• Title/Summary/Keyword: Absorber layer

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Effects of NaF evaporation rate on the properties of $CuInSe_2$ thin-film solar cells

  • Park, Sun-Yong;Lee, Eun-U;Lee, Sang-Hwan;Park, Sang-Uk;Jeong, U-Jin;Kim, U-Nam;Jeon, Chan-Uk
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.36.2-36.2
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    • 2010
  • A small amount of Na incorporated in $CuInSe_2$ (CIS) absorption layer has become widely accepted as a requirement for efficient polycrystalline CIS solar cells. However, there is ongoing argument on the role of sodium incorporated in the absorber. In this paper, CIS absorption layers have been deposited using the three-stage co-evaporation process on Mo coated non-Alkali glass substrates. The NaF was evaporated during the second-stage with various fluxes. This paper is focusing on differences of micro-structure and composition ratio of the absorber realized with different Na contents and the variation of electrical properties of the cells with the corresponding absorbers. The analytical results of x-ray diffraction (XRD) patterns, field emission scanning electron microscope (FE-SEM), energy dispersive spectroscopy (EDS) and current-voltage characteristics will be discussed to investigate the effect of NaF flux on the CIS absorber formation and its cell performance.

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Electrical and Optical Properties with the Thickness of Cu(lnGa)$Se_2$ Absorber Layer (Cu(InGa)$Se_2$ 광흡수막의 두께에 따른 태양전지의 전기광학 특성)

  • Kim, S.K.;Lee, J.C.;Kang, K.H.;Yoon, K.H.;Park, I.J.;Song, J.;Han, S.O.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.108-111
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    • 2002
  • CIGS film has been fabricated on soda-lime glass, which is coated with Mo film. by multi-source evaporation process. The films has been prepared with thickness of 1.0 ${\mu}m$, 1.75${\mu}m$, 2.0${\mu}m$, 2.3${\mu}m$, and 3.0${\mu}m$. X-ray diffraction analysis with film thickness shows that CIGS films exhibit a strong (112) preferred orientation. Furthermore. CIGS films exhibited distinctly decreasing the full width of half-maximum and (112) preferred peak with film thickness. Also, The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the interplanar spacing were examined by X-ray diffraction. The preparation condition and the characteristics of the unit layers were as followings ; Mo back contact DC sputter, CIGS absorber layer : three-stage coevaporation, CdS buffer layer : chemical bath deposition, ZnO window layer : RF sputtering, $MgF_2$ antireflectance : E-gun evaporation

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Characteristics of the ZnTe solar cell by the co-sputtering methods (Co-sputtering법으로 제작한 ZnTe 태양전지의 특성)

  • 장유진;김성우;최혁환;이명교;권태하
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.2
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    • pp.440-448
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    • 2004
  • In this paper, to make a solar cell of II-Ⅵ ZnTe compound semiconductor, we studied for the property of the transparent electrode(AZO) and Buffer layer(ZnO), and for reducing the energyband gap of optical absorber layer which are most effective on its efficiency. The ZnTe thin film was used the optical absorber layer of solar cell. Zn and Te were deposited using the co-sputtering method. The thin film was sputtered RF power of Zn/50W and Te/30W, respectively and a substrate temperature of foot under Ar atmosphere of 10mTorr. The energy band gap of the thin film was 1.73ev Then the thin film was annealed at $400^{\circ}C$ for 10sec under a vacuum atmosphere. The energy band gap of 1.67eV was achieved and the film composition ratio of Zn and Te was 32% and 68%. At the best condition, the Solar Cell was manufactured and the efficiency of 6.85% (Voc: 0.69V, Jsc: 21.408㎃/$cm^2$, Fill factor (FF): 0.46) was achieved.

Fabrication of Flexible CIGS thin film solar cells using STS430 substrate (STS430 기판을 이용한 Flexible CIGS 박막 태양전지 제조)

  • Jung, Seung-Chul;Ahn, Se-Jin;Yun, Jae-Ho;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2008.05a
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    • pp.436-437
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    • 2008
  • Flexible CIGS thin film solar cell was fabricated using STS430 plate as a flexible substrate in this work. A diffusion barrier layer of $SiO_2$ thin film was deposited on STS430 substrate by PECVD followed by deposition of double layered Mo back contact. After depositing CIGS absorber layer by co-evaporation, CdS buffer layer by chemical bath deposition, ZnO window layer by RF sputtering and Al electrode by thermal evaporation, the solar cell fabrication processes were completed and its performance was evaluated. Corresponding solar cell showed an conversion efficiency of 8.35 % with $V_{OC}$ of 0.52 V, $J_{SC}$ of 26.06 mA/$cm^2$ and FF of 0.61.

