• 마이크로전자및패키징학회지
• /
• 제27권1호
• /
• pp.1-7
• /
• 2020

The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).