• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.244-244
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• 2006

We developed novel polymer materials composed of thermoresponsive pNIPAAm main chain and photo-resnposive side chains of spirobenzopyran, and analyzed the photoresponsive characteristrics of the aqueous solutions of these copolymers. Further, we prepared various photoresponsive hydrogels composed of the copolymer, and investigated the effect of light irradiation on their properties. As a result, the copolymer exhibited quite unique response to light irradiation and the change in temperature and pH. Especially the drastic photo-induced dehydration was observed in low pH conditions, and photo-induced micro-relief formation was demonstrated using the hydrogel layer composed of the polymer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.258-258
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.209-209
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.88-88
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• 2007

• Polymer Science and Technology
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• v.24 no.1
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• pp.30-37
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• 2013

• Proceedings of the PSK Conference
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• 2001.04a
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• pp.191.2-192
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• 2001

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1631-1633
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• 2008

We demonstrate 4-in QVGA active-matrix electrophoretic display based on ink-jet printed organic transistors on glass substrates. Our TFT array had a bottom-gate, bottom-contact device architecture. The organic semiconductor and gate dielectric were solution processed. The field-effect mobility of the printed devices, calculated in the saturation region, was $0.1{\sim}0.3cm^2/Vs$ at Vg=-20 V.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.971-972
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• 2006

We have demonstrated Carbon Nanotube Back Light Unit (CNT-BLU) which has a triode structure. Local dimming scheme was introduced to the BLU driving system. With this driving method, contrast ratio enhanced 20 times higher than that of conventional Cold Cathode Fluorescent Lamp (CCFL) BLU.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.149-152
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• 2005

We present the characterization of poly-Si TFT fabricated below on Plastic Substrate below $170^{\circ}C$ on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than $290\;cm^2/Vsec$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.20-20
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• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.