• 제목/요약/키워드: Abnormal voltage

검색결과 192건 처리시간 0.025초

마이크로컨트롤러를 이용한 IT 기기용 마이너스 전압 생성의 안정화에 관한 연구 (A Study on the Stabilization of Generating Negative Voltage for IT Equipments using Microcontroller)

  • 이현창
    • 융합정보논문지
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    • 제11권6호
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    • pp.7-13
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    • 2021
  • 본 논문에서는 IT기기에 사용되는 마이너스 전압을 생성할 때 이를 기동하는 기능과 과부하를 감지해 이에 대처하는 기능을 마이크로컨트롤러를 이용해 제어하는 방법을 제시하였다. 이를 위해 기존의 마이너스 전압 생성회로가 가지는 제약점 및 과부하시 발생되는 문제점을 분석하고, 별도의 전류감지 회로 없이 과부하 상태를 검출해 제어하는 방법을 제시하였다. 제시한 방법의 효과를 확인하기 위해 실험회로를 구성하여 실험을 진행한 결과 기존의 마이너스 전압 생성회로에서는 과부하시 래치-업 상태로 돌입해 회로가 위험한 상태로 진입하는 것에 비해 제시한 회로는 이를 감지해 회로의 동작을 차단하고 이러한 이상상태를 사용자에게 알려 조치를 취할 수 있으며, 회로의 기동시점을 시스템 상태에 맞춰 결정하므로 기동시간이 타임스위치 방식에 비해 약 23%정도로 크게 단축되는 실험결과를 확인하였다.

소형 휴대기기용 DC-DC 변환기를 위한 전압 보호회로 설계 (Design of a Voltage Protection Circuit for DC-DC Converter of the Potable Device Application)

  • 박호종;허윤석;박용수;김남태;송한정
    • 전자공학회논문지 IE
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    • 제49권1호
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    • pp.18-23
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    • 2012
  • 본 논문에서 소형 휴대기기용 DC-DC 변환기를 위한 전압보호회로를 설계 하였다. 제안하는 전압보호회는 저전압 보호회로(UVLO)와 고전압 보호회로(OVP) 로 구성되며, 비교기와 바이어스 회로를 사용하여 구현하였다. XFAB $1{\mu}m$ CMOS 공정을 SPICE 모의실험을 통하여 특성 확인을 하였다. 모의실험 결과, 저전압 보호회로(UVLO)는 입력 전압이 4.8 V 이상이 되면 턴-온 되며, 4.2 V 이하가 되면 턴-오프가 되어 저전압의 입력전압이 인가될 때 회로의 오작동을 막을 수 있다. 고전압 보호회로(OVP)는 기준전압 3.8V 이상의 출력전압이 발생하였을 때 회로를 차단하여 소자의 파괴를 막아 안정성과 신뢰성을 높일 수 있다. 또 가상의 DC-DC 변환기 제어회로에 연결한 결과 전압의 이상에 따른 전압보호회로의 동작여부를 확인하였다. 본 논문에서 제안하는 전압보호회로는 DC-DC 변환기의 보호회로 셀로 유용하게 사용 될 것으로 사료된다.

77K 이하 극저온 상에서의 부분방전 특성 분석 (Analysis of Partial Discharge Characteristics at Cryogenic Temperature below 77K)

  • 이상화;김복렬;신우주;이방욱;구자윤
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2011년도 제42회 하계학술대회
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    • pp.1562-1563
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    • 2011
  • Partial discharge measurement is one of the effective diagnostic techniques to predict abnormal high voltage dielectric insulation conditions of the electric equipments. Recently partial discharge diagnostic techniques were also utilized to evaluate the cryogenic dielectric insulation of high temperature superconducting electric equipment in liquid nitrogen. Generally, liquid nitrogen at 77 K is used used as the cryogenic and dielectric media for many high temperature superconducting high voltage applications. When a quench in the superconductor occurs, bubbles are generated which can affect the dielectric properties of the liquid nitrogen. So in order to reduce the bubble formation, subcooled nitrogen was also employed for this purpose. In this work, investigation of partial discharge characteristics of subcooled liquid nitrogen were conducted in order to clarify the retardation of partial discharge initiation voltage according to the different subcooling temperature of liquid nitrogen. And also the relation of partial discharge phenomena and the activities of bubbles were analyzed. It was observed that PD inception voltages shows rather different characteristics according to the decrease of subcooling temperature and the activities of bubbles were strongly influenced by temperature of the subcooled liquid nitrogen.

