2$$O_3$, PbO and $Bi_2$$O_3$ powders at $805^{\circ}C$ (precursor I ), $840^{\circ}C$ (precursor II ) and $905^{\circ}C$(precursor III) for 20 min. Tl-1223 phase content, grain size and J\ulcorner in the tapes appeared to increase in an order of precursors I, II and III Compared to tapes prepared using an unreacted precursor, the tapes prewar ed using precursors II and III revealed reduced pore and impurity densities and an enhanced texture. Also characteristic of inter -granular contacts and fraction of strong-links were improved. The improved properties are attributed to enhanced densification resulting from using the reacted precursors.s.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.250-253
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• 2007

An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by anneal ing at $380{\sim}400^{\circ}C$ for $15{\sim}30$ min at $N_{2}$ gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at $380{\sim}400^{\circ}C$. The Ni plating solution is composed of a mixture of $NiCl_{2}$ as a main nickel source. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency solar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation. In this paper, we investigated low-cost Ni/Cu contact formation by electroless and electroplating for crystalline silicon solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.18-20
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• 2010

The mechanism for suppression of Ag agglomeration in Ag-Mg alloy ohmic contact to p-GaN is investigated. The Ag-Mg alloy ohmic contact shows low contact resistivity of $6.3\;{\times}\;10^{-5}\;{\Omega}cm^2$, high reflectance of 85.5% at 460 nm wavelength after annealing at $400^{\circ}C$ and better thermal stability than Ag contact The formation of Ga vacancies increase the net hole concentration, lowering the contact resistivity. Moreover, the oxidation of Mg atoms in Ag film increase the work function of Ag-Mg alloy contact and prevents Ag oxidation. The inhibition of oxygen diffusion by Mg oxide suppresses the Ag agglomeration, leading to enhance light reflectance and thermal stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.632-635
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• 2004

The purpose of this paper is to investigate the effect of arc current and contact velocity on the erosion of silver-based contact materials to be used in low voltage circuit breakers. The opening velocity during breaking, which is constant, ranges between 2m/s to 6m/s in the 415V $25kA_{rms}$. Contact erosion is evaluated by measuring the mass change of the cathode and anode. The results show that the increase in opening velocity from 2m/s to 6m/s leads to a decrease in the contact erosion. It is shown that the material transfer from one electrode to another depends on the transfer charge and the opening velocity of the contacts. The contact pairs of AgWC/AgCdO are superior to $AgWC/AgSnO_2In_2O_3$ or AgWC/AgC contact pairs in the contact erosion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.365-370
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• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.856-862
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• 1997

박막형 CdTe/CdS 태양전지의 배면전극(back contacts)물질로서 Cu도핑된 ZnTe 박막(ZnTe:Cu)을 전착법(electroplating)으로 제조하는 연구를 수행하였다. Sulfate계의 전해질 수용액에서 CdTe 기판과 투명전극으로 코팅된 유리(In$_{2}$O$_{3}$: Sn, ITO)기판 위에 ZnTe 박막을 코팅하는 방법으로써 potentiostat와 기판(cathode), Pt counter electrode, Ag/AgCI 표준전극으로 구성된 장치를 사용하여 pH=2.5-4, T=70-8$0^{\circ}C$, 0.02M $Zn^{2+}$ 1x$10^{-4}$M TeO$_{2}$, 0.2M $K_{2}$SO$_{4}$조건에서 -0.800 Vs~-0.975 V 범위의 전압(V$_{a}$ )에 걸쳐 실험하였다. ITO박막을 기판으로 사용하여 cyclic voltammogram을 작성한 결과 약 -0.50 V 에서 Te환원 peak이 나타났다. Auger electron spectroscopy (AES)로 조성분석한 결과 표면에서 Zn signal이 강하게 나왔고 시편의 두께에 따라 Zn의 signal감소하는 반면 Cd signal은 증가하는 것이 확인되었다. SEM 사진으로부터 ZnTe의 표면이 작은 입자 (0.2$\mu\textrm{m}$ 이하)로 구성되어 있으며 낮은 V$_{a}$ 에서는 입자가 작아지면서 조직이 치밀해짐이 관찰되었다. Optical transmission방법에 의하여 ITO기판위에 입혀진 박막의 밴드갭은 2.5 eV으로 측정되었다. 수용액중의 Cu$_{2+}$와 triethanolamine(TEA)은 산성용액에서 착물형성이 이루어지지 않았으며 1,10-phenanthroline과는 pH=2에서도 착물이 형성되었다.

• Economic and Environmental Geology
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• v.19 no.2
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• pp.109-122
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• 1986

Mn-Pb-Zn-Ag deposits of the Janggun mine are hosted in the Cambro-Ordovician Janggun limestone mostly along the contacts of the Jurassic Chunyang granite. The deposits are represented by several ore pipes and steeply dipping lenticular bodies consisting of lower Pb-Zn-Ag sulfide ores and upper manganese carbonate and oxide ores. The former consists mainly of arsenic, antimony, silver, manganese, and tin-bearing sulfides, whereas the latter are characterized by hypogene rhodochrosite, and superficial manganese oxides including todorokite, nsutite, pyrolusite, cryptomelane, birnesite and janggunite. Origin of the upper manganese ore deposits has been a controversial subject among geologists for this mine: hydrothermal metasomatic vs. syngenetic sedimentary origin. Syngenetic advocators have proposed a new sedimentary rock, rhodochrostone, which is composed mainly of rhodochrosite in mineralogy. In the present study, carbon, oxygen and sulfur isotopic compositions were analayzed obtaining results as follows: Rhodochrosite minerals, (Mn, Ca, Mg, Fe) $CO_3$, from hydrothermal veins, massive sulfide ores and replacement ores in dolomitic limestone range in isotopic value from -4.2 to -6.3‰ in ${\delta}^{13}C$(PDB) and +7.6 to +12.9‰ in ${\delta}^{18}O$(SMOW) with a mean value of -5.3‰ in ${\delta}^{13}C$ and +10.7‰ in ${\delta}^{18}O$. The rhodochrosite bearing limestone and dolomitic limestone show average isotopic values of -1.5‰ in ${\delta}^{13}C$ and +17.5‰ in ${\delta}^{18}O$, which differ from those of the rhodochrosite mentioned above. This implies that the carbon and oxygen in ore fluids and host limestone were not derived from an identical source. ${\delta}^{34}S$ values of sulfide minerals exhibit a narrow range, +2.0 to +5.0‰ and isotopic temperature appeared to be about $288{\sim}343^{\circ}C$. Calculated initial isotopic values of rhodochrosite minerals, ${\delta}^{18}O_{H_2O}=+6.6$ to +10.6‰ and ${\delta}^{13}C_{CO_2}=-4.0$ to -5.1 ‰, strongly suggest that carbonate waters should be deep seated in origin. Isotopic data of manganese oxide ores derived from hypogene rhodochrosites suggest that the oxygen of the limestone host rock rather than those of meteoric waters contribute to form manganese oxide ores above the water table.