• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.78-88
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• 1994

The electrical properties of TiM/TiSi$_{2}$ bilayer formed by rapid thermal anneal in NH$_{3}$ ambient after the Ti film is deposited on silicon cubstrate are investigated. N$^{+}$ contact resistance slightly increases with increasing annealing temperature with P$^{+}$ contact resistance decreases. The contact resistance of N$^{+}$ contance was less than 24[.OMEGA.] but P$^{+}$ thatn that of N$^{+}$ contact but the leakage current indicates degradation of the contact at high annealing temperature for both N$^{+}$ and contacts. The leakage current of N$^{+}$ Junction was less than 0.06[fA/${\mu}m^{2}$] but P$^{+}$ contact was 0.11-0.15[fA/${\mu}m^{2}$]. The junction breakdown voltage for N$^{+}$ junction remains contant with increasing annealing temperature while P$^{+}$ junction slightly decreases. The Electrical properties of a two step annealing are better than that of one step annealing. The Tin/TiSi$_{2}$ bilayer formed by RTA in NH$_{3}$ ambient reveals good electrical properties to be applicable at ULSI contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.236-237
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• 2005

The structural properties of $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films with post-annealing temperature were investigated. $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films were deposited by RF sputtering method on Pt/Ti/$SiO_2$/Si substrates with optimum deposition condition. The $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films was post-annealed at 600$^{\circ}C$, 650$^{\circ}C$, 700$^{\circ}C$, 750$^{\circ}C$, 800$^{\circ}C$ in furnace,respectively. Increasing the post-annealing temperature, the grain size, density and peak intensity of (117) and c-axis orientation were increased. The $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films that annealed at 750$^{\circ}C$ exhibited well crystallized phase and had no vacancy and grain was uniform. but there are some secondary phases observed. At this time, the average thickness of $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films was 2000 ${\AA}$.

• Journal of the Korean institute of surface engineering
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• v.38 no.6
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• pp.227-233
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• 2005

Electrochemical characteristics of welded stainless steels containing Ti have been studied by using the electrochemical techniques in 0.5 M $H_2SO_4$+0.01 M KSCN solutions at $25^{\circ}C$. Stainless steels with 12 mm thick-ness containing $0.2{\~}0.9 wt\%$ Ti were fabricated with vacuum melting and following rolling process. The stainless steels were solutionized for 1hr at $1050^{\circ}C$ and welded by MIG method. Samples were individually prepared with welded zone, heat affected zone, and matrix for intergranular corrosion and pitting test. Optical microscope, XRD and SEM are used for analysing microstructure, surface and corrosion morphology of the stainless steels. The welded zone of the stainless steel with lower Ti content have shown dendrite structure mixed with $\gamma$ and $\delta$ phase. The Cr-carbides were precipitated at twin and grain boundary in heat affected zone of the steel and also the matrix had the typical solutionized structure. The result of electrochemical measurements showed that the corrosion potential of welded stainless steel were Increased with higher Ti content. On the other hand, reactivation($I_r$), passivation and active current($I_a$) density were decreased with higher Ti content. In the case of lower Ti content, the corrosion attack of welded stainless steel was remarkably occurred along intergranular boundary and ${\gamma}/{\delta}$ phase boundary in heat affected zone.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.1
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• pp.1-7
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• 2016

Titanium and its alloys can be usually joined with brazing method. And the alloys should be brazed at low temperature to keep their original microstructure. In this study, the mechanical strength and microstructure of the CP-Ti joint-brazed with $Zr_{54}Ti_{22}Ni_{16}Cu_8$ filler metal having melting temperature of $774{\sim}783^{\circ}C$ were investigated. The tensile strengths of the joint-brazed at $800^{\circ}C$ with $100^{\circ}C/min$ of cooling rate showed more than 400 MPa which was as high as base metal. The $Widmanst{\ddot{a}}tten$ structure consisting of Ti and $Ti_2Ni$ phase was observed in the joint area. However, the tensile strengths of the joint-brazed at $800^{\circ}C$ with $15^{\circ}C/min$ of cooling rate were decreased and the Ti, $(Ti,Zr)_2Ni$ and $Ti_2Ni$ phases were observed at the joint area. It is believed that the $(Ti,Zr)_2Ni$ laves phases could decrease the mechanical strength of the joint and the cooling rate should be controled to get high strength of the titanium joint.

• Transactions of Materials Processing
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• v.14 no.8 s.80
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• pp.681-688
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• 2005

The high-temperature deformation mechanisms of a ${\alpha}+{\beta}$ titanium alloy (Ti-6Al-4V), near-a titanium alloy (Ti-6.85Al-1.6V) and a single-phase a titanium alloy (Ti-7.0Al-1.5V) were deduced within the framework of inelastic-deformation theory. For this purpose, load relaxation tests were conducted on three alloys at temperatures ranging from 750 to $950^{\circ}C$. The stress-versus-strain rate curves of both alloys were well fitted with inelastic-deformation equations based on grain matrix deformation and grain-boundary sliding. The constitutive analysis revealed that the grain-boundary sliding resistance is higher in the near-${\alpha}$ alloy than in the two-phase ${\alpha}+{\beta}$ alloy due to the difficulties in relaxing stress concentrations at the triple-junction region in the near-${\alpha}$ alloy. In addition, the internal-strength parameter (${\sigma}^*$) of the near-${\alpha}$ alloy was much higher than that of the ${\alpha}+{\beta}$ alloy, thus implying that dislocation emission/ slip transfer at ${\alpha}/{\alpha}$ boundaries is more difficult than at ${\alpha}/{\beta}$ boundaries.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.359-364
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• 1996

