• Title/Summary/Keyword: Ag sinter

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Bonding Temperature Effects of Robust Ag Sinter Joints in Air without Pressure within 10 Minutes for Use in Power Module Packaging

  • Kim, Dongjin;Kim, Seoah;Kim, Min-Su
    • Journal of the Microelectronics and Packaging Society
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    • v.29 no.4
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    • pp.41-47
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    • 2022
  • Ag sintering technologies have received great attention as it was applied to the inverter of Tesla's electric vehicle Model III. Ag sinter bonding technology has advantages in heat dissipation design as well as high-temperature stability due to the intrinsic properties of the material, so it is useful for practical use of SiC and GaN devices. This study was carried out to understand the sinter joining temperature effect on the robust Ag sintered joints in air without pressure within 10 min. Electroplated Ag finished Cu dies (3 mm × 3 mm × 2 mm) and substrates (10 mm × 10 mm × 2 mm) were introduced, respectively, and nano Ag paste was applied as a bonding material. The sinter joining process was performed without pressure in air with the bonding temperature as a variable of 175 ℃, 200 ℃, 225 ℃, and 250 ℃. As results, the bonding temperature of 175 ℃ caused 13.21 MPa of die shear strength, and when the bonding temperature was raised to 200 ℃, the bonding strength increased by 157% to 33.99 MPa. When the bonding temperature was increased to 225 ℃, the bonding strength of 46.54 MPa increased by about 37% compared to that of 200 ℃, and even at a bonding temperature of 250 ℃, the bonding strength exceeded 50 MPa. The bonding strength of Ag sinter joints was directly influenced by changes in the necking thickness and interfacial connection ratio. In addition, developments in the morphologies of the joint interface and porous structure have a significant effect on displacement. This study is systematically discussed on the relationship between processing temperatures and bonding strength of Ag sinter joints.

A Study on the Microstructure and Properties of Y-BA-Cu-O/Ag composite High $T_{c}$ Superconductor prepared by Sinter-forging Process (Sinter forging으로 제조한 Y-BA-Cu-O/Ag 고온 초전도 복합체의 미세조직과 특성)

  • Park, Jong-Hyeon;Kim, Byeong-Cheol;Song, Jin-Tae
    • Korean Journal of Materials Research
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    • v.4 no.1
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    • pp.37-43
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    • 1994
  • Y-Ra-Cu-0 oxide superconductors were fabricated by the sinter-forging method to make the critical current density improve through controlling of microstructure and crystal texture. The grain alignment of oxide superconductor was formed by the sinter-forging process and it's c-axis orientation was parallel to the press direction.The orientation factor of texture increased with sinking temperature and pressure, and also grain alignment was improved by the addition of Ag. As for the sinterforged Y-Ba-Cu-O/Ag sample, the $T_c$(on-set) was not almost varied with the sinter-forging temperature, but $T_c\;^{zero}$ decreased more or less at high sinter-forging temperatures. In addition, it was observed that added-Ag was mainly distributed along the grain boundar~es in the (123) matrix, resulting in the densification of microstructure. From these results, i t was thought that the improvement of $J_c$ over 2000A/$\textrm{cm}^2$ was attributed to the texture, densification of microstructure, and (123) grain growth due to the Ag addition.

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Effect of additives on the electrical properties of W/WC contacts (W/WC계 접점의 전기적 특성에 미치는 첨가물의 영향)

  • 신대승;이희웅;변우봉;한세원
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1988.10a
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    • pp.112-114
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    • 1988
  • W/WC-Cu/Ag contacts of 60wt%-40wt% base and contacts with additives(Ni, Co, C) of 1wt% below were prepared by a press-sinter-infiltrate process to compare with their physical properties and arc erosion characteristics. In physical properties, electrical conductivity of contacts with additive is lower than that of base contacts but hardness is higher. The results of arc test show that the erosion rate of contact with -0.1wt% Ni is decreased.

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Ag Sintering Die Attach Technology for Wide-bandgap Power Semiconductor Packaging (Wide-bandgap 전력반도체 패키징을 위한 Ag 소결 다이접합 기술)

  • Min-Su Kim;Dongjin Kim
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.1
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    • pp.1-16
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    • 2023
  • Recently, the shift to next-generation wide-bandgap (WBG) power semiconductor for electric vehicle is accelerated due to the need to improve power conversion efficiency and to overcome the limitation of conventional Si power semiconductor. With the adoption of WBG semiconductor, it is also required that the packaging materials for power modules have high temperature durability. As an alternative to conventional high-temperature Pb-based solder, Ag sintering die attach, which is one of the power module packaging process, is receiving attention. In this study, we will introduce the recent research trends on the Ag sintering die attach process. The effects of sintering parameters on the bonding properties and methodology on the exact physical properties of Ag sintered layer by the realization 3D image are discussed. In addition, trends in thermal shock and power cycle reliability test results for power module are discussed.