• Title/Summary/Keyword: Absorption band shift

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Effects of Curing Temperature on the Optical and Charge Trap Properties of InP Quantum Dot Thin Films

  • Mohapatra, Priyaranjan;Dung, Mai Xuan;Choi, Jin-Kyu;Jeong, So-Hee;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.32 no.1
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    • pp.263-272
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    • 2011
  • Highly luminescent and monodisperse InP quantum dots (QDs) were prepared by a non-organometallic approach in a non-coordinating solvent. Fatty acids with well-defined chain lengths as the ligand, a non coordinating solvent, and a thorough degassing process are all important factors for the formation of high quality InP QDs. By varying the molar concentration of indium to ligand, QDs of different size were prepared and their absorption and emission behaviors studied. By spin-coating a colloidal solution of InP QD onto a silicon wafer, InP QD thin films were obtained. The thickness of the thin films cured at 60 and $200^{\circ}C$ were nearly identical (approximately 860 nm), whereas at $300^{\circ}C$, the thickness of the thin film was found to be 760 nm. Different contrast regions (A, B, C) were observed in the TEM images, which were found to be unreacted precursors, InP QDs, and indium-rich phases, respectively, through EDX analysis. The optical properties of the thin films were measured at three different curing temperatures (60, 200, $300^{\circ}C$), which showed a blue shift with an increase in temperature. It was proposed that this blue shift may be due to a decrease in the core diameter of the InP QD by oxidation, as confirmed by the XPS studies. Oxidation also passivates the QD surface by reducing the amount of P dangling bonds, thereby increasing luminescence intensity. The dielectric properties of the thin films were also investigated by capacitance-voltage (C-V) measurements in a metal-insulator-semiconductor (MIS) device. At 60 and $300^{\circ}C$, negative flat band shifts (${\Delta}V_{fb}$) were observed, which were explained by the presence of P dangling bonds on the InP QD surface. At $300^{\circ}C$, clockwise hysteresis was observed due to trapping and detrapping of positive charges on the thin film, which was explained by proposing the existence of deep energy levels due to the indium-rich phases.

Fabrication and Characterization of Si Quantum Dots in a Superlattice by Si/C Co-Sputtering (실리콘과 탄소 동시 스퍼터링에 의한 실리콘 양자점 초격자 박막 제조 및 특성 분석)

  • Kim, Hyun-Jong;Moon, Ji-Hyun;Cho, Jun-Sik;Park, Sang-Hyun;Yoon, Kyung-Hoon;Song, Jin-Soo;O, Byung-Sung;Lee, Jeong-Chul
    • Korean Journal of Materials Research
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    • v.20 no.6
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    • pp.289-293
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    • 2010
  • Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.

Optical Properties of Oxotitanium (Ⅳ) Meso-tetrakis(4-sulfonatophenyl)porphyrin Intercalated into the Layered Double Hydroxides (LDH) Studied by Laser Spectroscopy

  • Ryu, Su-Young;Yoon, Min-Joong;Choy, Jin-Ho;Hwang, Sung-Ho;Frube, Akihiro;Asahi, Tsuyoshi;Hiroshi, Masuhara
    • Bulletin of the Korean Chemical Society
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    • v.24 no.4
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    • pp.446-452
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    • 2003
  • Some new nanohybrid materials have been synthesized by intercalating the oxotitanium(IV) meso-tetrakis(4- sulfonatophenyl) porphyrin$(O=Ti^{(IV)} TSPP)$ into the Zn/Al layered double hydroxides (LDHs), and their structures and photophysical properties have been investigated by various laser spectroscopic techniques. According to the XRD pattern of the synthesized nanohybrid materials, the macrocycle plane of $O=Ti^{(IV)}$ TSPP are grafted perpendicular to the LDH layers. The $O=Ti^{(IV)}$ TSPP-intercalated LDH exhibits band broadening of the absorption spectrum and a blue shift of Q-band as compared to that observed in solution. Resonance Raman spectral measurements demonstrate that the positively charged LDHs give rise to a slight decrease of the electronic density of the porphyrin ring accompanying a small change of the electronic distribution of the $O=Ti^{(IV)}$ TSPP. Consequently the LDH environment affects the energies of the two highest occupied molecular orbitals (HOMOs) of the $O=Ti^{(IV)}$) TSPP, $a_{1u}$ and $a_{2u}$, producing a mixed orbital character. Being consistent with these electronic structural changes of $O=Ti^{(IV)}$ TSPP in LDH, both the fluorescence spectral change and the fsdiffuse reflectance transient measurements imply that the photoexcitation of the $O=Ti^{(IV)}$ TSPP intercalated into LDH undergoes fast relaxation to the O=Ti(IV) $TSPP^+-LDH^- $charge transfer (CT) state within a few picoseconds, followed by a photoinduced electron transfer between the O=Ti(IV) TSPP and LDHs with a rate constant greater than %1×10^{10}S^{-1}$. No evidence is found for back electron transfer. In conclusion, the $O=Ti^{(IV)}$ TSPP intercalated LDH seems to be a possible candidate for an artificial reaction center for an efficient solar energy conversion system.