$SrTiO_3$ thin films were deposited on Pt/Ti/$SiO_2$/Si substrates at low temperatures below $300^{\circ}C$ by r.f. magnetron sputtering. The materials and the electrical properties of the deposited films were investigated with controlling deposition parameters such as substrate temperature(T_s) and positive substrate d.c. bias voltage. Stoichiometric $SrTiO_3$ films were obtained at Ts of $300^{\circ}C$, but Sr content in the film was less than that of a target when Ts was lower than $300^{\circ}C$, resulting in poor electrical properties. By introducing a positive substrate d.c. bias during deposition, the crystallinity and the dielectric properties of the films were markedly improved. 400 nm thick $SrTiO_3$, films deposited at $300^{\circ}C$ with a positive substrate d.c. bias of 20V showed a columnar structure with <211> crystallographic direction and a dielectric constant of 98.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.1
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• pp.31-36
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• 2011

$TiO_2$ films were deposited on a glass substrate with RF magnetron sputtering and then surface of $TiO_2$ films were electron beam irradiated in a vacuum condition to investigate the effect of electron bombardment on the thin film crystallization, surface roughness and gas sensitivity for hydrogen. $TiO_2$ films that electron beam irradiated at 450eV were amorphous phase, while the films irradiated at 900 eV show the anatase (101) diffraction peak in XRD pattern. AFM measurements show that the roughness is depend on the electron irradiation energy. As increase the hydrogen gas concentration and operation temperature, the gas sensitivity of $TiO_2$ and $TiO_2$/ZnO films is increased proportionally and $TiO_2$ films that electron beam irradiated at 900 eV show the higher sensitivity than the films were irradiated at 450eV. From the XRD pattern and AFM observation, it is supposed that the crystallization and rough surface promote the hydrogen gas sensitivity of $TiO_2$ films.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.1
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• pp.60-68
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• 2011

[ $ZrO_2-TiO_2$ ]binary oxides with various Zr:Ti molar ratios were prepared by sol-gel method and Nafion$^{(R)}$/$ZrO_2-TiO_2$ composite membranes were fabricated for proton exchange membrane fuel cells (PEMFCs) at high temperature and low humidity. Water uptake, Ion exchange capacity (IEC), and proton conductivity of Nafion$^{(R)}$/$ZrO_2-TiO_2$ composite membranes were characterized and these composite membranes were tested in a single cell at $120^{\circ}C$ with various relative humidity (R.H.) conditions. The obtained results were compared with the unmodified membranes (Nafion$^{(R)}$ 112 and Recast Nafion$^{(R)}$). A Nafion$^{(R)}$/$ZrO_2-TiO_2$ composite membrane with 1:3 of Zr:Ti molar ratio showed the highest performance. The performance showed 500 mW/$cm^2$ (0.499V) at $120^{\circ}C$, 50% R. H., and 2 atm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.437-442
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• 2018

This work reports the preparation of Al-Ti based oxide thin films and their optical properties. Although the transmittance of a $TiO_2/Al2O_3$ bilayer structure was as high as 90% at wavelengths of 600 nm or larger, the reflectance of the bilayer reached its minimum at wavelengths of around 360 nm. The transmittance of an 89-nm-thick $TiO_2$ thin film rapidly increased and then decreased at a critical wavelength because of destructive interference. The wavelength corresponding to the reflectance minimum increased after an increase in $TiO_2$ film thickness. The smooth surface morphology of the AlTiO thin film was retained up to a film thickness of 65 nm, and the transmittance of the film was inversely proportional to film thickness, in accordance with the general tendency for optical films. The reflectance of the AlTiO film at visible light wavelengths was lower than that of the $TiO_2$ film, which implies that the AlTiO film is suitable for applications as an optical thin film layer in semitransparent solar cells.

• Journal of the Korean institute of surface engineering
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• v.45 no.3
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• pp.106-110
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• 2012

Oblique angle deposition (OAD) is a physical vapor deposition where incident vapor flux arrives at non-normal angles. It has been known that tilting the substrate changes the properties of the film, which is thought to be a result of morphological change of the film. In this study, OAD has been applied to prepare single and multilayer TiN films by cathodic arc deposition. TiN films have been deposited on cold-rolled steel sheets and stainless steel sheet. The deposition angle as well as substrate temperature and substrate bias was changed to investigate their effects on the properties of TiN films. TiN films were analyzed by color difference meter, scanning electron microscopy, nanoindenter and x-ray diffraction. The color of TiN films was not much changed according to the deposition conditions. The slanted and zigzag structures were observed from the single and multilayer films. The relation between substrate tilting angle (${\alpha}$) and the growth column angle (${\beta}$) followed the equation of $tan{\alpha}=2tan{\beta}$. The indentation hardness of TiN films deposited by OAD was low compared with the ones prepared at normal angle. However, it has been found that $H^3/E^2$ ratio of 3-layer TiN films prepared at OAD condition was a little higher than the ones prepared at normal angle, which can confirm the robustness of prepared films.