• 대한화학회지
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• 제43권6호
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• pp.636-643
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• 1999

PDP(plasma display panel)의 녹색 광원으로 유망한 $Zn_{2-x}Mn_xSiO_4$ 헝광체를 1300$^{\circ}C$에서 고상반응법으로 제조한 후 900$^{\circ}C$에서 후속 열처리를 실시하면 녹색 형광의 강도가 현저히 증가한다. 열처리를 통한 형광 강도의 향상과 망간의 산화 상태 및 국부 구조 변화와의 관계를 파악하고자 망간 K 흡수단의 엑스선 흡수 스펙트럼을 분석하였다. $1s{\rightarrow}3d$ 전이에 해당하는 프리엣지(preedge) 봉우리와 XANES 스펙트럼을 분석한 결과, 망간은 열처리와 무관하게 +2가의 산화 상태를 유지하였으며 Zn 자리를 치환하는 것으로 밝혀졌다. 또한 EXAFS 스펙트럼의 분석을 통하여, Mn은 $MnO_4$ 사면체를 형성하고 Mn-O 쌍의 결합 길이와 디바이월러 인자(Debye-Waller factor)는 열처리 후 공히 감소함을 알 수 있었다.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.5-6
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• 2002

The new spectrometer for X-ray Induced Electron Emission Spectroscopy (XIEES) .has been recently developed in KRISS in collaboration with PTI (Russia). The spectrometer allows to perform research using the XAFS, SXAFS, XANES techniques (D.C.Koningsberger and R.Prins, 1988) as well as the number of techniques from XIEES field(L.A.Bakaleinikov et all, 1992). The experiments may be carried out with registration of transmitted through the sample x-rays (to investigate bulk samples) or/and total electron yield (TEY) from the sample surface that gives the high (down to several atomic mono-layers in soft x-ray region) near surface sensitivity. The combination of these methods together give the possibility to obtain a quantitative information on elemental composition, chemical state, atomic structure for powder samples and solids, including non-crystalline materials (the long range order is not required). The optical design of spectrometer is made according to Johannesson true focusing schematics and presented on the Fig.1. Five stepping motors are used to maintain the focusing condition during the photon energy scan (crystal angle, crystal position along rail, sample goniometer rail angle, sample goniometer position along rail and sample goniometer angle relatively of rail). All movements can be done independently and simultaneously that speeds up the setting of photon energy and allows the using of crystals with different Rowland radil. At present six curved crystals with different d-values and one flat synthetic multilayer are installed on revolver-type monochromator. This arrangement allows the wide range of x-rays from 100 eV up to 25 keV to be obtained. Another 4 stepping motors set exit slit width, sample angle, channeltron position and x-ray detector position. The differential pumping allows to unite vacuum chambers of spectrometer and x-ray generator avoiding the absorption of soft x-rays on Be foil of a window and in atmosphere. Another feature of vacuum system is separation of walls of vacuum chamber (which are deformed by the atmospheric pressure) from optical elements of spectrometer. This warrantees that the optical elements are precisely positioned. The detecting system of the spectrometer consists of two proportional counters, one scintillating detector and one channeltron detector. First proportional counter can be used as I/sub 0/-detector in transmission mode or by measuring the fluorescence from exit slit edge. The last installation can be used to measure the reference data (that is necessary in XANES measurements), in this case the reference sample is installed on slit knife edge. The second proportional counter measures the intensity of x-rays transmitted through the sample. The scintillating detector is used in the same way but on the air for the hard x-rays and for alignment purposes. Total electron yield from the sample is measured by channeltron. The spectrometer is fully controlled by special software that gives the high flexibility and reliability in carrying out of the experiments. Fig.2 and fig.3 present the typical XAFS spectra measured with spectrometer.

