• 한국결정성장학회지
• /
• 제13권6호
• /
• pp.279-283
• /
• 2003

본 연구에서는 ZnTe에 S 원자를 소량 첨가한 ZnTe : S 단결정 박막이 열적적층법에 의하여 GaAs(100) 기판 위에 성장되었다. S 원자에 의한 효과를 알기 위하여 ZnTe : S 단결정 박막의 광발광 특성을 조사하였다. 저온 광발광 스펙트럼에서 등전자적 중심(isoelectronic center)으로 보이는 2.339 eV의 피크가 관측되었고, ZnTe 단결정 박막의 광발광 스펙트럼에서 근원을 알 수 없었던 발광 스펙트럼은 관측되지 않았다. 온도에 따른 가벼운 양공 자유 엑시톤의 세기 변화는 외부자기포획(extrinsic self-trapping)으로 설명하였다. 그리고 상온에서 에너지 띠간격 흡수단 근처의 발광선이 관측되었다.

• 한국전기전자재료학회논문지
• /
• 제16권12호
• /
• pp.1091-1096
• /
• 2003

Ion implantation in polymeric materials can induce dramatic chemical modifications, such as bond breaking, cross linking, formation of new chemical products, which have strong influences on the macroscopic properties of the materials. In this study ion implantation was performed onto polymer, PC(polycarbonate), in order to investigate change of the optical transmittance property focusing ultraviolet ray range(200-400nm). PC was irradiated with N, Ar, Kr, Xe ions at the ion energy of 50keV and the dose range of 5 ${\times}$ 10$\^$15/, 1 ${\times}$ 10$\^$16/, 7${\times}$10$\^$16/ ions/$\textrm{cm}^2$. FT-IR, XPS, UV/Vis transmittance spectroscopy measurement technologies were employed to obtain chemical. structural properties and optical transmittance of irradiated polymer. The original PC(unimplanted) is quite transparent that it has more than 88% transmittance in the range UV-A(320∼400nm), but after ion implantation, surface colors were changed to the dark brown and the transmittance of UV ray decreased for all implantation condition, and the absorption edge was shift to visible range with increasing mass of implanted ion species and dose.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2007년도 추계학술대회 논문집
• /
• pp.143-146
• /
• 2007

Birnessite-type manganese dioxide($MnO_2$) was coated uniformly onto carbon nanotubes (CNTs) through a spontaneous direct redox reaction between CNTs and permanganate ions($MnO_4\;^-$). The initial specific capacitance of the $MnO_2/CNT$ nanocomposite in an organic electrolyte at a large current density of 1 A/g was 250 F/g, which is equivalent to 139 mAh/g based on the total weight of the electrode material including the electroactive material, conducting agent and binder. The specific capacitance of the $MnO_2$ in the $MnO_2/CNT$ nanocomposite was as high as 580 F/g (320 mAh/g), indicating excellent electrochemical utilization of the $MnO_2$. The addition of CNTs as a conducting agent can improve the high rate capability of $MnO_2/CNT$ nanocomposite considerably. An analysis of the in-situ X-ray absorption near-edge structure (XANES) showed an improvement in the structural and electrochemical reversibility of the $MnO_2/CNT$ nanocomposite by heat-treatment.

• 한국전기전자재료학회논문지
• /
• 제22권3호
• /
• pp.269-276
• /
• 2009

Antimony doped tin oxide ($SnO_2:Sb$) films, which are used as the front contact and back reflector of thin film solar cells, have been deposited by d,c, magnetron sputtering. The dependence of electrical and optical properties of the films on the preparation conditions, such as $O_2$ gas ratio, substrate temperature, annealing temperature was investigated. The sputter gas composition was found to affect the properties of the films. With incorporating $O_2$ gas, the electrical and optical properties of films significantly were improved. The minimum resistivity and optical transmittance over 80 % in visible region were obtained at the oxygen concentration of 30 %, When the substrate temperature was higher, the resistivity of $SnO_2:Sb$ films was decreased, while the absorption edge shifted to shorter wavelength, indicating higher optical band gap. Heat treatment over $600^{\circ}C$ resulted in poorer electrical and optical properties due to SnO phase (102) plane.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.114-114
• /
• 2010

In this study, structural properties and photoluminescent characteristics of thin film rhombohedral zinc orthosilicate doped with manganese ($Zn_2SiO_4:Mn$) were investigated. The $Zn_2SiO_4:Mn$ films showed a pronounced absorption edge in the near ultraviolet wavelength region and a high optical transparency in the visible spectral range. The maximum transmittance reached 0.922 at 597 nm, which was very close to the transmittance of the fused quartz substrate alone (0.935). The $Zn_2SiO_4:Mn$ films were composed of rhombohedral polycrystalline grains with random crystallographic orientation. The broad-band photoluminescence emission peaked at around 525 nm was observed from the $Zn_2SiO_4:Mn$ films, which was ascribed to the radiative relaxation from the $^4T_1$ lowest excitation state to $^6A_1$ ground state of 3d5 electrons in divalent manganese ion. The excitation band exhibited a peak maximum at 259 nm in the near ultraviolet region, which was considered to be associated with the charge transfer transition of divalent Mn ion in the $Zn_2SiO_4$ system.

