• Journal of Electrical Engineering and information Science
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• v.2 no.6
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• pp.202-207
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• 1997

Design and fabrication issues for an L-band GaAs Monolithic Microwave Integrated Circuit(MMIC) Voltage Controlled Oscillator(VCO) as a component of Personal Communications Systems(PCS) Radio Frequency(RF) transceiver are discussed. An ion-implanted GaAs MESFET tailored toward low current and low noise with 0.5mm gate length and 300mm gate width has been used as an active device, while an FET with the drain shorted to the source has been used as the voltage variable capacitor. The principal design was based on a self-biased FET with capacitive feedback. A tuning range of 140MHz and 58MHz has been obtained by 3V change for a 600mm and a 300mm devices, respectively. The oscillator output power was 6.5dBm wth 14mA DC current supply at 3.6V. The phase noise without any buffer or PLL was 93dB/1Hz at 100KHz offset. Harmonic balance analysis was used for the non-linear simulation after a linear simulation. All layout induced parasitics were incorporated into the simulation with EEFET2 non-linear FET model. The fabricated circuits were measured using a coplanar-type probe for bare chips and test jigs with ceramic packages.

• Journal of IKEEE
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• v.3 no.1 s.4
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• pp.39-49
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• 1999

This paper describes a 1 GHz, low-phase-noise CMOS fractional-N frequency synthesizer with an integrated LC VCO. The proposed frequency synthesizer, which uses a high-order delta-sigma modulator to suppress the fractional spurious tones at all multiples of the fractional frequency resolution offset, has 64 programmable frequency channels with frequency resolution of $f_ref/64$. The measured phase noise is as low as -110 dBc/Hz at a 200 KHz offset frequency from a carrier frequency of 980 MHz. The reference sideband spurs are -73.5 dBc. The prototype is implemented in a $0.5{\mu}m$ CMOS process with triple metal layers. The active chip area is about $4mm^2$ and the prototype consumes 43 mW, including the VCO buffer power consumption, from a 3.3 V supply voltage.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1312-1315
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• 2002

This research describes the design of a fully integrated fractional-N frequency synthesizer intended for the local oscillator in IMT-2000 system using 0.18-$\mu\textrm{m}$ CMOS technology and 1.8-V single power supply. The designed fractional-N synthesizer contains following components. Modified charge pump uses active cascode transistors to achieve the high output impedance. A multi-modulus prescaler has modified ECL-like D flip-flop with additional diode-connected transistors for short transient time and high frequency operation. And phase-frequency detector, integrated passive loop filter, LC-tuned VCO having a tuning range from 1.584 to 2.4 ㎓ at 1.8-V power supply, and higher-order sigma-delta modulator are contained. Finally, designed frequency synthesizer provides 5 ㎒ channel spacing with -122.6 dBc/Hz at 1 ㎒ in the WCDMA band and total output power is 28 mW.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.89-95
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• 2003

In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.

• ETRI Journal
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• v.26 no.3
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• pp.229-240
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• 2004

This paper reports on our development of a dual-mode transceiver for a CMOS high-rate Bluetooth system-onchip solution. The transceiver includes most of the radio building blocks such as an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, a variable gain amplifier (VGA), a dc offset cancellation circuit, a quadrature local oscillator (LO) generator, and an RF front-end. It is designed for both the normal-rate Bluetooth with an instantaneous bit rate of 1 Mb/s and the high-rate Bluetooth of up to 12 Mb/s. The receiver employs a dualconversion combined with a baseband dual-path architecture for resolving many problems such as flicker noise, dc offset, and power consumption of the dual-mode system. The transceiver requires none of the external image-rejection and intermediate frequency (IF) channel filters by using an LO of 1.6 GHz and the fifth order onchip filters. The chip is fabricated on a $6.5-mm^{2}$ die using a standard $0.25-{\mu}m$ CMOS technology. Experimental results show an in-band image-rejection ratio of 40 dB, an IIP3 of -5 dBm, and a sensitivity of -77 dBm for the Bluetooth mode when the losses from the external components are compensated. It consumes 42 mA in receive ${\pi}/4-diffrential$ quadrature phase-shift keying $({\pi}/4-DQPSK)$ mode of 8 Mb/s, 35 mA in receive GFSK mode of 1 Mb/s, and 32 mA in transmit mode from a 2.5-V supply. These results indicate that the architecture and circuits are adaptable to the implementation of a low-cost, multi-mode, high-speed wireless personal area network.