• 한국방사선학회논문지
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• 제15권2호
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• pp.173-179
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• 2021

디지털 래디오그라피 시스템에서 발생하는 산란선은 신호의 증가를 가져오는 장점도 있지만 피사체를 투과한 엑스선 영상의 해상도 저하, 노이즈 증가로 궁극적인 검출능이 감소된다. 공간주파수 도메인에서 해상도를 평가하기 위한 변조전달함수(modulation-transfer function, MTF)에서 간접적으로 산란선을 측정하는 방법은 제로-주파수에 해당하는 변조전달함수 값이 강하되는 정도로 간주할 수 있다. 본 연구는 환자 조직 등가물질로 폴리메틸메타아크릴레이트(polymethyl methacrylate, PMMA)를 사용하였으며 다양한 두께에 대한 변조전달함수를 획득하여 산란선이 해상도에 미치는 영향을 정량화하였다. PMMA 두께 증가에 따라 엑스선 영상 신호는 35 ~ 83%까지 감소되는 것이 관찰되었고, 이는 PMMA에 엑스선이 흡수 혹은 산란되는 양상으로 판단되며 이러한 결과는 변조전달함수를 저하시키는 것과 동시에 산란선 비율을 증가시키는 결과로 나타났다. PMMA에 의한 변조전달함수 저하를 보정하기 위한 방법은 간접변환방식 검출기에서 발생되는 빛 퍼짐 경향까지 절단하여 변조전달함수 값의 상승을 가져왔다. 보다 합리적인 방법으로 경계확산함수(edge-spread function, ESF) 혹은 선확산함수(line-spread function, LSF)에서의 피팅, 제로 값으로 채우는 처리 등이 이루어져야 할 것으로 사료된다.

• 한국결정성장학회지
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• 제7권1호
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• pp.6-17
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• 1997

Czochralski법으로 용융상태에서의 조성이 congruent(48.6 mol%$Li_2O$), stoichiomet-ric(50.0 mol%$Li_2O$), Li-rich(54.6 mol%$Li_2O$, 58 mol%$Li_2O$), 한 결정과 congruent한 조성에 $K_2$O를 6wt.% 첨가한 결정을 c-축 방향으로 성장시켰다. 성장된 결정들은 분말 X-선 회절 실험에 의해 확인하고 편광 현미경과 투과 X-선 Laue법에 의해 축을 결정한 후 절단하여 65 mol%$Li_2O$의 Li-rich 2-phase powder에서 VTE 처리한다. VTE 처리한 시료는 상온에서 결정내 $Fe^{3+}$ 이온에 대한 EPR 스펙트럼과 UV-스펙트럼을 측정하고 이 온도에서의 IR-스펙트럼은 $OH^-$ 이온 농도를 증가시키기 위하여 수증기 분위기에서 열처리한 후 측정한다. 측정 결과를 as grown 상태의 결정에 대한 결과와 비교 분석한다. 상온에서의 결정내 $Fe^{3＋}$ 이온에 대한 EPR 실험 결과 VTE 처리한 시료들의 EPR 스펙트럼은 허용되지 않은 천이에 의한 스펙트럼이 사라지고 허용된 천이에 의한 스펙트럼은 세기가 증가하며 lineshape가 거의 대칭적으로 되고 선폭도 훨씬 줄어든다. 상온에서의 각 시료에 대한 UV-스펙트럼의 흡수단은 VTE 처리하면 단파장쪽으로 이동하며 VTE 처리한 모든 시료의 흡수단이 거의 동일하다. $OH^-$이온에 의한 IR-흡수 스펙트럼은 VTE 처리한 시료의 경우 $3465\textrm{cm}^{-1}$ 성분 스펙트럼이 현저하게 중가한다. 이 결과에 의하면 본 실험과 같은 조건에서 VTE 처리한 시료들은 결정내 [Li]/[Nb] 비가 거의 1인 stoichiometric한 결정이 되었음을 알 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.397-397
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• 2013

The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

• 한국콘텐츠학회논문지
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• 제13권3호
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• pp.204-210
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• 2013

