• 한국표면공학회지
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• 제18권1호
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• pp.5-11
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• 1985

Titanium was deposited onto AISI-430 stainless steel by chemical vapor deposition from $TiI_4\;and\;H_2$ gas mixture. Effects of temperature, flow rate of the gas, and $TiI_4$ partial pressure on the deposition rate were thoroughly investigated. The deposition rate of Ti was found to be constant at the given temperature and was increased with increasing temperature. The rate is controlled by surface reaction at the flow rate of gas higher than 500 ml/min, whereas at the flow rate lower than that by diffusional process. It is also interesting to note that the reaction mechanism changes at 1050$^{\circ}C$, at temperatures lower than 1050$^{\circ}C$ the activation energy is 56.9 Kcal/mol, whilst at temperatures higher than that is 8.3 Kcal/mol.

• 한국세라믹학회지
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• 제29권7호
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• pp.577-585
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• 1992

TiB2 and TiC were prepared from the mixture of metal titanium, boron and graphite powders in Argon atmosphere by Self-propagating High-temperature Synthesis method. The sintered properties of TiB2-TiC composite as a function of TiC content and sintering temperature were investigated in TiB2 matrix. The sintered properties were the most excellent at 10 wt% TiC content in TiB2-TiC composite. The relative density, M.O.R strength, hardness and fracture toughness of TiB2-10 wt% TiC composite sintered at 190$0^{\circ}C$ for 90 min by hot-pressing under the pressure of 30 MPa were 98.6%, 634 MPa, 2128.1 kg/$\textrm{mm}^2$ and 4.09 MN/m3/2, respectively.

• 한국세라믹학회지
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• 제35권4호
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• pp.325-332
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• 1998

Crystalline TiO2 ultrafine powders were prepared simply by heating and stirring aqueous TiOCl2 solution with {{{{ {Ti }^{4+ } }} concentration of 0.5 M from room temperature to 10$0^{\circ}C$ under 1 atmoshpere. The crystallinity and the particle shape of TiO2 ultrafine powders obtained by simple precipitation method were analyzed us-ing XRD(X-ray diffractometer). SEM(scanning electron microscopy) and TEM(transmission electron mi-croscopy) TiO2 crystalline precipitate with rutile phases is fully formed at the temperatures of up to $65^{\circ}C$ and then TiO2 crystalline precipitate with anatase phase starts to be formed above temperatures $65^{\circ}C$ showing its full formation at 10$0^{\circ}C$ These behaviors of TiO2 crystalline precipitate directly from an aqueous TiOCl2 solution would be caused due to the existence of {{{{ OMICRON ^2+ }} ions from distilled water which oxydize TiOCl2 to TiO2 not hydrolyzing it to Ti(OH)4 Here thermodynamically stable TiO2 rutile phase generally formed at higher temperature is practically precipitated at lower temperatures in this study This may be due to the precipitation by very slow reaction enough to make TiO2 particles allocated into stable rutile structure.

• 한국재료학회지
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• 제22권8호
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• pp.409-415
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• 2012

$TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2002년도 추계학술강연 및 발표대회
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• pp.8-8
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• 2002