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변전소내 지역정보를 이용하여 안정도 향상을 위한 실시간 OLTC 및 커패시터 협조제어 알고리즘 (On-line coordination control of OLTC and Switched Shunt for enhancement of stability using local data in substation)

  • 강상균
    • 한국산업정보학회논문지
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    • 제17권7호
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    • pp.119-125
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    • 2012
  • 본 논문은 변전소 내에서 취득된 데이터만을 이용하여 전계통 전압안정도를 확보하기 위한 실시간 변전소내 OLTC(On-Load Tap Changer)와 S.S(Switched Shunt)와의 협조제어 알고리즘을 제안하고자 한다. 전압레벨을 일정한 값으로 유지시키기 위해서 동작하는 OLTC의 제어를 잘못하게 된다면 오히려 계통의 안정도(전압안정도) 를 해치는 결과를 나타낼 수 있다. 이 논문에서는 단일 변전소에서 취득된 데이터만으로 전체 시스템의 상태를 판단할 수 있는 Z-index를 이용하였다. Z-index를 이용하여 시스템을 normal 상태와 abnormal 상태로 구분하였고, 각 상태에 따른 협조제어 알고리즘을 제안하였다. 알고리즘 검증을 위해서 Hypersim과 matlab simulink를 이용하였다.

금속 기판적용을 통한 ZnO 나노로드기반 나노제너레이터 제조 (Fabrication of ZnO Nanorod based Robust Nanogenerator Metal Substrate)

  • 백성호;박일규
    • 한국분말재료학회지
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    • 제22권5호
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    • pp.331-336
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    • 2015
  • We report on the succesful fabrication of ZnO nanorod (NR)-based robust piezoelectric nanogenerators (PNGs) by using Cu foil substrate. The ZnO NRs are successfully grown on the Cu foil substrate by using all solution based method, a two step hydrothermal synthesis. The ZnO NRs are grown along c-axis well with an average diameter of 75~80 nm and length of $1{\sim}1.5{\mu}m$. The ZnO NRs showed abnormal photoluminescence specrta which is attributed from surface plasmon resonance assistant enhancement at specific wavelength. The PNGs on the SUS substrates show typical piezoelectric output performance which showing a frequency dependent voltage enhancement and polarity dependent charging and discharging characteristics. The output voltage range is 0.79~2.28 V with variation of input strain frequency of 1.8~3.9 Hz. The PNG on Cu foil shows reliable output performance even at the operation over 200 times without showing degradation of output voltage. The current output from the PNG is $0.7{\mu}A/cm^2$ which is a typical out-put range from the ZnO NR-based PNGs. These performance enhancement is attributed from the high flexibility, high electrical conductivity and excellent heat dissipation properties of the Cu foil as a substrate.

Determination of Power-Quality Disturbances Using Teager Energy Operator and Kalman Filter Algorithms

  • Cho, Soo-Hwan;Kim, Jeong-Uk;Chung, Il-Yop;Han, Jong-Hoon
    • International Journal of Fuzzy Logic and Intelligent Systems
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    • 제12권1호
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    • pp.42-46
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    • 2012
  • With the development of industry, more large-scale non-linear loads are added to existing power systems and they cause the serious power quality (PQ) problems to the nearby sensitive installations more and more. To protect the important loads and mitigate the impact of PQ disturbances on them, various compensating devices are installed. One of the most important control skills used in the compensating equipment at the load side is how fast they can recognize or detect the discontinuous abnormal PQ events from the normal voltage signal. This paper deals with two estimation methods for the fast detection and tracking of general PQ disturbances: Teager Energy Operator (TEO), which is a non-linear operator and used for a short time energy calculation, and Kalman Filter (KF), which is one of the most universally used estimation techniques. And it is also shown how to apply the TEO and the KF to detect the PQ disturbances such as voltage sag, swell, interruption, harmonics and voltage fluctuation.

