• Title/Summary/Keyword: Ag nanowires

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Fabrication of flexible sponge electrodes using Ag nanowires (은나노와이어 함침 유연 스펀지 전극 제조)

  • Park, Kyoung Ryeol;Yoo, Sehoon;Ryu, Jeong Ho;Mhin, Sungwook
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.5
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    • pp.189-193
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    • 2020
  • Recently, various methods for preparing a flexible electrode for implementing a wearable sensor have been introduced. Wearable sensors show similar tendency to use various polymer substrates, which provides elasticity suitable to the motion of human body. In this paper, a highly elastic silver nanowire based electrode was prepared on a sponge-based stretchable substrate, and electrical properties were evaluated. Silver nanowires were grown using a wet chemical synthesis, impregnated into a plasma-treated sponge, and then heat treated at a low temperature. In particular, the plasma surface treatment of the sponge enables uniform coating of silver nanowires. The flexible sponge electrode showed reliable electrical resistance changes over 160 repeated tensile-compression cycles.

Enhanced Infrared detection of photodetector using Ag nanowire-embedded ITO Layers

  • Kim, Hong-Sik;Kim, Jun-Dong;Patel, Malkeshkumar;Kim, Ja-Yeon;Gwon, Min-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.244.1-244.1
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    • 2015
  • The Ag Nanowire is one of the materials that are widely studied as alternatives to ITO and is available for large area, low cost process and the flexible transparent electrode. However, Ag nanowire can have the problem of a lack of stability at high temperatures, making this impossible to form a film. Using a structure of ITO/AgNW/ITO in photodetector device, we improved the properties of the ITO in the IR region and improved the thermal stability of the AgNW. The structure of ITO/AgNW/ITO has a high transmittance value of 89% at a wavelength of 900 nm and provide a good electrical property. The AgNWs embedded ITO film has a high transmittance, this is because of the light scattering from the AgNW. The thermal stability of the developed ITO/AgNWs/ITO films were investigated and found AgNWs embedded ITO films posses considerable high stability compared to the solo AgNWs on the Si surface. The ITO/AgNWs/ITO device showed a improved photo-response ratio compared to those of the conventional TC device in IR region. This is attributed to the high transmittance and low sheet resistance. We suggest an effective design scheme for IR-sensitive photodetection by using an AgNW embedded ITO.

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Improving Conductivity of Metal Grids by Controlling Sintering Process (배선 함몰 전극의 배선 소결공정 최적화에 따른 전기적 특성 향상)

  • Ahn, Wonmin;Jung, Sunghoon;Kim, Do-Geun
    • Journal of the Korean institute of surface engineering
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    • v.48 no.4
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    • pp.158-162
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    • 2015
  • To substitute indium tin oxide (ITO), many substituents have been studied such as metal nanowires, carbon based materials, 2D materials, and conducting polymers. These materials are not good enough to apply to an electrode because theses exhibit relatively high resistance. So metal grids are required as an additionalelectrode to improve the conductivities of substituents. The metal grids were printed by electrohydrodynamic printing system using Ag nanoparticle based ink. The Ag grids showed high uniformity and the line width was about $10{\mu}m$. The Ag nanoparticles are surrounded by dispersants such as unimolecular and polymer to prevent aggregation between Ag nanoparticles. The dispersants lead to low conductivity of Ag grids. Thus, the sintering process of Ag nanoparticles is strongly recommended to remove dispersants and connect each nanoparticles. For sintering process, the interface and microstructure of the Ag grid were controlled in 1.0 torr Ar atmosphere at aound $400^{\circ}C$ of temperature. From the sintering process, the uniformity of the Ag grid was improved and the defects on the Ag grids were reduced. As a result, the resistivity of Ag grid was greatly reduced up to $5.03({\pm}0.10){\times}10^{-6}{\Omega}{\cdot}cm$. The metal grids embedded substrates containing low pressure Ar sintered Ag grids showed 90.4% of transmittance in visible range with $0.43{\Omega}/{\square}$ of sheet resistance.

Fabrication of Double Textured Selective Emitter Si Solar Cell Usning Electroless Etching Process (이중 텍스쳐 구조를 적용한 선택적 에미터 태양전지의 특성 분석)

  • Kim, Changheon;Lee, Jonghwan;Lim, Sangwoo;Jeong, Chaehwan
    • Current Photovoltaic Research
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    • v.2 no.3
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    • pp.130-134
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    • 2014
  • We have fabricated the selective emitter solar cell using double textured nanowires structure. The $40{\times}40mm2$-sized silicon substrates were textured to form the pyramid-shaped surface and the nanowires were fabricated by metal assisted chemical etching process using Ag nanoparticles, subsequently. The heavily doped and shallow emitters for selectiv eemitter solar cells were prepared through the thermal $POCl_3$ diffusion and chemical etch-back process, respectively. The front and rear electrodes were prepared following conventional screen printing method and the widths of fingers have been optimized. The selective emitter solar cell using double textured nanowires structure achieved a conversion efficiency of 17.9% with improved absorption and short circuit current density.