변형근치유방절제술을 시행한 환자는 일반 여성에 비해 수술로 인한 양측 유방의 두께 차이가 나타나게 되고 이에 따른 감약 차가 생기게 된다. 이에 본 연구는 디지털 영상 특성평가의 객관적인 기준이 되는 MTF를 측정하여 변형근치유방절제술을 시행한 환자들의 흉부촬영에서 적합한 Ion chamber 조합의 기준을 제시하고자 하였다. 디텍터에 위치한 chamber에 좌측 1, 우측 2, 가운데 3으로 번호를 지정하고 엣지팬텀을 부착하여 실험 영상을 획득하였다. 획득한 영상의 해상력 특성 평가는 Matlab(R2007a)를 이용하여 50% MTF 공간주파수의 해상력 평가와 흡수선량을 측정하였다. 실험결과에서 1+3과 2+3조합의 평균 노출조건, 공간주파수, 흡수선량은 각각 2.745 mAs, 1.925 lp/mm, 0.668 mGy로 다른 조합과 비교하여 적은 선량으로 높은 해상력 특성과 높은 DQE를 나타내었다. 따라서 변형근치유방절제술을 시행한 환자의 디지털 흉부영상의 촬영에서는 본 연구에서 제시하는 chamber 조합은 피폭선량 감소와 영상 화질의 향상에 대한 보상이 가능하여 향후 임상에서 적용 및 활용 가능한 chamber 기준이 될 것으로 사료된다.

• 한국재료학회지
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• 제22권8호
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• pp.439-444
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• 2012

To compare the photocatalytic performances of titania for purification of waste water according to applied voltages and doping, $TiO_2$ films were prepared in a 1.0 M $H_2SO_4$ solution containing $NH_4F$ at different anodic voltages. Chemical bonding states of F-N-codoped $TiO_2$ were analyzed using surface X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the co-doped $TiO_2$ films was analyzed by the degradation of aniline blue solution. Nanotubes were formed with thicknesses of 200-300 nm for the films anodized at 30 V, but porous morphology was generated with pores of 1-2 ${\mu}m$ for the $TiO_2$ anodized at 180 V. The phenomenon of spark discharge was initiated at about 98 V due to the breakdown of the oxide films in both solutions. XPS analysis revealed the spectra of F1s at 684.3 eV and N1s at 399.8 eV for the $TiO_2$ anodized in the $H_2SO_4-NH_4F$ solution at 180 V, suggesting the incorporation of F and N species during anodization. Dye removal rates for the pure $TiO_2$ anodized at 30 V and 180 V were found to be 14.0% and 38.9%, respectively, in the photocatalytic degradation test of the aniline blue solution for 200 min irradiation; the rates for the F-N-codoped $TiO_2$ anodized at 30 V and 180 V were found to be 21.2% and 65.6%, respectively. From the results of diffuse reflectance absorption spectroscopy (DRS), it was found that the absorption edge of the F-N-codoped $TiO_2$ films shifted toward the visible light region up to 412 nm, indicating that the photocatalytic activity of $TiO_2$ is improved by appropriate doping of F and N by the addition of $NH_4F$.

• 한국전자통신학회논문지
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• 제15권4호
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• pp.665-670
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• 2020

CIGS 박막 태양 전지의 버퍼층은 흡수층과 윈도우층 사이의 밴드정렬(band alignment)을 통해 에너지 변환 효율을 향상시킨다. ZnS는 무독성의 II-VI 반도체 화합물로서 직접천이형 광대역 밴드갭과 n형 전도성을 가지며, 높은 광투과성, 높은 굴절률 등의 우수한 전기적, 광학적 특성을 가지고 있고, 우수한 격자정합을 가지는 물질이다. 이 연구에서, RF 마그네트론 스퍼터링 방법에 의해 증착 후 급속 열처리에 의해 제작된 ZnS 버퍼층 박막의 구조적, 광학적 특성의 상관관계에 대해 고찰하였다. (111), (220), (311) 면의 섬아연광 입방정 구조를 확인할 수 있고, 상대적으로 저온에서 급속열처리를 수행한 시료에서는 (002) 면의 우르쯔광 육방정 구조가 함께 나타나는 다결정이 되었다. 고온에서 급속열처리 수행한 시료에서는 섬아연광 입방정 구조의 단결정으로 상전이 된다. 화학적 성분 분석을 통해서 Zn/S의 비율이 화학양론에 근접한 시료에서 섬아연광 입방정 구조의 단결정이 나타났음을 확인하였다 급속열처리 온도가 증가할수록 흡수단이 다소간 단파장 쪽으로 이동되고, 가시광 파장 범위에서 평균 광투과율이 증가하는 경향성을 보이며 500℃ 조건에서는 80.40%로 향상되었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.