• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.63-67
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• 2001

Up to now, most studies about Pt-etching have been focused on physical sputtering mechanism with Cl-based plasma, while only a limited results are available for etching characteristics with fluorine-based plasma. In this study, etch characteristics of Pt thin film with $Cl_2$/Ar and $SF_{6}$/Ar Ar gas chemistries have been studied with ECR plasma etching system. It is confirmed that $SF_{6}$/Ar Ar plasma chemistry could make volatile etch-products through the reaction with Pt thin film. Also the improvement in etch rate, etch profile and surface roughness is obtained due to the formation of volatile platinum fluoride compounds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05e
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• pp.96-99
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• 2003

In this dissertation the results of the combined experimental and theoretical studies designed to understand and predict the spatial growth and transport coefficients for electrons in $SF_6$ and $SF_6$-Ar mixtures have described. The transport coefficients for electrons in (0.1[%])$SF_6$-Ar, (0.5[%])$SF_6$-Ar, (1.0[%])$SF_6$-Ar, (3.0[%])$SF_6$-Ar and (5.0[%])$SF_6$-Ar mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2202-2204
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• 2005

In this dissertation the results of the combined experimental and theoretical studies designed to understand and predict the spatial growth and transport coefficients for electrons in $SF_6$ and $SF_6-Ar$ mixtures have described. The transport coefficients for electrons in (0.1[%]) $SF_6-Ar$, (0.5[%])$SF_6-Ar$,(1.0[%])$SF_6-Ar$,(3.0[%])$SF_6-Ar$ and(5.0[%]) $SF_6-Ar$ mixtures were measured by time-of- flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1494-1495
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• 2007

In this dissertation the results of the combined experimental and theoretical studies designed to understand and predict the spatial growth and transport coefficients for electrons in $SF_6$ and $SF_6$-Ar mixtures have described. The transport coefficients for electrons in (0.1[%])$SF_6$-Ar, (0.5[%])$SF_6$-Ar, (1.0[%])$SF_6$-Ar, (3.0[%])$SF_6$-Ar and (5.0[%])$SF_6$-Ar mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.05a
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• pp.281-284
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• 2004

Mean energy of electrons in $SF_6-Ar$ Mixtures Gas used by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300[Td]$ by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6-Ar$, 0.1[%] and 5.0[%], $SF_6-Ar$ mixtures were measured by time-of-flight(TOF) method. The transport Coefficients for electrons in (100[%])$SF_6$. (100[%])Ar, (0.2[%])$SF_6-Ar$ and (0.5[%]) $SF_6-Ar$, (5.0[%]) $SF_6-Ar$, (0.1[%])$SF_6-Ar$ mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• The Journal of the Petrological Society of Korea
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• v.10 no.3
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• pp.172-178
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• 2001

K-Ar dating system of Korea Basic Science Institute (KBSI) was installed in 1997 and has been used since then. The system consists of high temperature graphite furnace, gas purification system, and mass spectrometer with data acquisition system. K-Ar age is determined by the measurement of the concentrations of Ar and K through isotope dilution method using $^{38}Ar$ as spike and flame spectroscopy, respectively. The accuracy and reliability for the K-Ar age are checked using the several K-Ar standard materials. Although the exact age determination for young samples of less than 1 Ma is hampered by small fluctuations of sensitivity and mass discrimination, the present system yields the reliable K-Ar age compared to the standard materials of Tertiary and Mesozoic age. The measurements for the SORI93 biotite with the recommended K-Ar age of $92.6\pm$0.6 Ma and Bern4M muscovite of $18.5\pm$0.6 Ma yield the reliable age of $92.1\pm$1.1 Ma and $17.8\pm$0.2 Ma, respectively.

• Korean Chemical Engineering Research
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• v.51 no.6
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• pp.755-759
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• 2013

The etch rate and etch profile of Si was investigated when Ar was added to an $SF_6$ plasma in the etch step of the Bosch process. A Si substrate was etched with the Bosch process using $SF_6$ and $SF_6$/Ar plasmas, respectively, in the etch step to analyze the effects of Ar addition on the etch characteristics of Si. When the Ar flow rate in the $SF_6$ plasma was increased, the etch rate of the Si substrate increased, had a maximum at 20% of the Ar flow rate, and then decreased. This was because the addition of Ar to the $SF_6$ plasma in the etch step of the Bosch process resulted in the bombardment of Ar ions on the Si substrate. This enhanced the chemical reactions (thus etch rates) between F radicals and Si as well as led to sputtering of Si particles. Consequently, the etch rate was higher more than 10% and the etch profile was more anisotropic when the Si substrate was etched with the Bosch process using a $SF_6$/Ar (20% of Ar flow rate) plasma during the etch step. This work revealed a feasibility to improve the etch rate and anisotropic etch profile of Si performed with the Bosch process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.230-234
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• 2011

High density plasma etching of ZnO film was performed in $CF_4$/Ar and $SF_6$/Ar inductively coupled plasmas. Maximum etch rates of ~1950 ${\AA}$/min and ~1400 ${\AA}$/min were obtained for $10CF_4$/5Ar and $10SF_6$/5Ar ICP discharges, respectively. The etched ZnO surfaces showed better RMS roughness values than the unetched control sample under most of the conditions examined. In the $10CF_4$/5Ar ICP discharges, very high etch selectivities were obtained for ZnO over Ni (max. 11) while Al showed etch selectivities in the range of 1.6~4.7 to ZnO.

• Journal of the Korean Chemical Society
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• v.51 no.6
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• pp.499-505
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• 2007

Monomeric complexes of nickel(II) having terdentate bis(imino)aryl ligands (N,C,N-pincer) are reported. New complexes (2,6-(ArN=CH)2C6H3)NiBr (Ar=2,6-dimethylphenyl (1), 2,6-diisopropylphenyl (2)) have been synthesized through oxidative addition of 1,3-(ArN=CH)2C6H3Br (bis(N-Ar)-2-bromoisophthalaldimine: Ar=Ph-2,6-Me2, Ph-2,6-iPr2) to Ni(COD)2 (COD=1,5-cyclooctadiene), in high yields. The development of a synthetic route to ligands and nickel complexes is outlined. The complexes were characterized by IR, 1H-NMR and elemental analysis. Full characterization of complexes 1 and 2 is discussed. An investigation into the catalytic activity of the complexes in ethylene polymerization was performed, resulting in no formation of polyethylenes but producing a small amount of oily oligomers. Preliminary results indicate that the pincer complexes were found to be inactive as catalysts in ethylene polymerization.

• Archives of Pharmacal Research
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• v.15 no.3
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• pp.256-262
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• 1992

For the evaluation of the role of substituents of ar-turmerone for its anticancer activity, ar-turmerone (1a) and its analogs like 2-methyl-6-(4'-methyphenyl)-2-octen-4-one (1b), 2-methyl-6-phenyl-2-hepten-4-one (1c), 2-methyl-6-phenyl-2-octen-4-one (1d) and 2 methyl-6-(trans-4'-methylcyclohexyl)-2-hepten-4-one (1e) were preparedd and their cytotoxic activities against $L_{1210}$ cell were determined. Omission of methyl group at para-position dose not variate the cytotoxicity of ar-turmerone. Elongation of alkyl group at 6-position decreases $ED_{50}$ value. Saturation of aromatic ring of ar-turmerone markedly decreases the cytotoxicity. Therefore the smaller size of alkyl group at 6-position and aromatic ring of ar-turmerone should be essential for exhibiting its anticancer activity.