• Title/Summary/Keyword: Adhesion Characteristic

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Joining Technology of Flat Panel Photobioreactor Case (평판형 광생물반응기 케이스 접합 기술)

  • Ahn, Dong-Gyu;Lee, Ho Jin;Ahn, Yeong-Su
    • Journal of the Korean Society for Precision Engineering
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    • v.30 no.2
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    • pp.154-163
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    • 2013
  • Adhesive bonding and plastic welding have been widely used to join two plastic materials together. The goal of this paper is to determine a proper joining technology of a pair of flat panel (FP) photobioreactor (PBR) case. The material of the FP PBR case is polycarbonate (PC) plate. Two types of adhesion, including acryl adhesive and two-part epoxy adhesive, as well as two types of plastic welding technology, including ultrasonic welding and thermal welding, are employed for joining of PC plates. In order to influence of the adhesion and welding conditions on the joining characteristics of the PC plates in operational conditions of the FP PBR case, the morphology in the vicinity of the joined region as well as the water and pressure resistance characteristic are investigated. In addition, the variation of the bonding strength of the joined region and deformation behaviors in the vicinity of the joined region according to the adhesion and welding conditions is examined via the lap-shear test. From the results of basic experiments, proper joining technologies are chosen. Using the chosen joining technologies, the FP PBR case are fabricated to perform full-scale durability experiment. The results of the full-scale durability experiment have been shown that the chosen joining technologies can be applicable to fabricate the FP PBR case.

Characteristic of Underfill with Various Epoxy Resin (에폭시 수지에 따른 언더필의 특성에 관한 연구)

  • Noh, Bo-In;Lee, Jong-Bum;Jung, Seung-Boo
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.3 s.40
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    • pp.39-45
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    • 2006
  • This study was investigated the thermal properties of underfill with various epoxy resins using thermal analysis methods such as differential scanning calorimetry (DSC), thermo gravimetry analysis (TGA), dynamic mechanical analysis (DMA) and thermo-mechanical analysis (TMA). And, the adhesion strength of the underfills/FR-4 substrate was evaluated. The glass transition temperature (Tg) of underfill which was composed the cycolaliphatic epoxy resin was lower than that of underfill which was not composed the cycolaliphatic epoxy resin. The thermal degradation of underfill was composed of two processes, which involved chemical reactions between the degrading polymer and oxygen from the air atmosphere. The coefficient of thermal expansion (CTE) of underfill which was composed the cycolaliphatic epoxy resin was higher than that of underfill which was not composed the cycolaliphatic epoxy resin. The excessive curing temperatures caused a weak boundary layer of epoxy resin, which resulted in a deterioration of mechanical properties in the epoxy resin and thus led to poor adhesion property between the underfill/FR-4 substrate.

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Characteristics of MOCVD Cobalt on ALD Tantalum Nitride Layer Using $H_2/NH_3$ Gas as a Reactant

  • Park, Jae-Hyeong;Han, Dong-Seok;Mun, Dae-Yong;Yun, Don-Gyu;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.377-377
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    • 2012
  • Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

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A Study on the Characteristic of MOS structure using $HfO_{2}$ as high-k gate dielectric film ($HfO_{2}$를 이용한 MOS 구조의 제작 및 특성)

  • Park, C.I.;Youm, M.S.;Park, J.W.;Kim, J.W.;Sung, M.Y.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.163-166
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    • 2002
  • We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm, so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

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A study on performance evaluation of rod rubber bushing under static and fatigue loadings (토크 로드 부품의 정하중 및 피로하중하에서의 성능평가 연구)

  • 이순복;김완두
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.14 no.5
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    • pp.1320-1329
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    • 1990
  • A static performance tester for a torque rod assembly was developed to evaluate the three characteristics of the rod rubber bushing : radial spring characteristic, thrust spring characteristic, and rotational torque characteristic. Among the various schemes considered in the conceptual design stage, the final versatile type was determined to perform three different tests in one machine. The performance testing machine carried out radial spring test, thrust spring test, and torque test of the torque rod assembly. Static performance of the torque rod assembly was evaluated with the tester developed and fatigue strength of the assembly was also tested with the servo-hydraulic structural fatigue testing machine. The life of the component was found to be related with the rubber quality and adhesionability between the rubber and the steel rod. The optimum rubber hardness was experimentally found by changing the chemical compositions of rubber, and the adhesion was improved by optimizing the shape of the outer section of a the rubber, this study ensured the development of a reliable torque rod assembly.

