• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.169-171
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• 1989

The curved active layer inner stripe(CALIS) laser diode has been developed. The tight confinements of current and carrier result in low thershold current(20-30mA) with stable fundamental transverse mode operation up to the output power of 30mW CW.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.257-260
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• 2002

This paper describes the pixel of AMOLED(act ive matrix organic light emitting diode) driving circuit by poly-sl technology. The area per pixel is 278um$\times$278um in 120$\times$160(2.2 inch) Driving the OLEDS with active matrix leads to the lower voltage operation, the lower peak pixel currents and the display with much greater efficiency and brightness The role of the active matrix is to provide a constant current throughout the entire frame time and is eliminating the high currents encountered In the passive matrix approach, This design can support the high resolutions expected by the consumer because the current variation specification is norestricted. The pixel has been designed driving TFT threshold voltage cancellation circuit and wide aperture ratio circuit that communizes 4 pixel. The test simulation results and layout are 11% per threshold-current var Eat ion and 12.5% the aperture ratio of increase.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.10a
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• pp.429-432
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• 2017

In this paper, a full - wave rectifying harvesting circuit with a high-performance comparator is designed. Designed circuits are divided into Negative Voltage Converter and Active Diode stages. The comparator included in the active diode stage is implemented as a 3-stage type and divided into pre-amplification, decision circuit, and output buffer stages. The main purpose of this comparator is to reduce the propagation delay and improve the voltage and power efficiency of the harvesting circuit. The proposed circuit is designed with magna $0.35{\mu}m$ CMOS process and its operation is verified by simulation. The chip area of the designed energy harvesting circuit is $900{\mu}m{\times}712{\mu}m$.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.49-52
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• 2007

Characteristics of an active pixel switch readout circuit were studied by SPICE simulation. A simple readout circuit consists of an operation amplifier, a diode, and a down-counter was suggested, and its successful operation was verified by showing that the differences in the detected signal intensity are accordingly converted to modulation of the voltage pulses generated by the comparator. A scheme to use these pulses to generate the original image was also put forward.

• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.1857-1859
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• 1998

This paper proposes a circuit technique that reduces losses cauased by reverse-recovery characteristics of the diode in converters. In high voltage, high power, Reverse recovery characteristics of the diode gives large stresses to switching devices. To solve the problem, we propose a circuit with active snubber between diode and switch. By controling di/dt rate of thr diode, the proposed technique reduces the losses and the stresses of switching devices.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.11
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• pp.521-528
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• 2003

A varactor diode was utilized in order to expand variable range of the natural oscillation frequency of an active phased-array antenna. We have conformed experimentally that the variable range of the natural oscillation frequency was expanded about three times in the oscillator controlled by the varactor diode. When frequency difference was given to the oscillators in the two elements antenna system, phase difference was appeared between the oscillators. The 2-, 3-, 5-elements patch antenna array was composed for the beam scanning experiments. All the above patch antennas showed good phased array characteristics. The experimental results are as follows that the scanning angle of the 2-elements array antenna is 28.6$^{\circ}$, the 3-elements array antenna is 29.4$^{\circ}$, and the 5-elements array antenna is 26.2$^{\circ}$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.85-91
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• 2008

A Boost Power Factor Correction (PFC) Converter employing Zero Voltage Switching (ZVS) based Compound Active Clamping (CAC) technique is presented in this paper. An Electro Magnetic Interference (EMI) Filer is connected at the line side of the proposed converter to suppress Electro Magnetic Interference. The proposed converter can effectively reduce the losses caused by diode reverse recovery. Both the main switch and the auxiliary switch can achieve soft switching i.e. ZVS under certain condition. The parasitic oscillation caused by the parasitic capacitance of the boost diode is eliminated. The voltage on the main switch, the auxiliary switch and the boost diode are clamped. The principle of operation, design and simulation results are presented here. A prototype of the proposed converter is built and tested for low input voltage i.e. 15V AC supply and the experimental results are obtained. The power factor at the line side of the converter and the converter efficiency are improved using the proposed technique.

• ETRI Journal
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• v.26 no.5
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• pp.509-511
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• 2004

This paper describes a novel current driving circuit for an active matrix organic light emitting diode (AMOLED). The proposed current driving circuit has a lower power consumption and higher chip density for the AMOLED display compared with the conventional one because all elements operate at a normal voltage and are shielded from the high voltage of the panel. The chip size and power consumption of the current driving circuit for an AMOLED can be improved by about 30 to 40% and 10 to 20%, respectively, compared with the conventional one.

• Journal of Electrical Engineering and Technology
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• v.11 no.4
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• pp.939-942
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• 2016

One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N_d) of the active layer on the J-V curve. When the active layer thickness was varied (for N_d = 8×10¹⁷ cm^-3) from 800 nm to 100 nm, the reverse saturation current density (J_o) changed from 3.56×10^-5 A/cm² to 9.62×10^-11 A/cm² and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N_d = 4×10¹⁵ cm^-3), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J_o = 9.62×10^-11 A/cm²) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

• Journal of information and communication convergence engineering
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• v.8 no.3
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• pp.263-266
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• 2010

In this paper, a novel defected ground structure (DGS) pattern with enhanced effective capacitance (varactor diode) and a hole in PCB center is presented. The increase in effective capacitance enables the new DGS pattern to achieve a lower resonance than the DGS pattern for the same etched square dimension. The hole in the center also can make resonator frequency lower with better characteristic. According to the tunable characteristic of varactor diode, the resonant frequencies can be tunable. Simulation results show that a lower resonance is achieved with active device, compared to a common DGS pattern.