• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2002.10a
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• pp.379-384
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• 2002

The effect of size and volume fraction of ceramic particles with sliding velocity on the wear properties were investigated for the metal matrix composites fabricated by pressureless infiltration process. The particulate metal matrix composites exhibited about 5.5 - 6 times of excellent wear resistance compared with AC8A alloy at high sliding velocity, and as increasing the particle size and decreasing the volume fraction the wear resistance was improved. The wear resistance of metal matrix composites and AC8A alloy exhibited different aspects. Wear loss of AC8A alloy increased with sliding velocity linearly. whereas metal matrix composites indicated more wear loss than AC8A alloy at slow velocity region, however a transition point of wear loss was found at middle velocity region which show the minimum wear loss, and wear loss at high velocity region exhibited nearly same value with slow velocity region. In terms of wear mechanism, the metal matrix composites exhibited the abrasive wear at slow to high sliding velocity generally, however AC8A alloy showed abrasive wear at low sliding velocity and adhesive and melt wear at high sliding velocity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.529-529
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• 2007

Ruthenium (Ru) is a white metal and belongs to platinum group which is very stable chemically and has a high work function. It has been widely studied to apply Ru as an electrode material in memory devices and a Cu diffusion barrier metal for Cu interconnection due to good electrical conductivity and adhesion property to Cu layer. To planarize deposited Ru layer, chemical mechanical planarization(CMP) was suggested. However, abrasive particle can induce particle contamination on the Ru layer surface during CMP process. In this study, zeta potentials of Ru and interaction force of alumina particles with Ru substrate were measured as a function of pH. The etch rate and oxidation behavior were measured as a function of chemical concentration of several organic acids and other acidic and alkaline chemicals. PRE (particle removal efficiency) was also evaluated in cleaning chemical.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.78-78
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• 2007

In semiconductor devices, Cu has been used for the formation of multilevel metal interconnects by the damascene technique. Also lower dielectric constant materials is needed for the below 65 nm technology node. However, the low-k materials has porous structure and they can be easily damaged by high down pressure during conventional CMP. Also, Cu surface are vulnerable to have surface scratches by abrasive particles in CMP slurry. In order to overcome these technical difficulties in CMP, electro-chemical mechanical planarization (ECMP) has been introduced. ECMP uses abrasive free electrolyte, soft pad and low down-force. Especially, electrolyte is an important process factor in ECMP. The purpose of this study was to characterize KOH and $KNO_3$ based electrolytes on electro-chemical mechanical. planarization. Also, the effect of additives such as an organic acid and oxidizer on ECMP behavior was investigated. The removal rate and static etch rate were measured to evaluate the effect of electro chemical reaction.

• Tribology and Lubricants
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• v.34 no.6
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• pp.209-216
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• 2018

Sapphire is a substrate material that is widely used in optical and electronic devices. However, the processing of sapphire into a substrate takes a long time owing to its high hardness and chemical inertness. In order to process the sapphire ingot into a substrate, ingot growth, multiwire sawing, lapping, and polishing are required. The lap grinding process using pellets is known as one of the ways to improve the efficiency of sapphire substrate processing. The lap grinding process ensures high processing efficiency while utilizing two-body abrasion, unlike the lapping process which utilizes three-body abrasion by particles. However, the lap grinding process has a high material removal rate (MRR), while its weakness is in obtaining the required surface roughness for the final polishing process. In this study, we examine the effects of free abrasives in lap grinding on the material removal characteristics of sapphire substrate. Before conducting the lap grinding experiments, it was confirmed that the addition of free abrasives changed the friction force through the pin-on-disk wear test. The MRR and roughness reduction rate are experimentally studied to verify the effects of free abrasive concentration on deionized water. The addition of free abrasives (colloidal silica) in the lap grinding process can improve surface roughness by three-body abrasion along with two-body abrasion by diamond grits.

• Design & Manufacturing
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• v.1 no.1
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• pp.7-11
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• 2007

The fabrication of precision optical components by deterministic CNC grinding is an area of great current interest. Replacement of the traditional, craftsman driven, optical fabrication process is essential to reduce costs and increase process flexibility and reliability. Moreover, CNC grinding is well suited to the fabrication of complex shapes such as aspheres, making it possible to design optical systems with fewer components and reduced weight. Current technology is capable of producing surfaces with less than 2 microns peak to valley error, 50 nm rms surface roughness, and less than 1 micron subsurface damage. Bound abrasive tools, in which the abrasive particles are fixed in a second (matrix) material, play an important part in achieving this performance. In this paper, the factors affecting the ultra-fine surface roughness and profile accuracy of machined surfaces of aspheric parts has been analyzed experimentally and theoretically and on ultra-precision aspheric grinding system and precise adjusting mechanism have been designed and manufactured. In the paper we report the results of experiments and modeling performed to examine the effects of machinability, occurring during grinding of optical surfaces, on the tool surface profile. Profiles of machined surface were measured by using SEM. In order to optimize grinding conditions of aspheric lens processing, we performed experiments by design of experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1049-1055
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• 2004