The Characteristic of Pt-RTD Fabricated on Si Substrate (실리콘 기판상에 제작된 박막형 Pt-RTD의 특성)

  • Hong, Seok-Woo;Moon, Kyung-Min;Noh, Sang-Soo;Chung, Gwiy-Sang
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1806-1808
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    • 1999
  • The electrical and physical characteristics of MgO and Pt thin-films on Si substrate, deposited by r.f magnetron sputtering. It were analyzed with annealing condition($1000^{\circ}C$ for 120 min) by four point probe, a-step, SEM and XRD. Until $1000^{\circ}C$ of annealing temperature, MgO medium layer had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had $3927ppm/^{\circ}C$ and liner in the temperature range of room temperature ${\sim}400^{\circ}C$.

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Evaluation of Performance of Adhesion and Waterproof Using Polymer-portland-cement Concrete (PPCC(Polymer-portland-cement concrete)를 이용한 방수 및 부착 성능 평가)

  • Kim, Kyung-Hwan;Park, Mi-Yun;Chung, Won-Yong;Moon, Jae-Woo;Jang, Seung-Yup
    • Proceedings of the KSR Conference
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    • 2011.10a
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    • pp.3172-3179
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    • 2011
  • Several materials using polymer-portland-cement concrete have developed to have not only strength of attachment with body, but also waterproof function and strong anti-sodium chloride properties. Especially, in case of railway, unlike other public transportation, it is very difficult to doing the repair and reinforcement work of structure during service time. Therefore, the development and study of materials having characteristics of structural strength, unification behavior with body, and resistance of crack are very important. Accordingly, the characteristic of material of polymer based concrete is indicated compared with the experiment and analysis through this study, and suggested application to railway tunnel, bridge, and concrete track structure.

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Effects of Multi-layer Bragg Reflectors on ZnO-based FBAR Devices

  • Lee, Jae-Young;Mai, Lihn;Pham, Van-Su;Yoon, Gi-Wan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.06a
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    • pp.441-444
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    • 2007
  • In this paper, the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices with high-quality multi-layer reflectors are proposed. The ultrathin Cr film $(300\;\AA-thick)$ between $SiO_2$ film and W film is formed by a sputtering-deposition in order to enhance the adherence at their interfaces. The resonance frequency was observed to vary with the number of the reflectors. This seems to be attributed to the change in the effective thickness of the ZnO film. Also, increasing the number of layers has led to a significant improvement of the series/parallel quality factor.

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A Case Report of a Feral Pig with Suspected Infectious Atrophic Rhinitis Lesions (야생 멧돼지의 전염성위축성비염 소견의 1예)

  • 곽수동;김종섭;연성찬;김용환;서명득;고필옥
    • Journal of Veterinary Clinics
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    • v.18 no.2
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    • pp.185-188
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    • 2001
  • A weakened wild feral pig (a boar of about 15 kg) with snout distortion and characteristic external lesion of infectious atrophic rhinitis was captured at farm land near low mountains in Chinju, Kyeongnam province. This pig was necropsied and then the snout parts and the parenchymal organs were removed. The snout and nose were transversely sectioned at thickness of 1.5 cm interval. Grossly, the right side of the snout was shorted than that of left by reduction of right nasal turbinate length, but the nasal opening exudate was not observed. At necropsy, degeneration, adhesion, occlusion, and asymmetry of left and right sides on the meatus and turbinate were observed and findings of mild pneumonia were observed. Microscopically, the leukocyte infiltration, hyperemia and hyperplasia on the mucosa of the turbinates and septum were observed. The atrophied periosteum and osseous tissue were also observed. But Bordetella bronchiseptica was not identified in culture from nasal swabs. We expect the possibility that the snout distortion of this pig was due to infectious atrophic rhinitis according to these findings.

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Rap Signaling in Normal Lymphocyte Development and Leukemia Genesis

  • Minato, Nagahiro
    • IMMUNE NETWORK
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    • v.9 no.2
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    • pp.35-40
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    • 2009
  • Although Rap GTPases of the Ras family remained enigmatic for years, extensive studies in this decade have revealed diverse functions of Rap signaling in the control of cell proliferation, differentiation, survival, adhesion, and movement. With the use of gene-engineered mice, we have uncovered essential roles of endogenous Rap signaling in normal lymphocyte development of both T- and B-lineage cells. Deregulation of Rap signaling, on the other hand, results in the development of characteristic leukemia in manners highly dependent on the contexts of cell lineages. These results highlight crucial roles of Rap signaling in the physiology and pathology of lymphocyte development.