• 한국지하수토양환경학회지:지하수토양환경
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• 제22권3호
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• pp.42-49
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• 2017

TOUGH2 was used to simulate the migration of $CO_2$ injected into a sandy aquifer. A series of numerical simulations was performed to investigate the effects of a low-permeability layer (LPL) embedded in the aquifer on the injection rate and the pressure distribution of $CO_2$. The results show that the size and location of the LPL greatly affected the spread of $CO_2$. The pressure difference between two points in the aquifer, one each below and above the LPL, increased as the size of the LPL increased, showing a critical value at 200 m, above which the size effect was diminished. The location of the LPL with respect to the injection well also affected the migration of $CO_2$. When the injection well was at the center of the LPL, the injection rate of $CO_2$ decreased by 5.0% compared to the case with no LPL. However, when the injection well was at the edge of the LPL, the injection rate was decreased by only 1.6%. The vertical distance between the injection point and the LPL also affected the injection rate. The closer the LPL was to the injection point, the lower the injection rate was, by up to 8.3%. Conclusively, in planning geologic storage of $CO_2$, the optimal location of the injection well should be determined considering the distribution of the LPL in the aquifer.

• 한국초전도ㆍ저온공학회논문지
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• 제5권2호
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• pp.41-45
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• 2003

Resistance distribution in thin film type SFCL elements of different shunt layer thickness was investigated. The 300 nm thick film of 2 inch diameter was coated with a gold layer and patterned into 2 mm wide meander lines. The shunt layer thickness was varied by ion milling the shunt layer with Ar ions, and also by having the shunt layer grown in different thickness. The SFCL element was subjected to simulated AC fault current for measurements. It was immersed in liquid nitrogenduring the experiment. The resistance distribution was not affected by the shunt layer thickness at applied voltages that brought the temperature of the elements to similar values. This result could be explained with the concept of heat transfer from the film to the surroundings. The resistance distribution was independent of the shunt layer thickness because thick sapphire substrates of high thermal conductivity dominated the thermal conductance of the elements.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.896-901
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• 2002

The polarization and strain behavior of multilayer ceramic actuators fabricated by tape casting using a PNN-PZT ceramics were investigated in association with electrode size and internal layer number. Spontaneous polarization and strain decreased with increasing electrode size. In addition, the increase of internal layer number brought reduced spontaneous polarization and increased the field-induced strain. Because the actuators structure is designed to stack ceramic layer and electrode layer alternatively, the ceramic-electrode interfaces may act as a resistance to motion of domain wall. To analyze the effect of ceramic-electrode interface, the diffraction intensity ratio of (002) to (200) planes was calculated from X-ray diffraction patterns of samples subjected to a voltage of 200 V. The diffraction intensity ratio of (002) to (200) planes was decreased with increasing electrode size and internal layer number. The diffraction intensity ratio and straining behavior analyses indicate that the Polarization and strain were affected by the amount of 90°domain decreasing with increasing electrode size and internal layer number. Consequently, the change of polarization and displacement with respect to electrode size and layer number is likely to be caused by readiness of the domain wall movement around the interface.

• 유체기계공업학회:학술대회논문집
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• 유체기계공업학회 2006년 제4회 한국유체공학학술대회 논문집
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• pp.445-448
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• 2006

The effects of surface roughness on a spatially-developing turbulent boundary layer (TBL) were investigated by performing direct numerical simulations of TBLs over rough and smooth walls. The Reynolds number based on the momentum thickness was varied in the range $Re_{\theta}=300{\sim}1400$. The roughness elements used were periodically arranged two-dimensional spanwise rods, and the roughness height was $k=1.5{\theta}_{in}$, which corresponds to $k/{\delta}=0.045{\sim}0.125$. To avoid generating a rough wall inflow, which is prohibitively difficult, a step change from smooth to rough was placed $80{\theta}_{in}$ downstream from the inlet. The spatially-developing characteristics of the rough-wall TBL were examined. Along the streamwise direction, the friction velocity approached a constant value and a self-preserving form of the turbulent stress was obtained. Introduction of the roughness elements affected the turbulent stress not only in the roughness sublayer but also in the outer layer. Despite the roughness-induced increase of the turbulent stress in the outer layer, the roughness had only a relatively small effect on the anisotropic Reynolds stress tensor in the outer layer. Inspection of the triple products of the velocity fluctuations revealed that introducing the roughness elements onto the smooth wall had a marked effect on vertical turbulent transport across the whole TBL. By contrast, good surface similarity in the outer layer was obtained for the third-order moments of the velocity fluctuations.

