• 한국표면공학회지
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• 제49권6호
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• pp.575-579
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• 2016

The metal mesh films with thickness of 1.0, 1.5, $2.0{\mu}m$ were prepared by photolithography using Ag, Al, and Cu metals. Every metal films were showed C(111) preferred orientation and Ag showed the lowest resistivity and followed by Al and Cu. The transmittance of almost films were higher than 90%. But, the Ag film with thickness of $2.0{\mu}m$ was delaminated during photolithography process due to low adhesion. So, Cu and Ti metal films were introduced under Ag film to improve adhesion property. The Cu film showed higher adhesion properties compared to Ti film. Furthermore, the Ti films that deposited on Ag film showed higher acid resistance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.125-125
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• 2011

In this study, we investigated the electrical, optical, structural, and surface properties of indium zinc oxide (IZO)/Ag/IZO multilayer electrode grown by specially designed roll-to-roll sputtering system using the flexible substrate. By the continuous roll-to-roll sputtering of the bottom IZO, Ag, and top IZO layers at room temperature, they were able to fabricate a high quality IZO/Ag/IZO multilayer electrode. At optimized conditions, the bottom IZO layer (40 nm) was deposited on a flexible substrate. After deposition of the Bottom IZO layer, Ag layer was deposited onto the bottom IZO film as a function of DC power (200~500 W). Subsequently, the top IZO layer was deposited onto the Ag layer at identical deposition conditions to the bottom IZO layer (40 nm). We investigated the characteristics of IZO/Ag/IZO multilayer electrode as a function of Ag thickness. It was found that the electrical and optical properties of IZO/Ag/IZO multilayer electrode was mainly affected thickness of the Ag layer at optimized condition. In case of IZO/Ag/IZO multilayer electrode with the Ag power (350W), it exhibited a low sheet resistance of 7.1 ohm/square and a high transparency of 86.4%. Furthermore, we fabricated the touch screen panel using the IZO/Ag/IZO multilayer electrode, which demonstrate the possibility of the IZO/Ag/IZO multilayer electrode grown by roll-to-roll sputtering system as a transparent conducting layer in the touch screen panel.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2002년도 추계학술발표회요약집
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• pp.72.1-72
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• 2002

• 한국분말재료학회지
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• 제13권1호
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• pp.18-24
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• 2006

The brazing adhesion properties of Ag coated W-Ag electric contact on the Cu substrate have been investigated in therms of microstructure, phase equilibrium and adhesion strength. Precoating of Ag layer ($3{\mu}m$ in thickness) on the $W-40\%Ag$ contact material was done by electro-plating method. Subsequently the brazing treatment was conducted by inserting BCuP-5 filler metal (Ag-Cu-P alloy) layer between Ag coated W-Ag and Cu substrate and annealing at $710^{\circ}C$ in $H_2$ atmosphere. The optimum brazing temperature of $710^{\circ}C$ was semi-empirically calculated on the basis of the Cu atomic diffusion profile in Ag layer of commercial electric contact produced by the same brazing process. As a mechanical test of the electric contact after brazing treatment the adhesion strength between the electric contact and Cu substrate was measured using Instron. The microstructure and phase equilibrium study revealed that the sound interlayer structure was formed by relatively low brazing treatment at $710^{\circ}C$. Thin Ag electro-plated layer precoated on the electric contact ($3{\mu}m$ in thickness) is thought to be enough for high adhesion strength arid sound microstructure in interface layer.

• 반도체디스플레이기술학회지
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• 제18권3호
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• pp.19-24
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• 2019

In this study, the Ag nano-dots structure was applied to the textured wafer surface to improve the light trapping effect of crystalline silicon solar cell. The Ag nano-dots structure was formed by the annealing of Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The effect of light trapping was compared and analyzed through light reflectance measurements. The optimization process of the Ag nano-dots structure was made by varying the thickness of Ag thin film, the annealing temperature and time. The thickness of Ag thin films was in the range of 5 ~ 20 nm. The annealing temperature was in the range of 450~650℃ and the annealing time was in the range of 30 ~ 60 minutes. As a result, the light reflectance of 10 nm Ag thin film annealed at 650℃ for 30 minutes showed the lowest value of about 9.67%. This is a value that is about 3.37% lower than the light reflectance of the sample that has undergone only the texturing process. Finally, the change of the light reflectance by the HF treatment of the sample on which the Ag nano-dots structure was formed was investigated. The HF treatment time was in the range of 0 ~ 120 seconds. As a result, the light reflectance decreased by about 0.41% due to the HF treatment for 75 seconds.

