• 한국광학회:학술대회논문집
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• 한국광학회 2005년도 하계학술발표회
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• pp.114-115
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• 2005

• 한국결정성장학회지
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• 제30권5호
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• pp.189-193
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• 2020

최근 웨어러블 센서를 구현하기 위한 유연전극을 제조하기 위한 다양한 방법들이 논의되고 있다. 현재 개발되고 있는 웨어러블 센서기기는 피부의 신축성에 따라 잘 늘어나야 하고, 신축성을 부여하기 위해, 다양한 고분자 기판이 사용되어지고 있다. 따라서, 본 논문에서는 스펀지 기반 신축성 기판에 고탄성의 은나노와이어 전극을 형성하고 신축의 정도에 따른 전기적 특성 평가를 진행하였다. 제조 방법은 습식합성법을 이용하여 은나노와이어를 성장시켰고 플라즈마 표면처리된 폴리우레탄 기반의 스펀지에 함침시킨 후 저온에서 열처리를 하였다. 특히, 스펀지의 플라즈마 표면처리는 은나노와 이어의 균일한 코팅을 가능케 하였다. 유연 스펀지 전극은 160회 이상의 반복 인장-수축 사이클에서 신뢰성있는 전기 저항변화를 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.244.1-244.1
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• 2015

The Ag Nanowire is one of the materials that are widely studied as alternatives to ITO and is available for large area, low cost process and the flexible transparent electrode. However, Ag nanowire can have the problem of a lack of stability at high temperatures, making this impossible to form a film. Using a structure of ITO/AgNW/ITO in photodetector device, we improved the properties of the ITO in the IR region and improved the thermal stability of the AgNW. The structure of ITO/AgNW/ITO has a high transmittance value of 89% at a wavelength of 900 nm and provide a good electrical property. The AgNWs embedded ITO film has a high transmittance, this is because of the light scattering from the AgNW. The thermal stability of the developed ITO/AgNWs/ITO films were investigated and found AgNWs embedded ITO films posses considerable high stability compared to the solo AgNWs on the Si surface. The ITO/AgNWs/ITO device showed a improved photo-response ratio compared to those of the conventional TC device in IR region. This is attributed to the high transmittance and low sheet resistance. We suggest an effective design scheme for IR-sensitive photodetection by using an AgNW embedded ITO.

• 한국표면공학회지
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• 제48권4호
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• pp.158-162
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• 2015

To substitute indium tin oxide (ITO), many substituents have been studied such as metal nanowires, carbon based materials, 2D materials, and conducting polymers. These materials are not good enough to apply to an electrode because theses exhibit relatively high resistance. So metal grids are required as an additionalelectrode to improve the conductivities of substituents. The metal grids were printed by electrohydrodynamic printing system using Ag nanoparticle based ink. The Ag grids showed high uniformity and the line width was about $10{\mu}m$. The Ag nanoparticles are surrounded by dispersants such as unimolecular and polymer to prevent aggregation between Ag nanoparticles. The dispersants lead to low conductivity of Ag grids. Thus, the sintering process of Ag nanoparticles is strongly recommended to remove dispersants and connect each nanoparticles. For sintering process, the interface and microstructure of the Ag grid were controlled in 1.0 torr Ar atmosphere at aound $400^{\circ}C$ of temperature. From the sintering process, the uniformity of the Ag grid was improved and the defects on the Ag grids were reduced. As a result, the resistivity of Ag grid was greatly reduced up to $5.03({\pm}0.10){\times}10^{-6}{\Omega}{\cdot}cm$. The metal grids embedded substrates containing low pressure Ar sintered Ag grids showed 90.4% of transmittance in visible range with $0.43{\Omega}/{\square}$ of sheet resistance.

• Current Photovoltaic Research
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• 제2권3호
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• pp.130-134
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• 2014

We have fabricated the selective emitter solar cell using double textured nanowires structure. The $40{\times}40mm2$-sized silicon substrates were textured to form the pyramid-shaped surface and the nanowires were fabricated by metal assisted chemical etching process using Ag nanoparticles, subsequently. The heavily doped and shallow emitters for selectiv eemitter solar cells were prepared through the thermal $POCl_3$ diffusion and chemical etch-back process, respectively. The front and rear electrodes were prepared following conventional screen printing method and the widths of fingers have been optimized. The selective emitter solar cell using double textured nanowires structure achieved a conversion efficiency of 17.9% with improved absorption and short circuit current density.

• 마이크로전자및패키징학회지
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• 제26권3호
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• pp.37-41
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• 2019

Ag나노와이어 도전성 잉크를 플렉서블한 투명 기판 위에 코팅 후 이러한 여분의 유기물을 $O_2$ 플라즈마를 이용하여 제거함으로써 Ag 나노와이어를 이용한 투명전극의 면저항과 광학적 특성을 최적화하였다. Ag 나노와이어 도전성 잉크를 코팅한 후 30초간 $O_2$ 플라즈마 처리를 하였을 때 면저항은 최대 27 % 정도 감소하였으며, 잔류 유기물의 제거를 통하여 그 광학적 특성도 향상됨을 알 수 있었다. 또한 $O_2$ 플라즈마 처리 시간이 30초 이상 증가할 경우 그 면저항이 오히려 감소함을 확인하였는데, 이는 과도한 $O_2$ 플라즈마로 인하여 Ag나노와이어의 degradation이 일어나는데 그 원인이 있음을 확인하였다.

• 한국재료학회지
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• 제25권3호
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.6-10
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• 2020

The silver nanowires (AgNWs) were synthesized by the conventional polyol process, which revealed 25 ㎛ and 30 nm of average length and diameter, respectively. The synthesized AgNWs were applied to the CdSe/CdZnS quantum dot (QD) based transparent light-emitting device (LED). The device using a randomly networked AgNWs electrode had some problems such as the high threshold voltage (for operating the device) due to the random pores from the networked AgNWs. As a method of improvement, a composite electrode was formed by overlaying the ZnO:Ga on the AgNWs network. The device used the composite electrode revealed a low threshold voltage (4.4 Vth) and high current density compared to the AgNWs only electrode device. The brightness and current density of the device using composite electrode were 55.57 cd/㎡ and 41.54 mA/㎠ at the operating voltage of 12.8 V, respectively, while the brightness and current density of the device using (single) AgNWs only were 1.71 cd/㎡ and 2.05 mA/㎠ at the same operating voltage. The transmittance of the device revealed 65 % in a range of visible light. Besides the reliability of the devices was confirmed that the device using the composite electrode revealed 2 times longer lifetime than that of the AgNWs only electrode device.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

• 한국재료학회지
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• 제29권2호
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• pp.87-91
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• 2019

We report on stretchable electrochromic films of poly(3-hexylthiophene) (P3HT) fabricated on silver nanowire (AgNW) electrodes. AgNWs electrodes are prepared on polydimethylsiloxane (PDMS) substrates using a spray coater for stretchable electrochromic applications. On top of the AgNW electrode, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is introduced to ensure a stable resistance over the electrode under broad strain range by effectively suppressing the protrusion of AgNWs from PDMS. This bilayer electrode exhibits a high performance as a stretchable substrate in terms of sheet resistance increment by a factor of 1.6, tensile strain change to 40 %, and stretching cycles to 100 cycles. Furthermore, P3HT film spin-coated on the bilayer electrode shows a stable electrochromic coloration within an applied voltage, with a color contrast of 28.6 %, response time of 4-5 sec, and a coloration efficiency of $91.0cm^2/C$. These findings indicate that AgNWs/PEDOT:PSS bilayer on PDMS substrate electrode is highly suitable for transparent and stretchable electrochromic devices.