• Journal of the Korean Society for Heat Treatment
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• v.29 no.6
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• pp.272-276
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• 2016

Al doped ZnO (AZO) single layer and AZO/Ag bi-layered films were deposited on the glass substrates by radio frequency and direct current magnetron sputtering and then the effect of Ag buffer layer on the electrical and optical properties of the films was investigated. The thicknesses of AZO upper layer was kept as 100 nm, while Ag buffer layer was varied from 5 to 15 nm. The observed results mean that opto-electrical properties of the AZO films is influenced with Ag buffer layer and AZO film with 10 nm thick Ag buffer layer show the higher opto-electrical performance than that of the AZO single layer film prepared in this study.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.10-15
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• 1999

White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was $Ba_{0.5}Sr_{0.5}TiO_3$, substrate temperature was $400^{\circ}C$, working pressure was 30 mTorr, and A:$O_2$ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor tapers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was $95\;V_{rms}$, maximum brightness was $3,000\;cd/m^2$ at $150\;V_{rms}$. Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.351-351
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• 2013

한국 전체 에너지 사용량 중약 24%의 에너지가 건축물 부분에 소비되고 있다. 건축물의 벽체나 유리창 등을 통해서 에너지 손실이 이루어지는데 유리창은 벽체에 비해 약 10배 이상 낮은 단열 특성을 가지고 있기 때문에 유리창을 통한 열손실량은 더 크다. 이러한 유리창 부분의 열손실 문제를 해결할 수 있는 방안으로 좋은 단열 특성 및 낮은 방사율을 가지고 있는 Low-e coating 방법을 사용하였다. 본 실험에서는 XG glass 기판 위에 IGZO/Ag/IGZO OMO 구조의 다층 박막을 증착하였다. RF magnetron sputtering방법을 이용하여 OMO 구조의 상부와 하부의 Oxide layer로 IGZO 박막을 증착하였다. 사용된 IGZO 타겟은 $In_2O_3$ (99.99%), $Ga_2O_3$ (99.99%), ZnO (99.99%)의 분말을 각각 1:1:1 mol% 조성비로 혼합하여 소결하여 제작하였다. Thermal Evaporator 장비를 이용하여 OMO 구조의 Metal layer로 Ag (99.999%)를 증착하였다. 실험 기판은 크기 $30{\times}30mm$의 0.7T XG glass를 사용하였다. OMO 구조의 산화층 IGZO 박막은 상/하층 동일 조건으로 기판 온도는 실온으로 고정하였으며, 초기 압력 $3.0{\times}10^{-6}$ Torr, 증착 압력 $3.0{\times}10^{-2}$ Torr, RF 파워 50W, Ar 유량 50 sccm로 고정시키고 증착 시간이 변화하면서 박막을 증착하였다. OMO 구조의 Metal layer로 Ag 증착 조건은 초기 진공도가 약 $6.0{\times}10^{-6}$ Torr 이하로 유지하고 기판을 2 Rpm의 속도로 회전시켰다. 이후 0.3 V로 Ag를 10분간 가열하여 충분히 녹인 후 Film Thickness Monitor로 두께를 확인하였다. OMO 다층 박막의 산화물층 변화에 따라 로이다층 박막의 구조적, 광학적 및 전기적 특성을 분석하였다. XRD 분석결과에 의하여 Bragg's 법칙을 만족하는 피크가 나타나지 않는 비정질 구조임을 확인할 수 있으며, AFM 분석결과에 통해서 최소 1.3 nm의 Roughness를 나타내었다. UV-Visible-NIR 분광광도계를 이용하여 다층 박막은 가시광선 영역에서 평균 80%의 광 투과성을 보여 IR 영역에서 평균 30% 투과하고 좋은 차단 특성을 나왔다. Low-e 특성을 갖는 유리창을 통해서 에너지 절약을 이룰 수 있는 것을 확인할 수 있었다.

• Journal of the Korean Electrochemical Society
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• v.6 no.3
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• pp.196-202
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• 2003

We investigated the effect of both 4 types additives and $0.5wt\%\;Pb_3O_4$ which have been reported to show an improvement on the performance of Zinc anode. And Experimental methods such as corrosion potential measurement, potentiodynamic polorization test and charging-discharging cycle life test were carried out in $40 wt\%$ KOH with $Pb_3O_4(0.5, \;10\;&\;2.0wt\%)$ and 4 types additives $(0.4wt\%\;of\;Ca(OH)_2$, 0.025M of Citrate, Tartrate and Gluconate). Corrosion potential was shifted to high direction and also changed to high and low direction repeatedly with increasing of $Pb_3O_4$ quantity. However by adding $0.5wt\%\;Pb_3O_4$, corrosion potential shifted to low direction and showed stable condition. Furthermore it was well known that corrosion resistance was predominantly increased compared to no addition and improved charging-discharging property with adding additives. By SEM analysis, it was concluded that the morphology of surface in case of only $0.5wt\%\;Pb_3O_4$ addition was nearly the same as that of Tartrate additive and in the other additives such as $Ca(OH)_2$, Citrate, Tartrate and Gluconate, their morphologies showed dendrite growth. Eventually it was thought that the additive of Tartrate indicated comparatively good corrosion resistance effect as well as charging-discharging property improvement among those four types additives.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.120-120
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• 2016

