• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.74-78
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• 2024

We have studied the effects of Ag on the characteristics of Sn₄₈In₅₂Ag_x (wt%) low-melting solders for photovoltaic ribbons. The Sn₄₈In₅₂ (wt%) solder coexisted in the InSn₄ and In₃Sn alloys. Ag atoms added in the solder formed an AgIn₂ alloy by reacting with some part of In atoms, while they did not react with Sn atoms. The addition of Ag atoms in the Sn₄₈In₅₂Ag_x (wt%) solders showed useful results; an increase in peel strength and a decrease in melting temperature. The peel strength of the ribbon plated with the Sn₄₈In₅₂ (wt%) solder was 53.6 N/mm², and that of the Sn₄₈In₅₂Ag₁ (wt%) solder largely increased to 125.1 N/mm². In the meanwhile, the melting temperature of the Sn₄₈In₅₂ (wt%) solder was 119.2℃, and that of the Sn₄₈In₅₂Ag₁ (wt%) solder decreased to 114.0℃.

• Journal of Welding and Joining
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• v.16 no.3
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• pp.148-156
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• 1998

The purpose of this study is to investigate the characteristics of Pb-Free Sn-2%Ag-Bi solder alloys. The solder alloys used in this study is Sn-2%Ag-(3,5,7,9%) Bi It is examined that their properties such as melting range, wettability, microstructure, microhardness, and tensile property. The addition of Bi(3,5,7,9%) lowered the melting point of the solder and the melting range was 196~203$^{\circ}C$. The wettability of the solder as equal to that of Sn-37% Pb solder. The morphology of structure did not change largely by addition of Bi. But the structure of cellular dendrite of linear type displayed. The tensile strength of the solder was superior to that of Sn-37%Pb solder. But the elongation was inferior to that of Sn-37%Pb solder. The hardness of Sn-2%Ag solder was tow times and that of Sn-2%Ag-Bi solder was three times of that in Sn-37%Pb solder. But the effect of increment of Bi content did not change largely.

• Journal of Welding and Joining
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• v.32 no.1
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• pp.66-70
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• 2014

In Ti active brazing of YSZ to STS 430 using Ag-Cu Filler Metal, the effect of Ti contents on the shear bonding strength were investigated together with the effect of brazing temperature and holding time. The addition of Ti in Ag-Cu Filler Metal increased the bonding strength up to 4.68% Ti, followed by the decrease with further addition. This seems to be caused by formation of TixOy at the reaction layer. Brazing temperature was optimized at $960^{\circ}C$ among a given temperature ranges. The addion of Sn to Ag-Cu filler metal brought the decrease of its melting temperature its melting temperature without a significant decrease of bonging strength.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.208-213
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• 2017

Flexible opto-electronic devices are developed on the insulating layer deposited stainless steel (STS) substrates. The silicon dioxide ($SiO_2$) material as the diffusion barrier of Fe and Cr atoms in addition to the electrical insulation between the electronic device and STS is processed using the plasma enhanced chemical vapor deposition method. Noble silver (Ag) films of approximately 100 nm thickness have been formed on $SiO_2$ deposited STS substrates by E-beam evaporation technique. The films then were annealed at $650^{\circ}C$ for 20 min using the rapid thermal annealing (RTA) technique. It was investigated the variation of the surface morphology due to the interaction between Ag films and $SiO_2$ layers after the RTA treatment. The results showed the movement of Si atoms in silver film from $SiO_2$. In addition, the structural investigation of Ag annealed at $650^{\circ}C$ indicated that the Ag film has the material property of p-type semiconductor and the bandgap of approximately 1 eV. Also, the films annealed at $650^{\circ}C$ showed reflection with sinusoidal oscillations due to optical interference of multiple reflections originated from films and substrate surfaces. Such changes can be attributed to both formation of $SiO_2$ on Ag film surface and agglomeration of silver film between particles due to annealing.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.551-554
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• 2002

As a general rule, the brazing process between cemented carbides and steel used by Silver (Ag) type brazing filler. The composition of Ag type filler were used Ag-Cu-Zn-Cd type filler mainly. But, the demand of Cadmium (Cd)-free in Ag type filler was raised recently. The reason why Cd-free in Ag brazing filler were occupied to vaporize as a CdO$_2$ when brazing process, because of Cd element was almost low boiling point of all Ag type filler elements. And, CdO$_2$ was a very harmful element for the human body. This experiment was developed Cd-freeing on Ag type filler that was used Indium (In) instead of Cd element. In this experiment, there were changed from 0 to 5% In addition in Ag brazing filler and investigated to most effective percentage of Indium. As a result, the change of In addition instead of Cd, there was a very useful element and obtained same property only 3% In added specimens compared to Cd 19% added specimens. These specimens were obtained same or more deflective strength. In this case, there were obtained 70 MPa over strength and wide brazing temperature range 650-800 C. A factor of deflective strength were influenced by composition and the shape of $\beta$ phase and between $\beta$ phase and cemented carbides interface. Indium element presented as $\alpha$ phase and non-effective factor directly, but it's occupied to solid solution hardening as a phase. $\beta$ phase were composed 84-94% Cu-Ni-Zn elements mainly. Especially, the presence of Ni element in interface was a very important factor. Influence of condensed Ni element in interface layer was increased the ductility and strength of brazing layer. Therefore, these 3% In added Ag type filler were caused to obtain a high brazing strength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.332-337
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• 2015

