• Title/Summary/Keyword: Accumulation layer

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Dynamic Behaviors of Redox Mediators within the Hydrophobic Layers as an Important Factor for Effective Microbial Fuel Cell Operation

  • Choi, Young-Jin;Kim, Nam-Joon;Kim, Sung-Hyun;Jung, Seun-Ho
    • Bulletin of the Korean Chemical Society
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    • v.24 no.4
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    • pp.437-440
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    • 2003
  • In a mediator-aided microbial fuel cell, the choice of a proper mediator is one of the most important factors for the development of a better fuel cell system as it transfers electrons from bacteria to the electrode. The electrochemical behaviors within the lipid layer of two representative mediators, thionin and safranine O both of which exhibit reversible electron transfer reactions, were compared with the fuel cell efficiency. Thionin was found to be much more effective than safranine O though it has lower negative formal potential. Cyclic voltammetric and fluorescence spectroscopic analyses indicated that both mediators easily penetrated the lipid layer to pick up the electrons produced inside bacteria. While thionin could pass through the lipid layer, the gradual accumulation of safranine O was observed within the layer. This restricted dynamic behavior of safranine O led to the poor fuel cell operation despite its good negative formal potential.

Error Accumulation and Transfer Effects of the Retrieved Aerosol Backscattering Coefficient Caused by Lidar Ratios

  • Liu, Houtong;Wang, Zhenzhu;Zhao, Jianxin;Ma, Jianjun
    • Current Optics and Photonics
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    • v.2 no.2
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    • pp.119-124
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    • 2018
  • The errors in retrieved aerosol backscattering coefficients due to different lidar ratios are analyzed quantitatively in this paper. The actual calculation shows that the inversion error of the aerosol backscattering coefficients using the Fernald backward-integration method increases with increasing inversion distance. The greater the error in the lidar ratio, the faster the error in the aerosol backscattering coefficient increases. For the same error in lidar ratio, the smaller actual aerosol backscattering coefficient will get the larger relative error of the retrieved aerosol backscattering coefficient. The errors in the lidar ratios for dust or the cirrus layer have great impact on the retrievals of backscattering coefficients. The interval between the retrieved height and the reference range is one of the important factors for the derived error in the aerosol backscattering coefficient, which is revealed quantitatively for the first time in this paper. The conclusions of this article can provide a basis for error estimation in retrieved backscattering coefficients of background aerosols, dust and cirrus layer. The errors in the lidar ratio of an aerosol layer influence the retrievals of backscattering coefficients for the aerosol layer below it.

Comparison of Thatch Accumulation in Warm-Season and Cool-Season Turfgrasses under USGA and Mono-layer Soil Systems (USGA 지반 및 약식지반에서 난지형과 한지형 잔디의 대취축적 비교)

  • Kim, Kyoung-Nam;Kim, Byoung-Jun
    • Journal of the Korean Institute of Landscape Architecture
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    • v.38 no.1
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    • pp.129-136
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    • 2010
  • This study was initiated to investigate thatch accumulation in several turfgrasses grown under two soil systems. The 45 centimeter deep USGA system was constructed with rootzone, intermediate and drainage layers. The mono-layer system, however, was made with only a 30cm rootzone layer. Turfgrasses used in the study were comprised of 3 varieties from Korean lawngrass of Warm-Season Grass(WSG) and 3 blends and 3 mixtures from Cool-Season Grass(CSG). A total of 9 turfgrass treatments were replicated three times in RCBD in both systems. Cultural practices for the research plot followed a typical maintenance program for highly managed turf. Treatment differences for thatch accumulation were observed among the turfgrasses in both soil systems. Thatch under the USGA system was 9% greater than under the mono-layer system due to its more favorable conditions for turf growth. Higher thatch depth was found with Korean lawngrass, 34~87% in the USGA system and 16~75% in the mono-layer system when compared with CSG. Among WSG, the Joongji variety was the highest in thatch layer under both the USGA and mono-layer systems. Kentucky bluegrass(KB) was the greatest among CSG, since it is a rhizomatous-type in growth habit, resulting in faster production of organic matter over bunch-type of tall fescue and perennial ryegrass. Proper depth in the thatch layer was known to be beneficial by enhancing the resiliency and wear tolerance of the turf in athletic fields. Thus, KB was considered to be a very excellent turfgrass in terms of turf quality, environmental performance, physical properties and soccer player safety. However, disadvantages such as poor water-holding properties, more inclined to injury from environmental stresses and severe diseases and insect injury were also expected where thatch was excessively accumulated. Therefore, these results demonstrate that more frequent measures for controlling thatch such as vertical mowing, topdressing or coring should be employed for soccer fields with Korean lawngrass and KB over other turfgrasses.