• 대한금속재료학회지
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• 제50권12호
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• pp.931-937
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• 2012

The microstructure of Cu-15 wt%Ag composites fabricated by equal channel angular pressing (ECAP) with intermediate heat treatment at $320^{\circ}C$ was investigated by transmission electron microscopy (TEM) observations. Ag precipitates with a thickness of 20-40 nm were observed in the eutectic region of the Cu-15 wt%Ag composite solution treated at $700^{\circ}C$ before ECAP. The Cu matrix and Ag precipitates had a cube on cube orientation relationship. ECAPed composites exhibited ultrafine-grained microstructures with the shape and distribution dependent on the processing routes. For route A in which the sample was pressed without rotation between each pass, the Cu and Ag grains were elongated along the shear direction and many micro-twins were observed in elongated Cu grains as well as in Ag filaments. The steps were observed on coherent twin boundaries in Cu grains. For route Bc in which the sample was rotated by 90 degrees after each pass, a subgrain structure with misorientation of 2-4 degree by fragmentation of the large Cu grains were observed. For route C in which the sample was rotated by 180 degrees after each pass, the microstructure was similar to that of the route A sample. However, the thickness of the elongated grains along the shear direction was wider than that of the route A sample and the twin density was lower than the route A sample. It was found that more microtwins were formed in ECAPed Cu-15 wt%Ag than in the drawn sample. Grain boundaries were observed in relatively thick and long Ag filaments in Cu-15 wt%Ag ECAPed by route C, indicating the multi-crystalline nature of Ag filaments.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년 추계학술발표대회 개요집
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• pp.169-171
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• 2006

Solderability and reaction properties were investigated for four Pb-free alloys as a function of Ag contents; Sn-4.0Ag-0.5Cu, Sn-3.0Ag-0.5Cu, Sn-2.5Ag-0.5Cu, and Sn-1.0Ag-0.5Cu. The alloy of the lowest Ag content, i.e., Sn-1.0Ag-0.5Cu, showed poor wetting properties as the reaction temperature decreased to 230oC. Variation of Ag concentration in the Sn-xAg-0.5Cu alloy shifted exothermic peaks indicating the undercooling temperature in DSC curve. For the aging process at 170oC, the thickness of IMCs at the board-side solder/Cu interface increased with the Ag concentration.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권8호
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• pp.387-391
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• 2006

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

• 대한전자공학회논문지
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• 제10권6호
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• pp.56-61
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• 1973

압전 결정 LiNbO3에서 탄성표면파(Rayleigh 표면파)의 온도계수가 가장 작은 131° 로테이트 Y캇트의 전반로에 Ag와 Pd를 증착하여 증착막의 두께에 따른 위상속도의 변화와 위상속도의 온도계수의 변화를 수치해석방법에 의하여 계산하였다. 계산한 결과 Ag의 경우는 증착막의 두께가 증가함에 따라 온도계수가 급격히 증가하나 Pd의 경우는 증가와 감소의 불규칙성을 보이며 wh=9000에서 -36×10 /℃의 위상속도의 온도계수의 최소치를 얻었다.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.539-544
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• 2013

$Ag@SiO_2@SiO_2$(FITC) nanocomposites were prepared by the simple polyol process and St$\ddot{o}$ber method. Fluorescence enhancement of fluorescein moiety (fluorescein isothiocyanate, FITC) was investigated in the presence of silver nanoparticles in $Ag@SiO_2@SiO_2$(FITC) system with varying thickness (X nm) of first silica shell. Maximum enhancement factor of 4.3 fold was achieved in $Ag@SiO_2@SiO_2$(FITC) structure with the first silica shell thickness of 8 nm and the average separation distance of 11 nm between the surface of silver nanoparticle and fluorescein moiety. The enhancement is believed to be originated from increased excitation rate of fluorescein moiety due to concentrated local electromagnetic field which was improved by interaction of light with silver nanoparticles.