Sol-Gel Synthesis, Crystal Structure, Magnetic and Optical Properties in ZnCo2O3 Oxide

  • Das, Bidhu Bhusan;Barman, Bittesh
    • Journal of the Korean Chemical Society
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    • v.63 no.6
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    • pp.453-458
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    • 2019
  • Synthesis of ZnCo2O3 oxide is performed by sol-gel method via nitrate-citrate route. Powder X-ray diffraction (XRD) study shows monoclinic unit cell having lattice parameters: a = 5.721(1) Å, b = 8.073(2) Å, c = 5.670(1) Å, β = 93.221(8)°, space group P2/m and Z = 4. Average crystallite sizes determined by Scherrer equation are the range ~14-32 nm, whereas SEM micrographs show nano-micro meter size particles formed in ZnCo2O3. Endothermic peak at ~798 K in the Differential scanning calorimetric (DSC) trace without weight loss could be due to structural transformation and the endothermic peak ~1143 K with weight loss is due to reversible loss of O2 in air atmosphere. Energy Dispersive X-ray (EDX) analysis profile shows the presence of elements Zn, Co and O which indicates the purity of the sample. Magnetic measurements in the range of +12 kOe to -12 kOe at 10 K, 77 K, 120 K and at 300 K by PPMS-II Physical Property Measurement System (PPMS) shows hysteresis loops having very low values of the coercivity and retentivity which indicates the weakly ferromagnetic nature of the oxide. Observed X-band EPR isotropic lineshapes at 300 K and 77 K show positive g-shift at giso ~2.230 and giso ~2.217, respectively which is in agreement with the presence of paramagnetic site Co2+(3d7) in the oxide. DC conductivity value of 2.875 ×10-8 S/cm indicates very weakly semiconducting nature of ZnCo2O3 at 300 K. DRS absorption bands ~357 nm, ~572 nm, ~619 nm and ~654 nm are due to the d-d transitions 4T1g(4F)→2Eg(2G), 4T1g(4F)→4T1g(4P), 4T1g(4F)→4A2g(4F), 4T1g(4F)→4T2g(4F), respectively in octahedral ligand field around Co2+ ions. Direct band gap energy, Eg~ 1.5 eV in the oxide is obtained by extrapolating the linear part of the Tauc plot to the energy axis indicates fairly strong semiconducting nature of ZnCo2O3.

Inhibitor of Xanthine Oxidase from Onion Skin (양파 껍질에서 분리한 Xanthine Oxidase 저해물질)

  • Ra, Kyung-Soo;Chung, Soo-Hyun;Suh, Hyung-Joo;Son, Jong-Youn;Lee, Hyo-Ku
    • Korean Journal of Food Science and Technology
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    • v.30 no.3
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    • pp.697-701
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    • 1998
  • Two major flavonoid compounds having inhibition activity of xanthine oxidase from onion skin were separated, isolated and identified by ODS chromatography, Sephadex LH-20 chromatography, UV/visible absorption spectroscopy and FAB Mass. Spectral analyses indicated that $F_1$ was a flavonol having 3,5,7,3'-OH and 4'-glucoside (quercetin 4'-glucoside), and $F_2$ was a flavonol having 3(5),7,3',4'-OH (quercetin). FAB-Mass of fraction $F_1\;and\;F_2$ in positive-ion-mode produced a spectra containing main ions at m/z 465, corresponding to the $(M+H)^+$ ion of quercetin 4'-glucoside, and m/z 303, corresponding to the $(M+H)^+$ ion of quercetin. The inhibition mechanisms of $F_1\;and\;F_2$ were a mixture of the uncompetative and non-competative modes, with respect to xanthine as a substrate.

