• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1998.04a
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• pp.124-130
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• 1998

A mathematical model describing gear pump flow degradation in the presense of abrasive particles is presented. The model considers the operating parameters as Sommerfeld number, so that contamination sensitivity test results could be conversed to field application to predict contamination service life. A method to estimate the volumetric efficiency and the contamination level of a pump is proposed by measuring the temperature differences in the fluid. Test results show the validity of the theoretical establishments.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.17.1-17.1
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• 2006

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.972-975
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• 2002

An understanding of tribological behavior in CMP(Chemical Mechanical Polishing) is one of the most important things to reveal the mechanism of material removal. In CMP, the contact type is thought to be semi-direct, elastohydrodynamic contact type from the Stribeck diagram, which is a combination of solid-solid direct contact and hydrodynamic lubrication with thin liquid film. This study is focused on the decay of friction force during CMP from two points of view, one of which is change of the real contact area and the other is the decrease of the elastic modulus of the pad caused by the increase of the temperature during CMP Experiments are implemented with elastic modulus measuring system and tool dynamometer. Results show that the decay of friction force during CMP results from the decrease of the real contact pressure working on an abrasive, which is induced by the decrease of elastic modulus of pad caused by the increase of temperature. And, the phenomenon is thought to be happen specially in the case that the weight concentration of abrasive in slurry is small enough.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.529-529
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• 2007

Ruthenium (Ru) is a white metal and belongs to platinum group which is very stable chemically and has a high work function. It has been widely studied to apply Ru as an electrode material in memory devices and a Cu diffusion barrier metal for Cu interconnection due to good electrical conductivity and adhesion property to Cu layer. To planarize deposited Ru layer, chemical mechanical planarization(CMP) was suggested. However, abrasive particle can induce particle contamination on the Ru layer surface during CMP process. In this study, zeta potentials of Ru and interaction force of alumina particles with Ru substrate were measured as a function of pH. The etch rate and oxidation behavior were measured as a function of chemical concentration of several organic acids and other acidic and alkaline chemicals. PRE (particle removal efficiency) was also evaluated in cleaning chemical.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.231-234
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• 2004

Chemical mechanical polishing(CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with the slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various coefficient of friction was attained and analyzed with the kind of pad, abrasive and the abrasive concentration. The lubrication regime is also classified with ${\eta}v/p(\eta,\;v\;and\;p;$ the viscosity, relative velocity and pressure). Especially, the co-relation not only between the friction force and the removal per unit distance but also between the coefficient of friction and within-wafer-nonuniformity was estimated.

• Tribology and Lubricants
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• v.34 no.6
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• pp.209-216
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• 2018

Sapphire is a substrate material that is widely used in optical and electronic devices. However, the processing of sapphire into a substrate takes a long time owing to its high hardness and chemical inertness. In order to process the sapphire ingot into a substrate, ingot growth, multiwire sawing, lapping, and polishing are required. The lap grinding process using pellets is known as one of the ways to improve the efficiency of sapphire substrate processing. The lap grinding process ensures high processing efficiency while utilizing two-body abrasion, unlike the lapping process which utilizes three-body abrasion by particles. However, the lap grinding process has a high material removal rate (MRR), while its weakness is in obtaining the required surface roughness for the final polishing process. In this study, we examine the effects of free abrasives in lap grinding on the material removal characteristics of sapphire substrate. Before conducting the lap grinding experiments, it was confirmed that the addition of free abrasives changed the friction force through the pin-on-disk wear test. The MRR and roughness reduction rate are experimentally studied to verify the effects of free abrasive concentration on deionized water. The addition of free abrasives (colloidal silica) in the lap grinding process can improve surface roughness by three-body abrasion along with two-body abrasion by diamond grits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.136-139
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• 2003