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Multi-Layer 공정을 통한 CIGS 광흡수층의 결정화 메커니즘 연구

  • Kim, Sam-Su;Kim, Hye-Ran;Lee, Yu-Na;Kim, Yong-Bae;Lee, Jun-Hyeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.666-666
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    • 2013
  • CIGS solar cell에서 p-type semiconductor역할을 수행하는 Cu(In,Ga)Se로 이루어진 Absorber layer는 4 element multi binary compound로 stoichiometry 측면에서 다양한 형태가 나타나기 때문에 태양전지 효율을 향상시키기 위해 이에 대한 연구가 활발하다. 우리는 E-beam evaporation 방법으로 다양한 조건의 multi layer로 증착된 CIG layer 위에 일정 두께의 Se을 증착하면서 열처리 조건에 따른 Selenization 메커니즘에 대한 연구를 수행하였다. 결과분석을 위해(in-situ High Temperature) XRD, XPS, Micro Raman spectroscopy, FE-SEM, (Nano Indentor, Atomic Force Microscopy) 등을 이용하여 결정구조, 결정화도, Depth profile, Eg (band gap energy) 등을 알아보고 분석결과간의 상관관계를 고찰하였다.

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Non-vacuum processing of CIGS absorber layer using nanoparticle

  • Ham, Chang-Woo;Song, Ki-Bong;Suh, Jeong-Dae;Cho, Jung-Min
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.267-267
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    • 2009
  • Solar cells with CIGS absorber layers have proven their suitability for high efficiency and stable low cost solar cells. We prepared and characterized particle based CIGS thin film using a non-vacuum processing. CIGS powder were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$, Se powder in solvent. The nanoparticle precursors were mixed with binder material. The CIGS thin film deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Visible-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).

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Plasmon-enhanced Infrared Spectroscopy Based on Metasurface Absorber with Vertical Nanogap

  • Hwang, Inyong;Lee, Jongwon;Jung, Joo-Yun
    • Journal of Sensor Science and Technology
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    • v.27 no.5
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    • pp.275-279
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    • 2018
  • In this study, we introduce a sensing platform based on a plasmonic metasurface absorber (MA) with a vertical nanogap for the ultrasensitive detection of monolayer molecules. The vertical nanogap of the MA, where the extremely high near-field is uniformly distributed and exposed to the external environment, is formed by an under-cut structure between a metallic cross nanoantenna and the mirror layer. The accessible sensing area and the enhanced near-field of the MA further enhance the sensitivity of surface-enhanced infrared absorption for the target molecule of 1-octadecanethiol. To provide strong coupling between the molecular vibrations and plasmonic resonance, the design parameters of the MA with a vertical nanogap are numerically designed.

The Microwave Absorbing Characteristics of Ferrite-Iron-Rubber Composites. (Ferrite-Iron-Rubber 복합체의 전파흡수특성)

  • 신재영;오재희
    • Journal of the Korean Magnetics Society
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    • v.4 no.3
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    • pp.208-213
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    • 1994
  • Wide-band absorbency and small layer thickness are required in the high- performance microwave absorber. In order to reduce the thickness of the absorber, ferrite-iron-rubber composites were proposed and its properties were investigated. The increase in both real part of perrreability and permittivity of the composites were observed with addition of -Fe powder and this behavior results in the decrease of fm dm term. The matching thicknesses of ferrite-iron-ruber composites were relatively small(0.5~2.0 mm) in the frequency range of 3~17 GHz as comIBfed to than that of ferrite-rubbr composit.

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CIGS Thin Film Fabrication Using Spray Deposition Technique (스프레이 분무법을 이용한 CIGS 태양전지 박막의 합성)

  • Cho, Jung-Min;Bae, Eun-Jin;Suh, Jeong-Dae;Song, Ki-Bong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.250-250
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    • 2010
  • We have prepared CIGS thin film absorber layers with simple solution spray deposition technique and thin film were synthesized with different atomic ratio. CIGS thin films were synthesized using non-vacuum solution deposition method on pre-heated sodalime glass substrates and Mo-coated soadlime glass substrate. In precursor solution were Cu : In : Ga: S ratio 4 : 3 : 2 : 8 and the crystal type of sprayed thin film were CIGS chalcopyrite structures. This structure was identified as typical chalcopyrite tetragonal structure with XRD analysis. This result showed that CIGS solution deposition technique has potential for the one step synthesis and low cost fabrication process for CIS or CIGS thin film absorber layer.

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A Study on Electromagnetic Wave Absorbing Properties of Ni-Mn-Zn Spinel Ferrite-Rubber Composite (Ni-Mn-Zn Spinel Ferrite-Rubber Composite의 전파흡수특성에 관한 연구)

  • 박연준;김동일
    • Journal of the Korean Institute of Navigation
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    • v.23 no.1
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    • pp.15-22
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    • 1999
  • In this paper, ferrite-rubber composite has been studied in order to apply to RF-A-PF in a super wideband electromagnetic absorber in RF-A-PF type, which can be used for a general purpose anechoic chamber. $Ni_x - Mn_0.1 - Zn_{(1-x-0.1)}ㆍFe_2O_4$ ferrite powder has been fabricated, then, using this, 〔$Ni_x - Mn_0.1 - Zn_{(1-x-0.1)}ㆍFe_2O_4$〕-Rubber composite for RF-layer in the RF-A-PF type absorber has been fabricated and it's characteristics have been analyzed. As a result, it has been clearly shown that the 〔$Ni_x - Mn_0.1 - Zn_{(1-x-0.1)}ㆍFe_2O_4$〕-Rubber composite has excellent electromagnetic wave absorbing properties.

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