배선에서 전기화재 전조신호 검출을 위한 H/W 및 S/W 구축 (Development of H/W and S/W for Detecting Electrical Fire Precursor Signal on Electrical Wirings)

  • 김성철;김두현
    • 한국안전학회지
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    • 제24권3호
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    • pp.13-18
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    • 2009
  • This paper is purposed to develop DAQ H/W, S/W and DB which can be used in developing electrical fire alarm system or in analyzing electrical fire cause, by detecting and monitoring precursor signals which have high possibility leading to electrical fire on electrical distribution wires. In this paper, developed was DAQ H/W adopting the C8051FXXX CPU which can analyze the measurement signals of current and voltage in electrical distribution wires, other CPU was investigated in view of the best digital sampling rate on the basis of previous researches for electrical fire alarm system. Also, the S/W which can interface with DAQ H/W's communication protocol and can be applied for electrical fire causes analysis, are embodied by LabVIEW. The combined DAQ H/W and S/W could analyze efficiently normal as well as abnormal electrical signals such as RMS value, instantaneous value of current and voltage, frequency signals etc, on the electrical wires. Also, DB system was constructed for recording various analysis results for precursor signals including voltage and current signals. The results by simulator and experiment showed that the suggested scheme with DAQ H/W, S/W and DB in this paper has high usability.

Novel properties of erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors

  • Jang, Moon-Gyu;Kim, Yark-Yeon;Shin, Jae-Heon;Lee, Seong-Jae;Park, Kyoung-Wan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권2호
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    • pp.94-99
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    • 2004
  • silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

Analysis of the Abnormal Voltage-Current Behaviors on Localized Carriers of InGaN/GaN Multiple Quantum well from Electron Blocking Layer

  • Nam, Giwoong;Kim, Byunggu;Park, Youngbin;Kim, Soaram;Kim, Jin Soo;Son, Jeong-Sik;Leem, Jae-Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.219-219
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    • 2013
  • The effect of an electron blocking layer (EBL) on V-I curves in GaN/InGaN multiple quantum well is investigated. For the first time, we found that curves were intersected at 3.012 V and analyzed the reason for intersection. The forward voltage in LEDs with an p-AlGaN EBL is larger than without p-AlGaN EBL at low injection current because the Mg doping efficiency for p-GaN layer was higher than that of p-AlGaN layer. However, the forward voltage in LEDs with an p-AlGaN EBL is smaller than without p-AlGaN EBL at high injection current because the carriers overflow from the active layer when injection current increases in LEDs without p-AlGaN EBL and in case of LED with p-AlGaN EBL, the carriers are blocked by EBL.

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입력전원의 변화에 따른 X선 기기의 특성평가 (Characteristic of X-ray Equipment according to the Input Power Condition)

  • 김영표;김태곤;천민우;박용필
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2010년도 추계학술대회
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    • pp.773-775
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    • 2010
  • 의료용 X-선 고전압발생장치는 작동 시 높은 용량의 입력전원이 필요하며, 만약 전원환경이 적합하지 않을 경우 X-선 고전압발생장치를 사용하지 못하거나 불안정한 작동으로 인해 원활한 작동이 불가능해 진다. 전원환경에 따라 제품이 불안정 할 경우 환자 진료에 지장이 생길 수 있는 것을 감안하여 상용전원을 사용하지 않고 의료용 X-선 고전압발생장치를 작동 할 수 있는 전원장치를 배터리를 활용하도록 하였다. 전원회로를 설계한 후 시제품을 제작하여 본 논문에 제시된 방법에 따라 상용전원과 배터리 전원을 각각 비교하여 의료용 X-선 고전압발생장치가 입력전원방식에 따라 어떤 특성과 효율을 가지고 있는지 확인하였다.

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