Copper has attractive properties as a multi-level interconnection material due to lower resistivity and higher electromigration resistance as compared with Alumina and its alloy with Copper(0.5%). Among a variety of agents in Copper CMP slurry, $H_2O_2$ has commonly been used as the oxidizer However. $H_2O_2$ is so unstable that it requires stabilization to use as oxidizer Hence, stabilization of $H_2O_2$ is a vital process to get better yield in practical CMP process. In this article the stability of Hydrogen Peroxide as oxidizer of Copper CMP slurry has been investigated. When alumina abrasive was used, $\gamma$-particle Alumina C had a better stability than $\alpha$-particle abrasive. As adding KOH as pH buffering agent, $H_2O_2$ stability in slurry decreased. Urea hydrogen peroxide was used as oxidizer, an enhanced stability was gotten. When $H_3PO_4$ as $H_2O_2$ stabilizer was added, the decrease of $H_2O_2$ concentration in slurry became slower. Even though adding $H_2O_2$ in slurry after bead milling lead to better stability than in advance of bead milling, it had a lower dispersibility.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.57-58
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• 2006

In MIM (metal insulator metal) capacitor, Ru (ruthenium) has been suggested as new bottom electrode due to its excellent electrical performance, a low leakage of current and compatibility to the high dielectric constant materials. In this case of Ru bottom electrode, CMP (chemical mechanical planarization) process was needed m order to planarize and isolate the bottom electrode. In this study, the effect of chemical A on polishing and etching behavior was investigated as functions of chemical A concentration, abrasive particle and pressure. Chemical A was used as oxidant and etchant. The thickness of passivation layer on the treated Ru surface increased with the increase of chemical A concentration. The etch rate and removal rate of Ru were increased by the addition of chemical A. The removal rate was highest m slurry of pH 9 with the addition of 0.1 M chemical A and 2 wt% alumina at 4 psi. The maximum removal rate is about 80 nm/min.

• Tribology and Lubricants
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• v.30 no.5
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• pp.291-294
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• 2014

Multiple additives can help improve the performance of generally used lubricants. These additives include MoS2, cadmium, chloride, indium, sulfide, and phosphide, which are harmful to both humans and the environment. Thus, researchers in this industry have been trying to reduce the use of these additives by finding alternatives. Nanodiamonds are one of these candidates. Nanodiamond particles are very hard, chemically stable, and highly heat-conductive. This research involved uniformly dispersing nanodiamond particles in marine engine oils via a matrix synthesis method at various concentrations (0, 0.1, 0.3, 0.5, and 1.0 wt). Friction and wear tests involved constant loads on ball-on-disk specimens, where the ball was AISI 51200 steel, the disk was AISI 1020 steel, and the sliding speed was 0.217 m/s. The lowest wear occurred at a suitable concentration of nanodiamonds (0.3 wt). However, excessive amounts of nanodiamonds caused them to act as abrasive debris because of their hardness, which increased the wear amount. The friction coefficient decreased as the nanodiamond concentration increased because their octagonal, almost spherical shape caused them to act as rolling contact elements between two surfaces.

• Tribology and Lubricants
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• v.34 no.6
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• pp.226-234
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• 2018

Copper chemical mechanical planarization (CMP) has become a key process in integrated circuit (IC) technology. The results of copper CMP depend not only on the mechanical abrasion, but also on the slurry chemistry. The slurry used for Cu CMP is known to have greater chemical reactivity than mechanical material removal. The Cu CMP slurry is composed of abrasive particles, an oxidizing agent, a complexing agent, and a corrosion inhibitor. Citric acid can be used as the complexing agent in Cu CMP slurries, and is widely used for post-CMP cleaning. Although many studies have investigated the effect of citric acid on Cu CMP, no studies have yet been conducted on the interfacial friction characteristics and step height reduction in CMP patterns. In this study, the effect of citric acid on the friction characteristics and step height reduction in a copper wafer with varying pattern densities during CMP are investigated. The prepared slurry consists of citric acid ($C_6H_8O_7$), hydrogen peroxide ($H_2O_2$), and colloidal silica. The friction force is found to depend on the concentration of citric acid in the copper CMP slurry. The step heights of the patterns decrease rapidly with decreasing citric acid concentration in the copper CMP slurry. The step height of the copper pattern decreases more slowly in high-density regions than in low-density regions.