• Progress in Superconductivity
• /
• 제12권1호
• /
• pp.41-45
• /
• 2010

Low temperature micro-calorimeters have been employed in the field of high resolution alpha spectrometers. These alpha detectors typically consist of a superconducting or metal absorber and a temperature sensor. The temperature sensor can be a transition edge sensor (TES), a metallic magnetic calorimeter (MMC) or other low temperature detectors for an accurate measurement of temperature change due to an alpha particle absorption. We report a recent study of the heat flow between a replaceable absorber and a temperature sensor. A piece of gold foil in $2.4{\times}2.7{\times}0.03\;mm^3$ is used as an absorber. A $40\;{\mu}m$ diameter Au:Er paramagnetic sensor is attached to another small piece of gold foil in $400{\times}200{\times}30\;{\mu}m^3$ to serve as the temperature sensor. This sensor assembly, Au:Er and gold foil, is placed on a miniature SQUID susceptometer in a gradiometric configuration. The thermal connection between the absorber and the sensor was made with three gold bonding wires. The measured thermal conductance shows a linear dependence to the temperature. The values are in a good agreement with Wiedemann-Franz type thermal conductance of the gold wires.

• Journal of the Optical Society of Korea
• /
• 제16권2호
• /
• pp.151-156
• /
• 2012

Reflective polarizers can be used as luminance enhancement films for LCD backlights via the polarization recycling process. The optical performances of a wire grid polarizer (WGP) as a reflective polarizer adopted in edge-lit backlights were investigated by luminance evaluation and a time-domain simulation technique. The results were compared to those of a commercial dielectric multilayer film. The luminance gain factor of WGP was smaller than that of the multilayer film by 18%. This was attributed to a much larger internal loss of WGP due to light absorption by metal wires. The internal losses of both reflective polarizers and the polarization conversion efficiency of the backlight were obtained numerically based on a phenomenological model. The optical performances of WGP were optimized by using a time-domain simulation technique. The luminance gain increased and was found to become comparable to, but slightly less than the case of the dielectric multilayer film with decreasing line width.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
• /
• 한국우주과학회 2009년도 한국우주과학회보 제18권2호
• /
• pp.33.2-33.2
• /
• 2009

Diffuse ionized gas (DIG or warm ionized medium, WIM) outside traditional regions is a major component of the interstellar medium (ISM) not only in our Galaxy, but also in other galaxies. It is generally believed that major fraction of the Halpha emission in the DIG is provided by OB stars. In the "standard" photoionization models, the Lyman continuum photons escaping from bright H II regions is the dominant source responsible for ionizing the DIG. Then, a complex density structure must provide the low-density paths that allow the photons to traverse kiloparsec scales and ionize the gas far from the OB stars not only at large heights above the midplane, but also within a galactic plane. Here, I present Monte-Carlo models to examine the propagation of the ionizing radiation leaked out of traditional H II regions into the diffuse ISM applied to two face-on spirals M 51 and NGC 7424. We find that the "standard" scenario requires absorption too unrealistically small to be believed, but the obtained scale-height of the galactic disk is consistent with those of edge-on galaxies. We also report that the probability density functions of the Halpha intensities of the DIG and H II regions in the galaxies are log-normal, indicating the turbulence property of the ISM.

• 한국세라믹학회지
• /
• 제44권6호
• /
• pp.303-307
• /
• 2007

Transparent In-doped zinc oxide (IZO) thin films are deposited with variation of pulsed DC power at Ar atmosphere on coming 7059 glass substrate by pulsed DC magnetron sputtering. A c-axis oriented IZO thin films were grown in perpendicular to the substrate. The optical transmittance spectra showed high transmittance of over 80% in the UV-visible region and exhibited the absorption edge of about 350 nm. Also, the IZO films exhibited the resistivity of ${\sim}10^{-3}{\Omega}\;cm$ and the mobility of ${\sim}6cm/V\;s$. Organic Light-emitting diodes (OLEDs) with IZO/N,N'-diphenyl-N, N'-bis(3-methylphenl)-1, 1'-biphenyl-4,4'-diamine (TPD)/tris (8-hydroxyquinoline) aluminum ($Alq_3$)/LiF/Al configuration were fabricated. LiF layer inserted is used as an interfacial layer to increase the electron injection. Under a current density of $100\;mA/cm^2$, the OLEDs show an excellent efficiency (9.4 V turn-on voltage) and a good brightness ($12000\;cd/m^2$) of the emission light from the devices. These results indicate that IZO films hold promise for anode electrodes in the OLEDs application.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.393-394
• /
• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ films to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of Ar:$O_2$=10:90~99.33:0.66 ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.