• Applied Chemistry for Engineering
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• v.29 no.6
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• pp.782-788
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• 2018

Submicron copper-silver core-shell (Cu@Ag) particles were synthesized using the sonochemical combined transmetallation reaction and the application to printed electronics as a low cost conductive paste was evaluated. $Cu_2O$ of the $Cu_2O/Cu$ composite used as a core in the reaction for the synthesis of core-shell was sonochemically reduced to Cu, and Cu atoms functioned as a reducer for silver ions in transmetallation to achieve the copper-silver core-shell structure. The characterization of submicron particles by TEM-EDS and TG-DSC confirmed the core-shell structure. Conductive pastes in which 70 wt% Cu@Ag was dispersed in solvents were prepared using a binder and wetting agents, and coated on the polyamide film using a screen-printing method. Printed paste films containing synthesized Cu@Ag particles with 8 at% and 16 at% Ag exhibited low resistivity of 96.2 and $38.4{\mu}{\Omega}cm$ after sintering at $180^{\circ}C$ in air, respectively.

• Journal of Electrochemical Science and Technology
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• v.14 no.1
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• pp.59-65
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• 2023

Sodium hydroxide solutions are often employed as sterilization agents in the pharmaceutical industry. Here, the chloride content is considered as a critical impurity. In this study, an electrochemical method was developed to remove chloride ions (Cl^-) through the oxidative deposition of AgCl on a Ag anode. The Cl^- content in the commercially available 50% w/w NaOH solution employed was approximately 100 mg Cl^-/kg NaOH. As the OH^- content is approximately 18,000 times higher than the Cl^- content, the formation of AgCl may be expected to be thermodynamically less favorable than the formation of Ag₂O. However, activation energies for AgCl and Ag₂O formation have been reported to be approximately 3.8 and 31.2 kJ/mol, respectively, and indicate that AgCl formation is favored. AgCl can be selectively produced by controlling the anode potential. Here, the Cl^- concentration was reduced to less than 50 mg Cl^-/kg NaOH when an anode potential of 0.18 or 0.19 V vs. Hg/HgO (reference electrode) was applied for one hour at 50℃. XRD analysis and visual monitoring of the Ag anode confirmed the oxidative deposition of AgCl on the anode surface as well as the electrochemical desalination of the concentrated NaOH solution.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.

• Bulletin of the Korean Chemical Society
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• v.25 no.2
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• pp.177-181
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• 2004

A PVC membrane electrode for silver ion based on a new cone shaped calix[4]arene (CASCA) as membrane carrier was prepared. The electrode exhibits a Nernstian response for $Ag^+$ over a wide concentration range ($1.0{\times}10^{-1}-8.0{\times}10^{-6}$M) with a slope of 58.2 {\pm}$ 0.5 mV per decade. The limit of detection of the sensor is $5.0{\times}10^{-6}$M. The sensor has a very fast response time (~5 s) in the concentration range of ${\leq}=1.0{\times}10^{-3}$ M, and a useful working pH range of 4.0-9.5. The proposed sensor displays excellent discriminating ability toward $Ag^+$ ion with respect to common alkali, alkaline earth, transition and heavy metal ions. It was used as an indicator electrode in potentiometric titration of $Ag^+$ with EDTA and in direct determination of silver ion in wastewater of silver electroplating.

• Advances in nano research
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• v.4 no.4
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• pp.281-294
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• 2016

The advantages of nano-scale materials (size 1-99 nm in at least in one dimension) could be realized with their potential applications in diversified avenues. Herein, we report for the first time on the successful synthesis of homogeneous epoxy coatings containing phytogenic silver nanoparticles (Ag) on PVC and glass substrates by room-temperature curing of fully mixed epoxy slurry diluted by acetone. Alstonia scholaris bark extract was used to reduce and stabilize the silver ions. The surface morphology and mechanical properties of these coatings were characterized using the techniques like, UV-Vis (UV-Visible) spectrophotometry, X-ray diffraction (XRD), Fourier transform infrared spectrophotometry (FT-IR), Epifluorescence microscopy and scanning electron microscopy (SEM). The effect of incorporating Ag nanoparticles on the biofilm (scale) resistant epoxy-coated PVC was investigated by total viable counts ($CFU/cm^2$) from epoxy coating from (Initial) $1^{st}$ day to $25^{th}$ days. The phytogenic Ag nanoparticles were found to be significantly improving the microstructure of the coating matrix and thus enhanced the anti-biofilm performance of the epoxy coating. In addition, the antimicrobial mechanism of Ag nanoparticles played an important role in improving the anti-biofilm performance of these epoxy coatings.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.237.2-237.2
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• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.342-342
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• 2012

Resistance-change Random Access Memory (ReRAM), which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.859-862
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• 2001

This study describes a selective Ag etching solution for use with pattern on the surface of copper. This etching solution uses potassium iodide and potassium sulfate as the ligand that coordinates to the metal ions and ferricyanide as the oxidant. The etching rate was depended on the concentration of co-ligands and time. But the etching rate wasn't depended on the pH(2∼6), and oxidant(K$_3$Fe(CN)$\_$6/). Complete etching of silver can be achieved rapidly within 90sec for 4.46${\mu}$m thick metal films when aqueous solutions containing K$_3$Fe(CN)$\_$6/, K$_2$S$_2$O$\_$8/ and KI was used. This etching solution was characteristic of anisotropic etching.

• Nuclear Engineering and Technology
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• v.44 no.8
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• pp.971-976
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• 2012

Silica-coated Au with Ag, Co, Cu, and Ir bimetallic radioisotope nanoparticles were synthesized by neutron irradiation, after coating $SiO_2$ onto the bimetallic particles by the sol-gel St$\ddot{o}$ber process. Bimetallic nanoparticles were synthesized by irradiating aqueous bimetallic ions at room temperature. Their shell and core diameters were recorded by TEM to be 100 - 112 nm and 20 - 50 nm, respectively. The bimetallic radioisotope nanoparticles' gamma spectra showed that they each contained two gamma-emitting nuclides. The nanoparticles could be used as radiotracers in petrochemical and refinery processes that involve temperatures that would decompose conventional organic radioactive labels.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.413-414
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• 2012

Programmable Metallization Cell (PMC) memory, which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.