TiC core/(Ti,Mo)C rim structure in TiC-$Mo_2C$-Ni base cermet which is generally prepared by sintering below 145$0^{\circ}C$ had been believed to be generated by the solid diffusion of Mo atoms 1 into TiC grains (D. Moskowitz and M.Humenik, 1r.:1966). Afterward, it was clarified that the c core/rim structure is generated by solution/re-precipitation mechanism : (1) $Mo_2C$ grains and s small TiC grains dissolve into the Ni liquid, (2) the dissolved Mo, Ti and C atoms migrate to the s surface of TiC coarse grains, (3) the Mo, Ti and C precipitate on the surface of TiC coarse g grains and form (Ti,Mo)C solid solution rim, and (4) the Ostwald ripening (grain growth by s solution/re-precipitation mechanism) of TiC-core/(Ti,Mo)-rim grains continues, and thus the w width of (Ti,Mo)C rim (at the same time, the grain size) increases with sintering time, etc. ( (H.Suzuki, K.Hayashi and O.Terada: 1973). The TiC-core was found not to disappear even by s sintering at 190$0^{\circ}C$ (ibid.: 1974) Recently, FeSi core/$Fe_2Si_5$-rim structure in Fe-66.7at%Si thermoelectric aIloy was found to also h hardly shrink and disappear by long heating at an appropriate temperature (1999: M.Tajima and K K.hayashD. Then, the authors considered its cause, and clarified experimentaIly that the disappearance of FeSi-core/$Fe_2Ski_5$-rim structure could be attributed to the exhaustion of diffusion-contributable vacancies in core/rim structure (N.Taniguchi and K.Hayashi:2001). At p present, the authors and my coworker are investigating whether the non-disappearance of TiC c core can be explained also from the new hypothesis "Exhaustion of diffusion-contributable v vacancies in corelrim structure".ure".uot;.

• 한국재료학회지
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• 제19권7호
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• pp.397-402
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• 2009

In this study, Ti powder was fabricated from Ti scrap by the Hydrogenation-Dehydrogenation (HDH) method. Hydrogenation reactions of Ti scrap occurred at near 450 $^{\circ}C$ with a sudden increase in the reaction temperature and the decreasing pressure of hydrogen gas during the hydrogenation process in the furnace. The dehydrogenation process was also carried out at 750 $^{\circ}C$ for 2hrs in a vacuum of $10^{-4}$ torr. After the HDH process, a deoxidation treatment was carried out with the Ca(purity: 99.5) at 700 $^{\circ}C$ for 2hrs in the vacuum system. It was found that the oxidation content of Ti powder that was deoxidized with Ca showed noticeably lower values, compared to the content obtained by HDH process. In order to fabricate Ti compacts, Ti powder was sintered at $1100\sim1400^{\circ}C$ for 2hrs under a vacuum of $10^{-4}$ torr. The relative density of compact was 94.9% at 1300 $^{\circ}C$. After sintering, all of the Ti compacts showed brittle fracture behavior, which occurred in an elastic range with short plastic yielding up to a peak stress.

• 한국세라믹학회지
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• 제30권3호
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• pp.222-228
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• 1993

In order to obtian TiO2 fine powder of high purity, the new method which is different from the sulfate process and the chloride one was employed. TiO2 was syntehsized by the reaction between elemental titanium particles and H2O2 solutiosn at 30~7$0^{\circ}C$, and then TiO2 powder was characterized using XRD, SEM, TEM, DTA and FT-IR. It was found that the initial reaction rate was fast at a high temperature due to the high generation of activated oxygen associated with thedecomposition of H2O2. However, the reaction was slowly proceeded at a low temperature due to slow decomposition of H2O2. In this experimental range, the optimum temeprature was ocnsidered to be about 5$0^{\circ}C$. The primary particles of the hydrous titanium dioxide (TiO2 gel) before aging were spherical, and their mean sizes were about 50nm. The similar shapes and sizes were observed with calcinatin at 40$0^{\circ}C$. The FT-IR spectrum of Ti-OH in the TiO2 gel powder appeared at around 3380cm-1, 1630cm-1 and 530cm-1. This gel powder was crystallized into the anatase type TiO2 at 300~40$0^{\circ}C$.

• The Korean Journal of Ceramics
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• 제5권2호
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• pp.155-161
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• 1999

The tribological behaviour of monolithic SiC as well as SiC-TiC and SiC-TiC-$TiB_2$ particulate composite materials has been investigated in unlubricated oscillating sliding tests against $Al_2O_3$ at temperature in the range from room temperature up to $600^{\circ}C$. At temperatures below $600^{\circ}C$ the wear rate of the systems with the composite materials was up to 20 times lower than the wear of the $Al_2O_3$/SiC system and was dominated by the oxidation of the titanium phases. At $600^{\circ}C$ the oxidation rate of the TiC and -TEX>$TiB_2$ grains becomes predominant resulting in an enhanced wear rate of the composite rate of the TiC and TiB2 grains becomes predominant resulting in an enhanced wear rate of the composite materials. The coefficient of friction shows similar values for all materials of investigation, increasing from 0.25…0.3 at room temperature to 0.7…0.8 $600^{\circ}C$. The wear of the $Al_2O_3$/SiC system is mainly abrasive at temperatures above room temperature and is characterised by an enhanced wear of the alumina ball at $600^{\circ}C$.

