• 한국생산제조학회지
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• 제20권3호
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• pp.316-321
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• 2011

Recently, it has been studied machining of micro parts with increasing demands for ultra precision parts. However, many engineering problems have already begun in polishing of optical parts or lens. As a method to overcome such problems, a new technology for the polishing of the target surface is being studied by controlling abrasives using MR fluids which are sensitive to magnetic fields. Since the current MR polishing system uses a big electromagnet, and is difficult to polish micro parts or spherical lens. Therefore, in this study, a round endmill type MR polishing system was developed to polish a three-dimensional structure which has spherical or inclined plane. And then, series of experiments were performed to verify the polishing performance of the developed round endmill type MR polishing system.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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• pp.122-125
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• 2003

We investigated the effect of the abrasive and additive concentrations in Nano ceria slurry on the pad surface temperature under varying pressure through chemical mechanical polishing (CMP) test using blanket wafers. The pad surface temperature after CMP increased with the abrasive concentration and decreased with increase of the additive concentration in slurries for the constant down pressure. A possible mechanism is that the additive adsorbed on the film surface during polishing decreases the friction coefficient, hence the pad surface temperature gets lower with increase of the additive concentration. This difference of temperature was more remarkable for the higher concentration of abrasives. In addition, in-situ measurement of spindle motor was carried out during oxide and nitride polishing. The averaged motor current for oxide film was higher than that for nitride film, which means the higher friction coefficient.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.274-278
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• 2002

The purpose of this study was to characterize the reaction of Cu surface with Cu slurry and CMP performance as a function of additives in CMP slurry. The polish rate of Cu was dependent on the kind of organic acids added in slurry. It was considered that polish rate of Cu was dependent on the concentration of carboxylates and mean particle size. When the etchant and oxidant were added in slurry, the highest removal rate and lower etch rate were measured at neutral pH. The addition of etchant, oxidant and pH adjustor played key roles of CMP ability in slurry. As the pH increased, polish rate of Cu was increased by the enhanced the mechanical effects due to effective dispersion of slurry particles. Alumina abrasives was more desirable for 1st step slurry because of high removal rate of Cu and high selectivity ratio among TaN and Cu.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1727-1728
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by do-ionized water (DIW). And then, $ZrO_2$,$CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1731-1732
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• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.567-568
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• 2006

To investigate the recycle possibility of slurry for the oxide-chemical mechanical polishing (oxide-CMP) application, three kinds of retreated methods were introduced as follows: First, the effects on the addition of silica abrasives and the diluted silica slurry (DSS) on CMP performances were investigated. Second, the characteristics of mixed abrasive slurry (MAS) using non-annealed and annealed alumina ($Al_2O_3$) powder as an abrasive added within DSS were evaluated to achieve the improvement of removal rates (RRs) and within-wafer non-uniformity (WIWNU%). Third, the oxide-CMP wastewater was examined in order to evaluate the possible ways of reusing it. And then, we have discussed the CMP characteristics of silica slurry retreated by mixing of original slurry and used slurry (MOS).

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.166-169
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• 2005

The magnetic polishing is the useful method to finish using magnetic power of magnet. This method is one of precision polishing techniques and has an aim of the clean. technology using for the pure of gas and inside of the sanitary pipe for transportation. The magnetic abrasive polishing method is not so common for machine that it is not spreaded widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. In this paper. We could have investigated into the changes of the movement of magnetic abrasive grain. In reference to this result, we could have made the experiment which is set under the condition of the magnetic flux density, polishing velocity according to the form of magnetic brush.

• 한국정밀공학회지
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• 제21권7호
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• pp.22-29
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• 2004

As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• Korean Journal of Acupuncture
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• 제18권1호
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• pp.165-170
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• 2001

전북 진안지역에서 재배된 백하수오 2년생 생근을 공시재료로 이용하여 백하수오의 적정 기계박피 조건을 구명하고자 박피날은 돌기형 고무, 플라스틱 패드, 마름모형 철제날과 솔브러시를 공시하고 연마재로서 인조석, 모래, 잔자갈을 이용하여 박피시험을 수행한 결과를 요약하면 다음과 같다. 1. 손박피의 경우 철제칼을 이용하여 1kg을 박피하는 시간이 36분으로 가장 적게 걸렸고 기계박피는 통일 무게 처리에 2분이 소요되는 것으로 나타났으며 명도의 경우 손박피가 기계박피에 비해 다소 높게 나타나는 경향이었다. 2. 백하수오 기계박피시 박피날과 연마재 처리조건에서 수율은 마름모형 철제날에 모래을 처리한 조합에서 89.9%로 가장 낮게 나타났으며 박피율은 마름모형 철제날에 잔자갈을 처리 한 조합에서 71.3%로 가장 높게 나타났다. 3. 백하수오의 박피후 품질결정에 중요한 요소중의 하나인 명도의 경우 마름모형 철제날에 잔자갈을 연마재로 사용한 조합에서 61.90.으로 가장 높게 나타났다. 4. 백하수오 기계박피시 적정 회전속도를 구명하기 위한 조건에서는 박피 회전속도가 빨라 칠수록 수율은 낮은 경향을 나타냈으며 박피율의 경우 회전속도 30r.p.m.에서 66.8%로 가장 높게 나타났으며 명도 또한 57.16으로 나타나 백하수오 기계박피시 적정 회전속도는 30r.p.m.으로 처 리 하는 것이 타당하다고 분석 되었다.

• 공업화학
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• 제22권6호
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• pp.631-635
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• 2011

직접산화법으로 제조한 구형 실리카졸과 비구형 실리카졸의 입자크기와 형상에 따른 산화막의 기계화학적 연마율에 미치는 영향을 연구하였다. 구형 실리카졸은 금속 실리콘 분말로부터 직접산화법에 의해 10~100 nm까지 크기별로 제조하였다. 직접산화법으로 제조한 10 nm 크기의 실리카졸에 산, 알콜, 실란과 같은 응집유도제에 의한 첨가하여 입자간 응집을 유도한 시드 졸을 제조하고, 여기에 실리콘 분말과 알칼리 촉매를 투입하여 직접산화법으로 입자를 성장하여, 두 개 이상의 입자가 응집되어 있는 실리카 시드의 형상이 유지된 상태에서 성장한 응집 비구형 실리카졸을 제조하였다. 이를 산화막 CMP에 적용하여 구형 및 비구형 실리카졸의 입자형상 및 크기에 따른 연마율을 비교하였다. 구형 실리카의 경우, 입자크기가 증가할수록 연마율은 높아졌고, 비구형 실리카졸은 평균입경이 유사한 크기의 구형 실리카 보다 더욱 높은 연마율을 나타내었다.