We have studied the effects of Ag on the characteristics of $Sn_{60}Pb_{40}Ag_x$ (wt%) solder for photovoltaic ribbon. Ag atoms in the solder formed an alloy phase of $Ag_3Sn$ after reacting with some part of Sn atoms, while they did not react with Pb atoms, but decreased the mean size of Pb solid phase. The enhancement of peel strength between solar cell and ribbon is an important part in the developments of long-lifespan solar module. The peel strength of the solder ribbon of $Sn_{60}Pb_{40}$ (wt%) was $169N/mm^2$, and it was largely enhanced by adding a small amount of Ag atoms. The maximum peel strength was $295N/mm^2$ in the solder ribbon of $Sn_{60}Pb_{40}Ag_2$ (wt%). This result is caused by the high binding energy of 162.9 kJ/mol between Ag atoms in the solder and Ag atoms in Ag sheet.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.827-832
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• 2005

Dual band internal antennas were fabricated with Ag conducting paste of various preparation conditions and different print thickness by silk screen print. We have investigated microwave properties were compared Ag conducting paste antenna with copperplate antenna at 800 MHz and 1,800 MHz. Gain of Ag conducting paste antenna was improved when preparation conditions were the single size Ag particle, using dry type resin and high Ag containing percent. However, it was lower than that of copperplate antenna within $0.1\~2.0dBi$ at 800MHz. In addition, it was improved at 800MHz when thickness of Ag conducting paste was printed more than skin depth but it was held after critical print thickness. On the other hand, it was reached level of copperplate antenna at 1,800MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.561-565
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• 1999

We measured the optical properties in Ag/chalcogenide films with the exposure of 325nm-Held laser In addition we have investigated the Ag doping mechanism as considering the changes of Ag-concentration distribution and optical energy gap ( $E_{op}$ ) with Photon-dose. The "windows" characteristics of Ag thin film occur around the wavelength of 325 nm and the Ag is evaluated to be transparent, without an absorption, in the region. While the $E_{op}$ of S $b_2$ $S_3$ thin film was changed largely by an exposure of HeNe laser(632.8 nm) an exposure of HeCd laser resulted in relatively small variation of $E_{op}$ . Therefore it is thought that photon absorption at the metal layer plays an important role in Ag photodoping.on at the metal layer plays an important role in Ag photodoping.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.627-633
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• 2003

The effects of alloying-element additions to Ag sheath on thermal conductivity and mechanical properties of Bi-2223 superconductor tapes have been evaluated. In order to evaluate the effects of sheath alloys and their configuration on the properties of tape, various combinations of Ag and Ag alloys were selected as the inner and outer sheath. Thermal conductivity of the tapes was evaluated by using thermal integral method at 10 ∼120 K. It was observed that the addition of Mg, Sb, and Au to Ag sheath significantly decreased the thermal conductivity at low temperature probably due to the alloying effect. Specifically, the thermal conductivity of AgMg, AgSb, and AgAu at 40 K were 411.4, 142.3, and 109.7 W/(m·K), respectly, which is about 2∼9 times lower than that of Ag (1004.6 W/(m·K)). In addition, the thermal conductivity of alloy-sheathed tape was significantly dependent on their thermal conductivities of constituent sheath materials. The mechanical properties of alloy-sheathed tapes were also evaluated. Yield strength and tensile strength were improved but workability decreased for alloy-sheathed tapes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.925-929
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• 2009

In this study, $0.95(K_{0.5}Na_{0.5})NbO_3-0.05Li(Sb_{0.8}Nb_{0.2})O_3$ ceramics were investigated as a function of the amount of $Ag_2O$ addition in order to improve dielectric and piezoelectric properties of lead-free piezoelectric ceramics. With increasing the amount of $Ag_2O$ addition, density and electromechanical coupling factor ($k_p$) increased up to 0.2 wt.% $Ag_2O$ and decreased above 0.2 wt.% $Ag_2O$. At the sintering temperature of $1020^{\circ}C$, electromechanical coupling factor ($k_p$), density, dielectric constant (${\varepsilon}r$) and curie temperature (Tc) of ceramics with 0.2 wt% $Ag_2O$ showed the optimal values of 0.42, $4.33\;g/cm^3$, 738 and $393^{\circ}C$, respectively.