Suppressed Sheet Resistance of Ag Nanostructure Films by O2 Plasma Treatment (O2 플라즈마 처리를 통한 Ag 나노구조체 필름의 면저항 저감)

  • Kim, Wonkyung;Roh, Jong Wook
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.3
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    • pp.37-41
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    • 2019
  • Sheet resistance reduction in the Ag nanowire (NW) coated films is accomplished with slight improvement of optical properties for the application of transparent conducting electrodes by using $O_2$ plasma treatment. The sheet resistance was optimized after 30 seconds $O_2$ plasma treatment, showing the 27 % of maximum decrease of sheet resistance. It is found that the $O_2$ plasma treatment get rid of the residual organic materials at the junction of Ag NWs. However, the Ag NWs may be also snapped by the excessive $O_2$ plasma treatment can showing the collapses of Ag NWs networks. Furthermore, the optical properties such as optical transmittance and haze were monotonically improved with the $O_2$ plasma treatment time until 90 seconds.

Electrical and Optical Properties of F-Doped SnO2 Thin Film/Ag Nanowire Double Layers (F-Doped SnO2 Thin Film/Ag Nanowire 이중층의 전기적 및 광학적 특성)

  • Kim, Jong-Min;Koo, Bon-Ryul;Ahn, Hyo-Jin;Lee, Tae-Kun
    • Korean Journal of Materials Research
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    • v.25 no.3
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    • pp.125-131
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    • 2015
  • Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

CdSe Quantum Dot based Transparent Light-emitting Device using Silver Nanowire/Ga-doped ZnO Composite Electrode (AgNWs/Ga-doped ZnO 복합전극 적용 CdSe양자점 기반 투명발광소자)

  • Park, Jehong;Kim, Hyojun;Kang, Hyeonwoo;Kim, Jongsu;Jeong, Yongseok
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.4
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    • pp.6-10
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    • 2020
  • The silver nanowires (AgNWs) were synthesized by the conventional polyol process, which revealed 25 ㎛ and 30 nm of average length and diameter, respectively. The synthesized AgNWs were applied to the CdSe/CdZnS quantum dot (QD) based transparent light-emitting device (LED). The device using a randomly networked AgNWs electrode had some problems such as the high threshold voltage (for operating the device) due to the random pores from the networked AgNWs. As a method of improvement, a composite electrode was formed by overlaying the ZnO:Ga on the AgNWs network. The device used the composite electrode revealed a low threshold voltage (4.4 Vth) and high current density compared to the AgNWs only electrode device. The brightness and current density of the device using composite electrode were 55.57 cd/㎡ and 41.54 mA/㎠ at the operating voltage of 12.8 V, respectively, while the brightness and current density of the device using (single) AgNWs only were 1.71 cd/㎡ and 2.05 mA/㎠ at the same operating voltage. The transmittance of the device revealed 65 % in a range of visible light. Besides the reliability of the devices was confirmed that the device using the composite electrode revealed 2 times longer lifetime than that of the AgNWs only electrode device.

Comparison of Optical Properties of Ga-doped and Ag-doped ZnO Nanowire Measured at Low Temperature

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.5
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    • pp.262-264
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    • 2014
  • Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

Fabrication of Stretchable Ag Nanowire Electrode and its Electrochromic Application (신축성있는 Ag 나노와이어 전극의 제조 및 전기변색 응용)

  • Lee, Jin-Young;Han, Song-Yi;Nah, Yoon-Chae;Park, Jongwoon
    • Korean Journal of Materials Research
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    • v.29 no.2
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    • pp.87-91
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    • 2019
  • We report on stretchable electrochromic films of poly(3-hexylthiophene) (P3HT) fabricated on silver nanowire (AgNW) electrodes. AgNWs electrodes are prepared on polydimethylsiloxane (PDMS) substrates using a spray coater for stretchable electrochromic applications. On top of the AgNW electrode, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is introduced to ensure a stable resistance over the electrode under broad strain range by effectively suppressing the protrusion of AgNWs from PDMS. This bilayer electrode exhibits a high performance as a stretchable substrate in terms of sheet resistance increment by a factor of 1.6, tensile strain change to 40 %, and stretching cycles to 100 cycles. Furthermore, P3HT film spin-coated on the bilayer electrode shows a stable electrochromic coloration within an applied voltage, with a color contrast of 28.6 %, response time of 4-5 sec, and a coloration efficiency of $91.0cm^2/C$. These findings indicate that AgNWs/PEDOT:PSS bilayer on PDMS substrate electrode is highly suitable for transparent and stretchable electrochromic devices.