• 한국초전도ㆍ저온공학회논문지
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• 제19권2호
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• pp.25-28
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• 2017

In superconducting coil applications particularly in wet wound coils, coated conductor (CC) tapes are subjected to different type of stresses that could affect its electromechanical transport property. These include hoop stress acting along the length of the CC tape and the Lorentz force acting perpendicular to the CC tape's surface. Since the latter is commonly associated with the delamination problem of multi-layered REBCO CC tapes, more understanding and attention on the delamination phenomena induced in the case of coil applications are needed. Difference on the coefficient of thermal expansion (CTE) of each constituent layer of the CC tape, the bobbin, and the impregnating materials is the main causes of delamination in CC tapes when subjected to thermal and mechanical cycling. In the design of degradation-free superconducting coils, therefore, characterization of the delamination behaviors including mechanism and strength in the multi-layered REBCO CC tapes becomes a critical issue. Various trials to increase the delamination strength by improving interface characteristics at interlayers have been performed. In this study, in order to investigate the influences of laser cleaning and Ag annealing treated at the substrate side surface, transverse tensile tests were conducted under different sample configurations using $4.5mm{\times}8mm$ upper anvil. The mechanical delamination strength of differently processed CC samples was examined at room temperature (RT). As a result, the Sample 1 with the additional laser cleaning and Ag annealing processes and the Sample 2 with additional Ag annealing process only showed higher mechanical delamination strength as compared to the Sample 3 without such additional treatments. Sample 3 showed quite different behavior when the loading direction is to the substrate side where the delamination strength much lower as compared to other cases.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 추계 기술심포지움 논문집
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• pp.57-57
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• 2000

본 논문에서는 MCM 및 패키지의 Lid로 사용되는 합금인 Kovar (Fe-Ni-Co alloy) 와 LTCC (Low Temperature Co-fired Ceramics) 간의 Brazing 특성을 연구하였다. 기존에 사용되고 있는 알루미나 패키지의 경우, 주로 80$0^{\circ}C$ 이상의 온도에서 Brazing을 실시하고 있으며, 조성은 Ag-Cu 계열을 사용하고 있다. 하지만, LTCC 의 경우, 소결온도가 85$0^{\circ}C$ 내외로서 기존의 방법을 그대로 적용하기는 어려움이 있다. 또한 Brazing 특성에 따른 접착 강도는 Brazing Alloy 의 영향뿐만 아니라 LTCC 와 전도체 전극사이의 Metallization 에 크게 영향을 받는다. 따라서, 본 논문에서는 Brazing Alloy의 종류 (Ag-Cu, Au-Sn) 및 Brazing 조건에 따른 Brazing 특성뿐만 아니라, 전도체 전극내 유리질 함량에 따른 Brazing 특성을 평가하여 LTCC/Kovar 간의 최적의 Brazing 조건을 구현하고자 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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• pp.38-41
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• 2003

상업용 Ag 판재 위에 cyclic 전위와 일정 전위를 인가하는 전기증착법으로 Tl-1223상 precursor 막을 증착하는 연구를 수행한 다음, 이를 이영역 전기로를 사용하여 열처리함으로써 고온초전도 coated conductors를 제조하는 연구를 수행하였다. 전기증착법으로 비교적 균질하고 치밀한 precursor막을 증착할 수 있었으며, 이 막을 $870^{\circ}C$에서 20분 동안 열처리하여 임계온도가 114 K이고 자속고정능력도 비교적 우수한 50%의 Tl-1223상과 50%의 Tl-1212상으로 구성된 고온초전도 도체를 제조할 수 있었다. 이로부터 아주 값싼 증착법인 전기증착법을 이용하여 후막의 고온초전도 도체를 제조할 수 있음을 증명하였다.

• E2M - 전기 전자와 첨단 소재
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• 제9권9호
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• pp.900-905
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• 1996

We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제49권4호
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• pp.240-245
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• 2000

The self-field losses in a long multifilamentary Bi-2223/AgMgNi tape with varying transport current, voltage tap configurations, frequency and tape arrangements were investigated. Experimental results show that the measured losses are strongly dependent on voltage gap configurations but independent on tape arrangements. All voltage taps except the center tap are found to agree well with those predicted by Norris for an elliptical conductor. The self-field losses are purely hysteretic in nature in the range of applied frequencies for the transport currents below the critical current.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.18.2-18.2
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• 2010

