• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.197-197
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• 2009

We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

• Journal of Magnetics
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• v.4 no.3
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• pp.92-97
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• 1999

A relationship between microstructure and ferromagnetic resonance of Co/Ag multilayers has been studied in as-deposited and annealed multilayers iwth ultrathin (dCo < 1 nm) Co layers. Depending on the nominal thickness of Co Co/Ag multilayers represent a system of fine magnetic particles (dCo < 0.4 nm) or discontionuous layered structure (dCo/0.5 nm). FMR data has been interpreted in the framework of a odel of interacting fine particles exhibiting superparamagnetic behavior. Changes in the FMR spectra upon annealing have been attributed to the growth of the Co particles and to a transition from the fcc to hcp atomic structure of the highly (111) textured Co particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.75-78
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• 2003

In recent years, there has been keen interest in developing flat panel detectors for all modalities of radiology, including gerneral radiology, fluoroscopy, electronic portal imaging, and mammography. In this paper, we report the new hybrid x-ray detector consisted of ZnS(Ag) photoemission layer and a-Se photoconductor layer to resolve problem of conventional x-ray detector such as the direct detector and the indirect detector. To design the structure of ZnS(Ag)/a-Se detector, the penetrated energy spectrum and absorption fraction was estimated using MCNP 4C code. Also, we carried out the experiment to demonstrate the result of MCNP 4C code. Experimental results showed that the absorption fraction of $500{\mu}m$-ZnS(Ag) film was above 87%, 75% at 60 and 80 kVp. As a results, we can determined the thickness of suitable phosphor and the thickness of photoconductor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.323-324
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• 2009

We investigated the electrical properties of tris-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistors (OTFTs) employing Ni/Ag source/drain electrodes. The gap height between the gate insulator and S/D electrode was controlled by changing the thickness of Ag under-layer(20, 30, 40 and 50nm). After evaporating the Ni under-layer, TIPS pentacene channel material was dropping the gap between the gate insulator and SID electrodes. The electrical proprieties of OTFT such as filed-effect mobility, on/off ratio, threshold voltage and subthreshold slope were significantly influenced by the gap height.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.345-346
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• 2008

We have studied an emission spectra of top-emssion organic light-emitting diodes(TEOLED) due to a change of cathode and organic layer thickness. Device structure is Al(100nm)/TPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/cathode. And two different types of cathode were used; one is LiF(0.5nm)/Al(25nm) and the other is LiF(0.5nm)/Al(2nm)/Ag(30nm). While a thickness of hole-transport layer of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm for two devices. A ratio of those two layer was kept to be about 2:3. Al and Al/Ag double layer cathode devices show that the emission spectra were changed from 490nm to 560nm and from 490nm to 560nm, respectively, when the total organic layer increase. Full width at half maximum was changed from 67nm to 49nm and from 90nm to 35nm as the organic layer thickness increases. All devices show that view angle dependent emission spectra show a blue shift. Blue shift is strong when the organic layer thickness is more than 140nm. Devece with Al/Ag double layer cathode is more vivid.

• Bulletin of the Korean Chemical Society
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• v.34 no.10
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• pp.2865-2870
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• 2013

Ni-Ag core-shell nanoparticles were synthesized by polyol process and microemulsion technique successfully. In the polyol process, a chemical reduction method for preparing highly dispersed pure nickel and Ag shell formation have been reported. The approach involved the control of reaction temperature and reaction time in presence of organic solvent (ethylene glycol) as a reducing agent for Ag cation with poly(vinyl-pyrrolidone) (PVP. Mw = 40000) as a capping agent. In microemulsion method, the emulsion was prepared by water/cetyltrimetylammonium bromide (CTAB)/cyclohexane. The size of microemulsion droplet was determined by the molar ratio of water to surfactant (${\omega}_o$). The core-shell formation along with the change in structural phase and stability against oxidation at high temperature heat treatments of nanoparticles were investigated by X-ray diffraction and TEM analysis. Under optimum conditions the polyol process gives the Ni-Ag core-shell structures with 13 nm Ni core covered with 3 nm Ag shell, while the microemulsion method gives Ni core diameter of 8 nm with Ag shell of thickness 6 nm. The synthesized Ni-Ag core-shell nanoparticles were stable against oxidation up to $300^{\circ}C$.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.18-23
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• 2003