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Synthesis of Doped Polymethylphenylsilane Conductive Polymers and their Structure Characteristics (포리메틸페닐실란계 전도성 고분자의 합성과 구조 특성)

  • Yang, Hyun-Soo;Kang, Phil-Hyun;Kim, Jeong-Soo;Ryu, Hae-il;Kim, Young-Ho
    • Applied Chemistry for Engineering
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    • v.7 no.5
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    • pp.954-962
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    • 1996
  • Four kind of polysilanes which had side chains of methyl, phenyl, and mixed structures, were synthesized and modified by doping with iodine. The structural, thermal, and electric characteristics of obtained polymers were systematically observed with iodine, The structural, thermal, and electric characteristics of obtained polymers were systematically observed with FT-IR, UV/VIS, TGA/DTG, DSC, and measurement of electric conductivity. From FT-IR spectra, it was confirmed that the synthesized polysilanes had side chains of methyl, phenyl, and mixed structures. The thermal stabilities of the polymers were found to increase with phenyl substituents. The polysilanes with phenyl side groups showed ${\sigma}-{\sigma}*$ transition absorption at wavelengths longer than 350 nm. The bathochromic shift of polysilanes with phenyl substituents relates probably to the narrowed band gap caused by delocalization of ${\pi}$-electron. The polymers doped with iodine showed multi-step pyrolysis behavior and higher residue compared with that of the undoped polymers. The electric conductivities of the undoped and doped polysilanes were $10^{-5}S/cm$ and $10^{-4}S/cm$, respectively.

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Studies on the Electrochemical Behavior of Heavy Lanthanide Ions and the Synthesis, Characterization of Heavy Metal Chelate Complexes(II). Synthesis and Characterization of Eight Coordinate Tungsten(IV) and Cerium(IV) Chelate Complex (무거운 란탄이온의 전기화학적 거동 및 중금속이온의 킬레이트형 착물의 합성 및 특성에 관한 연구(제2보). 8배위 텅스텐(IV)과 세륨(IV)의 킬레이트형 착물의 합성 및 특성)

  • Kang, Sam Woo;Chang, Choo Wan;Suh, Moo Yul;Lee, Doo Youn;Choi, Won Jong
    • Analytical Science and Technology
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    • v.5 no.1
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    • pp.41-49
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    • 1992
  • An attempt was made to prepare two series of tetrakis eight-coordinate tungsten(IV) and cerium(IV) complexes containing the 5,7-dichloro-8-quinolinol(N:${\pi}$-acceptor atom, O:${\pi}$-donor atom) ligand. Tetrakis eight-coordinate tungsten(IV) complex of 2-mercaptopyrimidine(N:${\pi}$-acceptor atom, S:${\pi}$-donor atom) ligand have also been prepared. And the new series of mixed-ligand eight-coordinate tungsten(IV) complexes containing bidentate ligands 5,7-dichloro-8-quinolinol and 2-mercaptopyrimidine have been prepared, isolated by TLC and characterized. $W(dcq)_4$, $W(dcq)_3(mpd)_1$, $W(dcq)_2(mpd)_2$, $W(dcq)_1W(dcq)_3$ and $W(mpd)_4$ complexes of MLCT absorption band appeared to 710nm, 680nm, 625nm, 581nm, and 571nm(${\varepsilon}\;max={\sim}>{\times}10^4$) on low-energy respectively. The specific absorption wave length of $Ce(dcq)_4$ is appeared 520nm(${\varepsilon}\;max={\sim}>{\times}10^4$). The Chemical shift values by proton of coordinated position appeared to $W(dcq)_4$ [$H_2:8.9ppm$]; $W(dcq)_3(mpd)_1$ [$H_2:9.3$,$H_6:9.2ppm$]; $W(dcq)_2(mpd)_2$ [$H_2:9.7$,$H_6:8.95ppm$]; $W(dcq)_1(mpd)_3$ [$H_2:9.8$,$H_6:9.4ppm$]; $W(mpd)_4$ [$H_6:8.8ppm$]; $Ce(dcq)_4$ [$H_2:9.3ppm$] with $^1H$-NMR. The inertness of mixed-ligand eight coordinate tungsten(IV) complexes have been investigated by UV-Vis. spectroscopic method in dimethylsulfoxide at $90^{\circ}C$. The inertness of $W(dcq)_n(mpd)_{4-n}$ complexes showed the following order, $W(dcq)_3(mpd)_1;k_{obs.}=3.8{\times}10^{-6}$ > $W(mpd)_4;k_{obs.}=6.0{\times}10^{-6}$ > $W(dcq)_4;k_{obs.}=6.4{\times}10^{-6}$ > $W(dcq)_2(mpd)_2;k_{obs.}=7.0{\times}10^{-6}$ > $W(dcq)_1(mpd)_3;k_{obs.}=1.7{\times}10^{-5}$, which showed the inertness until 16days, 10days, 9days, 8days, and 4days. The $W(mpd)_4$ is very inert as $k_{obs.}=3.6{\times}10^{-6}$(16days) in xylene at $90^{\circ}C$ and $k_{obs.}=6.0{\times}10^{-6}$(10days) in DMSO at $90^{\circ}C$.

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