• 전자공학회논문지 IE
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• 제48권2호
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• pp.1-5
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• 2011

HVPE법으로 $3{\mu}m$의 GaN epi를 성장하고 이 위에 DC 마그네트론 Sputter를 이용하여 Ti stripe 패턴 형성하였으며 다시 HVPE를 이용하여 $120{\mu}m$ ~ $300{\mu}m$ 두께의 GaN를 overgrowth하였다. 성장된 GaN는 SEM 측정으로 Ti 패턴한 부분에서 void가 관찰되었고 보다 두꺼운 GaN를 성장시에는 크랙이 void를 따라 발생할 수 있음을 확인하였으며 XRD측정으로 FWHM은 188 arcsec로 측정되었다. 성장전의 GaN epi와의 반치폭을 비교하였을 때 패턴에 사용된 Ti는 overgrowth시 결정성에는 크게 영향을 주지 않는다는 것을 확인하였다.

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.439-444
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• 2005

We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

• 설비공학논문집
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• 제15권9호
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• pp.711-717
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• 2003

This paper presents the effects of the fin array and pitch on the frost layer growth of a heat exchanger. The numerical results are compared with experimental data of a cold plate to validate the present model, and agree well with experimental data within a maximum error of 8%. The frost behaviors of the staggered fin array are somewhat different from those of in-line array. The frost layer formed on the first fin of the in-line array grows rapidly, compared to second fin, whereas the difference of the frost layer growth between the fins of the staggered array is small. For fin pitch below 10 m, the frost layer growth of second fin in the staggered array is affected by that of first fin. The thickness of the frost layer and heat transfer of single fin are reduced with decreasing fin pitch regardless of fin array. However, the thermal performance of a heat exchanger is enhanced due to the increase of heat transfer surface area.

• 한국자기학회지
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• 제15권6호
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• pp.303-306
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• 2005

Micromagnetics 전산 모사를 이용하여 국소적 층간교환상호작용이 있는 강자성/비자성/강자성 다층박막 구조에서 Bloch 자벽이나 Neel 자벽보다 더 얇은 두께의 자벽이 인위적으로 형성될 수 있음을 보였고, 이때 생성된 좁은 자벽의 두께가 강자성층의 두께에 의해 영향을 받음을 보였다. 국소적 층간교환상호작용을 가진 $Fe_1/Cr/Fe_2$ 구조에서 좁은 자벽이 생성됨을 보였고, $Fe_2$ 층의 두께를 20nm로 고정시키고 $Fe_1$층의 두께를 각각 1, 2, 4, 6nm으로 변화시켜가며 전산 모사를 수행하여 $Fe_1$ 층의 두께가 감소함에 따라 자벽의 두께가 얇아짐을 확인하였다.

• Earthquakes and Structures
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• 제27권1호
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• pp.41-55
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• 2024

There are obvious differences between the characteristics of offshore ground motion and onshore ground motion in current studies, and factors such as water layer and site conditions have great influence on the characteristics of offshore ground motion. In addition, unlike seismic response analysis of offshore superstructures such as sea-crossing bridges, tunnels are affected by offshore soil constraints, so it is necessary to consider the dynamic interaction between structure and offshore soil layer. Therefore, a seismic response analysis model considering the seawater, soil layer and tunnel structure coupling is established. Firstly, the measured offshore and different soil layers onshore ground records are input respectively, and the difference of seismic response under different types of ground motions is analyzed. Then, the models of different site conditions were input into the measured onshore bedrock strong ground motion records to study the influence of seawater layer and silt soft soil layer on the seabed and tunnel structure. The results show that the overall seismic response between the seabed and the tunnel structure is more significant when the offshore ground motion is input. The seawater layer can suppression the vertical seismic response of seabed and tunnel structure, while the slit soft soil layer can amplify the horizontal seismic response. The results will help to promote seismic wave selection of marine structures and provide reference for improving the accuracy of seismic design of immersed tunnels.

• 한국인쇄학회지
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• 제15권1호
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• pp.85-96
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• 1997

The color difference between original and printed copy is affected mainly by ink trapping and optical properties of overprinted ink layer. Since the general expression itself about ink trapping is affected also by the optical properties, the analysis of color difference using the ink trapping only cannot be certain. This study will show a new approaching method for optical analysis of spectral reflectance and the effect of printing sequence on color difference in multi-color overprints under the condition of excluding completely the ink trapping problems by means of using transparent film as a substrate.