Properties of Ag thick films fabricated by using low temperature curable silver pastes were investigated. Ag pastes were consisted of polymer resins and silver powders. Ag pastes were used for conductive or fixing materials between board and various electrical and electronic devices. Low temperature curable Ag pastes have some advantages over high temperature curable types. In cases of chip mounting, soldering properties were required for screen printed Ag thick films. In this study, four types of Ag pastes were fabricated with different compositions. Screen printed Ag thick films on alumina substrates were fabricated at various curing temperatures and times. Thickness, resistivity, adhesive strength and solderability of fabricated Ag thick films were characterized. Finally, Ag thick films produced using Ag pastes, sample A and B, cured at $150^{\circ}C$ for longer than 6 h and $180^{\circ}C$ for longer than 2 h, and $150^{\circ}C$ for longer than 1 h and $180^{\circ}C$ for 1 h, respectively, showed low resistivities of $10^{-4}$ $∼10^{-5}$ Ωcm and good adhesive strength of 1∼5 Mpa. Soldering properties of those Ag thick films with curing temperatures at solder of 62Sn/36Pb/3Ag were also investigated.

• Transactions of the Korean Society of Automotive Engineers
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• v.21 no.1
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• pp.145-153
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• 2013

In this study, shear punch-creep (SP-Creep) at Sn-4Ag/Cu pad the joint was tested by using environment-friendly Pb-free solder alloy Sn-4Ag of electronic components. Pb eutectic alloy (Sn-37Pb) joints limited to environmental issues with reflow time (10sec, 30sec, 100sec, 300sec) according to two types of solder alloy joints are compared and evaluated by creep strain rate, rupture time and IMC (Intermetallic Compound) behavior. As the results, reflow time increases with increasing thickness of IMC can be seen at overall 100sec later in case of two solder joints on the IMC thickness of Sn-4Ag solder joints thicker than Sn-37Pb solder joints. In addition, when considering creep evaluation factors, lead-free solder alloy Sn-4Ag has excellent creep resistance more than Pb eutectic alloy. For this reason, the two solder joints, such as in the IMC (Cu6Sn5) was formed. However, the creep resistance of Sn-4Ag solder joints was largely increased in the precipitation strengthening effect of dispersed Ag3Sn with interface more than Sn-37Pb solder joints.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.140-148
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• 1995

Optical properties of $TiO_{2}$. Ag filrns and $TiO_{2}/Ag/TiO_{2}$ multilayer filrns with different thickness were predicted using the transfer matrix, and these results were compared with real transmittance curves of the sputterdeposited films. With the complex refractive indices, it was possible to predict transmittance characteristics which were close to real data for $TiO_{2}$ and Ag films. Due to the diffusion and agglomeration of Ag during $TiO_{2}$ deposition, optical properties of the sputterdeposited $TiO_{2}/Ag/TiO_{2}$ films were found to be very different from the transmittance curves predicted using the transfer matrix. Using deposition of 4nm-thick or 6nm-thick TI layers as a diffusion barrier, however, the transmittance curves of $TiO_{2}/Ti/Ag/Ti/TiO_{2}$ five-layer films became similar to ones predicted for $TiO_{2}/Ag/TiO_{2}$ threeiayer films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.290-291
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• 2006

We prepared the multilayer with Al doped ZnO (AZO)/Ag/AZO structure. The multilayer were deposited with various thickness of Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. To investigate the electrical, optical and structural properties, we used Hall Effect measurement system, four-point probes. UV-VIS spectrometer with a wavelength of 300 - 100nm, X-ray Diffractometer(XRD) and scanning electron microscopy (SEM). We obtained multilayer thin film with the low resistivity $5,9{\times}10^{-5}{\Omega}cm$ and the average transmittance of 86% m the visible range (400 - 800nm).