• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.485-486
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• 2006

Top emission OLED 소자에 사용되는 ITO(Indium-Tin-Oxide)의 저항을 개선하여 보다 낮은 저항을 가지는 전극을 제작하기 위해 AZO(ZnO-Ag-ZnO)를 제작하였다. AZO박막은 기존의 ITO박막이 수십 $\Omega$을 나타내던 것과 비교하여 $8{\Omega}$으로 매우 낮은 저항을 나타내었다 투과율은 84%로 기존의 ITO박막과 유사한 성능을 나타내었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.326-326
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• 2008

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.3
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• pp.185-190
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• 2015

In this study, we fabricated the indium gallium zinc oxide (IGZO), zinc oxide (ZnO), aluminum zinc oxide (AZO). oxide and silver are deposited by magnetron sputtering and thermal evaporator, respectively transparency and energy bandgap were changed by the thickness of silver layer. To fabricate metal oxide metal (OMO) structure, IGZO sputtered on a corning 1,737 glass substrate was used as bottom oxide material and then silver was evaporated on the IGZO layer, finally IGZO was sputtered on the silver layer we get the final OMO structure. The radio-frequency power of the target was fixed at 30 W. The chamber pressure was set to $6.0{\times}10^{-3}$ Torr, and the gas ratio of Ar was fixed at 25 sccm. The silver thickness are varied from 3 to 15 nm. The OMO thin films was analyzed using XRD. XRD shows broad peak which clearly indicates amorphous phase. ZnO, AZO, OMO show the peak [002] direction at $34^{\circ}$. This indicate that ZnO, AZO OMO structure show the crystalline peak. Average transmittance of visible region was over 75%, while that of infrared region was under 20%. Energy band gap of OMO layer was increased with increasing thickness of Ag layer. As a result total transmittance was decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.58-59
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• 2006

Top emission OLED 소자에 사용되는 ITO(Indium-Tin-Oxide)의 저항을 개선하여 보다 낮은 저항을 가지는 전극을 제작하기 위해 AZO(ZnO-Ag-ZnO)를 제작하였다. AZO박막은 기존의 ITO 박막이 수십 $\Omega$을 나타내던 것과 비교하여 $8{\Omega}$으로 매우 낮은 저항을 나타내었다. 투과율은 84%로 기존의 ITO 박막과 유사한 성능을 나타내었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.338.2-338.2
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• 2016

Al doped ZnO (AZO) thin films were deposited on Si substrates with rod-shaped-surface by pulsed laser deposition method (PLD). Si-rods were prepared through chemical etching. To analyze the influence on the formation of the rod structure, samples with various chemical etching conditions such as AgNO3/HF ratio, etching time, and solution temperature were prepared. The morphology of Si-rod structures were examined by FE-SEM. Fig. 1 shows a typical structure of n-AZO/p-Si-rod juncions. The fabricated n-AZO/p-Si-rod devices exhibited p-n diode current-voltage characteristics. We compared the I-V characteristics of n-AZO/p-Si-rod devices with the samples without Si-rod structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.318-319
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• 2006

기존에 사용되고 있는 ITO(Indium-Tin-Oxide)의 저항보다 낮은 저항을 가지는 AZO(ZnO-Ag-ZnO) 전극을 Top emission 방식의 OLED(organic light emitting diode)에 적용하여 발광 소자를 제작하였다. AZO박막은 기존의 ITO박막이 수십 ${\Omega}$을 나타내던 것과 비교하여 $8{\Omega}$으로 매우 낮은 저항을 나타내었다. 투과율은 84%로 기존의 ITO박막과 유사한 성능을 나타내었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.387-387
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• 2011

ITO (Indium-Tin Oxide)는 전기전도도, 가시광선투과도가 높으며, 패터닝하기 쉬운 장점을 가지나 Indium의 자원 고갈에 의한 재료비 상승의 문제점을 가지고 있어, 이를 대체하기 위한 연구가 진행되고 있다. 본 연구에서는 ITO 대신 AZO (ZnO:Al)를 기판온도에 따라 마그네트론 DC 스퍼터를 이용하여 소다라임 글래스에 증착하여 투명전극의 전기, 광학적 특성을 분석하였다. 조건에 따라 증착된 AZO 투명전극위에 유기 태양전지 흡수층으로 Poly (3-hexylthiophene) (P3HT)와 (phenyl-C61-butyric acid methyl ester (PCBM)를 사용하였으며, Glass/AZO/P3HT:PCBM/PEDOT:PSS/Ag의 구조를 갖는 Inverted 유기 태양전지를 제작하여 ITO 투명전극에 제작된 유기태양전지와의 특성을 비교, 분석 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.10-10
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• 2009