Ti-6Al-4V alloy have been used for dental implant because of its excellent biocompatibility, corrosion resistance, and mechanical properties. However, the integration of such implant in bone was not in good condition to achieve improved osseointergraiton. For solving this problem, calcium phosphate (CaP) has been applied as coating materials on Ti alloy implants for hard tissue applications because its chemical similarity to the inorganic component of human bone, capability of conducting bone formation and strong affinity to the surrounding bone tissue. Various metallic elements, such as strontium (Sr), magnesium (Mg), zinc (Zn), sodium (Na), silicon (Si), silver (Ag), and yttrium (Y) are known to play an important role in the bone formation and also affect bone mineral characteristics, such as crystallinity, degradation behavior, and mechanical properties. Especially, Zn is essential for the growth of the human and Zn coating has a major impact on the improvement of corrosion resistance. Plasma electrolytic oxidation (PEO) is a promising technology to produce porous and firmly adherent inorganic Zn containing $TiO_2(Zn-TiO_2)$coatings on Ti surface, and the a mount of Zn introduced in to the coatings can be optimized by altering the electrolyte composition. In this study, corrosion behavior of Ti-6Al-4V alloy after plasma electrolytic oxidation in solutions containing Ca, P and Zn were studied by scanning electron microscopy (SEM), AC impedance, and potentiodynamic polarization test. A series of $Zn-TiO_2$ coatings are produced on Ti dental implant using PEO, with the substitution degree, respectively, at 0, 5, 10 and 20%. The potentiodynamic polarization and AC impedance tests for corrosion behaviors were carried out in 0.9% NaCl solution at similar body temperature using a potentiostat with a scan rate of 1.67mV/s and potential range from -1500mV to +2000mV. Also, AC impedance was performed at frequencies ranging from 10MHz to 100kHz for corrosion resistance.

• Proceedings of the KSEEG Conference
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• 2000.04a
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• pp.110-110
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• 2000

Temporal and spatial distribution patterns of the magmatic rocks and associated ore deposits in the Mesozoic magmatic - metallogenic belt along the Yangtz River, Anhui Province are used to determine and discuss the crust - mantle interaction processes. The magmatic rocks are Cu - Au mineralized high - K calc - alkalic intermediate ¬acidic (CAK) and Fe - Cu mineralized high - Na alkalic - calc intermediate - basic intrusive rocks (FCN) in the central part of the belt and grade to Cu - Mo - Pb - Zn - Ag mineralized calc - alkalic granitoids (CMG) and A - type granites (AG) in the southern and northern parts of the belt. Samples from the CAK and CMG yield Rb - Sr isochron ages of 137 - 140Ma with $(^{87}Sr/^{86}Sr)_{o}$ = 0.7060 - 0.7101, while those from the FCN and AG yield the ages of 120 - 129Ma with $(^{87}Sr/^{86}Sr)_{o}$ = 0.7047 - 0.7077. The Sr isotope ratios, CriTh ratios 0.4 - 3.1), Eu/Eu* ratios < 0.79 - 1.05) and initial epsilon (Nd) values (-16.6 - -6.3) for the CAK and CMG are consistent with magma derivation from old metamorphic basement rocks rich in metallogenic elements through a two - stage process of mantle - derived magma underplating caused by primary lithosphere extension and subsequent partial melting. On the basis of Sr isotope data, CriTh ratios (3.4 - 13.8), Eu/Eu* ratios (0.86 - 1.13) and initial epsilon (Nd) values (-7.7 - +1.4), the FCN and AG are considered to be formed through syntexis with material input from the mantle that resulted from further lithosphere extension followed by mantle - derived magma underplating on a large scale.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.25-30
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• 2020

Oxide (SiO₂)/Metal(Ag)/Oxide(SiO₂, ITO, ZnO) multilayer films were fabricated using a magnetron sputtering technique at room temperature on Si (p-type, 100) and a glass substrate. The electrical and optical properties of the asymmetric multilayer films depended on the thickness of the mid-layer film and the type of oxide in the bottom layer. As the metal layer becomes thicker, the sheet resistance decreases. However, the transmittance decreases when the metal layer exceeds a threshold thickness of approximately 10~12 nm. In addition, the sheet resistance and transmittance change according to the type of oxide in the bottom layer. If the oxide has a large resistivity, the overall sheet resistance increases. In addition, the anti-reflection effect changes according to the refractive index of the oxide material. The optical and electrical properties of multilayer films were investigated using an ultraviolet visible (UV-Vis) spectrophotometer and a 4-point probe, respectively. The optimum structure is SiO₂ (30 nm)/Ag (10 nm)/ZnO (30 nm) multilayer, with the highest FOM value of 7.7×10^-3 Ω^-1.