Atomic layer chemical vapor deposition of Zr $O_2$-based dielectric films: Nanostructure and nanochemistry

  • Dey, S.K.
    • Electrical & Electronic Materials
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    • v.16 no.9
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    • pp.64.2-65
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    • 2003
  • A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{+}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{+}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

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Preparation of MgO Protective layer by reactive magnetron Sputtering (반응성 스퍼트링에 의한 MgO 유전체 보호층 형성에 관한 연구)

  • Ha, H. J.;Lee, W. G.;Ryu, J. H.;Song, Y.;Cho, J. S.;Park, C. H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.05a
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    • pp.59-62
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    • 1996
  • Plasma displays (PDP) as a large area wall-hanging display device are rabidly developed with flat CRT, TPT LCD and etc. Especially, AC Plasma Display Panels(AC PDPs) have the inherent memory function which is effective for large area displays. The memory function in AC PDPs is caused by the accumulation of the electrical charge on the protecting layer formed on the dielectric layer. This MgO protective layer prevents the dielectric layer from sputtering by ion in discharge plasma and also has the additional important roll in lowering the firing voltage due to the large secondary electron emission coefficient). Until now, the MgO Protective layer is mainly formed by E-Beam evaporation. With increasing the panel size, this process is difficult to attain cost reduction, and are not suitable for large quantity of production. To the contrary, the methode of shuttering are easy to apply on mass production and to enlarge the size of the panel and shows the superior adhesion and uniformity of thin film. In this study, we have prepared MgO protective layer on AC PDP Cell by reactive magnetron sputtering and studied the effect of MgO layer on the surface discharge characteristics of ac PDP.

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Metabolism of Dimethylphthalate by Aspergillus niger

  • Pradeepkmar;Sharanagouda;Karegoudar, T.B.
    • Journal of Microbiology and Biotechnology
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    • v.10 no.4
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    • pp.518-521
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    • 2000
  • Aspergillus niger is capable of metabolizing dimethyphthalate. The maximum weight of mycelium wa observed afterabout 6-8 dys of incubation. A TLC analysis revealed the accumulation of metabolites in the resting cell culture. Monomethylphthalate, phthalate, and protocatechuate were shown to be the intermediates by thin layer chromatographic and spectrophotometric analyses. The fungus metabolized dimethylphthalate through monomethylphthalate, phthalate, and protocatechuate as evidenced by the oxygen uptake and an enzymatic analysis. The terminal aromatic metabolite, protocatechuate, is metabolized via the ortho-cleavage pathway.

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Electrical Characteristics of GaAs MESFET's Considering Channel Charge (GaAs MESFET의 채널전하에 의한 전기적 특성해석)

  • Won, Chang-Sub;Hong, Jea-Il
    • Proceedings of the KIEE Conference
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    • 2005.10a
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    • pp.165-168
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    • 2005
  • In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current satulation. When electron velocity is saturated, deletion layer is still open channel and it plays a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.