• 한국세라믹학회지
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• 제40권1호
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• pp.87-92
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• 2003

출발 물질로 TiCx(x=0.67)와 Al 분말을 사용하여 800~150$0^{\circ}C$ 온도 구간에서 상압 또는 가압 반응으로 Ti$_3$AlC$_2$를 합성하였다. 출발 물질로 TiCx(x=0.67)와 Al 분말을 사용한 반응 합성에서는 Ti-Al intermetallic compound 또는 Al-C compound와 같은 중간 형성물은 형성되지 않았으며 Ti$_3$AlC$_2$을 합성할 수 있었다. TiCx(x=0.67)와 용융 Al의 직접 반응으로 80$0^{\circ}C$에서는 Ti$_2$AlC 상이 합성되었으며, 1200~150$0^{\circ}C$ 반응온도 구간에서는 Ti$_3$AlC$_2$ 상이 우선적으로 합성되었다. 저온에서 합성된 Ti$_2$AlC 상은 고온에서 TiC와 반응으로 Ti$_3$AlC$_2$ 상으로 합성되었다. 본 연구에서는 출발 물질로 TiCx와 Al을 사용한 Ti$_3$AlC$_2$ 상의 합성기구를 제시하였다. 합성된 Ti$_3$AlC$_2$의 미세구조는 Ti$_3$AlC$_2$ 상으로 이루어진 결정립이 45~120nm크기로 적층된 구조를 갖는다.

• 한국결정성장학회지
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• 제9권5호
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• pp.510-515
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• 1999

일정농도의 $TiO_2$ 수용액과 일정농도의 KOH 수용액을 반응시켜 $TiO_2$의 가수분해에 의한 Titanium Oxide의 생성 및 생성물의 열처리 조건에 따른 거동을 연구하였다. 열처리 조건은 300~1000$1000^{\circ}C$에서 각각 1시간으로 하였고 각 조건에서 얻어진 생성물의 분석은 XRD, DTA 및 FT-IR에 의하여 연구 검토되었으며 그 결과 다음과 같은 결론을 얻을 수 있었다. \circled1 $90^{\circ}C$의 온도조건에서 초기 가수분해 반응 생성물은 Anatase형 TiO2의 주 peak가 회절각도의 폭이 넓고 강도가 약하게 나타나 준결정질 물질임을 나타내고 있다. \circled2 결정질이 좋지 못한 준정질 산화티탄은 $300^{\circ}C$까지는 Anatase 결정성이 온도와 더불어 좋아지며 $700^{\circ}C$에서 rutile형 TiO2로 상전이 한다. \circled3 alkali pH 영역에서 생성된 K-O-Ti 결합을 형성한 비 결정성 물질은 potasium titanate계의 물질로써 결정화 온도는 630~$640^{\circ}C$ 부근이다. \circled4 비 결정성 K-O-Ti 결합이 공존하는 준결정성 산화티탄은 K-O-Ti 결합물질의 함량이 증가됨에 따라 Anatase로의 결정화 온도가 $300^{\circ}C$에서 50$0^{\circ}C$로 높아지며 또한 rutile형 $TiO_2$로의 상이전도 $700^{\circ}C$에서 $900^{\circ}C$로 높아진다. \circled5 $TiO_4$와 KOH를 사용한 습식법에 의한 Anatase형 $TiO_2$합성조건은 pH 3~pH 5가 가장 바람직하며 열처리 온도는 $300^{\circ}C$에서 가능하다.