• Economic and Environmental Geology
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• v.31 no.2
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• pp.111-125
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• 1998

Dispersion, migration and enrichment of environmental toxic elements from the Samkwang Au-Ag mine area were investigated based upon major, minor and rare earth element geochemistry. The Samkwang mine area composed mainly of Precambrian granitic gneiss. The mine had been mined for gold and silver, but closed in 1996. According to the X-ray powder diffraction, mineral composition of stream sediments and soils were partly variable mineralogy, which are composed of quartz, orthoclase, plagioclase, amphibole, muscovite, biotite and chlorite, respectively. Major element variations of the host granitic gneiss, stream sediments and soils of mining and non-mining drainage, indicate that those compositions are decrese $Al_2O_3$, $Fe_2O_3$, MgO, $TiO_2$, $P_2O_5$ and LOI with increasing $SiO_2$ respectively. Average compositional ranges (ppm) of minor and/or environmental toxic elements within those samples are revealed as As=<2-4500, Cd=<1-24, Cu=6-117, Sb=1-29, Pb=17-1377 and Zn=32-938, which are extremely high concentrations of sediments from the mining drainage (As=2006, Cd=l1, Cu=71, Pb=587 and Zn=481 ppm, respectively) than concentrations of the other samples and host granitic gneiss. Major elements (average enrichment index=6.53) in all samples are mostly enriched, excepting $SiO_2$, $Na_2O$ and $K_2O$, normalized by composition of host granitic gneiss. Rare earth element (average enrichment index=2.34) are enriched with the sediments from the mining drainage. Minor and/or environmental toxic elements within all samples on the basis of host rock were strongly enriched of all elements (especially As, Br, Cu, Pb and Zn), excepting Ba, Cr, Rb and Sr. Average enrichment index of trace elements in all samples is 15.55 (sediments of mining drainage=37.33). Potentially toxic elements (As, Cd, Cr, Cu, Ni, Pb, and Zn) of the samples revealed that average enrichment index is 46.10 (sediments of mining drainage=80.20, sediments of nonmining drainage=5.35, sediments of confluent drainage=20.22, subsurface soils of mining drainage=7.97 and subsurface soils of non-mining drainage=4.15). Sediments and soils of highly concentrated toxic elements are contained some pyrite, arsenopyrite, sphalerite, galena and goethite.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.18.2-18.2
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• 2010

For the past a few years, we have intensively researched the printable inorganic conductors and ZnO-based amorphous oxide semiconductors (AOSs) for thin-film transistors. For printable conductor materials, we have focused on the aqueous Ag and Cu ink which possess a variety of advantages, comparing with the conventional metal inks based on organic solvent system. The aqueous Ag ink was designed to achieve the long-term dispersion stability using a specific polymer which can act as a dispersant and capping agent, and the aqueous Cu ink was carefully formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. For printable ZnO-based AOSs, we have researched the noble way to resolve the critical problem, a high processing-temperature above $400^{\circ}C$, and recently discovered that Ga doping in ZnO-based AOSs promotes the formation of oxide lattice structures with oxygen vacancies at low annealing-temperatures, which is essential for acceptable thin-film transistor performance. The mobility dependence on annealing temperature and AOS composition was analyzed, and the chemical role of Ga are clarified, as are requirements for solution-processed, low-temperature annealed AOSs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.348-352
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• 2022

Resistive switching behaviors of a co-sputtered zinc silicate thin film (ZnO and SiO₂ targets) have been investigated. We fabricated an Ag/ZnSiO_x/highly doped n-type Si substrate device by using an RF magnetron sputter system. X-ray diffraction pattern (XRD) indicated that the Zn₂SiO₄ was formed by a post annealing process. A unique morphology was observed by scanning electron microscope (SEM) and atomic force microscope (AFM). As a result of annealing process, 50 nm sized nano clusters were formed spontaneously in 200~300 nm sized grains. The device showed a unipolar resistive switching process. The average value of the ratio of the resistance change between the high resistance state (HRS) and the low resistance state (LRS) was about 106 when the readout voltage (0.5 V) was achieved. Resistance ratio is not degraded during 50 switching cycles. The conduction mechanisms were explained by using Ohmic conduction for the LRS and Schottky emission for the HRS.