For the past a few years, we have intensively researched the printable inorganic conductors and ZnO-based amorphous oxide semiconductors (AOSs) for thin-film transistors. For printable conductor materials, we have focused on the aqueous Ag and Cu ink which possess a variety of advantages, comparing with the conventional metal inks based on organic solvent system. The aqueous Ag ink was designed to achieve the long-term dispersion stability using a specific polymer which can act as a dispersant and capping agent, and the aqueous Cu ink was carefully formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. For printable ZnO-based AOSs, we have researched the noble way to resolve the critical problem, a high processing-temperature above $400^{\circ}C$, and recently discovered that Ga doping in ZnO-based AOSs promotes the formation of oxide lattice structures with oxygen vacancies at low annealing-temperatures, which is essential for acceptable thin-film transistor performance. The mobility dependence on annealing temperature and AOS composition was analyzed, and the chemical role of Ga are clarified, as are requirements for solution-processed, low-temperature annealed AOSs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.590-590
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• 2012

A transparent conducting oxide (TCO) layer was applied in crystalline Si (c-Si) solar cells without use of the conventional SiNx-coating. A high quality indium-tin-oxide (ITO) layer was directly deposited on an emitter layer of a Si wafer. Three different types of emitters were formed by controlling the phosphorous diffusion condition. A light-doped emitter forming a thinner emitter junction showed an improved photoconversion efficiency of 14.1% comparing to 13.2% of a heavy-doped emitter. This was induced by lower recombination within a narrower depletion region of the light-doped emitter. In the aspect of light management, the intermediate refractive index of ITO is effective to reduce the light reflection leading the enhanced carrier generation in a Si absorber. For the electrical aspect, the ITO layer serves as an efficient electrical conductor and thus relieves the burden of high contact resistance of the light-doped emitter. Additionally, the ITO works as a buffer layer of Ag and Si and certainly prevents the shunting problem of Ag penetration into Si emitter region. It discusses an efficient design scheme of TCO-embedded emitter Si solar cells.

• Nano
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• 제13권12호
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• pp.1850146.1-1850146.9
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• 2018

The rapid development of smart textiles requires the large-scale fabrication of conductive fibers. In this study, we develop a simple, scalable and low-cost capillary-driven self-assembly method to prepare conductive fibers with uniform morphology, high conductivity and good mechanical strength. Fiber-shaped flexible and stretchable conductors are obtained by coating highly conductive and flexible silver nanowires (Ag NWs) on the surfaces of yarn and PDMS fibers through evaporation-induced flow and capillary-driven self-assembly, which is proven by the in situ optical microscopic observation. The density of Ag NWs and linear resistance of the conductive fibers could be regulated by tuning the assembly cycles. A linear resistance of $1.4{\Omega}/cm$ could be achieved for the Ag NWs-coated nylon, which increases only 8% after 200 bending cycle, demonstrating high flexibility and mechanical stability. The flexible and stretchable conductive fibers have great potential for the application in wearable devices.

• 한국전자파학회논문지
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• 제12권2호
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• pp.293-298
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• 2001

Polyaniline(EB)/NMP 용액에 carbonblack, grahpite Ag를 첨가하여 우수한 막질의 free standing film을 제조하였다. 1 mole HCI로 도핑된 polyaniline(ES) free standing film($\sigma$=5 S/cm, t=0.14 mm)을 제조하여 10 MHz~1 GHz의 주파수 영역에서 전자기파 차폐효과를 측정한 결과 23~25 dB의 차폐효율을 나타내었으며, carbonblack, grahpite, AG을 첨가하여 제조한 ES free standing film 과 camphorsulfonic acid(CSA)를 도핑한 polyaniline film의 전자기파 차폐효율 측정결과 각각 30~34dB, 36~42dB, 44~52dB, 34~43dB로 ES free standing film 보다 우수한 특성을 나타내었다.

• Progress in Superconductivity
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• 제10권2호
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• pp.149-154
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• 2009

We measured and analyzed the quench development in coated conductor(CC) tapes. The CC was grown on hastelloy substrates and has an Ag protection layer. The tapes were subjected to simulated AC fault currents for quench development measurement. They were immersed in liquid nitrogen during the experiment. The quench resistance increased rapidly first, and the increase slowed down afterwards. It increased linearly with applied voltage at lower voltages, and depended less strongly on applied voltage at higher voltages. The resistance was compared with that of Au/YBCO films grown on sapphire substrates, and found to increase more monotonously than the latter. Data were analyzed quantitatively with the concept of heat transfer within the tape and the surrounding liquid nitrogen. A heat balance equation was derived and solved, taking into consideration temperature dependence of thermal parameters of the tapes. Solutions, together with values of thermal parameters taken from the literature, explained the data well. Cooling by liquid nitrogen affected the quench development considerably at lower applied voltages. Dependence on applied voltages could be also understood quantitatively.