• Title/Summary/Keyword: Advanced technology

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Fabrication of CNT Electron Source for Field Emission Displays

  • Nakata, S.;Sawada, T.;Fujikawa, M.;Nishimura, K.;Abe, F.;Hosono, A.;Watanabe, S.;Yamamuro, T.;Shen, Z.;Suzuki, Y.;Okuda, S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1012-1015
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    • 2005
  • We have developed the technique of fabricating triode structure with simple stacking method using a polymer insulator that is suitable for large panel and the activation method after the fabrication. By the techniques, a test panel was manufactured and proves good emission property and uniformity.

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Ultra low sheet resistance on poly silicon film by Excimer laser activation

  • Lim, Hyuck;Yin, Huaxiang;Xianyu, Wenxu;Kwon, Jang-Yeon;Zhang, Xiaoxin;Cho, Hans-S;Kim, Jong-Man;Park, Kyung-Bae;Kim, Do-Young;Jung, Ji-Sim;Noguchi, Takashi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1112-1115
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    • 2005
  • In this study, we performed excimer laser activation on Phosphorus or Boron doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.

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Coherent X-ray Diffraction Imaging with Single-pulse Table-top Soft X-ray Laser

  • Kang, Hyon-Chol;Kim, H.T.;Lee, S.K.;Kim, C.M.;Choi, I.W.;Yu, T.J.;Sung, J.H.;Hafz, N.;Jeong, T.M.;Kang, S.W.;Jin, Y.Y.;Noh, Y.C.;Ko, D.K.;Kim, S.S.;Marathe, S.;Kim, S.N.;Kim, C.;Noh, D.Y.;Lee, J.
    • Proceedings of the Optical Society of Korea Conference
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    • 2008.02a
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    • pp.429-430
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    • 2008
  • We demonstrate coherent x-ray diffraction imaging using table-top x-ray laser at a wavelength of 13.9nm driven by 10-Hz ti:Sapphire laser system at the Advanced Photonics Research Institute in Korea. Since the flux of x-ray photons reaches as high as $10^9$ photons/pulse in a $20{\times}20{\mu}m^2$ field of view, we measured a ingle-pulse diffraction pattern of a micrometer-scale object with high dynamic range of diffraction intensities and successfully reconstructed to the image using phase retrieval algorithm with an oversampling ratio of 1:6. the imaging resolution is $^{\sim}150$ nm, while that is much improved by stacking the many diffraction patterns. This demonstration can be extended to the biological sample with the diffraction limited resolution.

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Data Acquisition and Control System for a Large-scale Superconducting Test Facility (대형 초전도자석 테스트설비의 Data Acquisition&Control시스템)

  • Y. Chu;S. Baek;S. Baang;M. Kim;S. Lee;B. Lim;W. Chung;H. Park;K. Park
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2002.02a
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    • pp.303-305
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    • 2002
  • SSTF(Samsung Superconducting Test Facility) has been constructed at Samsung Advanced Institute of Technology to test the KSTAR(Korea Superconducting Tokamak Advanced Research) superconducting magnets and conductors. The SSTF DAC(Data Acquisition and Control) system basically consists of VME I/O modules, host PCs, and Ethernet links. VxWorks is used for the real-time OS of the VME IOC(Input/output Controller). EPICS (Experimental Physics and Industrial Control System) provides a software architecture for the communication between IOCs and host PCs. For the efficient management of measured data, the database management programs through NFS(Network File System) have been developed and successfully operated. In this paper, the current status of the SSTF DAC system, DBMS(DataBase Management System), recent test results, and future plans are presented.

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4 inch QVGA AMOLED display driven by GaInZnO TFT

  • Kwon, Jang-Yeon;Son, Kyoung-Seok;Jung, Ji-Sim;Kim, Tae-Sang;Ryu, Myung-Kwan;Park, Kyung-Bae;Kim, Jung-Woo;Lee, Young-Gu;Kim, Chang-Jung;Kim, Sun-Il;Park, Young-Soo;Lee, Sang-Yoon;Kim, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.141-144
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    • 2007
  • We demonstrated 4 inch QVGA AMOLED display driven by GaInZnO TFT. The structure of GaInZnO TFT is back channel etch (BCE) which is conventional structure for a-Si TFT. The electron mobility of GaInZnO TFT is $2.6\;cm^2/Vs$ and Vt is 3.8V. It is thought that GaInZnO TFT could be backplane for AMOLED TV.

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Carbon-Nanotube Based Field-Emission Displays for Large Area and Color Applications

  • Choi, Won-Bong;Lee, Nae-Sung;Yi, Whi-Kun;Jin, Yong-Wan;Choi, Yong-Soo;Han, In-Taek;Jang, Hyeong-Yong;Kim, Hoonn-Young;Kang, Jung-Ho;Yun, Min-Jae;Park, Sang-Hyeun;Yu, Se-Gi;Jang, Jae-Eun;You, Jang-Hun;Kim, Jong-Min
    • Journal of Information Display
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    • v.1 no.1
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    • pp.59-62
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    • 2000
  • The first 9-inch carbon nanotube based color field emission displays (FEDs) are integrated using a paste squeeze technique. The panel is composed of 576 x 242 lines with implementation of low voltage phosphors. The uniform and moving images are achieved only at $2V/{\mu}m$, This demonstrates a turning point of nanotube for large area and full color applications.

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