Chemical Mechanical Polishing (CMP) is referred to as a three body tribological system, because it includes two solids in relative motion and the CMP slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason not only for the friction force but also for material removal during polishing, the friction force generated during CMP process was investigated with the change of abrasive size and concentration of CMP slurry. The threshold point of average coefficient of friction (COF) with increase in abrasives concentration during interlayer dielectric (ILD) CMP was found experimentally and verified mathematically based on contact mechanics. The predictable models, Mode I (wafer is in contact with abrasives and pad) and Mode II (wafer is in contact with abrasives only), were proposed and used to explain the threshold point. The average COF value increased in the low abrasives concentration region which might be explained by Mode I. In contrast the average COF value decreased at high abrasives concentration which might be regarded to as Mode II. The threshold point observed seemed to be due to the transition from Mode I to Mode II. The tendency of threshold point with the variation of abrasive size was studied. The increase of particle radius could cause contact status to reach transition area faster. The correlation between COF and material removal rate was also investigated from the tribological and energetic point of view. Due to the energy loss by vibration of polishing equipment, COF value is not proportional to the material removal rate in this experiment.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.53-57
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• 2007

In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to $38.4\;^{\circ}C$ with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest $p{\times}V$ polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest $p{\times}V$ polishing condition and indicates that the polishing process was mechanical limited in the low $p{\times}V$ polishing region and became chemically and mechanically balanced with increasing polishing power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.546-546
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• 2008

Copper (Cu) Chemical mechanical polishing (CMP) has been an essential process for Cu wifing of DRAM and NAND flash memory beyond 45nm. Copper has been employed as ideal material for interconnect and metal line due to the low resistivity and high resistant to electro-migration. Damascene process is currently used in conjunction with CMP in the fabrication of multi-level copper interconnects for advanced logic and memory devices. Cu CMP involves removal of material by the combination of chemical and mechanical action. Chemicals in slurry aid in material removal by modifying the surface film while abrasion between the particles, pad, and the modified film facilitates mechanical removal. In our research, we emphasized on the role of chemical effect of slurry on Cu CMP, especially on the effect of amine functional group on removal rate selectivity between Cu and Tantalum-nitride (TaN) film. We investigated the two different kinds of complexing agent both with amine functional group. On the one hand, Polyacrylamide as a polymer affected the stability of abrasive, viscosity of slurry and the corrosion current of copper film especially at high concentration. At higher concentration, the aggregation of abrasive particles was suppressed by the steric effect of PAM, thus showed higher fraction of small particle distribution. It also showed a fluctuation behavior of the viscosity of slurry at high shear rate due to transformation of polymer chain. Also, because of forming thick passivation layer on the surface of Cu film, the diffusion of oxidant to the Cu surface was inhibited; therefore, the corrosion current with 0.7wt% PAM was smaller than that without PAM. the polishing rate of Cu film slightly increased up to 0.3wt%, then decreased with increasing of PAM concentration. On the contrary, the polishing rate of TaN film was strongly suppressed and saturated with increasing of PAM concentration at 0.3wt%. We also studied the electrostatic interaction between abrasive particle and Cu/TaN film with different PAM concentration. On the other hand, amino-methyl-propanol (AMP) as a single molecule does not affect the stability, rheological and corrosion behavior of the slurry as the polymer PAM. The polishing behavior of TaN film and selectivity with AMP appeared the similar trend to the slurry with PAM. The polishing behavior of Cu film with AMP, however, was quite different with that of PAM. We assume this difference was originated from different compactness of surface passivation layer on the Cu film under the same concentration due to the different molecular weight of PAM and AMP.

• Journal of Periodontal and Implant Science
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• v.24 no.1
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• pp.131-143
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• 1994

For maintenance of exposed implant in healthy state, it is necessary to treat the surface of implant fixture and provide the surface adjustable to surrounding tissues. Variable techniques have been introduced such as citric acid and air-abrasive system to treat the failed implant. Although when the rough surface of HA coated implant was exposed to oral environment, the surface treatment method with citric acid or air-abrasive system is effective for removal of bacterial endotoxin, it is unsuccessful to prevent plaque deposition due to difficulty in removal of rough surface of HA coated implant. Thus, in this study the method that removes bacterial endotoxin and makes smooch surface without alteration of surface characteristics was studied. HA coated disc manufactured by IMZ Co. Was treated with high speed diamond bur, low speed diamond bur, stone bur, rubber point, jetpolisher. And then its surface state was examined with profilometer and SEM to evaluate the surface smoothness, and its surface component was analyzed with EDX to evaluate wheter the surface characteristics were altered or not. As a result, following results were obtained. When the surface roughness of each implant disc was measured by profilometer, the group I showed a $R_{max}\;2.11{\mu}m$ and the group II, III, IV, V showed a $R_{max2}\;4.17{\mu}m$, $7.28{\mu}m$, $8.61{\mu}m$ and $39.44{\mu}m$ respectively. That is, surface smoothness was highest in the group I and it has been gradually decreased in the group II, III, IV and V. Under the SEM examination, the group I showed relatively smooth surface and the group II showed slightly rougher surface than the group I due to partially remaining HA particles while most HA particle was removed. The group III and IV showed rough topography due to HA particles that was not grinded, and HA coated surface in group V showed very irregular surface with deep groove and prominence. In cross-sectional view, the group I showed uniform surface, and the group III, IV showed rough surface due to remaining HA particles but the thickness of HA coating was remarkably reduced. The group II has similar pattern in group I, and the group V showed about $40{\mu}m$ thickness although it was not constant. By analysis of surface component with EDX, the group II in which the grinding was effective showed a small quantity of calcium and phosphorous and the group III, IV, in which the grinding was incomplete showed calcium and phosphorus peak. In all experimental group, no other than titanium, aluminum, calcium, phosphorus was observed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.34.2-34.2
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• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.