Transparent BNO thin films were grown on Al-doped ZnO (AZO)/Ag/AZO/polyethersulfon (PES) (abbreviated as AAAP) transparent electrodes at a low temperature by the NCD technique. The BNO films grown on the crystallized AZO/Ag/AZO (AAA) electrodes exhibit an amorphous phase with a root mean square (rms) roughness of approximately 2 nm in the range of deposition temperature. The capacitors (Pt/BNO/AAAP) with BNO films grown at $100^{\circ}C$ show a dielectric constant of 24 and dissipation factor of 8% at 100 kHz, a leakage current density of about $8{\times}10^{-6}A/cm^2$ at an applied voltage of 1.0V. The optical transmittances of the BNO/AAAP exhibited above 80% at wavelength of 550nm at all of deposition temperature. The mechanical stability of the BNO/AAA as well as AAA electrode with the PES substrates through the bending was ensured for flexible electronic device applications. The transparent BNO capacitors grown on AAAP are powerful candidate for integration with the transparent solar cells.

• Advances in materials Research
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• v.1 no.4
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• pp.299-310
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• 2012

This article describes the synthesis of a novel N-substituted pyrrole monomer containing an azobenzene group. The 2-[N-ethyl-N-[4-[(4-nitrophenyl) azo]-phenyl] amino] ethyl-3-chloropropionate (RedII) compound was synthesized via reaction of 4-nitro-4'-[N-ethyl-N-(2-hydroxyethyl)-amino] azobenzene (RedI) and 3-chloropropionic acid. RedII was reacted with the potassium salt of pyrrole then 2-[N-ethyl-N-[4-[(nitro phenyl) azo] phenyl] amino] ethyl-N-pyrrolyl propionate (Py-RedII) was prepared. Chemical polymerization of Py-RedII and copolymerization of Py-RedII with pyrrole carried out using $FeCl_3$. Poly (2-[N-ethyl-N-[4-[(nitro phenyl) azo] phenyl] amino] ethyl-N-pyrrolyl propionate) (PPy-RedII) was characterized by UV, IR, $^1HNMR$, $^{13}CNMR$ spectroscopies. Electropolymerization of Py-RedII and electroco-polymerization of Py-RedII and pyrrole were studied using conventional three electrodes system, Ag/AgCl reference electrode, platinum counter electrode and GC disk working electrode. Scanning electron microscopy (SEM), thermogravimetry analysis (TGA) and differential scanning calorimetry (DSC) were used for thermal and rheological studies. The TGA curve of PPy-RedII demonstrated a high thermal stability up to 200°C and its DSC thermogram showed two endothermic peaks at 88 and $122^{\circ}C$. The glass transition temperature of the polymer was found to be above the room temperature. Electrical conductivities of PPy-RedII and it's copolymer with pyrrole (PPy-RedII-co-Py) were studied by the four-probe method and produced conductivities of $7.5{\times}10^{-4}$ and $6.5{\times}10^{-3}Scm^{-1}$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.357-357
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• 2012

박막트랜지스터의 전극으로 Au, Ag, Mo, ITO와 같은 물질들이 이미 많이 연구되어 왔으며, 투명 Source/Drain 전극을 활용한 물질로는 ITO에 초점이 맞춰져 왔다. 하지만 ITO의 높은 가격과 Indium의 인체 유해한 독성 때문에 ITO를 대체하는 물질에 대해 많은 연구가 진행되고 있다. 그 중 Al이 도핑된 ZnO (AZO) 는 가시광 영역에서 85% 이상의 높은 투과율과 높은 전도성, 낮은 비저항으로 다양한 광전소자의 전극과 윈도우 물질로 많은 응용 가능성을 보여주고 있다. 본 실험에서는 고 품질의 박막성장이 가능하고, 박막의 두께를 세밀하게 조절할 수 있는 Pulsed Laser Deposition (PLD) 을 이용하여 온도변화에 따라 AZO 박막을 성장시키고 구조적, 전기적, 광학적 특성을 조사하였다. 또한 온도변화가 AZO 박막 특성에 미치는 영향을 분석하여 Source/Drain 전극으로 사용하기 위한 조건을 최적화하였고, 실제 투명박막트랜지스터 제작을 통해 소자의 I-V Curve 와 Transfer 특성을 확인하고, Transfer Length Method 방법을 이용하여 투명박막트랜지스터의 접촉저항, 채널 비저항 등을 확인해 보았다. 소결된 타겟으로는 99.99%의 순도를 갖는 ZnO-$Al_2O_3$ (98:2 wt%) 타겟을 이용하였으며, 장비조건으로는 355 nm의 파장대역을 갖는 Nd:YAG 레이저를 사용하였고, 실험변수로는 온도범위 RT, $200^{\circ}C$, $400^{\circ}C$, $600^{\circ}C$에서 실험을 진행하였다. AZO 박막의 구조적, 전기적 특성을 분석하기 위해 각각 X-Ray Diffraction (XRD), Hall measurement 장비를 사용하였으며, 광학적 특성을 분석하기 위한 투과도의 측정은 UV-Visible spectrophotometer 장비를 사용하였다.