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Assessment on Water Movement in Paddy-Upland Rotation Soil Scheduled for Ginseng Cultivation (답전윤환 인삼재배 예정지 토양의 물 이동특성 평가)

  • Hur, Seung-Oh;Lee, Yun-Jeong;Yeon, Byung-Ryul;Jeon, Sang-Ho;Ha, Sang-Geon;Kim, Jeong-Gyu
    • Korean Journal of Medicinal Crop Science
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    • v.17 no.3
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    • pp.204-209
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    • 2009
  • This study was conducted to assess water movement in paddy-upland rotation soil scheduled for ginseng cultivation through the measurement of infiltration and permeability of soil water. Soil sample was divided with four soil layers. The first soil layer (to 30cm from top soil) was loamy sand, the second and the third soil layers (30$\sim$70 ㎝) were sand, and the fourth (< 120 ㎝) was sandy loam. The soil below 130 ㎝ of fourth soil layer was submerged under water. The shear strength, which represents the resisting power of soil against external force, was 3.1 kPa in the first soil layer. This corresponded to 1/8 of those of another soil layer and this value could result in soil erosion by small amount of rainfall. The rates of infiltration and permeability depending on soil layers were 39.86 cm $hr^{-1}$ in top soil, 2.34 cm $hr^{-1}$ in 30$\sim$70 ㎝ soil layer, 5.23 cm $hr^{-1}$ and 0.18 cm $hr^{-1}$ in 70$\sim$120 ㎝ soil layer, with drain tile, and without drain tile, respectively. We consider that ground water pooled in paddy soil and artificial formation of soil layer could interrupt water canal within soil and affect negatively on water movement. Therefore, we suggest that to drain at 5 m intervals be preferable when it makes soil dressing or soil accumulation to cultivate ginseng in paddy-upland rotation soil to reduce failure risk of ginseng cultivation.

Dependence of the Thickness of Spacer Layers on the Current Voltage Characteristics of DB Resonant Tunneling Diodes Analyzed with a Self-Consistent Method (스페이서층 두께변화에 따른 공명터널링 다이오드에서 전류-전압 특성의 자기무모순법에 의한 해석)

  • 김성진;이상훈;성영권
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.3
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    • pp.46-52
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    • 1994
  • We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure. using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers which have not been considered in the flat-band model reported by Esaki. so that it is better suited to explain experimental results. The structure used is an $AL_{0.5}Ga_{0.5}AS/GaAs/Al_{0.5}Ga_{0.5}AS$ single quantum well. In this work. we estimate the theoretical current-voltage characteristics of the same structure, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers sandwiched between the barrier and highly n-doped GaAs contact layer.

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Current-voltage characteristics change of n-type Si films by electric field effect (전장 효과에 의한 n-Si 박막의 전류-전압 특성 변화)

  • 김윤석;김성관;홍승범;노광수
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.133-133
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    • 2003
  • 최근에 강유전체 매체와 원자력 현미경 (Atomic Force Microscopy, AFM)을 이용한 초고밀도 정보 저장 장치에 대한 연구가 활발히 진행되고 있다. 이와 아울러 나도 크기의 도메인에 대하 연구에 있어서 PZT 박막의 분극 방향에 따른 SrRuO$_3$의 저항 변화를 AFM 탐침을 이용하여 감지하는 방법을 제안하였다. 본 연구에서는 Metal tip/semiconductor/barrier oxide/ferroelectric 구조에서 강유전체 분극에 의한 저항 변화의 가능성을 실험하고자, 이와 등가 구조인 Pt tip/n-Si/SiO$_2$ 구조에서 Pt 탐침과 반도체 층 사이의 I-V 특성을 측정함으로써, 게이트 전압에 따른 반도체 층의 저항변화에 대해서 분석해 보았다. 그 결과 게이트 전압에 따라서 과밀 지역 (accumulation layer)과 공핍 지역 (depletion layer)이 형성됨에 따라서 반도체 층의 정항이 변하여 I-V 특성이 변하게 됨을 관찰하였으며, 이 결과로부터 분극 방향에 따라서도 반도체 층의 저항이 변할 수 있음을 알 수 있었다.

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