• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.139-144
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• 2001

In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.620-626
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• 2018

Highly self-cleaning thin films of $TiO_2-SiO_2$ co-doped with Ag and F are prepared by the sol-gel method. The asprepared thin films consist of bottom $SiO_2$ and top $TiO_2$ layers which are modified by doping with F, Ag and F-Ag elements. XRD analysis confirms that the prepared thin film is a crystalline anatase phase. UV-vis spectra show that the light absorption of $Ag-F-TiO_2/SiO_2$ thin films is tuned in the visible region. The self-cleaning properties of the prepared films are evaluated by a water contact angle measurement under UV light irradiation. The photocatalytic performances of the thin films are studied using methylene blue dye under both UV and visible light irradiation. The $Ag-F-TiO_2/SiO_2$ thin films exhibit higher photocatalytic activity under both UV and visible light compared with other samples of pure $TiO_2$, Ag-doped $TiO_2$, and F-doped $TiO_2$ films.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.561-565
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• 1999

We measured the optical properties in Ag/chalcogenide films with the exposure of 325nm-Held laser In addition we have investigated the Ag doping mechanism as considering the changes of Ag-concentration distribution and optical energy gap ( $E_{op}$ ) with Photon-dose. The "windows" characteristics of Ag thin film occur around the wavelength of 325 nm and the Ag is evaluated to be transparent, without an absorption, in the region. While the $E_{op}$ of S $b_2$ $S_3$ thin film was changed largely by an exposure of HeNe laser(632.8 nm) an exposure of HeCd laser resulted in relatively small variation of $E_{op}$ . Therefore it is thought that photon absorption at the metal layer plays an important role in Ag photodoping.on at the metal layer plays an important role in Ag photodoping.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.10
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• pp.903-909
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• 2015

In this study, we used GO (graphene oxide) in order to enhance the adhesion between Ag NWs (nanowires) and substrates. By using a mixture solution of GO and Ag NW, a vacuum filtration process was used to fabricate a 50nm diameter thin film. Next, by using a light annealing process, the mechanical and electrical stability of Ag NW network was improved without any other treatment. The physical properties of the Ag NW - GO hybrid transparent conductive thin film was characterized in terms of a bending test, resistance and transmittance test, and nanoscale imaging using field-emission scanning electron microscopy.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.4
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• pp.611-616
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• 2016

In this study, we synthesized $Ag_2Se$ nanoparticles (NPs) in an aqueous solution and investigated the thermoelectric characteristics of $Ag_2Se$ NPs thin films on plastic substrates. Regardless of thermal annealing treatment, all the $Ag_2Se$ NPs thin films show the negative Seebeck coefficients, indicating the n-type characteristics. As the annealing temperature increases, the electric conductivity increases while the Seebeck coefficient decreases. The electric conductivity of the thin film annealed at $180^{\circ}C$ is larger by $10^6$ times, compared with the as-prepared thin film, And the maximum power density for the thin film annealed at $180^{\circ}C$ is calculated to be $44{\mu}W/cm^2$.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1959-1961
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• 1999

We prepared the $Ag[100\AA])/Sb_2S_3[3000\AA]$ films using the thermal evaporator. The films were exposed by the blue-pass filtered mercury lamp and the polarized He-Ne laser. We have investigated the dependence of the induced optical energy with Ag-doping and have observed the transmittance variation near the optical absorption edge with the light source. It was shown that the energy gap of this thin film was largely changed by exposing He-Ne laser, the light source of the near energy gap of this thin film. It is because of the structural change from Ag-doping. It is investigated that the dissolution, the diffusion, and the field effect of the Ag thin film generate the Ag spatial distribution.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.387-391
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• 2006

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

• Bulletin of the Korean Chemical Society
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• v.25 no.7
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• pp.1068-1070
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• 2004

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1022-1026
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.